AT24C64W-10SJ-2.7 [ATMEL]
EEPROM, 8KX8, Serial, CMOS, PDSO8;
| 型号： | AT24C64W-10SJ-2.7 |
| 厂家： | 
ATMEL |
| 描述： | EEPROM, 8KX8, Serial, CMOS, PDSO8 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 光电二极管 |
| 文件： | 总19页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• Low-Voltage and Standard-Voltage Operation
– 2.7 (VCC = 2.7V to 5.5V)
– 1.8 (VCC = 1.8V to 5.5V)
• Low-Power Devices (ISB = 2 µA at 5.5V) Available
• Internally Organized 4096 x 8, 8192 x 8
• 2-Wire Serial Interface
• Schmitt Trigger, Filtered Inputs for Noise Suppression
• Bidirectional Data Transfer Protocol
• 100 kHz (1.8V, 2.5V, 2.7V) and 400 kHz (5V) Clock Rate
• Write Protect Pin for Hardware Data Protection
• 32-Byte Page Write Mode (Partial Page Writes Allowed)
• Self-Timed Write Cycle (10 ms max)
• High Reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
• Automotive Grade and Extended Temperature Devices Available
• 8-Pin JEDEC PDIP, 8-Pin JEDEC SOIC, 8-Pin EIAJ SOIC,
and 8-pin TSSOP Packages
2-Wire
Serial EEPROM
32K (4096 x 8)
64K (8192 x 8)
Description
AT24C32
AT24C64
The AT24C32/64 provides 32,768/65,536 bits of serial electrically erasable and pro-
grammable read only memory (EEPROM) organized as 4096/8192 words of 8 bits
each. The device’s cascadable feature allows up to 8 devices to share a common 2-
wire bus. The device is optimized for use in many industrial and commercial applica-
tions where low power and low voltage operation are essential. The AT24C32/64 is
available in space saving 8-pin JEDEC PDIP, 8-pin JEDEC SOIC, 8-pin EIAJ SOIC,
and 8-pin TSSOP (AT24C64) packages and is accessed via a 2-wire serial interface.
In addition, the entire family is available in 2.7V (2.7V to 5.5V) and 1.8V (1.8V to 5.5V)
versions.
2-Wire, 32K
Serial E2PROM
Pin Configurations
8-Pin TSSOP
Pin Name
A0 - A2
SDA
Function
A0
A1
1
2
3
4
8
7
6
5
VCC
WP
Address Inputs
Serial Data
A2
SCL
SDA
GND
SCL
Serial Clock Input
Write Protect
WP
8-Pin SOIC
8-Pin PDIP
A0
A1
1
2
3
4
8
7
6
5
VCC
WP
A0
A1
1
2
3
4
8
7
6
5
VCC
WP
A2
SCL
SDA
A2
SCL
SDA
GND
GND
Rev. 0336K–SEEPR–7/03
1
Absolute Maximum Ratings*
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Operating Temperature.................................. -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
Voltage on Any Pin
with Respect to Ground .....................................-1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Block Diagram
2
AT24C32/64
0336K–SEEPR–7/03
AT24C32/64
Pin Description
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each
EEPROM device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is
open-drain driven and may be wire-ORed with any number of other open-drain or open
collector devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device address
inputs that are hard wired or left not connected for hardware compatibility with
AT24C16. When the pins are hardwired, as many as eight 32K/64K devices may be
addressed on a single bus system (device addressing is discussed in detail under the
Device Addressing section). When the pins are not hardwired, the default A2, A1, and A0
are zero.
WRITE PROTECT (WP): The write protect input, when tied to GND, allows normal write
operations. When WP is tied high to VCC, all write operations to the upper quandrant
(8/16K bits) of memory are inhibited. If left unconnected, WP is internally pulled down to
GND.
Memory Organization AT24C32/64, 32K/64K SERIAL EEPROM: The 32K/64K is internally organized as 256
pages of 32 bytes each. Random word addressing requires a 12/13 bit data word
address.
3
0336K–SEEPR–7/03
Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V.
Symbol
CI/O
Test Condition
Max
8
Units
pF
Conditions
VI/O = 0V
VIN = 0V
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, A2, SCL)
CIN
6
pF
Note:
1. This parameter is characterized and is not 100% tested.
DC Characteristics
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +1.8V to +5.5V, TAC = 0°C to +70°C,
V
CC = +1.8V to +5.5V (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
1.8
2.5
2.7
4.5
Typ
Max
5.5
5.5
5.5
5.5
1.0
3.0
0.1
2.0
0.5
2.0
0.5
2.0
Units
V
VCC1
VCC2
VCC3
VCC4
ICC1
Supply Voltage
Supply Voltage
Supply Voltage
Supply Voltage
Supply Current
Supply Current
V
V
V
VCC = 5.0V
VCC = 5.0V
READ at 100 kHz
WRITE at 100 kHz
0.4
2.0
mA
mA
µA
ICC2
V
CC = 1.8V
Standby Current
ISB1
ISB2
ISB3
VIN = VCC or VSS
(1.8V option)
VCC = 5.5V
V
V
V
V
CC = 2.5V
CC = 5.5V
CC = 2.7V
CC = 5.5V
µA
µA
Standby Current
(2.5V option)
VIN = VCC or VSS
Standby Current
(2.7V option)
V
IN = VCC or VSS
Standby Current
(5V option)
ISB4
VCC = 4.5 - 5.5V
VIN = VCC or VSS
VOUT = VCC or VSS
VIN = VCC or VSS
20
35
3.0
3.0
µA
µA
µA
Input Leakage
Current
ILI
0.10
0.05
Output Leakage
Current
ILO
VIL
Input Low Level(1)
Input High Level(1)
Output Low Level
Output Low Level
-0.6
VCC x 0.3
VCC + 0.5
0.4
V
V
V
V
VIH
VCC x 0.7
VOL2
VCC = 3.0V
VCC = 1.8V
IOL = 2.1 mA
IOL = 0.15 mA
VOL1
0.2
Note:
1. VIL min and VIH max are reference only and are not tested.
4
AT24C32/64
0336K–SEEPR–7/03
AT24C32/64
AC Characteristics
Applicable over recommended operating range from TA = -40°C to +85°C, VCC = +1.8V to +5.5V, CL = 1 TTL Gate and 100
pF (unless otherwise noted).
1.8-volt
2.7-, 2.5-volt
5.0-volt
Symbol
fSCL
tLOW
tHIGH
tI
Parameter
Min
Max
Min
Max
Min
Max
Units
kHz
µs
Clock Frequency, SCL
Clock Pulse Width Low
Clock Pulse Width High
Noise Suppression Time(1)
Clock Low to Data Out Valid
100
100
400
4.7
4.0
4.7
4.0
1.2
0.6
µs
100
4.5
100
4.5
50
ns
tAA
0.1
4.7
0.1
4.7
0.1
1.2
0.9
µs
Time the bus must be free
tBUF
µs
before a new transmission can start(1)
tHD.STA
tSU.STA
tHD.DAT
tSU.DAT
tR
Start Hold Time
4.0
4.7
0
4.0
4.7
0
0.6
0.6
0
µs
µs
µs
ns
µs
ns
µs
ns
ms
Start Set-up Time
Data In Hold Time
Data In Set-up Time
Inputs Rise Time(1)
Inputs Fall Time(1)
Stop Set-up Time
Data Out Hold Time
Write Cycle Time
200
200
100
1.0
1.0
0.3
tF
300
300
300
tSU.STO
tDH
4.7
4.7
0.6
50
100
100
tWR
20
10
10
Write
Cycles
Endurance(1)
5.0V, 25°C, Page Mode
1M
1M
1M
Note:
1. This parameter is characterized and is not 100% tested.
5
0336K–SEEPR–7/03
Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an exter-
nal device. Data on the SDA pin may change only during SCL low time periods (refer to
Data Validity timing diagram). Data changes during SCL high periods will indicate a start
or stop condition as defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition
which must precede any other command (refer to Start and Stop Definition timing
diagram).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition.
After a read sequence, the stop command will place the EEPROM in a standby power
mode (refer to Start and Stop Definition timing diagram).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a zero during the ninth clock cycle to
acknowledge that it has received each word.
STANDBY MODE: The AT24C32/64 features a low power standby mode which is
enabled: a) upon power-up and b) after the receipt of the STOP bit and the completion
of any internal operations.
MEMORY RESET: After an interruption in protocol, power loss or system reset, any 2-
wire part can be reset by following these steps:
(a) Clock up to 9 cycles, (b) look for SDA high in each cycle while SCL is high and then
(c) create a start condition as SDA is high.
6
AT24C32/64
0336K–SEEPR–7/03
AT24C32/64
Bus Timing
SCL: Serial Clock, SDA: Serial Data I/O
Write Cycle Timing
SCL: Serial Clock, SDA: Serial Data I/O
SCL
SDA
ACK
8th BIT
WORDn
(1)
wr
t
START
STOP
CONDITION
CONDITION
Note:
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
7
0336K–SEEPR–7/03
Data Validity
Start and Stop Definition
Output Acknowledge
8
AT24C32/64
0336K–SEEPR–7/03
AT24C32/64
Device Addressing
The 32K/64K EEPROM requires an 8-bit device address word following a start condition
to enable the chip for a read or write operation (refer to Figure 1). The device address
word consists of a mandatory one, zero sequence for the first four most significant bits
as shown. This is common to all 2-wire EEPROM devices.
The 32K/64K uses the three device address bits A2, A1, A0 to allow as many as eight
devices on the same bus. These bits must compare to their corresponding hardwired
input pins. The A2, A1, and A0 pins use an internal proprietary circuit that biases them
to a logic low condition if the pins are allowed to float.
The eighth bit of the device address is the read/write operation select bit. A read opera-
tion is initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is
not made, the device will return to standby state.
NOISE PROTECTION: Special internal circuitry placed on the SDA and SCL pins pre-
vent small noise spikes from activating the device. A low-VCC detector (5-volt option)
resets the device to prevent data corruption in a noisy environment.
DATA SECURITY: The AT24C32/64 has a hardware data protection scheme that allows
the user to write protect the upper quadrant (8/16K bits) of memory when the WP pin is
at VCC
.
Write Operations
BYTE WRITE: A write operation requires two 8-bit data word addresses following the
device address word and acknowledgment. Upon receipt of this address, the EEPROM
will again respond with a zero and then clock in the first 8-bit data word. Following
receipt of the 8-bit data word, the EEPROM will output a zero and the addressing
device, such as a microcontroller, must terminate the write sequence with a stop condi-
tion. At this time the EEPROM enters an internally-timed write cycle, tWR, to the
nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will
not respond until the write is complete (refer to Figure 2).
PAGE WRITE: The 32K/64K EEPROM is capable of 32-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not
send a stop condition after the first data word is clocked in. Instead, after the EEPROM
acknowledges receipt of the first data word, the microcontroller can transmit up to 31
more data words. The EEPROM will respond with a zero after each data word received.
The microcontroller must terminate the page write sequence with a stop condition (refer
to Figure 3).
The data word address lower 5 bits are internally incremented following the receipt of
each data word. The higher data word address bits are not incremented, retaining the
memory page row location. When the word address, internally generated, reaches the
page boundary, the following byte is placed at the beginning of the same page. If more
than 32 data words are transmitted to the EEPROM, the data word address will “roll
over” and previous data will be overwritten.
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves send-
ing a start condition followed by the device address word. The read/write bit is
representative of the operation desired. Only if the internal write cycle has completed
will the EEPROM respond with a zero, allowing the read or write sequence to continue.
9
0336K–SEEPR–7/03
Read
Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to one. There are three read operations:
current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll
over” during read is from the last byte of the last memory page, to the first byte of the first
page. The address “roll over” during write is from the last byte of the current page to the first
byte of the same page.
Once the device address with the read/write select bit set to one is clocked in and acknowl-
edged by the EEPROM, the current address data word is serially clocked out. The
microcontroller does not respond with an input zero but does generate a following stop condi-
tion (refer to Figure 4).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition.
The microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a zero but does generate a fol-
lowing stop condition (refer to Figure 5).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran-
dom address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory
address limit is reached, the data word address will “roll over” and the sequential read will con-
tinue. The sequential read operation is terminated when the microcontroller does not respond
with a zero but does generate a following stop condition (refer to Figure 6).
10
AT24C32/64
0336K–SEEPR–7/03
AT24C32/64
Figure 1. Device Address
Figure 2. Byte Write
Figure 3. Page Write
Note:
1. * = DON’T CARE bits
2. † = DON’T CARE bits for the 32K
11
0336K–SEEPR–7/03
Figure 4. Current Address Read
Figure 5. Random Read
Note:
1. * = DON’T CARE bits
Figure 6. Sequential Read
12
AT24C32/64
0336K–SEEPR–7/03
AT24C32/64
AT24C32 Ordering Information
Ordering Code
Package
Operation Range
AT24C32-10PI-2.7
AT24C32N-10SI-2.7
AT24C32W-10SI-2.7
8P3
8S1
8S2
Industrial
(-40°C to 85°C)
AT24C32-10PI-1.8
AT24C32N-10SI-1.8
AT24C32W-10SI-1.8
8P3
8S1
8S2
Industrial
(-40°C to 85°C)
Note:
For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics tables.
Package Type
8-lead, 0.300” Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150” Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead, 0.200” Wide, Plastic Gull Wing Small Outline (EIAJ SOIC)
Options
8P3
8S1
8S2
-2.7
-1.8
Low Voltage (2.7V to 5.5V)
Low Voltage (1.8V to 5.5V)
13
0336K–SEEPR–7/03
AT24C64 Ordering Information
Ordering Code
Package
Operation Range
AT24C64-10PI-2.7
AT24C64N-10SI-2.7
AT24C64W-10SI-2.7
AT24C64-10TI-2.7
8P3
8S1
8S2
8A2
Industrial
(-40°C to 85°C)
AT24C64-10PI-1.8
AT24C64N-10SI-1.8
AT24C64W-10SI-1.8
AT24C64-10TI-1.8
8P3
8S1
8S2
8A2
Industrial
(-40°C to 85°C)
Note:
For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics tables.
Package Type
8-lead, 0.300” Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150” Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead, 0.200” Wide, Plastic Gull Wing Small Outline (EIAJ SOIC)
8-lead, 0.170” Wide, Thin Shrink Small Outline Package (TSSOP)
Options
8P3
8S1
8S2
8A2
-2.7
-1.8
Low Voltage (2.7V to 5.5V)
Low Voltage (1.8V to 5.5V)
14
AT24C32/64
0336K–SEEPR–7/03
AT24C32/64
Packaging Information
8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
MIN
MAX
NOM
NOTE
SYMBOL
D1
A2 A
A
0.210
0.195
0.022
0.070
0.045
0.014
0.400
2
A2
b
0.115
0.014
0.045
0.030
0.008
0.355
0.005
0.300
0.240
0.130
0.018
0.060
0.039
0.010
0.365
5
6
6
b2
b3
c
D
3
3
4
3
b2
L
D1
E
b3
4 PLCS
0.310
0.250
0.325
0.280
b
E1
e
0.100 BSC
0.300 BSC
0.130
Side View
eA
L
4
2
0.115
0.150
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
8P3
B
R
15
0336K–SEEPR–7/03
8S1 – JEDEC SOIC
1
3
2
H
N
Top View
e
B
A
D
COMMON DIMENSIONS
(Unit of Measure = mm)
Side View
MIN
–
MAX
1.75
0.51
0.25
5.00
4.00
NOM
NOTE
SYMBOL
A
B
C
D
E
e
–
A2
L
–
–
–
–
–
–
–
–
1.27 BSC
E
H
L
–
–
–
–
6.20
1.27
End View
Note:
This drawing is for general information only. Refer to JEDEC Drawing MS-012 for proper dimensions, tolerances, datums, etc.
10/10/01
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
8S1
A
R
Small Outline (JEDEC SOIC)
16
AT24C32/64
0336K–SEEPR–7/03
AT24C32/64
8S2 – EIAJ SOIC
1
H
N
Top View
e
b
A
D
COMMON DIMENSIONS
(Unit of Measure = mm)
Side View
MIN
1.78
0.05
0.35
0.18
5.13
5.13
7.62
0.51
MAX
2.03
0.33
0.51
0.25
5.38
5.41
8.38
0.89
NOM
NOTE
SYMBOL
A
A1
b
A1
5
5
C
D
E
H
L
L
E
2, 3
4
End View
e
1.27 BSC
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
4. Determines the true geometric position.
5. Values b,C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/-0.005 mm.
5/2/02
TITLE
DRAWING NO.
REV.
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
2325 Orchard Parkway
San Jose, CA 95131
8S2
B
R
17
0336K–SEEPR–7/03
8A2 – TSSOP
3
2 1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
MAX
NOM
3.00
NOTE
SYMBOL
D
2.90
3.10
2, 5
A
b
E
6.40 BSC
4.40
E1
A
4.30
–
4.50
1.20
1.05
0.30
3, 5
4
–
A2
b
0.80
0.19
1.00
e
A2
–
D
e
0.65 BSC
0.60
L
0.45
0.75
Side View
L1
1.00 REF
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
5/30/02
DRAWING NO.
TITLE
REV.
2325 Orchard Parkway
San Jose, CA 95131
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
B
8A2
R
18
AT24C32/64
0336K–SEEPR–7/03
Atmel Corporation
Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Memory
RF/Automotive
2325 Orchard Parkway
San Jose, CA 95131
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
Regional Headquarters
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
Tel: 1(719) 576-3300
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
ASIC/ASSP/Smart Cards
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
Tel: 1(719) 576-3300
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
e-mail
literature@atmel.com
Web Site
http://www.atmel.com
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2003. All rights reserved. Atmel® and combinations thereof, are the registered
trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of
others.
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