AT24C16B-TH-T [ATMEL]
Two-wire Serial EEPROM; 两线串行EEPROM型号: | AT24C16B-TH-T |
厂家: | ATMEL |
描述: | Two-wire Serial EEPROM |
文件: | 总27页 (文件大小:799K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1. Features
• Low-voltage and Standard-voltage Operation
– 1.8 (VCC = 1.8V to 5.5V)
• Internally Organized 2048 x 8 (16K)
• Two-wire Serial Interface
• Schmitt Trigger, Filtered Inputs for Noise Suppression
• Bidirectional Data Transfer Protocol
• 1 MHz (5V, 2.5V), 400 kHz (1.8V) Compatibility
• Write Protect Pin for Hardware Data Protection
• 16-byte Page (16K) Write Modes
Two-wire
• Partial Page Writes Allowed
Serial EEPROM
16K (2048 x 8)
• Self-timed Write Cycle (5 ms max)
• High-reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
• 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra-Thin Mini-MAP (MLP 2x3), 5-lead SOT23,
8-lead Ultra Lead Frame Land Grid Array (ULA), 8-lead TSSOP and 8-ball dBGA2
Packages
AT24C16B
• Lead-free/Halogen-free
• Die Sales: Wafer Form, Tape and Reel, and Bumped Wafers
2. Description
The AT24C16B provides 16384 bits of serial electrically erasable and programmable
read-only memory (EEPROM) organized as 2048 words of 8 bits each. The device is
optimized for use in many industrial and commercial applications where low-power
and low-voltage operation are essential. The AT24C16B is available in space-saving
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 5-lead
SOT23, 8-lead Ultra Lead Frame Land Grid Array (ULA), 8-lead TSSOP, and 8-ball
dBGA2 packages and is accessed via a Two-wire serial interface. In addition, the
AT24C16B is available in 1.8V (1.8V to 5.5V) version.
Table 2-1.
Pin Name
NC
Pin Configuration
Function
8-lead Ultra Thin
Mini-MAP (MLP 2x3)
8-ball dBGA2
No Connect
VCC 8
WP 7
1 NC
2 NC
3 NC
4 GND
8
7
6
5
1
2
3
4
NC
VCC
WP
NC
SDA
Serial Data
SCL 6
SDA 5
NC
SCL
SDA
SCL
Serial Clock Input
Write Protect
Ground
GND
Bottom View
Bottom View
WP
8-lead TSSOP
8-lead SOIC
GND
NC
NC
1
2
3
4
8
7
6
5
VCC
WP
NC
NC
1
2
3
4
8
7
6
5
VCC
WP
VCC
Power Supply
NC
SCL
SDA
NC
SCL
SDA
8-lead Ultra Lead Frame
Land Grid Array (ULA)
GND
GND
VCC 8
WP 7
1 NC
2 NC
3 NC
4 GND
5-lead SOT23
8-lead PDIP
8
7
6
5
VCC
NC
1
2
3
4
WP
SCL
GND
SDA
1
2
3
5
SCL 6
SDA 5
WP
NC
NC
SCL
SDA
VCC
4
GND
Bottom View
5175E–SEEPR–3/09
Absolute Maximum Ratings
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Operating Temperature..................................–55°C to +125°C
Storage Temperature.....................................–65°C to +150°C
Voltage on Any Pin
with Respect to Ground....................................–1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Figure 2-1. Block Diagram
VCC
GND
WP
START
STOP
LOGIC
SCL
SDA
SERIAL
CONTROL
LOGIC
EN
H.V. PUMP/TIMING
LOAD
COMP
LOAD
DATA WORD
DATA RECOVERY
EEPROM
DEVICE
ADDRESS
COMPARATOR
INC
R/W
ADDR/COUNTER
SERIAL MUX
Y DEC
DOUT/ACK
LOGIC
DIN
DOUT
2
AT24C16B
5175E–SEEPR–3/09
AT24C16B
3. Pin Description
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM
device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open-
drain driven and may be wire-ORed with any number of other open-drain or open-collector
devices.
DEVICE/PAGE ADDRESSES: The AT24C16B does not use the device address pins, which lim-
its the number of devices on a single bus to one.
WRITE PROTECT (WP): The AT24C16B has a write protect pin that provides hardware data
protection. The write protect pin allows normal read/write operations when connected to ground
(GND). When the write protect pin is connected to VCC, the write protection feature is enabled
and operates as shown in Table 3-1.
Table 3-1.
Write Protect
Part of the Array Protected
WP Pin
Status
24C16B
Full (16K) Array
At VCC
At GND
Normal Read/Write Operations
4. Memory Organization
AT24C16B, 16K SERIAL EEPROM: Internally organized with 128 pages of 16 bytes each, the
16K requires an 11-bit data word address for random word addressing.
3
5175E–SEEPR–3/09
Table 4-1.
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V
Pin Capacitance(1)
Symbol
CI/O
Test Condition
Max
8
Units
pF
Conditions
VI/O = 0V
VIN = 0V
Input/Output Capacitance (SDA)
Input Capacitance (SCL)
CIN
6
pF
Note:
1. This parameter is characterized and is not 100% tested.
Table 4-2.
DC Characteristics
Applicable over recommended operating range from: TAI = −40°C to +85°C, VCC = +1.8V to +5.5V (unless otherwise noted)
Symbol
VCC1
ICC1
Parameter
Test Condition
Min
Typ
Max
5.5
2.0
3.0
1.0
6.0
Units
V
Supply Voltage
Supply Current
Supply Current
1.8
VCC = 5.0V
VCC = 5.0V
VCC = 1.8V
VCC = 5.5V
READ at 400 kHz
WRITE at 400 kHz
1.0
2.0
mA
mA
µA
ICC2
Standby Current
(1.8V option)
ISB1
VIN = VCC or VSS
Input Leakage
ILI
VIN = VCC or VSS
0.10
0.05
3.0
3.0
µA
µA
Current VCC = 5.0V
Output Leakage
Current VCC = 5.0V
ILO
VOUT = VCC or VSS
VIL
Input Low Level(1)
Input High Level(1)
Output Low Level
Output Low Level
−0.6
VCC x 0.3
VCC + 0.5
0.2
V
V
V
V
VIH
VCC x 0.7
VOL1
VOL2
VCC = 1.8V
VCC = 3.0V
IOL = 0.15 mA
IOL = 2.1 mA
0.4
Notes: 1. VIL min and VIH max are reference only and are not tested.
4
AT24C16B
5175E–SEEPR–3/09
AT24C16B
Table 4-3.
AC Characteristics (Industrial Temperature)
Applicable over recommended operating range from TAI = −40°C to +85°C, VCC = +1.8V to +5.5V, CL = 100 pF (unless oth-
erwise noted). Test conditions are listed in Note 2.
1.8-volt
Max
2.5, 5.0-volt
Symbol
fSCL
Parameter
Min
Min
Max
Units
kHz
µs
Clock Frequency, SCL
Clock Pulse Width Low
Clock Pulse Width High
Clock Low to Data Out Valid
400
1000
tLOW
1.3
0.6
0.4
0.4
tHIGH
tAA
µs
0.05
0.9
0.05
0.55
µs
Time the bus must be free before a new transmission
can start(1)
tBUF
1.3
0.5
µs
tHD.STA
tSU.STA
tHD.DAT
tSU.DAT
tR
Start Hold Time
0.6
0.6
0
0.25
0.25
0
µs
µs
µs
ns
µs
ns
µs
ns
ms
Start Set-up Time
Data In Hold Time
Data In Set-up Time
Inputs Rise Time(1)
Inputs Fall Time(1)
Stop Set-up Time
Data Out Hold Time
Write Cycle Time
100
100
0.3
0.3
tF
300
100
tSU.STO
tDH
0.6
50
0.25
50
tWR
5
5
Write
Cycles
Endurance(1)
25°C, Page Mode, 3.3V
1,000,000
Notes: 1. This parameter is characterized and is not 100% tested.
2. AC measurement conditions:
RL (connects to VCC): 1.3 kΩ (2.5V, 5.0V), 10 kΩ (1.8V)
Input pulse voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 50 ns
Input and output timing reference voltages: 0.5 VCC
5
5175E–SEEPR–3/09
5. Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external
device. Data on the SDA pin may change only during SCL low time periods (see Figure 7-2 on
page 8). Data changes during SCL high periods will indicate a start or stop condition as defined
below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which
must precede any other command (see Figure 7-3 on page 8).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a
read sequence, the stop command will place the EEPROM in a standby power mode (see Fig-
ure 7-3 on page 8).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has received each
word. This happens during the ninth clock cycle.
STANDBY MODE: The AT24C16B features a low-power standby mode which is enabled: (a)
upon power-up and (b) after the receipt of the STOP bit and the completion of any internal
operations.
2-WIRE SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any
2-wire part can be protocol reset by following these steps:
1. Create a start bit condition.
2. Clock 9 cycles.
3. Create another start bit followed by stop bit condition as shown below.
Dummy Clock Cycles
Start bit
Stop bit
Start bit
1
2
3
8
9
SCL
SDA
6
AT24C16B
5175E–SEEPR–3/09
AT24C16B
6. Bus Timing
Figure 6-1. SCL: Serial Clock, SDA: Serial Data I/O®
tHIGH
tF
tR
tLOW
tLOW
SCL
tSU.STA
tHD.STA
tHD.DAT
tSU.DAT
tSU.STO
SDA IN
tAA
tDH
tBUF
SDA OUT
7. Write Cycle Timing
Figure 7-1. SCL: Serial Clock, SDA: Serial Data I/O
SCL
ACK
SDA
8th BIT
WORDn
(1)
t
wr
START
CONDITION
STOP
CONDITION
Note:
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
7
5175E–SEEPR–3/09
Figure 7-2. Data Validity
SDA
SCL
DATA STABLE
DATA STABLE
DATA
CHANGE
Figure 7-3. Start and Stop Definition
SDA
SCL
START
STOP
Figure 7-4. Output Acknowledge
1
8
9
SCL
DATA IN
DATA OUT
START
ACKNOWLEDGE
8
AT24C16B
5175E–SEEPR–3/09
AT24C16B
8. Device Addressing
The 16K EEPROM device requires an 8-bit device address word following a start condition to
enable the chip for a read or write operation (refer to Figure 10-1).
The device address word consists of a mandatory one, zero sequence for the first four most sig-
nificant bits as shown. This is common to all the EEPROM devices.
The next 3 bits used for memory page addressing and are the most significant bits of the data
word address which follows.
The eighth bit of the device address is the read/write operation select bit. A read operation is ini-
tiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not
made, the chip will return to a standby state.
9. Write Operations
BYTE WRITE: A write operation requires an 8-bit data word address following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit data
word, the EEPROM will output a zero and the addressing device, such as a microcontroller,
must terminate the write sequence with a stop condition. At this time the EEPROM enters an
internally timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this
write cycle and the EEPROM will not respond until the write is complete (see Figure 10-2 on
page 11).
PAGE WRITE: The 16K EEPROM is capable of an 16-byte page write.
A page write is initiated the same as a byte write, but the microcontroller does not send a stop
condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to fifteen data words. The
EEPROM will respond with a zero after each data word received. The microcontroller must ter-
minate the page write sequence with a stop condition (see Figure 10-3 on page 11).
The data word address lower three bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the fol-
lowing byte is placed at the beginning of the same page. If more than sixteen data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will be
overwritten.
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond with
a zero allowing the read or write sequence to continue.
9
5175E–SEEPR–3/09
10. Read Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to one. There are three read operations:
current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll over”
during read is from the last byte of the last memory page to the first byte of the first page. The
address “roll over” during write is from the last byte of the current page to the first byte of the
same page.
Once the device address with the read/write select bit set to one is clocked in and acknowledged
by the EEPROM, the current address data word is serially clocked out. The microcontroller does
not respond with an input zero but does generate a following stop condition (see Figure 10-4 on
page 11).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition. The
microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a zero but does generate a follow-
ing stop condition (see Figure 10-5 on page 12).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran-
dom address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory address
limit is reached, the data word address will “roll over” and the sequential read will continue. The
sequential read operation is terminated when the microcontroller does not respond with a zero
but does generate a following stop condition (see Figure 10-6 on page 12).
Figure 10-1. Device Address
P
P
P
16
2
1
0
MSB
10
AT24C16B
5175E–SEEPR–3/09
AT24C16B
Figure 10-2. Byte Write
Figure 10-3. Page Write
Figure 10-4. Current Address Read
11
5175E–SEEPR–3/09
Figure 10-5. Random Read
Figure 10-6. Sequential Read
12
AT24C16B
5175E–SEEPR–3/09
AT24C16B
AT24C16B Ordering Information
Ordering Codes
Voltage
1.8
Package
8P3
Operating Range
AT24C16B-PU (Bulk Form Only)
AT24C16BN-SH-B(1) (NiPdAu Lead Finish)
AT24C16BN-SH-T(2) (NiPdAu Lead Finish)
AT24C16B-TH-B(1) (NiPdAu Lead Finish)
AT24C16B-TH-T(2) (NiPdAu Lead Finish)
AT24C16BY6-YH-T(2) (NiPdAu Lead Finish)
AT24C16BD3-DH-T(2) (NiPdAu Lead Finish)
AT24C16BTSU-T(2)
1.8
8S1
1.8
8S1
1.8
8A2
Lead-Free/Halogen-Free
Industrial Temperature
(-40°C to 85°C)
1.8
8A2
1.8
8Y6
1.8
8D3
1.8
5TS1
8U3-1
AT24C16BU3-UU-T(2)
1.8
Industrial Temperature
AT24C16B-W-11(3)
1.8
Die Sales
(-40°C to 85°C)
Notes: 1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP, Ultra Thin Mini MAP, SOT23, dBGA2 = 5K per reel.
3. Available in tape and reel, and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request.
Please contact Serial Interface Marketing.
Package Type
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8-lead, 2.0 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP 2x3 mm)
5-lead, 2.90 mm x 1.60 mm Body, Plastic Thin Shrink Small Outline Package (SOT23)
8-ball, die Ball Grid Array Package (dBGA2)
8P3
8S1
8A2
8Y6
5TS1
8U3-1
8D3
8-lead, 1.80 mm x 2.20 mm Body, Ultra Lead Frame Land Grid Array (ULA)
Options
–1.8
Low-voltage (1.8V to 5.5V)
13
5175E–SEEPR–3/09
11. Part Marking
11.1 8-PDIP
Seal Year
TOP MARK
|
|
Seal Week
|
|
|---|---|---|---|---|---|---|---|
A
T
M
L
U
Y
W
W
|---|---|---|---|---|---|---|---|
1
6
B
1
|---|---|---|---|---|---|---|---|
Lot Number
*
|---|---|---|---|---|---|---|---|
|
Pin 1 Indicator (Dot)
Y = SEAL YEAR
WW = SEAL WEEK
02 = Week 2
04 = Week 4
:: : :::: :
:: : :::: ::
50 = Week 50
52 = Week 52
6: 2006
7: 2007
8: 2008
9: 2009
0: 2010
1: 2011
2: 2012
3: 2013
Lot Number to Use ALL Characters in Marking
BOTTOM MARK
No Bottom Mark
14
AT24C16B
5175E–SEEPR–3/09
AT24C16B
11.2 8-SOIC
Seal Year
TOP MARK
|
|
Seal Week
|
|
|---|---|---|---|---|---|---|---|
A
T
M
L
H
Y
W
W
|---|---|---|---|---|---|---|---|
1
6
B
1
|---|---|---|---|---|---|---|---|
Lot Number
*
|---|---|---|---|---|---|---|---|
|
Pin 1 Indicator (Dot)
Y = SEAL YEAR
WW = SEAL WEEK
02 = Week 2
04 = Week 4
:: : :::: :
:: : :::: ::
50 = Week 50
52 = Week 52
6: 2006
7: 2007
8: 2008
9: 2009
0: 2010
1: 2011
2: 2012
3: 2013
Lot Number to Use ALL Characters in Marking
BOTTOM MARK
No Bottom Mark
15
5175E–SEEPR–3/09
11.3 8-TSSOP
TOP MARK
Pin 1 Indicator (Dot)
|
|---|---|---|---|
*
H
Y
W
W
|---|---|---|---|---|
1
6
B
1
|---|---|---|---|---|
BOTTOM MARK
|---|---|---|---|---|---|---|
P
H
|---|---|---|---|---|---|---|
A
A
A
A
A
A
A
|---|---|---|---|---|---|---|
<- Pin 1 Indicator
Y = SEAL YEAR
WW = SEAL WEEK
02 = Week 2
04 = Week 4
:: : :::: :
:: : :::: ::
50 = Week 50
52 = Week 52
6: 2006
7: 2007
8: 2008
9: 2009
0: 2010
1: 2011
2: 2012
3: 2013
16
AT24C16B
5175E–SEEPR–3/09
AT24C16B
11.4 8-Ultra Thin Mini-Map
TOP MARK
|---|---|---|
1
6
B
|---|---|---|
H
1
|---|---|---|
Y
X
X
|---|---|---|
*
|
Pin 1 Indicator (Dot)
Y = YEAR OF ASSEMBLY
XX = ATMEL LOT NUMBER TO COORESPOND WITH
NSEB TRACE CODE LOG BOOK.
(e.g. XX = AA, AB, AC,...AX, AY, AZ)
Y = SEAL YEAR
6: 2006
7: 2007
8: 2008
9: 2009
0: 2010
1: 2011
2: 2012
3: 2013
11.5 8-ULA
TOP MARK
|---|---|---|
1
6
B
|---|---|---|
Y
X
X
|---|---|---|
*
|
Pin 1 Indicator (Dot)
Y = BUILD YEAR
2006 = 6
2007 = 7
2008 = 8
Etc. . .
XX = ATMEL LOT NUMBER TO COORESPOND WITH
NSEB TRACE CODE LOG BOOK.
(e.g. XX = AA, AB, AC,...AX, AY, AZ)
17
5175E–SEEPR–3/09
11.6 dBGA2
TOP MARK
LINE 1-------> 16BU
LINE 2-------> PYMTC
|<-- Pin 1 This Corner
P = COUNTRY OF ORIGIN
Y = ONE DIGIT YEAR CODE
4: 2004 7: 2007
5: 2005 8: 2008
6: 2006 9: 2009
M = SEAL MONTH (USE ALPHA DESIGNATOR A-L)
A = JANUARY
B = FEBRUARY
" " """""""
J = OCTOBER
K = NOVEMBER
L = DECEMBER
TC = TRACE CODE (ATMEL LOT
NUMBERS TO CORRESPOND
WITH ATK TRACE CODE LOG BOOK)
11.7 SOT23
TOP MARK
|---|---|---|---|---|
Line 1 -----------> 1 6 B 1 U
|---|---|---|---|---|
*
|
XXX = Device
V = Voltage Indicator
U = Material Set
Pin 1 Indicator (Dot)
BOTTOM MARK
|---|---|---|---|
Y M T C
|---|---|---|---|
Y = One Digit Year Code
M = Seal Month
(Use Alpha Designator A-L)
TC = Trace Code
18
AT24C16B
5175E–SEEPR–3/09
AT24C16B
12. Packaging Information
12.1 8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
MIN
–
MAX
0.210
0.195
0.022
0.070
0.045
0.014
0.400
–
NOM
–
NOTE
SYMBOL
D1
A2 A
A
2
A2
b
0.115
0.014
0.045
0.030
0.008
0.355
0.005
0.300
0.240
0.130
0.018
0.060
0.039
0.010
0.365
–
5
6
6
b2
b3
c
D
3
3
4
3
b2
L
D1
E
b3
4 PLCS
0.310
0.250
0.100 BSC
0.300 BSC
0.130
0.325
0.280
b
E1
e
Side View
eA
L
4
2
0.115
0.150
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
8P3
B
R
19
5175E–SEEPR–3/09
12.2 8S1 – JEDEC SOIC
C
1
E
E1
L
N
∅
Top View
End View
e
B
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.35
0.10
MAX
1.75
0.25
NOM
NOTE
SYMBOL
A1
A
–
–
A1
b
0.31
0.17
4.80
3.81
5.79
–
0.51
0.25
5.00
3.99
6.20
C
D
E1
E
–
–
D
–
–
Side View
e
1.27 BSC
L
0.40
0˚
–
–
1.27
8˚
∅
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
10/7/03
REV.
TITLE
DRAWING NO.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
8S1
B
R
Small Outline (JEDEC SOIC)
20
AT24C16B
5175E–SEEPR–3/09
AT24C16B
12.3 8A2 – TSSOP
3
2 1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
MAX
NOM
3.00
NOTE
SYMBOL
D
2.90
3.10
2, 5
A
b
E
6.40 BSC
4.40
E1
A
4.30
–
4.50
1.20
1.05
0.30
3, 5
–
A2
b
0.80
0.19
1.00
e
A2
–
4
D
e
0.65 BSC
0.60
L
0.45
0.75
Side View
L1
1.00 REF
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
5/30/02
DRAWING NO.
TITLE
REV.
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
2325 Orchard Parkway
San Jose, CA 95131
B
8A2
R
21
5175E–SEEPR–3/09
12.4 8Y6 - Mini Map
A
D2
b
((88XX))
Piin 1
Index
Arreeaa
Piinn 11 IIDD
L (8X)
D
e (6XX)
A2
A1
1.5500 RREEFF..
A3
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
MAX
NOM
2.00 BSC
3.00 BSC
1.50
NOTE
SYMBOL
D
E
D2
E2
A
1.40
1.60
1.40
0.60
0.05
0.55
-
-
-
-
A1
A2
A3
L
0.0
-
0.02
-
0.20 REF
0.30
0.20
0.20
0.40
0.30
e
0.50 BSC
0.25
b
2
Notes:
1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions,
tolerances, datums, etc.
2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the
terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area.
3. Soldering the large thermal pad is optional, but not recommended. No electrical connection is accomplished to the
device through this pad, so if soldered it should be tied to ground
10/16/07
REV.
TITLE
DRAWING NO.
2325 Orchard Parkway
San Jose, CA 95131
8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map,
Dual No Lead Package (DFN) ,(MLP 2x3)
8Y6
D
R
22
AT24C16B
5175E–SEEPR–3/09
AT24C16B
12.5 5TS1 – SOT23
e1
C
4
5
E1
C
E
L
L1
1
3
2
End View
Top View
b
A2
A
Seating
Plane
A1
e
D
COMMON DIMENSIONS
(Unit of Measure = mm)
Side View
MIN
–
MAX
1.10
0.10
1.00
0.20
NOM
–
NOTE
SYMBOL
NOTES: 1. This drawing is for general information only. Refer to JEDEC Drawing
MO-193, Variation AB, for additional information.
A
2. Dimension D does not include mold flash, protrusions, or gate burrs.
A1
A2
c
0.00
0.70
0.08
–
Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per end.
Dimension E1 does not include interlead flash or protrusion. Interlead
flash or protrusion shall not exceed 0.15 mm per side.
3. The package top may be smaller than the package bottom. Dimensions
D and E1 are determined at the outermost extremes of the plastic body
exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
4. These dimensions apply to the flat section of the lead between 0.08 mm
and 0.15 mm from the lead tip.
5. Dimension "b" does not include Dambar protrusion. Allowable Dambar
protrusion shall be 0.08 mm total in excess of the "b" dimension at
maximum material condition. The Dambar cannot be located on the lower
radius of the foot. Minimum space between protrusion and an adjacent lead
shall not be less than 0.07 mm.
0.90
–
4
D
2.90 BSC
2.80 BSC
1.60 BSC
0.60 REF
0.95 BSC
1.90 BSC
–
2, 3
2, 3
2, 3
E
E1
L1
e
e1
b
0.30
0.50
4, 5
6/25/03
TITLE
REV.
DRAWING NO.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
5TS1, 5-lead, 1.60 mm Body, Plastic Thin Shrink
Small Outline Package (SHRINK SOT)
R
PO5TS1
A
23
5175E–SEEPR–3/09
12.6 8U3-1 – dBGA2
E
D
1.
b
A1
PIN 1 BALL PAD CORNER
A2
Top View
A
PIN 1 BALL PAD CORNER
Side View
1
2
3
4
(d1)
d
7
6
5
8
e
COMMON DIMENSIONS
(Unit of Measure = mm)
(e1)
MIN
0.71
0.10
0.40
0.20
MAX
0.91
0.20
0.50
0.30
NOM
0.81
NOTE
SYMBOL
Bottom View
8 SOLDER BALLS
A
A1
A2
b
0.15
0.45
0.25
D
1.50 BSC
2.00 BSC
0.50 BSC
0.25 REF
1.00 BSC
0.25 REF
1. Dimension “b” is measured at the maximum solder ball diameter.
This drawing is for general information only.
E
e
e1
d
d1
6/24/03
TITLE
REV.
DRAWING NO.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch,
PO8U3-1
A
R
Small Die Ball Grid Array Package (dBGA2)
24
AT24C16B
5175E–SEEPR–3/09
AT24C16B
12.7 8D3 - ULA
D
e1
b
7
5
6
8
L
E
PIN #1 ID
0.10
0.15
PIN #1 ID
A1
2
4
1
3
b
e
A
BOTTOM VIEW
SIDE VIEW
TOP VIEW
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN
–
MAX
0.40
0.05
1.90
2.30
0.25
NOM
–
NOTE
A
A1
D
E
0.00
1.70
2.10
0.15
–
1.80
2.20
b
0.20
e
0.40 TYP
1.20 REF
0.30
e1
L
0.25
0.35
11/15/05
TITLE
DRAWING NO.
8D3
REV.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8D3, 8-lead (1.80 x 2.20 mm Body) Ultra Leadframe
Land Grid Array (ULLGA) D3
0
R
25
5175E–SEEPR–3/09
13. Revision History
Lit No.
5175E
5175D
Date
Comment
3/2009
6/2008
Changed the Vcc to 5.5V in the test condition for Isb1
Deleted A0, A1, A2 pin-outs
AT24C16B product with date code 742 or later supports 5Vcc operation
Added ULA package information
5175C
11/2007
Removed reference to Waffle Pack
Corrected Note 3 on Page 13
5175B
5175A
4/2007
3/2007
Added lines to Ordering Code table
Initial document release
26
AT24C16B
5175E–SEEPR–3/09
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5175E–SEEPR–3/09
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