AT24C128U2-10UU-1.8SL383 [ATMEL]

EEPROM, 16KX8, Serial, CMOS, PBGA8, DBGA-8;
AT24C128U2-10UU-1.8SL383
型号: AT24C128U2-10UU-1.8SL383
厂家: ATMEL    ATMEL
描述:

EEPROM, 16KX8, Serial, CMOS, PBGA8, DBGA-8

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总23页 (文件大小:397K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Features  
Low-voltage and Standard-voltage Operation  
– 2.7 (VCC = 2.7V to 5.5V)  
– 1.8 (VCC = 1.8V to 3.6V)  
Internally Organized 16,384 x 8 and 32,768 x 8  
Two-wire Serial Interface  
Schmitt Trigger, Filtered Inputs for Noise Suppression  
Bidirectional Data Transfer Protocol  
1 MHz (5V), 400 kHz (2.7V, 2.5V) and 100 kHz (1.8V) Compatibility  
Write Protect Pin for Hardware and Software Data Protection  
64-byte Page Write Mode (Partial Page Writes Allowed)  
Self-timed Write Cycle (5 ms Max)  
Two-wire Serial  
EEPROMs  
High Reliability  
– Endurance: One Million Write Cycles  
– Data Retention: 40 Years  
Extended Temperature and Lead-free/Halogen-free  
Devices Available  
8-lead JEDEC PDIP, 8-lead JEDEC and EIAJ SOIC, 8-lead MAP, 8-lead TSSOP, 8-lead  
SAP and 8-ball dBGA2 Packages  
128K (16,384 x 8)  
256K (32,768 x 8)  
Die Sales: Wafer Form, Waffle Pack, and Bumped Wafers  
Description  
AT24C128  
The AT24C128/256 provides 131,072/262,144 bits of serial electrically erasable and  
programmable read only memory (EEPROM) organized as 16,384/32,768 words of 8  
bits each. The device’s cascadable feature allows up to 4 devices to share a common  
Two-wire bus. The device is optimized for use in many industrial and commercial appli-  
cations where low power and low voltage operation are essential. The devices are  
available in space-saving 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ  
SOIC, 8-lead MAP (24C128), 8-lead TSSOP, 8-lead SOIC Array Package and 8-ball  
dBGA2 packages. In addition, the entire family is available in 2.7V (2.7V to 5.5V) and  
1.8V (1.8V to 3.6V) versions.  
AT24C256(1)  
Note:  
1. Not recommended for  
new design; please  
refer to AT24C256B  
datasheet.  
8-lead TSSOP  
8-lead PDIP  
Table 1. Pin Configuration  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
Pin Name  
A0 - A1  
SDA  
Function  
Address Inputs  
Serial Data  
Serial Clock Input  
Write Protect  
No Connect  
Ground  
NC  
SCL  
SDA  
NC  
SCL  
SDA  
GND  
GND  
SCL  
8-lead SOIC  
8-lead MAP  
WP  
VCC  
8
7
6
5
1
2
3
4
A0  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
NC  
WP  
SCL  
SDA  
A1  
WP  
NC  
GND  
NC  
SCL  
SDA  
GND  
GND  
Bottom View  
8-lead SAP  
8-ball dBGA2  
8
7
6
5
1
2
3
4
A0  
VCC  
WP  
VCC  
WP  
8
7
6
5
1
2
3
4
A0  
A1  
A1  
NC  
GND  
SCL  
SDA  
SCL  
SDA  
NC  
GND  
Bottom View  
Bottom View  
0670S–SEEPR–5/06  
Absolute Maximum Ratings*  
*NOTICE:  
Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent dam-  
age to the device. This is a stress rating only and  
functional operation of the device at these or any  
other conditions beyond those indicated in the  
operational sections of this specification is not  
implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device  
reliability.  
Operating Temperature..................................–55°C to +125°C  
Storage Temperature.....................................–65°C to +150°C  
Voltage on Any Pin  
with Respect to Ground....................................1.0V to +7.0V  
Maximum Operating Voltage .......................................... 6.25V  
DC Output Current........................................................ 5.0 mA  
Figure 1. Block Diagram  
2
AT24C128/256  
0670S–SEEPR–5/06  
AT24C128/256  
Pin Description  
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each  
EEPROM device and negative edge clock data out of each device.  
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open-  
drain driven and may be wire-ORed with any number of other open-drain or open collector  
devices.  
DEVICE/ADDRESSES (A1, A0): The A1 and A0 pins are device address inputs that are hard-  
wired or left not connected for hardware compatibility with other AT24CXX devices. When the  
pins are hardwired, as many as four 128K/256K devices may be addressed on a single bus  
system (device addressing is discussed in detail under the Device Addressing section). If the  
pins are left floating, the A1 and A0 pins will be internally pulled down to GND if the capacitive  
coupling to the circuit board VCC plane is <3 pF. If coupling is >3 pF, Atmel recommends con-  
necting the address pins to GND.  
WRITE PROTECT (WP): The write protect input, when connected to GND, allows normal write  
operations. When WP is connected high to VCC, all write operations to the memory are inhib-  
ited. If the pin is left floating, the WP pin will be internally pulled down to GND if the capacitive  
coupling to the circuit board VCC plane is <3 pF. If coupling is >3 pF, Atmel recommends con-  
necting the pin to GND.  
Memory  
Organization  
AT24C128/256, 128K/256K SERIAL EEPROM: The 128K/256K is internally organized as  
256/512 pages of 64-bytes each. Random word addressing requires a 14/15-bit data word  
address.  
3
0670S–SEEPR–5/06  
Table 2. Pin Capacitance(1)  
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V.  
Symbol  
CI/O  
Test Condition  
Max  
8
Units  
pF  
Conditions  
VI/O = 0V  
VIN = 0V  
Input/Output Capacitance (SDA)  
Input Capacitance (A0, A1, SCL)  
CIN  
6
pF  
Note:  
1. This parameter is characterized and is not 100% tested.  
Table 3. DC Characteristics(1)  
Applicable over recommended operating range from: TAI = 40°C to +85°C, VCC = +1.8V to +5.5V; TAE= 40°C to +125°C(2),  
CC = +2.7V to +5.5V(unless otherwise noted).  
V
Symbol  
Parameter  
Test Condition  
Min  
1.8  
2.5  
4.5  
Typ  
Max  
3.6  
5.5  
5.5  
2.0  
3.0  
0.2  
2.0  
0.5  
6.0  
Units  
V
VCC1  
VCC2  
VCC3  
ICC1  
Supply Voltage  
Supply Voltage  
Supply Voltage  
Supply Current  
Supply Current  
V
V
VCC = 5.0V  
VCC = 5.0V  
VCC = 1.8V  
READ at 400 kHz  
WRITE at 400 kHz  
1.0  
2.0  
mA  
mA  
µA  
ICC2  
Standby Current  
(1.8V option)  
ISB1  
VIN = VCC or VSS  
VIN = VCC or VSS  
VCC = 3.6V  
VCC = 2.5V  
VCC = 5.5V  
µA  
Standby Current  
(2.5V option)  
ISB2  
Standby Current  
(5.0V option)  
ISB3  
ILI  
VCC = 4.5 - 5.5V VIN = VCC or VSS  
VIN = VCC or VSS  
6.0  
3.0  
3.0  
µA  
µA  
µA  
Input Leakage Current  
0.10  
0.05  
Output Leakage  
Current  
ILO  
VOUT = VCC or VSS  
VIL  
Input Low Level(1)  
Input High Level(1)  
Output Low Level  
Output Low Level  
–0.6  
VCC x 0.3  
VCC + 0.5  
0.4  
V
V
V
V
VIH  
VCC x 0.7  
VOL2  
VOL1  
VCC = 3.0V  
VCC = 1.8V  
IOL = 2.1 mA  
IOL = 0.15 mA  
0.2  
Notes: 1. VIL min and VIH max are reference only and are not tested.  
2. The AT24C128/256 bearing the process letter “B” on the package (the mark is located in the lower right corner on the top-  
side of the package) are approved for operation in the extended temperature range.  
4
AT24C128/256  
0670S–SEEPR–5/06  
AT24C128/256  
Table 4. AC Characteristics – Industrial Temperatures  
Applicable over recommended operating range from TAI = 40°C to +85°C, VCC = +1.8V to +5.5V, CL = 100 pF (unless oth-  
erwise noted). Test conditions are listed in Note 2.  
1.8-volt  
Max  
2.5-volt  
Max  
5.0-volt  
Max  
Symbol  
fSCL  
Parameter  
Min  
Min  
Min  
Units  
kHz  
µs  
Clock Frequency, SCL  
Clock Pulse Width Low  
Clock Pulse Width High  
Clock Low to Data Out Valid  
100  
400  
1000  
tLOW  
4.7  
4.0  
0.1  
1.3  
0.6  
0.4  
0.4  
tHIGH  
tAA  
µs  
4.5  
0.05  
0.9  
0.05  
0.55  
µs  
Time the bus must be free before a  
new transmission can start(1)  
tBUF  
4.7  
1.3  
0.5  
µs  
tHD.STA  
tSU.STA  
tHD.DAT  
tSU.DAT  
tR  
Start Hold Time  
4.0  
4.7  
0
0.6  
0.6  
0
0.25  
0.25  
0
µs  
µs  
µs  
ns  
µs  
ns  
µs  
ns  
ms  
Start Set-up Time  
Data In Hold Time  
Data In Set-up Time  
Inputs Rise Time(1)  
Inputs Fall Time(1)  
Stop Set-up Time  
Data Out Hold Time  
Write Cycle Time  
200  
100  
100  
1.0  
0.3  
0.3  
tF  
300  
300  
100  
tSU.STO  
tDH  
4.7  
0.6  
50  
0.25  
50  
100  
tWR  
20 or 5(3)  
10 or 5(3)  
10 or 5(3)  
Write  
Cycles  
Endurance(1)  
25°C, Page Mode  
100k or 1,000,000(4)  
Notes: 1. This parameter is characterized and is not 100% tested.  
2. AC measurement conditions:  
RL (connects to VCC): 1.3 k(2.5V, 5V), 10 k(1.8V)  
Input pulse voltages: 0.3 VCC to 0.7 VCC  
Input rise and fall times: 50 ns  
Input and output timing reference voltages: 0.5 VCC  
3. The Write Cycle Time of 5 ms only applies to the AT24C128/256 devices bearing the process letter “B” on the package (the  
mark is located in the lower right corner on the top side of the package).  
4. The AT24C128/256 bearing the process letter “B” in the package (the mark is located in the lower right corner on the top  
side of the package), guarantees 1 million write cycle endurance (1.8 – 3.6V).  
5
0670S–SEEPR–5/06  
Table 5. AC Characteristics(5) – Extended Temperatures  
Applicable over recommended operating range from TAE = 40°C to +125°C, VCC = +2.7V to +5.5V, CL = 100 pF (unless  
otherwise noted). Test conditions are listed in Note 2.  
2.7-volt  
Max  
5.0-volt  
Max  
Symbol  
fSCL  
Parameter  
Min  
Min  
Units  
kHz  
µs  
Clock Frequency, SCL  
Clock Pulse Width Low  
Clock Pulse Width High  
Clock Low to Data Out Valid  
400  
1000  
tLOW  
1.3  
0.6  
0.4  
0.4  
tHIGH  
tAA  
µs  
0.05  
0.9  
0.05  
0.55  
µs  
Time the bus must be free before a new  
transmission can start(1)  
tBUF  
1.3  
0.5  
µs  
tHD.STA  
tSU.STA  
tHD.DAT  
tSU.DAT  
tR  
Start Hold Time  
0.6  
0.6  
0
0.25  
0.25  
0
µs  
µs  
µs  
ns  
µs  
ns  
µs  
ns  
ms  
Start Set-up Time  
Data In Hold Time  
Data In Set-up Time  
Inputs Rise Time(1)  
Inputs Fall Time(1)  
Stop Set-up Time  
Data Out Hold Time  
Write Cycle Time  
100  
100  
0.3  
0.3  
tF  
300  
100  
tSU.STO  
tDH  
0.6  
50  
0.25  
50  
tWR  
10 or 5(3)  
10 or 5(3)  
Write  
Cycles  
Endurance(1)  
25°C, Page Mode  
100k or 1,000,000(4)  
Notes: 1. This parameter is characterized and is not 100% tested.  
2. AC measurement conditions:  
RL (connects to VCC): 1.3 k(2.5V, 5V), 10 k(1.8V)  
Input pulse voltages: 0.3 VCC to 0.7 VCC  
Input rise and fall times: 50 ns  
Input and output timing reference voltages: 0.5 VCC  
3. The Write Cycle Time of 5 ms only applies to the AT24C128/256 devices bearing the process letter “B” on the package (the  
mark is located in the lower right corner on the top side of the package).  
4. The AT24C128/256 bearing the process letter “B” in the package (the mark is located in the lower right corner on the top  
side of the package), guarantees 1 million write cycle endurance (1.8 – 3.6V).  
5. The AT24C128/256 bearing the process letter “B” on the package (the mark is located in the lower right corner on the top-  
side of the package) are approved for operation in the extended temperature range.  
6
AT24C128/256  
0670S–SEEPR–5/06  
AT24C128/256  
Device  
Operation  
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external  
device. Data on the SDA pin may change only during SCL low time periods (see Figure 4 on  
page 8). Data changes during SCL high periods will indicate a start or stop condition as  
defined below.  
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which  
must precede any other command (see Figure 5 on page 9).  
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a  
read sequence, the stop command will place the EEPROM in a standby power mode (see Fig-  
ure 5 on page 9).  
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the  
EEPROM in 8-bit words. The EEPROM sends a zero during the ninth clock cycle to acknowl-  
edge that it has received each word.  
STANDBY MODE: The AT24C128/256 features a low power standby mode which is enabled:  
a) upon power-up and b) after the receipt of the STOP bit and the completion of any internal  
operations.  
MEMORY RESET: After an interruption in protocol, power loss or system reset, any two-wire  
part can be reset by following these steps: (a) Clock up to 9 cycles, (b) look for SDA high in  
each cycle while SCL is high and then (c) create a start condition as SDA is high.  
7
0670S–SEEPR–5/06  
Figure 2. Bus Timing (SCL: Serial Clock, SDA: Serial Data I/O®)  
Figure 3. Write Cycle Timing (SCL: Serial Clock, SDA: Serial Data I/O)  
SCL  
SDA  
ACK  
8th BIT  
WORDn  
(1)  
t
wr  
START  
CONDITION  
STOP  
CONDITION  
Note:  
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.  
Figure 4. Data Validity  
8
AT24C128/256  
0670S–SEEPR–5/06  
AT24C128/256  
Figure 5. Start and Stop Definition  
Figure 6. Output Acknowledge  
Device  
Addressing  
The 128K/256K EEPROM requires an 8-bit device address word following a start condition to  
enable the chip for a read or write operation (see Figure 7 on page 11). The device address  
word consists of a mandatory one, zero sequence for the first five most significant bits as  
shown. This is common to all two-wire EEPROM devices.  
The 128K/256K uses the two device address bits A1, A0 to allow as many as four devices on  
the same bus. These bits must compare to their corresponding hardwired input pins. The A1  
and A0 pins use an internal proprietary circuit that biases them to a logic low condition if the  
pins are allowed to float.  
The eighth bit of the device address is the read/write operation select bit. A read operation is  
initiated if this bit is high and a write operation is initiated if this bit is low.  
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not  
made, the device will return to a standby state.  
DATA SECURITY: The AT24C128/256 has a hardware data protection scheme that allows the  
user to write protect the whole memory when the WP pin is at VCC  
.
9
0670S–SEEPR–5/06  
Write  
Operations  
BYTE WRITE: A write operation requires two 8-bit data word addresses following the device  
address word and acknowledgment. Upon receipt of this address, the EEPROM will again  
respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit  
data word, the EEPROM will output a zero. The addressing device, such as a microcontroller,  
then must terminate the write sequence with a stop condition. At this time the EEPROM enters  
an internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during  
this write cycle and the EEPROM will not respond until the write is complete (see Figure 8 on  
page 11).  
PAGE WRITE: The 128K/256K EEPROM is capable of 64-byte page writes.  
A page write is initiated the same way as a byte write, but the microcontroller does not send a  
stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges  
receipt of the first data word, the microcontroller can transmit up to 63 more data words. The  
EEPROM will respond with a zero after each data word received. The microcontroller must ter-  
minate the page write sequence with a stop condition (see Figure 9 on page 12).  
The data word address lower 6 bits are internally incremented following the receipt of each  
data word. The higher data word address bits are not incremented, retaining the memory page  
row location. When the word address, internally generated, reaches the page boundary, the  
following byte is placed at the beginning of the same page. If more than 64 data words are  
transmitted to the EEPROM, the data word address will “roll over” and previous data will be  
overwritten. The address “roll over” during write is from the last byte of the current page to the  
first byte of the same page.  
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the  
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a  
start condition followed by the device address word. The read/write bit is representative of the  
operation desired. Only if the internal write cycle has completed will the EEPROM respond  
with a zero, allowing the read or write sequence to continue.  
10  
AT24C128/256  
0670S–SEEPR–5/06  
AT24C128/256  
Read  
Operations  
Read operations are initiated the same way as write operations with the exception that the  
read/write select bit in the device address word is set to one. There are three read operations:  
current address read, random address read and sequential read.  
CURRENT ADDRESS READ: The internal data word address counter maintains the last  
address accessed during the last read or write operation, incremented by one. This address  
stays valid between operations as long as the chip power is maintained. The address “roll  
over” during read is from the last byte of the last memory page, to the first byte of the first  
page.  
Once the device address with the read/write select bit set to one is clocked in and acknowl-  
edged by the EEPROM, the current address data word is serially clocked out. The  
microcontroller does not respond with an input zero but does generate a following stop condi-  
tion (see Figure 10 on page 12).  
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data  
word address. Once the device address word and data word address are clocked in and  
acknowledged by the EEPROM, the microcontroller must generate another start condition.  
The microcontroller now initiates a current address read by sending a device address with the  
read/write select bit high. The EEPROM acknowledges the device address and serially clocks  
out the data word. The microcontroller does not respond with a zero but does generate a fol-  
lowing stop condition (see Figure 11 on page 12).  
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran-  
dom address read. After the microcontroller receives a data word, it responds with an  
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment  
the data word address and serially clock out sequential data words. When the memory  
address limit is reached, the data word address will “roll over” and the sequential read will con-  
tinue. The sequential read operation is terminated when the microcontroller does not respond  
with a zero but does generate a following stop condition (see Figure 12 on page 12).  
Figure 7. Device Address  
Figure 8. Byte Write  
11  
0670S–SEEPR–5/06  
Figure 9. Page Write  
Notes: (* = DON’T CARE bit)  
(† = DON’T CARE bit for the 128K)  
Figure 10. Current Address Read  
Figure 11. Random Read  
Notes: (* = DON’T CARE bit)  
(† = DON’T CARE bit for the 128K)  
Figure 12. Sequential Read  
12  
AT24C128/256  
0670S–SEEPR–5/06  
AT24C128/256  
AT24C128 Ordering Information(1)  
Ordering Code  
Package  
Operation Range  
AT24C128-10PI-2.7  
AT24C128N-10SI-2.7  
AT24C128W-10SI-2.7  
AT24C128-10TI-2.7  
8P3  
8S1  
8S2  
8A2  
Industrial Temperature  
(–40°C to 85°C)  
AT24C128-10PI-1.8  
AT24C128N-10SI-1.8  
AT24C128W-10SI-1.8  
AT24C128-10TI-1.8  
8P3  
8S1  
8S2  
8A2  
Industrial Temperature  
(–40°C to 85°C)  
AT24C128-10PU-2.7(2)  
AT24C128-10PU-1.8(2)  
AT24C128N-10SU-2.7(2)  
AT24C128N-10SU-1.8(2)  
AT24C128W-10SU-2.7(2)  
AT24C128W-10SU-1.8(2)  
AT24C128-10TU-2.7(2)  
AT24C128-10TU-1.8(2)  
AT24C128U2-10UU-1.8(2)  
AT24C128Y1-10YU-1.8(2)  
AT24C128Y4-10YU-1.8(2)  
8P3  
8P3  
8S1  
8S1  
8S2  
8S2  
8A2  
8A2  
8U2-1  
8Y1  
8Y4  
Lead-free/Halogen-free/  
Industrial Temperature  
(–40°C to 85°C)  
AT24C128-W2.7-11(3)  
AT24C128-W1.8-11(3)  
Die Sale  
Die Sale  
Industrial Temperature  
(–40°C to 85°C)  
Notes: 1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics tables.  
2. “U” designates Green package + RoHS compliant.  
3. Available in waffle pack and wafer form; order as SL719 for wafer form. Bumped die available upon request. Please contact  
Serial EEPROM Marketing.  
Package Type  
8P3  
8S1  
8S2  
8U2-1  
8Y1  
8Y4  
8A2  
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)  
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)  
8-lead, 0.200" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)  
8-ball, die Ball Grid Array Package (dBGA2)  
8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)  
8-lead, 6.00 mm x 4.90 mm Body, Dual Footprint, Non-leaded, Small Array Package (SAP)  
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)  
Options  
2.7  
1.8  
Low-voltage (2.7V to 5.5V)  
Low-voltage (1.8V to 3.6V)  
13  
0670S–SEEPR–5/06  
AT24C256 Ordering Information(1)  
Ordering Code  
Package  
Operation Range  
AT24C256-10PI-2.7  
AT24C256N-10SI-2.7  
AT24C256W-10SI-2.7  
AT24C256-10TI-2.7  
8P3  
8S1  
8S2  
8A2  
Industrial Temperature  
(–40°C to 85°C)  
AT24C256-10PI-1.8  
AT24C256N-10SI-1.8  
AT24C256W-10SI-1.8  
AT24C256-10TI-1.8  
8P3  
8S1  
8S2  
8A2  
Industrial Temperature  
(–40°C to 85°C)  
AT24C256-10PU-2.7(2)  
AT24C256-10PU-1.8(2)  
AT24C256N-10SU-2.7(2)  
AT24C256N-10SU-1.8(2)  
AT24C256W-10SU-2.7(2)  
AT24C256W-10SU-1.8(2)  
AT24C256-10TU-2.7(2)  
AT24C256-10TU-1.8(2)  
AT24C256U2-10UU-1.8(2)  
AT24C256Y1-10YU-1.8(2)  
AT24C256Y4-10YU-1.8(2)  
8P3  
8P3  
8S1  
8S1  
8S2  
8S2  
8A2  
8A2  
8U2-1  
8Y1  
8Y4  
Lead-free/Halogen-free/  
Industrial Temperature  
(–40°C to 85°C)  
AT24C256-W2.7-11(3)  
AT24C256-W1.8-11(3)  
Die Sale  
Die Sale  
Industrial Temperature  
(–40°C to 85°C)  
Notes: 1. This device is not recommended for new design. Please refer to AT24C256B datasheet. For 2.7V devices used in the 4.5V to  
5.5V range, please refer to performance values in the AC and DC characteristics tables.  
2. “U” designates Green Package + RoHS compliant.  
3. Available in waffle pack and wafer form; order as SL719 for wafer form. Bumped die available upon request. Please contact  
Serial EEPROM Marketing.  
Package Type  
8P3  
8S1  
8S2  
8U2-1  
8Y1  
8Y4  
8A2  
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)  
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)  
8-lead, 0.200" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)  
8-ball, die Ball Grid Array Package (dBGA2)  
8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)  
8-lead, 6.00 mm x 4.90 mm Body, Dual Footprint, Non-leaded, Small Array Package (SAP)  
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)  
Options  
2.7  
1.8  
Low-voltage (2.7V to 5.5V)  
Low-voltage (1.8V to 3.6V)  
14  
AT24C128/256  
0670S–SEEPR–5/06  
AT24C128/256  
Packaging Information  
8P3 – PDIP  
E
1
E1  
N
Top View  
c
eA  
End View  
COMMON DIMENSIONS  
(Unit of Measure = inches)  
D
e
MIN  
MAX  
NOM  
NOTE  
SYMBOL  
D1  
A2 A  
A
0.210  
0.195  
0.022  
0.070  
0.045  
0.014  
0.400  
2
A2  
b
0.115  
0.014  
0.045  
0.030  
0.008  
0.355  
0.005  
0.300  
0.240  
0.130  
0.018  
0.060  
0.039  
0.010  
0.365  
5
6
6
b2  
b3  
c
D
3
3
4
3
b2  
L
D1  
E
b3  
4 PLCS  
0.310  
0.250  
0.325  
0.280  
b
E1  
e
0.100 BSC  
0.300 BSC  
0.130  
Side View  
eA  
L
4
2
0.115  
0.150  
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.  
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.  
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.  
4. E and eA measured with the leads constrained to be perpendicular to datum.  
5. Pointed or rounded lead tips are preferred to ease insertion.  
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).  
01/09/02  
TITLE  
DRAWING NO.  
REV.  
2325 Orchard Parkway  
San Jose, CA 95131  
8P3, 8-lead, 0.300" Wide Body, Plastic Dual  
In-line Package (PDIP)  
8P3  
B
R
15  
0670S–SEEPR–5/06  
8S1 – JEDEC SOIC  
C
1
E
E1  
L
N
Top View  
End View  
e
B
COMMON DIMENSIONS  
(Unit of Measure = mm)  
A
MIN  
1.35  
0.10  
MAX  
1.75  
0.25  
NOM  
NOTE  
SYMBOL  
A1  
A
A1  
b
0.31  
0.17  
4.80  
3.81  
5.79  
0.51  
0.25  
5.00  
3.99  
6.20  
C
D
E1  
E
e
D
Side View  
1.27 BSC  
L
0.40  
0˚  
1.27  
8˚  
Note:  
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.  
10/7/03  
REV.  
TITLE  
DRAWING NO.  
1150 E. Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing  
8S1  
B
R
Small Outline (JEDEC SOIC)  
16  
AT24C128/256  
0670S–SEEPR–5/06  
AT24C128/256  
8S2 – EIAJ SOIC  
C
1
E
E1  
L
N
Top View  
End View  
e
b
COMMON DIMENSIONS  
(Unit of Measure = mm)  
A
MIN  
1.70  
0.05  
0.35  
0.15  
5.13  
5.18  
7.70  
0.51  
0˚  
MAX  
2.16  
0.25  
0.48  
0.35  
5.35  
5.40  
8.26  
0.85  
8˚  
NOM  
NOTE  
SYMBOL  
A1  
A
A1  
b
5
5
C
D
E1  
E
D
2, 3  
Side View  
L
e
1.27 BSC  
4
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.  
2. Mismatch of the upper and lower dies and resin burrs are not included.  
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.  
4. Determines the true geometric position.  
5. Values b and C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/0.005 mm.  
10/7/03  
TITLE  
REV.  
DRAWING NO.  
2325 Orchard Parkway  
San Jose, CA 95131  
8S2, 8-lead, 0.209" Body, Plastic Small  
Outline Package (EIAJ)  
8S2  
C
R
17  
0670S–SEEPR–5/06  
8U2-1 – dBGA2  
D
A1 BALL PAD CORNER  
1.  
b
E
A1  
A
A2  
Top View  
A1 BALL PAD CORNER  
Side View  
2
1
A
B
C
D
e
(e1)  
d
(d1)  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
Bottom View  
8 Solder Balls  
SYMBOL  
MAX  
1.00  
0.25  
0.50  
0.35  
MIN  
0.81  
0.15  
0.40  
0.25  
NOM  
0.91  
NOTE  
A
A1  
A2  
b
0.20  
0.45  
0.30  
2
D
2.35 BSC  
3.73 BSC  
0.75 BSC  
0.74 REF  
0.75 BSC  
0.80 REF  
1. This drawing is for general information only.  
2. Dimension ‘b’ is measured at the maximum solder ball diameter.  
E
e
e1  
d
d1  
6/24/03  
TITLE  
REV.  
DRAWING NO.  
1150 E. Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
8U2-1, 8-ball, 2.35 x 3.73 mm Body, 0.75 mm pitch,  
Small Die Ball Grid Array Package (dBGA2)  
R
PO8U2-1  
A
18  
AT24C128/256  
0670S–SEEPR–5/06  
AT24C128/256  
8Y1 – MAP  
PIN 1 INDEX AREA  
A
1
3
4
2
PIN 1 INDEX AREA  
E1  
D1  
D
L
8
6
5
7
b
e
A1  
E
Bottom View  
End View  
Top View  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
A
SYMBOL  
MIN  
MAX  
0.90  
0.05  
5.10  
3.20  
1.15  
1.15  
0.35  
NOM  
NOTE  
A
A1  
D
0.00  
4.70  
2.80  
0.85  
0.85  
0.25  
4.90  
3.00  
1.00  
1.00  
0.30  
0.65 TYP  
0.60  
Side View  
E
D1  
E1  
b
e
L
0.50  
0.70  
2/28/03  
TITLE  
DRAWING NO.  
REV.  
2325 Orchard Parkway  
San Jose, CA 95131  
8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package  
(MAP) Y1  
8Y1  
C
R
19  
0670S–SEEPR–5/06  
AT24C128/256  
8Y4 – SAP  
PIN 1 INDEX AREA  
A
PIN 1 ID  
D
E1  
L
A1  
E
e
b
e1  
A
COMMON DIMENSIONS  
(Unit of Measure = mm)  
SYMBOL  
MIN  
MAX  
0.90  
0.05  
6.20  
5.10  
3.15  
3.15  
0.45  
NOM  
NOTE  
A
A1  
D
0.00  
5.80  
4.70  
2.85  
2.85  
0.35  
6.00  
E
4.90  
D1  
E1  
b
3.00  
3.00  
0.40  
e
1.27 TYP  
3.81 REF  
0.60  
e1  
L
0.50  
0.70  
5/24/04  
DRAWING NO.  
REV.  
TITLE  
1150 E. Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
8Y4, 8-lead (6.00 x 4.90 mm Body) SOIC Array Package  
(SAP) Y4  
8Y4  
A
R
20  
0670S–SEEPR–5/06  
AT24C128/256  
8A2 – TSSOP  
3
2 1  
Pin 1 indicator  
this corner  
E1  
E
L1  
N
L
Top View  
End View  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
MIN  
MAX  
NOM  
3.00  
NOTE  
SYMBOL  
D
2.90  
3.10  
2, 5  
A
b
E
6.40 BSC  
4.40  
E1  
A
4.30  
4.50  
1.20  
1.05  
0.30  
3, 5  
4
A2  
b
0.80  
0.19  
1.00  
e
A2  
D
e
0.65 BSC  
0.60  
L
0.45  
0.75  
Side View  
L1  
1.00 REF  
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,  
datums, etc.  
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed  
0.15 mm (0.006 in) per side.  
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm  
(0.010 in) per side.  
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the  
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between  
protrusion and adjacent lead is 0.07 mm.  
5. Dimension D and E1 to be determined at Datum Plane H.  
5/30/02  
DRAWING NO.  
TITLE  
REV.  
2325 Orchard Parkway  
San Jose, CA 95131  
8A2, 8-lead, 4.4 mm Body, Plastic  
Thin Shrink Small Outline Package (TSSOP)  
B
8A2  
R
21  
0670S–SEEPR–5/06  
Revision History  
Doc. Rev.  
Comments  
0670S  
Implemented Revision History page; Added Note 1 “Not recommended for  
new design; please refer to AT24C256B datasheet” to AT24C256 part on  
Pages 1 and 14.  
22  
AT24C128/256  
0670S–SEEPR–5/06  
Atmel Corporation  
Atmel Operations  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 487-2600  
Memory  
RF/Automotive  
Theresienstrasse 2  
Postfach 3535  
74025 Heilbronn, Germany  
Tel: (49) 71-31-67-0  
Fax: (49) 71-31-67-2340  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
Regional Headquarters  
Microcontrollers  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
1150 East Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906, USA  
Tel: 1(719) 576-3300  
Europe  
Atmel Sarl  
Route des Arsenaux 41  
Case Postale 80  
CH-1705 Fribourg  
Switzerland  
Tel: (41) 26-426-5555  
Fax: (41) 26-426-5500  
Fax: 1(719) 540-1759  
Biometrics/Imaging/Hi-Rel MPU/  
High Speed Converters/RF Datacom  
Avenue de Rochepleine  
La Chantrerie  
BP 70602  
44306 Nantes Cedex 3, France  
Tel: (33) 2-40-18-18-18  
Fax: (33) 2-40-18-19-60  
BP 123  
38521 Saint-Egreve Cedex, France  
Tel: (33) 4-76-58-30-00  
Fax: (33) 4-76-58-34-80  
Asia  
Room 1219  
Chinachem Golden Plaza  
77 Mody Road Tsimshatsui  
East Kowloon  
Hong Kong  
Tel: (852) 2721-9778  
Fax: (852) 2722-1369  
ASIC/ASSP/Smart Cards  
Zone Industrielle  
13106 Rousset Cedex, France  
Tel: (33) 4-42-53-60-00  
Fax: (33) 4-42-53-60-01  
1150 East Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906, USA  
Tel: 1(719) 576-3300  
Japan  
9F, Tonetsu Shinkawa Bldg.  
1-24-8 Shinkawa  
Chuo-ku, Tokyo 104-0033  
Japan  
Tel: (81) 3-3523-3551  
Fax: (81) 3-3523-7581  
Fax: 1(719) 540-1759  
Scottish Enterprise Technology Park  
Maxwell Building  
East Kilbride G75 0QR, Scotland  
Tel: (44) 1355-803-000  
Fax: (44) 1355-242-743  
Literature Requests  
www.atmel.com/literature  
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0670S–SEEPR–5/06  

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