VFT150-28 [ASI]

VHF POWER MOSFET Channel Enhancement Mode; 甚高频功率MOSFET的沟道增强模式


型号：	VFT150-28
厂家：	ADVANCED SEMICONDUCTOR
描述：	VHF POWER MOSFET Channel Enhancement Mode 甚高频功率MOSFET的沟道增强模式
文件：	总1页 (文件大小：22K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

VFT150-28

VHF POWER MOSFET

N-Channel Enhancement Mode

DESCRIPTION:

The VFT150-28 is Designed for General

Purpose Class B Power Amplifier

Applications up to 175 MHz.

PACKAGE STYLE .500 4L FLG

.112x45°

Ø.125 NOM.

FULL R

FEATURES:

· P_G= 10 dB Typical at 175 MHz

· 10:1 Load VSWR Capability

· Omnigold™ Metalization System

MAXIMUM RATINGS

MINIMUM

MAXIMUM

inches / mm

DIM

inches

I_D

16 A

65 V

.220 / 5.59

.230 / 5.84

.125 / 3.18

V_DSS

V_GS

P_DISS

T_J

.245 / 6.22

.255 / 6.48

.720 / 18.28

.7.30 / 18.54

±40 V

.970 / 24.64

.495 / 12.57

.003 / 0.08

.090 / 2.29

.150 / 3.81

.980 / 24.89

.505 / 12.83

.007 / 0.18

.110 / 2.79

.175 / 4.45

.280 / 7.11

1.050 / 26.67

300 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

0.6 ^OC/W

T_STG

q_JC

.980 / 24.89

ORDER CODE: ASI 10700

CHARACTERISTICS T_C= 25 ^OC

NONE

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

BV_DSS

I_D= 100 mA

V_DS= 28 V

V_DS= 0 V

I_D= 100 mA

I_D= 5 A

I_DSS

I_GSS

V_GS(th)

g_fs

V_GS= 0 V

5.0

1.0

5.0

m A

V_GS= 20 V

V_DS= 10 V

1.0

3500

C_iss

C_oss

C_rss

375

190

V_DS= 28 V

V_DD= 28 V

V_GS= 0 V

f = 1.0 MHz

P_G

h _D

I_DQ= 250 mA

P_out= 150 W

f = 175 MHz

8.5

V_SWR= 10:1 AT ALL PHASE ANGLES

NO DEGRADATION IN OUTPUT POWER

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

Specifications are subject to change without notice.

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