AT28BV16-30SI [ATMEL]
16K 2K x 8 Battery-Voltage CMOS E2PROM; 16K 2K ×8的电池电压CMOS E2PROM
| 型号： | AT28BV16-30SI |
| 厂家： | 
ATMEL |
| 描述： | 16K 2K x 8 Battery-Voltage CMOS E2PROM |
| 文件： | 总8页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AT28BV16
Features
2.7 to 3.6V Supply
•
Full Read and Write Operation
Low Power Dissipation
•
8 mA Active Current
50 µA CMOS Standby Current
Read Access Time - 250 ns
Byte Write - 3 ms
Direct Microprocessor Control
DATA Polling
•
•
•
READ/BUSY Open Drain Output on TSOP
High Reliability CMOS Technology
Endurance: 100,000 Cycles
16K (2K x 8)
Battery-Voltage
CMOS
•
Data Retention: 10 Years
Low Voltage CMOS Compatible Inputs and Outputs
JEDEC Approved Byte Wide Pinout
Commercial and Industrial Temperature Ranges
•
•
•
E2PROM
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28BV16 is a 16K mem-
ory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s
reliable nonvolatile CMOS technology.
The AT28BV16 is accessed like a static RAM for the read or write cycles without the
need of external components. During a byte write, the address and data are latched
(continued)
Pin Configurations
Pin Name
A0 - A10
CE
Function
TSOP
Top View
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
AT28BV16
OE
WE
I/O0 - I/O7
NC
DC
Don’t Connect
PLCC
Top View
PDIP, SOIC
Top View
0308A
2-119
Description (Continued)
internally, freeing the microprocessor address and data
bus for other operations. Following the initiation of a write
cycle, the device will go to a busy state and automatically
clear and write the latched data using an internal control
timer. The end of a write cycle can be determined by
The CMOS technology offers fast access times of 250 ns
at low power dissipation. When the chip is deselected the
standby current is less than 50 µA.
Atmel’s 28BV16 has additional features to ensure high
quality and manufacturability. The device utilizes error cor-
rection internally for extended endurance and for im-
proved data retention characteristics. An extra 32-bytes of
DATA polling of I/O Once the end of a write cycle has
7.
been detected, a new access for a read or a write can
begin.
2
E PROM are available for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Temperature Under Bias................. -55°C to +125°C
Storage Temperature...................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to V + 0.6V
CC
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
2-120
AT28BV16
AT28BV16
Device Operation
READ: The AT28BV16 is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in a high im-
pedance state whenever CE or OE is high. This dual line
control gives designers increased flexibility in preventing
bus contention.
READY/BUSY (TSOP only): READY/BUSY is an open
drain output; it is pulled low during the internal write cycle
and released at the completion of the write cycle.
WRITE PROTECTION: Inadvertent writes to the device
are protected against in the following ways. (a) Vcc
sense— if Vcc is below 2.0V (typical) the write function is
inhibited. (b) Vcc power on delay— once Vcc has reached
2.0V the device will automatically time out 5 ms (typical)
before allowing a byte write. (c) Write Inhibit— holding any
one of OE low, CE high or WE high inhibits byte write cy-
cles.
BYTE WRITE: Writing data into the AT28BV16 is similar
to writing into a Static RAM. A low pulse on the WE or CE
input with OE high and CE or WE low (respectively) initi-
ates a byte write. The address location is latched on the
last falling edge of WE (or CE); the new data is latched on
the first rising edge. Internally, the device performs a self-
clear before write. Once a byte write has been started, it
will automatically time itself to completion. Once a pro-
gramming operation has been initiated and for the dura-
DEVICE IDENTIFICATION: An extra 32-bytes of
2
E PROM memory are available to the user for device
identification. By raising A9 to 12 ± 0.5V and using ad-
dress locations 7E0H to 7FFH the additional bytes may be
written to or read from in the same manner as the regular
memory array.
tion of t , a read operation will effectively be a polling
WC
operation.
DATA POLLING: The AT28BV16 provides DATA
POLLING to signal the completion of a write cycle. During
a write cycle, an attempted read of the data being written
results in the complement of that data for I/O (the other
7
outputs are indeterminate). When the write cycle is fin-
ished, true data appears on all outputs.
2-121
DC and AC Operating Range
AT28BV16-25
0°C - 70°C
AT28BV16-30
0°C - 70°C
Com.
Ind.
Operating
Temperature (Case)
-40°C - 85°C
2.7V to 3.6V
-40°C - 85°C
2.7V to 3.6V
V
Power Supply
CC
Operating Modes
Mode
CE
OE
WE
I/O
Read
V
V
V
V
D
D
IL
IL
IH
IL
IH
OUT
IN
(2)
Write
V
V
IH
IL
(1)
Standby/Write Inhibit
Write Inhibit
V
X
X
High Z
X
X
V
IH
Write Inhibit
X
X
V
X
IL
Output Disable
V
X
High Z
IH
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
DC Characteristics
Symbol
Parameter
Condition
Min
Max Units
I
I
I
I
Input Load Current
Output Leakage Current
V
V
= 0V to V + 1.0V
5
µA
µA
µA
mA
V
LI
IN
CC
= 0V to V
CC
5
50
8
LO
SB
CC
I/O
V
V
Standby Current CMOS
Active Current AC
CE = V - 0.3V to V + 1.0V
CC CC
CC
CC
f = 5 MHz; I
= 0 mA; CE = V
OUT
IL
V
V
Input Low Voltage
Input High Voltage
0.6
IL
2.0
2.0
V
IH
I
I
I
= 1 mA
0.3
0.3
V
OL
OL
OH
V
V
Output Low Voltage
Output High Voltage
OL
= 2 mA for RDY/BUSY
V
= -100 µA
V
OH
2-122
AT28BV16
AT28BV16
AC Read Characteristics
AT28BV16-25
AT28BV16-30
Min
Max
Min
Max
300
300
100
55
Symbol
Parameter
Units
ns
t
t
t
t
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE High to Output Float
250
250
100
55
ACC
(1)
ns
CE
OE
DF
(2)
ns
(3, 4)
0
0
0
0
ns
Output Hold from OE, CE or
Address, whichever occurred first
t
ns
OH
AC Read Waveforms (1, 2, 3, 4)
Notes: 1. CE may be delayed up to tACC - tCE after the address
3. tDF is specified from OE or CE whichever occurs first
(CL = 5 pF).
transition without impact on tACC
.
2. OE may be delayed up to tCE - tOE after the falling
edge of CE without impact on tCE or by tACC - tOE
4. This parameter is characterized and is not 100% tested.
after an address change without impact on tACC
.
Input Test Waveforms and
Measurement Level
Output Test Load
t , t < 20 ns
R
F
Pin Capacitance (f = 1 MHz, T = 25°C) (1)
Typ
Max
6
Units
pF
Conditions
C
C
4
8
V
V
= 0V
IN
IN
12
pF
= 0V
OUT
OUT
Note: 1. This parameter is characterized and is not 100% tested.
2-123
AC Write Characteristics
Symbol
Parameter
Min
10
Max
Units
ns
t
t
t
t
t
t
t
t
, t
Address, OE Set-up Time
Address Hold Time
AS OES
100
150
100
10
ns
AH
WP
DS
Write Pulse Width (WE or CE)
Data Set-up Time
1000
ns
ns
, t
Data, OE Hold Time
ns
DH OEH
, t
CS CH
CE to WE and WE to CE Set-up and Hold Time
Write Cycle Time
0
ns
3.0
50
ms
ns
WC
DB
Time to Device Busy
AC Write Waveforms
WE Controlled
CE Controlled
2-124
AT28BV16
AT28BV16
Data Polling Characteristics (1)
Symbol
Parameter
Min
10
Typ
Max
Units
ns
t
t
t
t
Data Hold Time
OE Hold Time
OE to Output Delay
DH
10
ns
OEH
OE
(2)
ns
Write Recovery Time
0
ns
WR
Notes: 1. These parameters are characterized and not 100% tested.
2. See AC Characteristics.
Data Polling Waveforms
2-125
Ordering Information (1)
t
I
(mA)
ACC
CC
Ordering Code
Package
Operation Range
Active Standby
(ns)
250
8
8
8
8
0.05
0.05
0.05
0.05
AT28BV16-25TC
AT28BV16-25JC
AT28BV16-25PC
AT28BV16-25SC
28T
32J
24P6
24S
Commercial
(0°C to 70°C)
AT28BV16-25TI
AT28BV16-25JI
AT28BV16-25PI
AT28BV16-25SI
28T
32J
24P6
24S
Industrial
(-40°C to 85°C)
300
AT28BV16-30TC
AT28BV16-30JC
AT28BV16-30PC
AT28BV16-30SC
28T
32J
24P6
24S
Commercial
(0°C to 70°C)
AT28BV16-30TI
AT28BV16-30JI
AT28BV16-30PI
AT28BV16-30SI
28T
32J
24P6
24S
Industrial
(-40°C to 85°C)
Note: 1. See Valid Part Number table below.
Valid Part Numbers
The following table lists standard Atmel products that can be ordered.
Device Numbers
AT28BV16
Speed
Package and Temperature Combinations
JC, JI, PC, PI, SC, SI, TC, TI
25
30
AT28BV16
JC, JI, PC, PI, SC, SI, TC, TI
Package Type
28T
32J
28 Lead, Plastic Thin Small Outline Package (TSOP)
32 Lead, Plastic J-Leaded Chip Carrier (PLCC)
24P6
24S
24 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
24 Lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
2-126
AT28BV16
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