VMB150-28 [ASI]

NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管


型号：	VMB150-28
厂家：	ADVANCED SEMICONDUCTOR
描述：	NPN SILICON RF POWER TRANSISTOR NPN硅射频功率晶体管晶体晶体管射频
文件：	总1页 (文件大小：21K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

VMB150-28

NPN SILICON RF POWER TRANSISTOR

PACKAGE STYLE .500 6L FLG

DESCRIPTION:

The ASI VMB150-28 is Designed for

2x ØN

FULL R

FEATURES:

.725/18,42

· Omnigold™ Metalization System

MINIMUM

inches mm

MAXIMUM

inches mm

DIM

MAXIMUM RATINGS

.150 / 3.43

.160 / 4.06

.045 / 1.14

10 A

60 V

I_C

.210 / 5.33

.835 / 21.21

.200 / 5.08

.490 / 12.45

.003 / 0.08

.220 / 5.59

.865 / 21.97

.210 / 5.33

.510 / 12.95

.007 / 0.18

V_CB

V_CE

P_DISS

T_J

35 V

.125 / 3.18

.725 / 18.42

140 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

0.65 ^OC/W

.970 / 24.64

.090 / 2.29

.150 / 3.81

.980 / 24.89

.105 / 2.67

.170 / 4.32

.285 / 7.24

.135 / 3.43

.120 / 3.05

T_STG

q_JC

ORDER CODE: ASI10750

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_E= 10 mA

V_E= 28 V

BV_CER

BV_EBO

I_CES

R_BE= 10 W

4.0

---

h_FE

V_CE= 5.0 V

I_C= 1.0 A

100

C_ob

V_CB= 28 V

V_CC= 28 V

f = 1.0 MHz

f = 88 MHz

335

P_G

P_OUT= 150 W

h_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

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Specifications are subject to change without notice.