AT24C256N-10SN-2.7 [ATMEL]

EEPROM, 32KX8, Serial, PDSO8;
AT24C256N-10SN-2.7
型号: AT24C256N-10SN-2.7
厂家: ATMEL    ATMEL
描述:

EEPROM, 32KX8, Serial, PDSO8

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 光电二极管
文件: 总17页 (文件大小:289K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Features  
Low-voltage and Standard-voltage Operation  
– 2.7 (VCC = 2.7V to 5.5V)  
Internally Organized 16,384 x 8 and 32,768 x 8  
Two-wire Serial Interface  
Schmitt Trigger, Filtered Inputs for Noise Suppression  
Bidirectional Data Transfer Protocol  
400 kHz Compatibility  
Write Protect Pin for Hardware and Software Data Protection  
64-byte Page Write Mode (Partial Page Writes Allowed)  
Self-timed Write Cycle (5 ms Max)  
High Reliability  
– Data Retention: 40 Years  
Lead-free/Halogen-free Devices Available  
8-lead JEDEC SOIC, 8-lead TSSOP  
Two-wire  
Automotive  
Serial  
Description  
The AT24C128/256 provides 131,072/262,144 bits of serial electrically erasable and  
programmable read only memory (EEPROM) organized as 16,384/32,768 words of 8  
bits each. The device’s cascadable feature allows up to 4 devices to share a common  
Two-wire bus. The device is optimized for use in many automotive applications where  
low power and low voltage operation are essential. The devices are available in space-  
saving 8-lead JEDEC SOIC and 8-lead TSSOP packages. In addition, the entire family  
is available in 2.7V (2.7V to 5.5V) version.  
EEPROMs  
128K (16,384 x 8)  
256K (32,768 x 8)  
AT24C128  
AT24C256  
Table 1. Pin Configuration  
Pin Name  
A0 - A1  
SDA  
Function  
Address Inputs  
Serial Data  
Serial Clock Input  
Write Protect  
No Connect  
Ground  
8-lead TSSOP  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
SCL  
WP  
NC  
SCL  
SDA  
GND  
NC  
GND  
8-lead SOIC  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
NC  
SCL  
SDA  
GND  
Rev. 5121A–SEEPR–9/05  
Absolute Maximum Ratings*  
*NOTICE:  
Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent dam-  
age to the device. This is a stress rating only and  
functional operation of the device at these or any  
other conditions beyond those indicated in the  
operational sections of this specification is not  
implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device  
reliability.  
Operating Temperature..................................–55°C to +125°C  
Storage Temperature.....................................–65°C to +150°C  
Voltage on Any Pin  
with Respect to Ground....................................1.0V to +7.0V  
Maximum Operating Voltage .......................................... 6.25V  
DC Output Current........................................................ 5.0 mA  
Figure 1. Block Diagram  
2
AT24C128/256  
5121A–SEEPR–9/05  
AT24C128/256  
Pin Description  
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each  
EEPROM device and negative edge clock data out of each device.  
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open-  
drain driven and may be wire-ORed with any number of other open-drain or open collector  
devices.  
DEVICE/ADDRESSES (A1, A0): The A1 and A0 pins are device address inputs that are hard-  
wired or left not connected for hardware compatibility with other AT24CXX devices. When the  
pins are hardwired, as many as four 128K/256K devices may be addressed on a single bus  
system (device addressing is discussed in detail under the Device Addressing section). If the  
pins are left floating, the A1 and A0 pins will be internally pulled down to GND if the capacitive  
coupling to the circuit board VCC plane is <3 pF. If coupling is >3 pF, Atmel recommends con-  
necting the address pins to GND.  
WRITE PROTECT (WP): The write protect input, when connected to GND, allows normal write  
operations. When WP is connected high to VCC, all write operations to the memory are inhib-  
ited. If the pin is left floating, the WP pin will be internally pulled down to GND if the capacitive  
coupling to the circuit board VCC plane is <3 pF. If coupling is >3 pF, Atmel recommends con-  
necting the pin to GND.  
Memory  
Organization  
AT24C128/256, 128K/256K SERIAL EEPROM: The 128K/256K is internally organized as  
256/512 pages of 64-bytes each. Random word addressing requires a 14/15-bit data word  
address.  
3
5121A–SEEPR–9/05  
Table 2. Pin Capacitance(1)  
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +2.7V to +5.5V  
Symbol  
CI/O  
Test Condition  
Max  
8
Units  
pF  
Conditions  
VI/O = 0V  
VIN = 0V  
Input/Output Capacitance (SDA)  
Input Capacitance (A0, A1, SCL)  
CIN  
6
pF  
Note:  
1. This parameter is characterized and is not 100% tested.  
Table 3. DC Characteristics  
Applicable over recommended operating range from: TAE = 40°C to +125°C, VCC = +2.7V to +5.5V  
(unless otherwise noted)  
Symbol Parameter  
VCC3 Supply Voltage  
ICC  
Test Condition  
Min  
Typ  
Max  
5.5  
Units  
V
Symbol  
VCC3  
ICC  
2.7  
Supply Current VCC = 5.0V  
Supply Current VCC = 5.0V  
Standby Current VCC = 2.7V  
Standby Current VCC = 5.0V  
Input Leakage Current  
READ at 100 kHz  
WRITE at 100 kHz  
VIN = VCC or VSS  
VIN = VCC or VSS  
VIN = VCC or VSS  
VOUT = VCC or VSS  
0.4  
2.0  
1.0  
mA  
mA  
µA  
µA  
µA  
µA  
V
ICC  
3.0  
ICC  
ISB3  
ISB4  
ILI  
1.6  
4.0  
ISB3  
ISB4  
ILI  
8.0  
18.0  
3.0  
0.10  
0.05  
ILO  
Output Leakage Current  
Input Low Level (1)  
3.0  
ILO  
VIL  
0.6  
VCC x 0.3  
VCC + 0.5  
0.4  
VIL  
VIH  
Input High Level (1)  
VCC x 0.7  
V
VIH  
VOL2  
VOL1  
VOL2  
VOL1  
Note:  
Output Low Level VCC = 3.0V  
Output Low Level VCC = 1.8V  
IOL = 2.1 mA  
V
IOL = 0.15 mA  
0.2  
V
1. VIL min and VIH max are reference only and are not tested.  
4
AT24C128/256  
5121A–SEEPR–9/05  
AT24C128/256  
Table 4. AC Characteristics  
Applicable over recommended operating range from TAE = 40°C to +125°C, VCC = +2.7V to +5.5V, CL = 1 TTL Gate and  
100 pF (unless otherwise noted)  
AT24C128/256  
Symbol  
fSCL  
Parameter  
Min  
Max  
Units  
kHz  
µs  
Clock Frequency, SCL  
Clock Pulse Width Low  
Clock Pulse Width High  
Clock Low to Data Out Valid  
400  
tLOW  
1.2  
0.6  
0.1  
tHIGH  
tAA  
µs  
0.9  
µs  
Time the bus must be free before  
a new transmission can start(1)  
tBUF  
1.2  
µs  
tHD.STA  
tSU.STA  
tHD.DAT  
tSU.DAT  
tR  
Start Hold Time  
0.6  
0.6  
0
µs  
Start Set-up Time  
Data In Hold Time  
Data In Set-up Time  
Inputs Rise Time(1)  
Inputs Fall Time(1)  
Stop Set-up Time  
Data Out Hold Time  
Write Cycle Time  
3.3V, 25°C, Page Mode  
µs  
µs  
100  
ns  
300  
300  
ns  
tF  
ns  
tSU.STO  
tDH  
0.6  
50  
µs  
ns  
tWR  
5
ms  
Endurance(1)  
1M  
Write Cycles  
Note:  
1. This parameter is ensured by characterization only.  
5
5121A–SEEPR–9/05  
Device  
Operation  
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external  
device. Data on the SDA pin may change only during SCL low time periods (see Figure 4 on  
page 7). Data changes during SCL high periods will indicate a start or stop condition as  
defined below.  
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which  
must precede any other command (see Figure 5 on page 8).  
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a  
read sequence, the stop command will place the EEPROM in a standby power mode (see Fig-  
ure 5 on page 8).  
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the  
EEPROM in 8-bit words. The EEPROM sends a zero during the ninth clock cycle to acknowl-  
edge that it has received each word.  
STANDBY MODE: The AT24C128/256 features a low power standby mode which is enabled:  
a) upon power-up and b) after the receipt of the STOP bit and the completion of any internal  
operations.  
MEMORY RESET: After an interruption in protocol, power loss or system reset, any two-wire  
part can be reset by following these steps: (a) Clock up to 9 cycles, (b) look for SDA high in  
each cycle while SCL is high and then (c) create a start condition as SDA is high.  
6
AT24C128/256  
5121A–SEEPR–9/05  
AT24C128/256  
Figure 2. Bus Timing (SCL: Serial Clock, SDA: Serial Data I/O)  
Figure 3. Write Cycle Timing (SCL: Serial Clock, SDA: Serial Data I/O)  
SCL  
SDA  
ACK  
8th BIT  
WORDn  
(1)  
t
wr  
START  
CONDITION  
STOP  
CONDITION  
Note:  
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.  
Figure 4. Data Validity  
7
5121A–SEEPR–9/05  
Figure 5. Start and Stop Definition  
Figure 6. Output Acknowledge  
Device  
Addressing  
The 128K/256K EEPROM requires an 8-bit device address word following a start condition to  
enable the chip for a read or write operation (see Figure 7 on page 10). The device address  
word consists of a mandatory one, zero sequence for the first five most significant bits as  
shown. This is common to all two-wire EEPROM devices.  
The 128K/256K uses the two device address bits A1, A0 to allow as many as four devices on  
the same bus. These bits must compare to their corresponding hardwired input pins. The A1  
and A0 pins use an internal proprietary circuit that biases them to a logic low condition if the  
pins are allowed to float.  
The eighth bit of the device address is the read/write operation select bit. A read operation is  
initiated if this bit is high and a write operation is initiated if this bit is low.  
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not  
made, the device will return to a standby state.  
DATA SECURITY: The AT24C128/256 has a hardware data protection scheme that allows the  
user to write protect the whole memory when the WP pin is at VCC  
.
8
AT24C128/256  
5121A–SEEPR–9/05  
AT24C128/256  
Write  
Operations  
BYTE WRITE: A write operation requires two 8-bit data word addresses following the device  
address word and acknowledgment. Upon receipt of this address, the EEPROM will again  
respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit  
data word, the EEPROM will output a zero. The addressing device, such as a microcontroller,  
then must terminate the write sequence with a stop condition. At this time the EEPROM enters  
an internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during  
this write cycle and the EEPROM will not respond until the write is complete (see Figure 8 on  
page 10).  
PAGE WRITE: The 128K/256K EEPROM is capable of 64-byte page writes.  
A page write is initiated the same way as a byte write, but the microcontroller does not send a  
stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges  
receipt of the first data word, the microcontroller can transmit up to 63 more data words. The  
EEPROM will respond with a zero after each data word received. The microcontroller must ter-  
minate the page write sequence with a stop condition (see Figure 9 on page 11).  
The data word address lower 6 bits are internally incremented following the receipt of each  
data word. The higher data word address bits are not incremented, retaining the memory page  
row location. When the word address, internally generated, reaches the page boundary, the  
following byte is placed at the beginning of the same page. If more than 64 data words are  
transmitted to the EEPROM, the data word address will “roll over” and previous data will be  
overwritten. The address “roll over” during write is from the last byte of the current page to the  
first byte of the same page.  
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the  
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a  
start condition followed by the device address word. The read/write bit is representative of the  
operation desired. Only if the internal write cycle has completed will the EEPROM respond  
with a zero, allowing the read or write sequence to continue.  
9
5121A–SEEPR–9/05  
Read  
Operations  
Read operations are initiated the same way as write operations with the exception that the  
read/write select bit in the device address word is set to one. There are three read operations:  
current address read, random address read and sequential read.  
CURRENT ADDRESS READ: The internal data word address counter maintains the last  
address accessed during the last read or write operation, incremented by one. This address  
stays valid between operations as long as the chip power is maintained. The address “roll  
over” during read is from the last byte of the last memory page, to the first byte of the first  
page.  
Once the device address with the read/write select bit set to one is clocked in and acknowl-  
edged by the EEPROM, the current address data word is serially clocked out. The  
microcontroller does not respond with an input zero but does generate a following stop condi-  
tion (see Figure 10 on page 11).  
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data  
word address. Once the device address word and data word address are clocked in and  
acknowledged by the EEPROM, the microcontroller must generate another start condition.  
The microcontroller now initiates a current address read by sending a device address with the  
read/write select bit high. The EEPROM acknowledges the device address and serially clocks  
out the data word. The microcontroller does not respond with a zero but does generate a fol-  
lowing stop condition (see Figure 11 on page 11).  
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran-  
dom address read. After the microcontroller receives a data word, it responds with an  
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment  
the data word address and serially clock out sequential data words. When the memory  
address limit is reached, the data word address will “roll over” and the sequential read will con-  
tinue. The sequential read operation is terminated when the microcontroller does not respond  
with a zero but does generate a following stop condition (see Figure 12 on page 11).  
Figure 7. Device Address  
Figure 8. Byte Write  
10  
AT24C128/256  
5121A–SEEPR–9/05  
AT24C128/256  
Figure 9. Page Write  
Notes: (* = DON’T CARE bit)  
(† = DON’T CARE bit for the 128K)  
Figure 10. Current Address Read  
Figure 11. Random Read  
Notes: (* = DON’T CARE bit)  
(† = DON’T CARE bit for the 128K)  
Figure 12. Sequential Read  
11  
5121A–SEEPR–9/05  
AT24C128 Ordering Information(1)  
Ordering Code  
Package  
Operation Range  
AT24C128-10TE-2.7  
AT24C128N-10SE-2.7  
8A2  
8S1  
Automotive Temperature  
(–40°C to 125°C)  
Lead-free/Halogen-free/  
Automotive Temperature  
AT24C128-10TQ-2.7(2)  
AT24C128N-10SQ-2.7(2)  
8A2  
8S1  
(–40°C to 125°C)  
Notes: 1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics tables.  
2. “Q” designates Green package + RoHS compliant  
Package Type  
8S1  
8A2  
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)  
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)  
Options  
2.7  
Low-voltage (2.7V to 5.5V)  
12  
AT24C128/256  
5121A–SEEPR–9/05  
AT24C128/256  
AT24C256 Ordering Information(1)  
Ordering Code  
Package  
Operation Range  
AT24C256-10TE-2.7  
AT24C256N-10SE-2.7  
8A2  
8S1  
Automotive Temperature  
(–40°C to 125°C)  
Lead-free/Halogen-free/  
Automotive Temperature  
AT24C256-10TQ-2.7(2)  
AT24C256N-10SQ-2.7(2)  
8A2  
8S1  
(–40°C to 125°C)  
Notes: 1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics tables.  
2. “Q” designates Green Package + RoHS compliant  
Package Type  
8P3  
8S1  
8A2  
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)  
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)  
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)  
Options  
2.7  
Low-voltage (2.7V to 5.5V)  
13  
5121A–SEEPR–9/05  
Packaging Information  
8P3 – PDIP  
E
1
E1  
N
Top View  
c
eA  
End View  
COMMON DIMENSIONS  
(Unit of Measure = inches)  
D
e
MIN  
MAX  
NOM  
NOTE  
SYMBOL  
D1  
A2 A  
A
0.210  
0.195  
0.022  
0.070  
0.045  
0.014  
0.400  
2
A2  
b
0.115  
0.014  
0.045  
0.030  
0.008  
0.355  
0.005  
0.300  
0.240  
0.130  
0.018  
0.060  
0.039  
0.010  
0.365  
5
6
6
b2  
b3  
c
D
3
3
4
3
b2  
L
D1  
E
b3  
4 PLCS  
0.310  
0.250  
0.325  
0.280  
b
E1  
e
0.100 BSC  
0.300 BSC  
0.130  
Side View  
eA  
L
4
2
0.115  
0.150  
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.  
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.  
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.  
4. E and eA measured with the leads constrained to be perpendicular to datum.  
5. Pointed or rounded lead tips are preferred to ease insertion.  
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).  
01/09/02  
TITLE  
DRAWING NO.  
REV.  
2325 Orchard Parkway  
San Jose, CA 95131  
8P3, 8-lead, 0.300" Wide Body, Plastic Dual  
In-line Package (PDIP)  
8P3  
B
R
14  
AT24C128/256  
5121A–SEEPR–9/05  
AT24C128/256  
8S1 – JEDEC SOIC  
C
1
E
E1  
L
N
Top View  
End View  
e
B
COMMON DIMENSIONS  
(Unit of Measure = mm)  
A
MIN  
1.35  
0.10  
MAX  
1.75  
0.25  
NOM  
NOTE  
SYMBOL  
A1  
A
A1  
b
0.31  
0.17  
4.80  
3.81  
5.79  
0.51  
0.25  
5.00  
3.99  
6.20  
C
D
E1  
E
e
D
Side View  
1.27 BSC  
L
0.40  
0˚  
1.27  
8˚  
Note:  
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.  
10/7/03  
REV.  
TITLE  
DRAWING NO.  
1150 E. Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing  
8S1  
B
R
Small Outline (JEDEC SOIC)  
15  
5121A–SEEPR–9/05  
8A2 – TSSOP  
3
2 1  
Pin 1 indicator  
this corner  
E1  
E
L1  
N
L
Top View  
End View  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
MIN  
MAX  
NOM  
3.00  
NOTE  
SYMBOL  
D
2.90  
3.10  
2, 5  
A
b
E
6.40 BSC  
4.40  
E1  
A
4.30  
4.50  
1.20  
1.05  
0.30  
3, 5  
4
A2  
b
0.80  
0.19  
1.00  
e
A2  
D
e
0.65 BSC  
0.60  
L
0.45  
0.75  
Side View  
L1  
1.00 REF  
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,  
datums, etc.  
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed  
0.15 mm (0.006 in) per side.  
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm  
(0.010 in) per side.  
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the  
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between  
protrusion and adjacent lead is 0.07 mm.  
5. Dimension D and E1 to be determined at Datum Plane H.  
5/30/02  
DRAWING NO.  
TITLE  
REV.  
2325 Orchard Parkway  
San Jose, CA 95131  
8A2, 8-lead, 4.4 mm Body, Plastic  
Thin Shrink Small Outline Package (TSSOP)  
B
8A2  
R
16  
AT24C128/256  
5121A–SEEPR–9/05  
Atmel Corporation  
Atmel Operations  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 487-2600  
Memory  
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Postfach 3535  
74025 Heilbronn, Germany  
Tel: (49) 71-31-67-0  
Fax: (49) 71-31-67-2340  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
Regional Headquarters  
Microcontrollers  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
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Colorado Springs, CO 80906, USA  
Tel: 1(719) 576-3300  
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