NE21935 [ASI]
NPN SILICON HI FREQUNCY TRANSISTOR; NPN硅HI FREQUNCY晶体管
| 型号： | NE21935 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON HI FREQUNCY TRANSISTOR |
| 文件： | 总1页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NE21935
NPN SILICON HI FREQUNCY TRANSISTOR
DESCRIPTION:
The ASI NE21935 is Designed for
general purpose and small signal
amplifier and oscillator applications up
to 6.0 GHz.
PACKAGE STYLE .100 4L PILL
FEATURES INCLUDE:
• High frequency 8.0 GH
• Low noise, 1 dB at 0.5 GHz.
MAXIMUM RATINGS:
80 mA
20 V
IC
VCBO
VCEO
VEBO
PDISS
TJ
10 V
1.5 V
580 mW @ TA = 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
80 °C/W
TSTG
θJC
1 = BASE
3 = COLLECTOR
2& 4 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
ICBO
V
V
V
CB = 8.0 V
EB = 1.0 V
CE = 8.0 V
1.0
1.0
300
µA
µA
---
IEBO
hFE
IC = 20 mA
30
100
0.4
CCB
fT
V
CB = 8.0 V
CE = 8.0 V
f = 1.0 MHz
1.0
pF
V
IC = 20 mA
IC = 20 mA
8.0
15.5
9.0
GHz
VCE = 8.0 V
f = 1.0 GHz
f = 2.0 GHz
|S21E
|
dB
8.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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