AT24CS128-10PC-1.8 [ATMEL]

2-Wire Serial EEPROMs with Permanent Software Write Protect; 2线串行EEPROM与常驻软件写保护
AT24CS128-10PC-1.8
型号: AT24CS128-10PC-1.8
厂家: ATMEL    ATMEL
描述:

2-Wire Serial EEPROMs with Permanent Software Write Protect
2线串行EEPROM与常驻软件写保护

存储 内存集成电路 光电二极管 双倍数据速率 异步传输模式 ATM 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总12页 (文件大小:210K)
中文:  中文翻译
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Features  
One-Time Programmable (OTP) Feature  
Low-Voltage and Standard-Voltage Operation  
– 5.0 (VCC = 4.5V to 5.5V)  
– 2.7 (VCC = 2.7V to 5.5V)  
– 1.8 (VCC = 1.8V to 3.6V)  
Internally Organized 16,384 x 8 and 32,768 x 8  
2-Wire Serial Interface  
Schmitt Trigger, Filtered Inputs for Noise Suppression  
Bidirectional Data Transfer Protocol  
1 MHz (5V), 400 kHz (2.7V) and 100 kHz (1.8V) Compatibility  
Write Protect Pin for Hardware and Software Data Protection  
64-Byte Page Write Mode (Partial Page Writes Allowed)  
Self-Timed Write Cycle (5 ms typical)  
High Reliability  
2-Wire Serial  
EEPROMs  
with Permanent  
Software Write  
Protect  
– Endurance: 100,000 Write Cycles  
– Data Retention: 40 Years  
– ESD Protection: >4000V  
Automotive Grade and Extended Temperature Devices Available  
8-Pin JEDEC PDIP and 8-Pin JEDEC and EIAJ SOIC Packages  
128K (16,384 x 8)  
Description  
The AT24CS128/256 provides 131,072/262,144 bits of serial electrically erasable and  
programmable read only memory (EEPROM) organized as 16,384/32,768 words of 8  
bits each. The device’s cascadable feature allows up to 4 devices to share a common  
2-wire bus. The device also features a one-time programmable 2048 bit array, which  
once enabled, becomes read-only and cannot be overwritten. If not enabled, the OTP  
section will function as part of the normal memory array. The device is optimized for  
use in many industrial and commercial applications where low power and low voltage  
operation are essential. The devices are available in space-saving 8-pin JEDEC PDIP  
(AT24CS128/256), 8-pin EIAJ (AT24CS128/256), 8-pin JEDEC SOIC (AT24CS128)  
packages. In addition, the entire family is available in 5.0V (4.5V to 5.5V), 2.7V (2.7V  
to 5.5V) and 1.8V (1.8V to 3.6V) versions.  
256K (32,768 x 8)  
AT24CS128  
AT24CS256  
with Permanent  
Software Write  
Protect  
Pin Configurations  
8-Pin PDIP  
Pin Name  
A0 to A2  
SDA  
Function  
Advanced  
Information  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
Address Inputs  
Serial Data  
A2  
SCL  
SDA  
GND  
SCL  
Serial Clock Input  
Write Protect  
WP  
8-Pin SOIC  
A0  
A1  
A2  
1
2
3
4
8
VCC  
7
6
5
WP  
SCL  
SDA  
GND  
Rev. 1152A–09/98  
Absolute Maximum Ratings*  
*NOTICE:  
Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent dam-  
age to the device. This is a stress rating only and  
functional operation of the device at these or any  
other conditions beyond those indicated in the  
operational sections of this specification is not  
implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device  
reliability.  
Operating Temperature.................................. -55°C to +125°C  
Storage Temperature..................................... -65°C to +150°C  
Voltage on Any Pin  
with Respect to Ground.....................................-1.0V to +7.0V  
Maximum Operating Voltage........................................... 6.25V  
DC Output Current........................................................ 5.0 mA  
Block Diagram  
A2  
Pin Description  
SERIAL CLOCK (SCL): The SCL input is used to positive  
edge clock data into each EEPROM device and negative  
edge clock data out of each device.  
default A1 and A0 are zero. The A2 device address input is  
a “don’t care” input.  
WRITE PROTECT (WP): The write protect input, when tied  
to GND, allows normal write operations. When WP is tied  
high to VCC, all write operations to the memory are inhib-  
ited. If left unconnected, WP is internally pulled down to  
GND. Switching WP to VCC prior to a write operation cre-  
ates a software write protect function.  
SERIAL DATA (SDA): The SDA pin is bidirectional for  
serial data transfer. This pin is open-drain driven and may  
be wire-ORed with any number of other open-drain or open  
collector devices.  
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A1 and  
A0 pins are device address inputs that are hardwired or left  
not connected for hardware compatibility with AT24C32/64.  
When the pins are hardwired, as many as four 128K/256K  
devices may be addressed on a single bus system (device  
addressing is discussed in detail under the Device  
Addressing section). When the pins are not hardwired, the  
Memory Organization  
AT24CS128/256, 128K/256K SERIAL EEPROM: The  
128K/256K is internally organized as 256/512 pages of 64-  
bytes each. Random word addressing requires a 14/15-bit  
data word address.  
AT24CS128/256  
2
AT24CS128/256  
Pin Capacitance(1)  
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V.  
Symbol  
CI/O  
Test Condition  
Max  
8
Units  
pF  
Conditions  
VI/O = 0V  
VIN = 0V  
Input/Output Capacitance (SDA)  
Input Capacitance (A0, A1, SCL)  
CIN  
6
pF  
Note:  
This parameter is characterized and is not 100% tested.  
DC Characteristics  
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +1.8V to +5.5V, TAC = 0°C to +70°C,  
VCC = +1.8V to +5.5V (unless otherwise noted).  
Symbol Parameter  
Test Condition  
Min  
1.8  
2.7  
4.5  
Typ  
Max  
3.6  
5.5  
5.5  
2.0  
3.0  
0.2  
2.0  
0.5  
5.0  
Units  
V
VCC1  
VCC2  
VCC3  
ICC1  
Supply Voltage  
Supply Voltage  
Supply Voltage  
Supply Current  
Supply Current  
V
V
VCC = 5.0V  
VCC = 5.0V  
VCC = 1.8V  
READ at 400 kHz  
WRITE at 400 kHz  
1.0  
2.0  
mA  
mA  
µA  
ICC2  
Standby Current  
(1.8V option)  
ISB1  
VIN = VCC or VSS  
V
CC = 3.6V  
CC = 2.7V  
V
µA  
Standby Current  
(2.7V option)  
ISB2  
VIN = VCC or VSS  
VIN = VCC or VSS  
VCC = 5.5V  
Standby Current  
(5.0V option)  
ISB3  
VCC = 4.5 - 5.5V  
5.0  
µA  
ILI  
Input Leakage Current  
Output Leakage Current  
Input Low Level(Note:)  
Input High Level(Note:)  
Output Low Level  
VIN = VCC or VSS  
0.10  
0.05  
3.0  
3.0  
µA  
µA  
V
ILO  
VIL  
VIH  
VOL2  
VOUT = VCC or VSS  
-0.6  
VCC x 0.3  
VCC + 0.5  
0.4  
VCC x 0.7  
V
VCC = 3.0V  
VCC = 1.8V  
IOL = 2.1 mA  
IOL = 0.15 mA  
V
VOL1  
Output Low Level  
0.2  
V
Note:  
VIL min and VIH max are reference only and are not tested  
3
AC Characteristics  
Applicable over recommended operating range from TA = -40°C to +85°C, VCC = +1.8V to +5.5V, CL = 100 pF (unless oth-  
erwise noted). Test conditions are listed in Note 2.  
1.8-volt  
2.7-volt  
5.0-volt  
Symbol  
fSCL  
Parameter  
Min  
Max  
Min  
Max  
Min  
Max  
Units  
kHz  
µs  
Clock Frequency, SCL  
Clock Pulse Width Low  
Clock Pulse Width High  
Clock Low to Data Out Valid  
400  
1000  
1000  
tLOW  
1.3  
1.0  
0.1  
0.6  
0.4  
0.6  
0.4  
tHIGH  
tAA  
µs  
0.9  
0.05  
0.55  
0.05  
0.55  
µs  
Time the bus must be free before a new  
transmission can start(1)  
tBUF  
1.2  
0.5  
0.5  
µs  
tHD.STA  
tSU.STA  
tHD.DAT  
tSU.DAT  
tR  
Start Hold Time  
0.6  
0.6  
0
0.25  
0.25  
0
0.25  
0.25  
0
µs  
µs  
µs  
ns  
µs  
ns  
µs  
ns  
ms  
Start Set-up Time  
Data In Hold Time  
Data In Set-up Time  
Inputs Rise Time(1)  
Inputs Fall Time(1)  
Stop Set-up Time  
Data Out Hold Time  
Write Cycle Time  
100  
100  
100  
0.3  
0.3  
0.3  
tF  
300  
100  
100  
tSU.STO  
tDH  
0.6  
50  
0.25  
50  
0.25  
50  
tWR  
20  
10  
10  
Write  
Cycles  
Endurance(1)  
5.0V, 25°C, Page Mode  
100K  
100K  
100K  
Notes: 1. This parameter is characterized and is not 100% tested.  
2. AC measurement conditions:  
RL (connects to VCC): 1.3K(2.7V, 5V), 10K(1.8V)  
Input pulse voltages: 0.3VCC to 0.7VCC  
Input rise and fall times: 50ns  
Input and output timing reference voltages: 0.5VCC  
Device Operation  
CLOCK and DATA TRANSITIONS: The SDA pin is nor-  
mally pulled high with an external device. Data on the SDA  
pin may change only during SCL low time periods (refer to  
Data Validity timing diagram). Data changes during SCL  
high periods will indicate a start or stop condition as defined  
below.  
ACKNOWLEDGE: All addresses and data words are seri-  
ally transmitted to and from the EEPROM in 8-bit words.  
The EEPROM sends a zero during the ninth clock cycle to  
acknowledge that it has received each word.  
STANDBY MODE: The AT24CS128/256 features a low  
power standby mode which is enabled: a) upon power-up  
and b) after the receipt of the STOP bit and the completion  
of any internal operations.  
START CONDITION: A high-to-low transition of SDA with  
SCL high is a start condition which must precede any other  
command (refer to Start and Stop Definition timing dia-  
gram).  
MEMORY RESET: After an interruption in protocol, power  
loss or system reset, any 2-wire part can be reset by follow-  
ing these steps: (a) Clock up to 9 cycles, (b) look for SDA  
high in each cycle while SCL is high and then (c) create a  
start condition as SDA is high.  
STOP CONDITION: A low-to-high transition of SDA with  
SCL high is a stop condition. After a read sequence, the  
stop command will place the EEPROM in a standby power  
mode (refer to Start and Stop Definition timing diagram).  
AT24CS128/256  
4
AT24CS128/256  
Bus Timing (SCL: Serial Clock, SDA: Serial Data I/O)  
Write Cycle Timing (SCL: Serial Clock, SDA: Serial Data I/O)  
SCL  
SDA  
ACK  
8th BIT  
WORD n  
(1)  
tWR  
STOP  
START  
CONDITION  
CONDITION  
Note:  
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write  
cycle.  
5
Data Validity  
Start and Stop Definition  
Output Acknowledge  
AT24CS128/256  
6
AT24CS128/256  
than 64 data words are transmitted to the EEPROM, the  
data word address will “roll over” and previous data will be  
overwritten. The address “roll over” during write is from the  
last byte of the current page to the first byte of the same  
page.  
Device Addressing  
The 128K/256K EEPROM requires an 8-bit device address  
word following a start condition to enable the chip for a read  
or write operation (refer to Figure 1). The device address  
word consists of a mandatory one, zero sequence for the  
first five most significant bits as shown. This is common to  
all 2-wire EEPROM devices.  
ACKNOWLEDGE POLLING: Once the internally-timed  
write cycle has started and the EEPROM inputs are dis-  
abled, acknowledge polling can be initiated. This involves  
sending a start condition followed by the device address  
word. The read/write bit is representative of the operation  
desired. Only if the internal write cycle has completed will  
the EEPROM respond with a zero, allowing the read or  
write sequence to continue.  
The 128K/256K uses the two device address bits A1, A0 to  
allow as many as four devices on the same bus. These bits  
must compare to their corresponding hardwired input pins.  
The A1 and A0 pins use an internal proprietary circuit that  
biases them to a logic low condition if the pins are allowed  
to float.  
The eighth bit of the device address is the read/write opera-  
tion select bit. A read operation is initiated if this bit is high  
and a write operation is initiated if this bit is low.  
OTP Description/Operation  
The OTP feature provides the user with a 2048-bit (256 x 8)  
security section, which once programmed and enabled,  
becomes read-only and data cannot be changed or over-  
written. The OTP section is located in the upper 2K section  
of the memory array in the AT24CS128/256. If not enabled,  
the OTP section will function as part of the normal memory  
array.  
Upon a compare of the device address, the EEPROM will  
output a zero. If a compare is not made, the device will  
return to a standby state.  
DATA SECURITY: The AT24CS128/256 has a hardware  
data protection scheme that allows the user to write protect  
the whole memory when the WP pin is at VCC  
.
To enable the OTP section:  
1. Inputs must be connected:  
Write Operations  
A2 = Don’t Care, A1 and A0 = VCC or GND  
2. Initiate the programming sequence:  
BYTE WRITE: A write operation requires two 8-bit data  
word addresses following the device address word and  
acknowledgment. Upon receipt of this address, the  
EEPROM will again respond with a zero and then clock in  
the first 8-bit data word. Following receipt of the 8-bit data  
word, the EEPROM will output a zero. The addressing  
device, such as a microcontroller, then must terminate the  
write sequence with a stop condition. At this time the  
EEPROM enters an internally-timed write cycle, tWR, to the  
nonvolatile memory. All inputs are disabled during this write  
cycle and the EEPROM will not respond until the write is  
complete (refer to Figure 2).  
START 1010 1100 11xx xxxx xxxx xxxx xxxx xxxx STOP  
Once enabled, previously written data cannot be changed.  
The status of the OTP section can only be confirmed by ini-  
tiating a programming sequence to the OTP section and  
verifying by a read command. The use of the write protect  
(WP) feature can be utilized with or without enabling the  
OTP function.  
Read Operations  
Read operations are initiated the same way as write opera-  
tions with the exception that the read/write select bit in the  
device address word is set to one. There are three read  
operations: current address read, random address read  
and sequential read.  
PAGE WRITE: The 128K/256K EEPROM is capable of 64-  
byte page writes.  
A page write is initiated the same way as a byte write, but  
the microcontroller does not send a stop condition after the  
first data word is clocked in. Instead, after the EEPROM  
acknowledges receipt of the first data word, the microcon-  
troller can transmit up to 63 more data words. The  
EEPROM will respond with a zero after each data word  
received. The microcontroller must terminate the page  
write sequence with a stop condition (refer to Figure 3).  
CURRENT ADDRESS READ: The internal data word  
address counter maintains the last address accessed dur-  
ing the last read or write operation, incremented by one.  
This address stays valid between operations as long as the  
chip power is maintained. The address “roll over” during  
read is from the last byte of the last memory page, to the  
first byte of the first page.  
The data word address lower 6 bits are internally incre-  
mented following the receipt of each data word. The higher  
data word address bits are not incremented, retaining the  
memory page row location. When the word address, inter-  
nally generated, reaches the page boundary, the following  
byte is placed at the beginning of the same page. If more  
Once the device address with the read/write select bit set  
to one is clocked in and acknowledged by the EEPROM,  
the current address data word is serially clocked out. The  
microcontroller does not respond with an input zero but  
does generate a following stop condition (refer to Figure 4).  
7
RANDOM READ: A random read requires a “dummy” byte  
write sequence to load in the data word address. Once the  
device address word and data word address are clocked in  
and acknowledged by the EEPROM, the microcontroller  
must generate another start condition. The microcontroller  
now initiates a current address read by sending a device  
address with the read/write select bit high. The EEPROM  
acknowledges the device address and serially clocks out  
the data word. The microcontroller does not respond with a  
zero but does generate a following stop condition (refer to  
Figure 5).  
SEQUENTIAL READ: Sequential reads are initiated by  
either a current address read or a random address read.  
After the microcontroller receives a data word, it responds  
with an acknowledge. As long as the EEPROM receives an  
acknowledge, it will continue to increment the data word  
address and serially clock out sequential data words. When  
the memory address limit is reached, the data word  
address will “roll over” and the sequential read will con-  
tinue. The sequential read operation is terminated when  
the microcontroller does not respond with a zero but does  
generate a following stop condition (refer to Figure 6).  
Figure 1. Device Address  
Figure 2. Byte Write  
Figure 3. Page Write  
(* = DON’T CARE bit)  
(† = DON’T CARE bit for the 128K)  
AT24CS128/256  
8
AT24CS128/256  
Figure 4. Current Address Read  
Figure 5. Random Read  
(* = DON’T CARE bit)  
(† = DON’T CARE bit for the 128K)  
Figure 6. Sequential Read  
9
AT24CS128 Ordering Information  
tWR (max)  
(ms)  
ICC (max)  
ISB (max)  
fMAX  
(kHz)  
(µA)  
(µA)  
Ordering Code  
Package  
Operation Range  
10  
10  
20  
3000  
3000  
1500  
1500  
800  
5.0  
5.0  
0.5  
0.5  
0.2  
0.2  
1000  
1000  
400  
AT24CS128-10PC  
AT24CS128N-10SC  
AT24CS128W-10SC  
8P3  
8S1  
8S2  
Commercial  
(0°C to 70°C)  
AT24CS128-10PI  
AT24CS128N-10SI  
AT24CS128W-10SI  
8P3  
8S1  
8S2  
Industrial  
(-40°C to 85°C)  
AT24CS128-10PC-2.7  
AT24CS128N-10SC-2.7  
AT24CS128W-10SC-2.7  
8P3  
8S1  
8S2  
Commercial  
(0°C to 70°C)  
400  
AT24CS128-10PI-2.7  
AT24CS128N-10SI-2.7  
AT24CS128W-10SI-2.7  
8P3  
8S1  
8S2  
Industrial  
(-40°C to 85°C)  
100  
AT24CS128-10PC-1.8  
AT24CS128N-10SC-1.8  
AT24CS128W-10SC-1.8  
8P3  
8S1  
8S2  
Commercial  
(0°C to 70°C)  
800  
100  
AT24CS128-10PI-1.8  
AT24CS128N-10SI-1.8  
AT24CS128W-10SI-1.8  
8P3  
8S1  
8S2  
Industrial  
(-40°C to 85°C)  
Package Type  
8P3  
8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)  
8-Lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)  
8-Lead, 0.200" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC)  
Options  
8S1  
8S2  
Blank  
-2.7  
Standard Operation (4.5V to 5.5V)  
Low-Voltage (2.7V to 5.5V)  
-1.8  
Low-Voltage (1.8V to 3.6V)  
AT24CS128/256  
10  
AT24CS128/256  
AT24CS256 Ordering Information  
tWR (max)  
(ms)  
ICC (max)  
ISB (max)  
fMAX  
(kHz)  
(µA)  
(µA)  
Ordering Code  
Package  
Operation Range  
10  
10  
20  
3000  
3000  
1500  
1500  
800  
5.0  
5.0  
0.5  
0.5  
0.2  
0.2  
1000  
1000  
400  
AT24CS256-10PC  
8P3  
8S2  
Commercial  
AT24CS256W-10SC  
(0°C to 70°C)  
AT24CS256-10PI  
8P3  
8S2  
Industrial  
AT24CS256W-10SI  
(-40°C to 85°C)  
AT24CS256-10PC-2.7  
AT24CS256W-10SC-2.7  
8P3  
8S2  
Commercial  
(0°C to 70°C)  
400  
AT24CS256-10PI-2.7  
AT24CS256W-10SI-2.7  
8P3  
8S2  
Industrial  
(-40°C to 85°C)  
100  
AT24CS256-10PC-1.8  
AT24CS256W-10SC-1.8  
8P3  
8S2  
Commercial  
(0°C to 70°C)  
800  
100  
AT24CS256-10PI-1.8  
AT24CS256W-10SI-1.8  
8P3  
8S2  
Industrial  
(-40°C to 85°C)  
Package Type  
8P3  
8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)  
8-Lead, 0.200" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC)  
Options  
8S2  
Blank  
-2.7  
Standard Operation (4.5V to 5.5V)  
Low-Voltage (2.7V to 5.5V)  
-1.8  
Low-Voltage (1.8V to 3.6V)  
11  
AT24CS128/256  
Packaging Information  
8P3, 8-Lead, 0.300" Wide,  
8S1, 8-Lead, 0.150" Wide,  
Plastic Dual Inline Package (PDIP)  
Dimensions in Inches and (Millimeters)  
JEDEC STANDARD MS-001 BA  
Plastic Gull Wing Small Outline (JEDEC SOIC)  
Dimensions in Inches and (Millimeters)  
.400 (10.16)  
.355 (9.02)  
.020 (.508)  
.013 (.330)  
PIN  
1
.244 (6.20)  
.228 (5.79)  
.157 (3.99)  
.150 (3.81)  
.280 (7.11)  
.240 (6.10)  
PIN 1  
.037 (.940)  
.027 (.690)  
.300 (7.62) REF  
.210 (5.33) MAX  
.050 (1.27) BSC  
.100 (2.54) BSC  
.196 (4.98)  
.189 (4.80)  
SEATING  
PLANE  
.068 (1.73)  
.015 (.380) MIN  
.053 (1.35)  
.150 (3.81)  
.115 (2.92)  
.022 (.559)  
.014 (.356)  
.070 (1.78)  
.045 (1.14)  
.010 (.254)  
.004 (.102)  
.325 (8.26)  
.300 (7.62)  
0
8
REF  
.010 (.254)  
.007 (.203)  
0
REF  
15  
.012 (.305)  
.008 (.203)  
.050 (1.27)  
.016 (.406)  
.430 (10.9) MAX  
8S2, 8-Lead, 0.200" Wide,  
Plastic Gull Wing Small Outline (EIAJ SOIC)  
Dimensions in Inches and (Millimeters)  
.020 (.508)  
.012 (.305)  
.213 (5.41) .330 (8.38)  
.205 (5.21) .300 (7.62)  
PIN 1  
.050 (1.27) BSC  
.212 (5.38)  
.203 (5.16)  
.080 (2.03)  
.070 (1.78)  
.013 (.330)  
.004 (.102)  
0
8
REF  
.010 (.254)  
.007 (.178)  
.035 (.889)  
.020 (.508)  
12  

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