AT45DB011D-MH-T [ATMEL]
1-megabit 2.7-volt Minimum DataFlash; 1兆位2.7伏的最小数据闪存
| 型号： | AT45DB011D-MH-T |
| 厂家： | 
ATMEL |
| 描述： | 1-megabit 2.7-volt Minimum DataFlash |
| 文件： | 总52页 (文件大小：1675K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• Single 2.7V to 3.6V Supply
• RapidS Serial Interface: 66 MHz Maximum Clock Frequency
– SPI Compatible Modes 0 and 3
• User Configurable Page Size
– 256 Bytes per Page
– 264 Bytes per Page
– Page Size Can Be Factory Pre-configured for 256 Bytes
• Page Program Operation
– Intelligent Programming Operation
– 512 Pages (256/264 Bytes/Page) Main Memory
• Flexible Erase Options
1-megabit
2.7-volt
– Page Erase (256 Bytes)
Minimum
DataFlash®
– Block Erase (2 Kbytes)
– Sector Erase (32 Kbytes)
– Chip Erase (1 Mbits)
• One SRAM Data Buffer (256/264 Bytes)
• Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
• Low-power Dissipation
AT45DB011D
– 7 mA Active Read Current Typical
– 25 µA Standby Current Typical
– 15 µA Deep Power-down Typical
• Hardware and Software Data Protection Features
– Individual Sector
• Sector Lockdown for Secure Code and Data Storage
– Individual Sector
• Security: 128-byte Security Register
– 64-byte User Programmable Space
– Unique 64-byte Device Identifier
• JEDEC Standard Manufacturer and Device ID Read
• 100,000 Program/Erase Cycles Per Page Minimum
• Data Retention – 20 Years
• Industrial Temperature Range
• Green (Pb/Halide-free/RoHS Compliant) Packaging Options
1. Description
The AT45DB011D is a 2.7V, serial-interface Flash memory ideally suited for a wide
variety of digital voice-, image-, program code- and data-storage applications. The
AT45DB011D supports RapidS serial interface for applications requiring very high
speed operations. RapidS serial interface is SPI compatible for frequencies up to 66
MHz. Its 1,081,344 bits of memory are organized as 512 pages of 256 bytes or 264
bytes each. In addition to the main memory, the AT45DB011D also contains one
SRAM buffer of 256/264 bytes. EEPROM emulation (bit or byte alterability) is easily
handled with a self-contained three step read-modify-write operation. Unlike conven-
tional Flash memories that are accessed randomly with multiple address lines and a
parallel interface, the DataFlash® uses a RapidS serial interface to sequentially
access its data. The simple sequential access dramatically reduces active pin count,
facilitates hardware layout, increases system reliability, minimizes switching noise,
and reduces package size.
3639H–DFLASH–04/09
The device is optimized for use in many commercial and industrial applications where high-den-
sity, low-pin count, low-voltage and low-power are essential.
To allow for simple in-system reprogrammability, the AT45DB011D does not require high input
voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for
both the program and read operations. The AT45DB011D is enabled through the chip select pin
(CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output
(SO), and the Serial Clock (SCK).
All programming and erase cycles are self-timed.
2. Pin Configurations and Pinouts
Table 2-1.
Pin Configurations
Asserted
State
Symbol
Name and Function
Type
Chip Select: Asserting the CS pin selects the device. When the CS pin is deasserted, the device will be deselected
and normally be placed in the standby mode (not Deep Power-Down mode), and the output pin (SO) will be in a
high-impedance state. When the device is deselected, data will not be accepted on the input pin (SI).
CS
Low
Input
A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition is required to
end an operation. When ending an internally self-timed operation such as a program or erase cycle, the device
will not enter the standby mode until the completion of the operation.
Serial Clock: This pin is used to provide a clock to the device and is used to control the flow of data to and from
the device. Command, address, and input data present on the SI pin is always latched on the rising edge of SCK,
while output data on the SO pin is always clocked out on the falling edge of SCK.
SCK
–
Input
Serial Input: The SI pin is used to shift data into the device. The SI pin is used for all data input including
command and address sequences. Data on the SI pin is always latched on the rising edge of SCK.
SI
–
–
Input
Serial Output: The SO pin is used to shift data out from the device. Data on the SO pin is always clocked out on
the falling edge of SCK.
SO
Output
Write Protect: When the WP pin is asserted, all sectors specified for protection by the Sector Protection Register
will be protected against program and erase operations regardless of whether the Enable Sector Protection
command has been issued or not. The WP pin functions independently of the software controlled protection method.
After the WP pin goes low, the content of the Sector Protection Register cannot be modified.
If a program or erase command is issued to the device while the WP pin is asserted, the device will simply ignore
the command and perform no operation. The device will return to the idle state once the CS pin has been
deasserted. The Enable Sector Protection command and Sector Lockdown command, however, will be
recognized by the device when the WP pin is asserted.
WP
Low
Input
The WP pin is internally pulled-high and may be left floating if hardware controlled protection will not be used.
However, it is recommended that the WP pin also be externally connected to VCC whenever possible.
Reset: A low state on the reset pin (RESET) will terminate the operation in progress and reset the internal state
machine to an idle state. The device will remain in the reset condition as long as a low level is present on the RESET
pin. Normal operation can resume once the RESET pin is brought back to a high level.
RESET
Low
Input
The device incorporates an internal power-on reset circuit, so there are no restrictions on the RESET pin during
power-on sequences. If this pin and feature are not utilized it is recommended that the RESET pin be driven high
externally.
Device Power Supply: The VCC pin is used to supply the source voltage to the device.
VCC
–
–
Power
Operations at invalid VCC voltages may produce spurious results and should not be attempted.
GND
Ground: The ground reference for the power supply. GND should be connected to the system ground.
Ground
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AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
Figure 2-1. SOIC Top View
Figure 2-2. UDFN Top View(1)
SI
SCK
1
2
3
4
8
7
6
5
SO
SI
SCK
1
2
3
4
8
7
6
5
SO
GND
VCC
WP
GND
VCC
WP
RESET
CS
RESET
CS
Note:
1. The metal pad on the bottom of the UDFN package is floating. This pad can be a “No Connect” or connected to GND.
3. Block Diagram
WP
FLASH MEMORY ARRAY
PAGE (256/264 BYTES)
BUFFER (256/264 BYTES)
SCK
CS
I/O INTERFACE
RESET
VCC
GND
SI
SO
3
3639H–DFLASH–04/09
4. Memory Array
To provide optimal flexibility, the memory array of the AT45DB011D is divided into three levels of
granularity comprising of sectors, blocks, and pages. The “Memory Architecture Diagram” illus-
trates the breakdown of each level and details the number of pages per sector and block. All
program operations to the DataFlash occur on a page-by-page basis. The erase operations can
be performed at the chip, sector, block or page level.
Figure 4-1. Memory Architecture Diagram
SECTOR ARCHITECTURE
BLOCK ARCHITECTURE
PAGE ARCHITECTURE
BLOCK 0
BLOCK 1
BLOCK 2
8 Pages
PAGE 0
PAGE 1
SECTOR 0a
SECTOR 0a = 8 Pages
2,048/2,112 bytes
PAGE 6
PAGE 7
PAGE 8
PAGE 9
SECTOR 0b = 120 Pages
31,744/32,726 bytes
BLOCK 14
BLOCK 15
BLOCK 16
BLOCK 17
SECTOR 1 = 128 Pages
32,768/33,792 bytes
PAGE 14
PAGE 15
PAGE 16
PAGE 17
PAGE 18
BLOCK 30
BLOCK 31
BLOCK 32
BLOCK 33
SECTOR 2 = 128 Pages
32,768/33,792 bytes
SECTOR 3 = 128 Pages
32,768/33,792 bytes
BLOCK 62
BLOCK 63
PAGE 510
PAGE 511
Block = 2,048/2,112 bytes
Page = 256/264 bytes
5. Device Operation
The device operation is controlled by instructions from the host processor. The list of instructions
and their associated opcodes are contained in Tables 15-1 through 15-7. A valid instruction
starts with the falling edge of CS followed by the appropriate 8-bit opcode and the desired buffer
or main memory address location. While the CS pin is low, toggling the SCK pin controls the
loading of the opcode and the desired buffer or main memory address location through the SI
(serial input) pin. All instructions, addresses, and data are transferred with the most significant
bit (MSB) first.
Buffer addressing for the DataFlash standard page size (264 bytes) is referenced in the
datasheet using the terminology BFA8 - BFA0 to denote the 9 address bits required to designate
a byte address within a buffer. Main memory addressing is referenced using the terminology
PA8 - PA0 and BA8 - BA0, where PA8 - PA0 denotes the 9 address bits required to designate a
page address and BA8 - BA0 denotes the 9 address bits required to designate a byte address
within the page.
For the “Power of 2” binary page size (256 bytes), the Buffer addressing is referenced in the
datasheet using the conventional terminology BFA7 - BFA0 to denote the 8 address bits
required to designate a byte address within a buffer. Main memory addressing is referenced
using the terminology A16 - A0, where A16 - A8 denotes the 9 address bits required to desig-
nate a page address and A7 - A0 denotes the 8 address bits required to designate a byte
address within a page.
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AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
6. Read Commands
By specifying the appropriate opcode, data can be read from the main memory or from the
SRAM data buffer. The DataFlash supports RapidS protocols for Mode 0 and Mode 3. Please
refer to the “Detailed Bit-level Read Timing” diagrams in this datasheet for details on the clock
cycle sequences for each mode.
6.1
Continuous Array Read (Legacy Command – E8H): Up to 66 MHz
By supplying an initial starting address for the main memory array, the Continuous Array Read
command can be utilized to sequentially read a continuous stream of data from the device by
simply providing a clock signal; no additional addressing information or control signals need to
be provided. The DataFlash incorporates an internal address counter that will automatically
increment on every clock cycle, allowing one continuous read operation without the need of
additional address sequences. To perform a continuous read from the DataFlash standard page
size (264 bytes), an opcode of E8H must be clocked into the device followed by three address
bytes (which comprise the 24-bit page and byte address sequence) and 4 don’t care bytes. The
first 9 bits (PA8 - PA0) of the 18-bit address sequence specify which page of the main memory
array to read, and the last 9 bits (BA8 - BA0) of the 18-bit address sequence specify the starting
byte address within the page. To perform a continuous read from the binary page size (256
bytes), the opcode (E8H) must be clocked into the device followed by three address bytes and 4
don’t care bytes. The first 9 bits (A16 - A8) of the 17-bits sequence specify which page of the
main memory array to read, and the last 8 bits (A7 - A0) of the 18-bits address sequence specify
the starting byte address within the page. The don’t care bytes that follow the address bytes are
needed to initialize the read operation. Following the don’t care bytes, additional clock pulses on
the SCK pin will result in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, the don’t care
bytes, and the reading of data. When the end of a page in main memory is reached during a
Continuous Array Read, the device will continue reading at the beginning of the next page with
no delays incurred during the page boundary crossover (the crossover from the end of one page
to the beginning of the next page). When the last bit in the main memory array has been read,
the device will continue reading back at the beginning of the first page of memory. As with cross-
ing over page boundaries, no delays will be incurred when wrapping around from the end of the
array to the beginning of the array.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output
pin (SO). The maximum SCK frequency allowable for the Continuous Array Read is defined by
the fCAR1 specification. The Continuous Array Read bypasses the data buffer and leaves the
contents of the buffer unchanged.
6.2
Continuous Array Read (High Frequency Mode – 0BH): Up to 66 MHz
This command can be used with the serial interface to read the main memory array sequentially
in high speed mode for any clock frequency up to the maximum specified by fCAR1. To perform a
continuous read array with the page size set to 264 bytes, the CS must first be asserted then an
opcode 0BH must be clocked into the device followed by three address bytes and a dummy
byte. The first 9 bits (PA8 - PA0) of the 18-bit address sequence specify which page of the main
memory array to read, and the last 9 bits (BA8 - BA0) of the 18-bit address sequence specify the
starting byte address within the page. To perform a continuous read with the page size set to
256 bytes, the opcode, 0BH, must be clocked into the device followed by three address bytes
(A16 - A0) and a dummy byte. Following the dummy byte, additional clock pulses on the SCK
pin will result in data being output on the SO (serial output) pin.
5
3639H–DFLASH–04/09
The CS pin must remain low during the loading of the opcode, the address bytes, and the read-
ing of data. When the end of a page in the main memory is reached during a Continuous Array
Read, the device will continue reading at the beginning of the next page with no delays incurred
during the page boundary crossover (the crossover from the end of one page to the beginning of
the next page). When the last bit in the main memory array has been read, the device will con-
tinue reading back at the beginning of the first page of memory. As with crossing over page
boundaries, no delays will be incurred when wrapping around from the end of the array to the
beginning of the array. A low-to-high transition on the CS pin will terminate the read operation
and tri-state the output pin (SO). The maximum SCK frequency allowable for the Continuous
Array Read is defined by the fCAR1 specification. The Continuous Array Read bypasses the data
buffer and leaves the contents of the buffer unchanged.
6.3
Continuous Array Read (Low Frequency Mode: 03H): Up to 33 MHz
This command can be used with the serial interface to read the main memory array sequentially
without a dummy byte up to maximum frequencies specified by fCAR2. To perform a continuous
read array with the page size set to 264 bytes, the CS must first be asserted then an opcode,
03H, must be clocked into the device followed by three address bytes (which comprise the 24-bit
page and byte address sequence). The first 9 bits (PA8 - PA0) of the 18-bit address sequence
specify which page of the main memory array to read, and the last 9 bits (BA8 - BA0) of the
18-bit address sequence specify the starting byte address within the page. To perform a contin-
uous read with the page size set to 256 bytes, the opcode, 03H, must be clocked into the device
followed by three address bytes (A16 - A0). Following the address bytes, additional clock pulses
on the SCK pin will result in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, and the read-
ing of data. When the end of a page in the main memory is reached during a Continuous Array
Read, the device will continue reading at the beginning of the next page with no delays incurred
during the page boundary crossover (the crossover from the end of one page to the beginning of
the next page). When the last bit in the main memory array has been read, the device will con-
tinue reading back at the beginning of the first page of memory. As with crossing over page
boundaries, no delays will be incurred when wrapping around from the end of the array to the
beginning of the array. A low-to-high transition on the CS pin will terminate the read operation
and tri-state the output pin (SO). The Continuous Array Read bypasses the data buffer and
leaves the contents of the buffer unchanged.
6.4
Main Memory Page Read
A main memory page read allows the user to read data directly from any one of the 2,048 pages
in the main memory, bypassing the data buffer and leaving the contents of the buffer
unchanged. To start a page read from the DataFlash standard page size (264 bytes), an opcode
of D2H must be clocked into the device followed by three address bytes (which comprise the
24-bit page and byte address sequence) and 4 don’t care bytes. The first 9 bits (PA8 - PA0) of
the 18-bit address sequence specify the page in main memory to be read, and the last 9 bits
(BA8 - BA0) of the 18-bit address sequence specify the starting byte address within that page.
To start a page read from the binary page size (256 bytes), the opcode D2H must be
clocked into the device followed by three address bytes and 4 don’t care bytes. The first 9 bits
(A16 - A8) of the 17-bit sequence specify which page of the main memory array to read, and the
last 8 bits (A7 - A0) of the 17-bit address sequence specify the starting byte address within the
page. The don’t care bytes that follow the address bytes are sent to initialize the read operation.
Following the don’t care bytes, additional pulses on SCK result in data being output on the SO
(serial output) pin. The CS pin must remain low during the loading of the opcode, the address
bytes, the don’t care bytes, and the reading of data. When the end of a page in main memory is
6
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
reached, the device will continue reading back at the beginning of the same page. A low-to-high
transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The
maximum SCK frequency allowable for the Main Memory Page Read is defined by the fSCK
specification. The Main Memory Page Read bypasses the data buffer and leaves the contents of
the buffer unchanged.
6.5
Buffer Read
The SRAM data buffer can be accessed independently from the main memory array, and utiliz-
ing the Buffer Read Command allows data to be sequentially read directly from the buffer. Two
opcodes, D4H or D1H, can be used for the Buffer Read Command. The use of each opcode
depends on the maximum SCK frequency that will be used to read data from the buffer. The
D4H opcode can be used at any SCK frequency up to the maximum specified by fCAR1. The D1H
opcode can be used for lower frequency read operations up to the maximum specified by fCAR2
.
To perform a buffer read from the DataFlash standard buffer (264 bytes), the opcode must be
clocked into the device followed by three address bytes comprised of 15 don’t care bits and
9 buffer address bits (BFA8 - BFA0). To perform a buffer read from the binary buffer (256 bytes),
the opcode must be clocked into the device followed by three address bytes comprised of
16 don’t care bits and 8 buffer address bits (BFA7 - BFA0). Following the address bytes, one
don’t care byte must be clocked in to initialize the read operation. The CS pin must remain low
during the loading of the opcode, the address bytes, the don’t care bytes, and the reading of
data. When the end of a buffer is reached, the device will continue reading back at the beginning
of the buffer. A low-to-high transition on the CS pin will terminate the read operation and tri-state
the output pin (SO).
7. Program and Erase Commands
7.1
Buffer Write
Data can be clocked in from the input pin (SI) into the buffer. To load data into the DataFlash
standard buffer (264 bytes), a 1-byte opcode, 84H, must be clocked into the device followed by
three address bytes comprised of 15 don’t care bits and 9 buffer address bits (BFA8 - BFA0).
The 9 buffer address bits specify the first byte in the buffer to be written. To load data into the
binary buffers (256 bytes each), a 1-byte opcode, 84H, must be clocked into the device followed
by three address bytes comprised of 16 don’t care bits and 8 buffer address bits (BFA7 - BFA0).
The 8 buffer address bits specify the first byte in the buffer to be written. After the last address
byte has been clocked into the device, data can then be clocked in on subsequent clock cycles.
If the end of the data buffer is reached, the device will wrap around back to the beginning of the
buffer. Data will continue to be loaded into the buffer until a low-to-high transition is detected on
the CS pin.
7.2
Buffer to Main Memory Page Program with Built-in Erase
Data written into the buffer can be programmed into the main memory. A 1-byte opcode, 83H,
must be clocked into the device. For the DataFlash standard page size (264 bytes), the opcode
must be followed by three address bytes consist of 5 don’t care bits, 9 page address bits
(PA8 - PA0) that specify the page in the main memory to be written and 9 don’t care bits. To per-
form a buffer to main memory page program with built-in erase for the binary page size (256
bytes), the opcode 83H must be clocked into the device followed by three address bytes consist-
ing of 7 don’t care bits, 9 page address bits (A16 - A8) that specify the page in the main memory
to be written and 8 don’t care bits. When a low-to-high transition occurs on the CS pin, the part
7
3639H–DFLASH–04/09
will first erase the selected page in main memory (the erased state is a logic 1) and then pro-
gram the data stored in the buffer into the specified page in main memory. Both the erase and
the programming of the page are internally self-timed and should take place in a maximum time
of tEP. During this time, the status register will indicate that the part is busy.
7.3
Buffer to Main Memory Page Program without Built-in Erase
A previously-erased page within main memory can be programmed with the contents of the buf-
fer. A 1-byte opcode, 88H, must be clocked into the device. For the DataFlash standard page
size (264 bytes), the opcode must be followed by three address bytes consist of 6 don’t care
bits, 9 page address bits (PA8 - PA0) that specify the page in the main memory to be written and
9 don’t care bits. To perform a buffer to main memory page program without built-in erase for the
binary page size (256 bytes), the opcode 88H must be clocked into the device followed by three
address bytes consisting of 7 don’t care bits, 9 page address bits (A16 - A8) that specify the
page in the main memory to be written and 8 don’t care bits. When a low-to-high transition
occurs on the CS pin, the part will program the data stored in the buffer into the specified page in
the main memory. It is necessary that the page in main memory that is being programmed has
been previously erased using one of the erase commands (Page Erase or Block Erase). The
programming of the page is internally self-timed and should take place in a maximum time of tP.
During this time, the status register will indicate that the part is busy.
7.4
Page Erase
The Page Erase command can be used to individually erase any page in the main memory array
allowing the Buffer to Main Memory Page Program to be utilized at a later time. To perform a
page erase in the DataFlash standard page size (264 bytes), an opcode of 81H must be loaded
into the device, followed by three address bytes comprised of 6 don’t care bits, 9 page address
bits (PA8 - PA0) that specify the page in the main memory to be erased and 9 don’t care bits. To
perform a page erase in the binary page size (256 bytes), the opcode 81H must be loaded into
the device, followed by three address bytes consist of 7 don’t care bits, 9 page address bits
(A16 - A8) that specify the page in the main memory to be erased and 8 don’t care bits. When a
low-to-high transition occurs on the CS pin, the part will erase the selected page (the erased
state is a logical 1). The erase operation is internally self-timed and should take place in a maxi-
mum time of tPE. During this time, the status register will indicate that the part is busy.
7.5
Block Erase
A block of eight pages can be erased at one time. This command is useful when large amounts
of data has to be written into the device. This will avoid using multiple Page Erase Commands.
To perform a block erase for the DataFlash standard page size (264 bytes), an opcode of 50H
must be loaded into the device, followed by three address bytes comprised of 6 don’t care bits,
6 page address bits (PA8 -PA3) and 12 don’t care bits. The 6 page address bits are used to
specify which block of eight pages is to be erased. To perform a block erase for the binary page
size (256 bytes), the opcode 50H must be loaded into the device, followed by three address
bytes consisting of 7 don’t care bits, 6 page address bits (A16 - A11) and 11 don’t care bits. The
6 page address bits are used to specify which block of eight pages is to be erased. When a low-
to-high transition occurs on the CS pin, the part will erase the selected block of eight pages. The
erase operation is internally self-timed and should take place in a maximum time of tBE. During
this time, the status register will indicate that the part is busy.
8
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
Table 7-1.
Block Erase Addressing
PA8/
A16
PA7/
A15
PA6/
A14
PA5/
A13
PA4/
A12
PA3/
A11
PA2/
A10
PA1/
A9
PA0/
A8
Block
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
0
1
2
3
X
X
X
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
60
61
62
63
7.6
Sector Erase
The Sector Erase command can be used to individually erase any sector in the main memory.
There are 4 sectors and only one sector can be erased at one time. To perform sector 0a or sec-
tor 0b erase for the DataFlash standard page size (264 bytes), an opcode of 7CH must be
loaded into the device, followed by three address bytes comprised of 5 don’t care bits, 7 page
address bits (PA9 - PA3) and 12 don’t care bits. To perform a sector 1-3 erase, the opcode 7CH
must be loaded into the device, followed by three address bytes comprised of 6 don’t care bits, 2
page address bits (PA8 - PA7) and 16 don’t care bits. To perform sector 0a or sector 0b erase
for the binary page size (256 bytes), an opcode of 7CH must be loaded into the device, followed
by three address bytes comprised of 6 don’t care bits and 7 page address bits (A17 - A11) and
11 don’t care bits. To perform a sector 1-3 erase, the opcode 7CH must be loaded into the
device, followed by three address bytes comprised of 7 don’t care bit and 2 page address bits
(A16 - A15) and 16 don’t care bits. The page address bits are used to specify any valid address
location within the sector which is to be erased. When a low-to-high transition occurs on the CS
pin, the part will erase the selected sector. The erase operation is internally self-timed and
should take place in a maximum time of tSE. During this time, the status register will indicate that
the part is busy.
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3639H–DFLASH–04/09
Table 7-2.
Sector Erase Addressing
PA8/
A16
PA7/
A15
PA6/
A14
PA5/
A13
PA4/
A12
PA3/
A11
PA2/
A10
PA1/
A9
PA0/
A8
Sector
0
0
0
1
1
0
0
1
0
1
0
0
0
X
X
0
0
0
0
0
X
X
0
1
X
X
0
X
X
0
X
X
0
0a
0b
1
0
0
X
X
X
X
X
X
X
X
X
X
2
3
7.7
Chip Erase
The entire main memory can be erased at one time by using the Chip Erase command.
To execute the Chip Erase command, a 4-byte command sequence C7H, 94H, 80H and 9AH
must be clocked into the device. Since the entire memory array is to be erased, no address
bytes need to be clocked into the device, and any data clocked in after the opcode will be
ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be deas-
serted to start the erase process. The erase operation is internally self-timed and should take
place in a time of tCE. During this time, the Status Register will indicate that the device is busy.
The Chip Erase command will not affect sectors that are protected or locked down; the contents
of those sectors will remain unchanged. Only those sectors that are not protected or locked
down will be erased.
The WP pin can be asserted while the device is erasing, but protection will not be activated until
the internal erase cycle completes.
Command
Byte 1
Byte 2
Byte 3
Byte 4
Chip Erase
C7H
94H
80H
9AH
Figure 7-1. Chip Erase
CS
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
SI
Each transition
represents 8 bits
10
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
7.8
Main Memory Page Program Through Buffer
This operation is a combination of the Buffer Write and Buffer to Main Memory Page Program
with Built-in Erase operations. Data is first clocked into the buffer from the input pin (SI) and then
programmed into a specified page in the main memory. To perform a main memory page pro-
gram through buffer for the DataFlash standard page size (264 bytes), a 1-byte opcode, 82H,
must first be clocked into the device, followed by three address bytes. The address bytes are
comprised of 6 don’t care bits, 9 page address bits, (PA8 - PA0) that select the page in the main
memory where data is to be written, and 9 buffer address bits (BFA8 - BFA0) that select the first
byte in the buffer to be written. To perform a main memory page program through buffer for the
binary page size (256 bytes), the opcode 82H must be clocked into the device followed by three
address bytes consisting of 7 don’t care bits, 9 page address bits (A16 - A8) that specify the
page in the main memory to be written, and 8 buffer address bits (BFA7 - BFA0) that selects the
first byte in the buffer to be written. After all address bytes are clocked in, the part will take data
from the input pins and store it in the specified data buffer. If the end of the buffer is reached, the
device will wrap around back to the beginning of the buffer. When there is a low-to-high transi-
tion on the CS pin, the part will first erase the selected page in main memory to all 1s and then
program the data stored in the buffer into that memory page. Both the erase and the program-
ming of the page are internally self-timed and should take place in a maximum time of tEP
During this time, the status register will indicate that the part is busy.
.
8. Sector Protection
Two protection methods, hardware and software controlled, are provided for protection against
inadvertent or erroneous program and erase cycles. The software controlled method relies on
the use of software commands to enable and disable sector protection while the hardware con-
trolled method employs the use of the Write Protect (WP) pin. The selection of which sectors
that are to be protected or unprotected against program and erase operations is specified in the
nonvolatile Sector Protection Register. The status of whether or not sector protection has been
enabled or disabled by either the software or the hardware controlled methods can be deter-
mined by checking the Status Register.
11
3639H–DFLASH–04/09
8.1
Software Sector Protection
8.1.1
Enable Sector Protection Command
Sectors specified for protection in the Sector Protection Register can be protected from program
and erase operations by issuing the Enable Sector Protection command. To enable the sector
protection using the software controlled method, the CS pin must first be asserted as it would be
with any other command. Once the CS pin has been asserted, the appropriate 4-byte command
sequence must be clocked in via the input pin (SI). After the last bit of the command sequence
has been clocked in, the CS pin must be deasserted after which the sector protection will be
enabled.
Command
Byte 1
Byte 2
Byte 3
Byte 4
Enable Sector Protection
3DH
2AH
7FH
A9H
Figure 8-1. Enable Sector Protection
CS
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
SI
Each transition
represents 8 bits
8.1.2
Disable Sector Protection Command
To disable the sector protection using the software controlled method, the CS pin must first be
asserted as it would be with any other command. Once the CS pin has been asserted, the
appropriate 4-byte sequence for the Disable Sector Protection command must be clocked in via
the input pin (SI). After the last bit of the command sequence has been clocked in, the CS pin
must be deasserted after which the sector protection will be disabled. The WP pin must be in the
deasserted state; otherwise, the Disable Sector Protection command will be ignored.
Command
Byte 1
Byte 2
Byte 3
Byte 4
Disable Sector Protection
3DH
2AH
7FH
9AH
Figure 8-2. Disable Sector Protection
CS
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
SI
Each transition
represents 8 bits
8.1.3
Various Aspects About Software Controlled Protection
Software controlled protection is useful in applications in which the WP pin is not or cannot be
controlled by a host processor. In such instances, the WP pin may be left floating (the WP pin is
internally pulled high) and sector protection can be controlled using the Enable Sector Protection
and Disable Sector Protection commands.
If the device is power cycled, then the software controlled protection will be disabled. Once the
device is powered up, the Enable Sector Protection command should be reissued if sector pro-
tection is desired and if the WP pin is not used.
12
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
9. Hardware Controlled Protection
Sectors specified for protection in the Sector Protection Register and the Sector Protection Reg-
ister itself can be protected from program and erase operations by asserting the WP pin and
keeping the pin in its asserted state. The Sector Protection Register and any sector specified for
protection cannot be erased or reprogrammed as long as the WP pin is asserted. In order to
modify the Sector Protection Register, the WP pin must be deasserted. If the WP pin is perma-
nently connected to GND, then the content of the Sector Protection Register cannot be changed.
If the WP pin is deasserted, or permanently connected to VCC, then the content of the Sector
Protection Register can be modified.
The WP pin will override the software controlled protection method but only for protecting the
sectors. For example, if the sectors were not previously protected by the Enable Sector Protec-
tion command, then simply asserting the WP pin would enable the sector protection within the
maximum specified tWPE time. When the WP pin is deasserted; however, the sector protection
would no longer be enabled (after the maximum specified tWPD time) as long as the Enable Sec-
tor Protection command was not issued while the WP pin was asserted. If the Enable Sector
Protection command was issued before or while the WP pin was asserted, then simply deassert-
ing the WP pin would not disable the sector protection. In this case, the Disable Sector
Protection command would need to be issued while the WP pin is deasserted to disable the sec-
tor protection. The Disable Sector Protection command is also ignored whenever the WP pin is
asserted.
A noise filter is incorporated to help protect against spurious noise that may inadvertently assert
or deassert the WP pin.
The table below details the sector protection status for various scenarios of the WP pin, the
Enable Sector Protection command, and the Disable Sector Protection command.
Figure 9-1. WP Pin and Protection Status
1
2
3
WP
Table 9-1.
WP Pin and Protection Status
Enable Sector Protection
Sector
Protection
Register
Time
Disable Sector
Protection Command
Sector Protection
Status
Period
WP Pin
Command
Command Not Issued Previously
X
Disabled
Disabled
Enabled
Read/Write
Read/Write
Read/Write
1
2
High
–
Issue Command
–
Issue Command
Low
X
X
Enabled
Read Only
Command Issued During Period 1
or 2
Not Issued Yet
Issue Command
–
Enabled
Disabled
Enabled
Read/Write
Read/Write
Read/Write
3
High
–
Issue Command
13
3639H–DFLASH–04/09
9.1
Sector Protection Register
The nonvolatile Sector Protection Register specifies which sectors are to be protected or unpro-
tected with either the software or hardware controlled protection methods. The Sector Protection
Register contains 4 bytes of data, of which byte locations 0 through 3 contain values that specify
whether sectors 0 through 3 will be protected or unprotected. The Sector Protection Register is
user modifiable and must first be erased before it can be reprogrammed. Table 9-3 illustrates the
format of the Sector Protection Register.
Table 9-2.
Sector Protection Register
Sector Number
Protected
0 (0a, 0b)
1 to 3
FFH
00H
See Table 9-3
Unprotected
Table 9-3.
Sector 0 (0a, 0b)
0a
(Page 0-7)
Bit 7, 6
00
0b
(Page 8-127)
Data
Value
Bit 5, 4
00
Bit 3, 2
xx
Bit 1, 0
xx
Sectors 0a, 0b Unprotected
Protect Sector 0a
0xH
CxH
3xH
11
00
xx
xx
Protect Sector 0b (Page 8-127)
00
11
xx
xx
Protect Sectors 0a (Page 0-7), 0b
(Page 8-127)(1)
11
11
xx
xx
FxH
Note:
1. The default value for bytes 0 through 3 when shipped from Atmel® is 00H.
x = don’t care.
14
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
9.1.1
Erase Sector Protection Register Command
In order to modify and change the values of the Sector Protection Register, it must first be
erased using the Erase Sector Protection Register command.
To erase the Sector Protection Register, the CS pin must first be asserted as it would be with
any other command. Once the CS pin has been asserted, the appropriate 4-byte opcode
sequence must be clocked into the device via the SI pin. The 4-byte opcode sequence must
start with 3DH and be followed by 2AH, 7FH, and CFH. After the last bit of the opcode sequence
has been clocked in, the CS pin must be deasserted to initiate the internally self-timed erase
cycle. The erasing of the Sector Protection Register should take place in a time of tPE, during
which time the Status Register will indicate that the device is busy. If the device is powered-
down before the completion of the erase cycle, then the contents of the Sector Protection Regis-
ter cannot be guaranteed.
The Sector Protection Register can be erased with the sector protection enabled or disabled.
Since the erased state (FFH) of each byte in the Sector Protection Register is used to indicate
that a sector is specified for protection, leaving the sector protection enabled during the erasing
of the register allows the protection scheme to be more effective in the prevention of accidental
programming or erasing of the device. If for some reason an erroneous program or erase com-
mand is sent to the device immediately after erasing the Sector Protection Register and before
the register can be reprogrammed, then the erroneous program or erase command will not be
processed because all sectors would be protected.
Command
Byte 1
Byte 2
Byte 3
Byte 4
Erase Sector Protection Register
3DH
2AH
7FH
CFH
Figure 9-2. Erase Sector Protection Register
CS
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
SI
Each transition
represents 8 bits
15
3639H–DFLASH–04/09
9.1.2
Program Sector Protection Register Command
Once the Sector Protection Register has been erased, it can be reprogrammed using the
Program Sector Protection Register command.
To program the Sector Protection Register, the CS pin must first be asserted and the appropri-
ate 4-byte opcode sequence must be clocked into the device via the SI pin. The 4-byte opcode
sequence must start with 3DH and be followed by 2AH, 7FH, and FCH. After the last bit of the
opcode sequence has been clocked into the device, the data for the contents of the Sector Pro-
tection Register must be clocked in. As described in Section 9.1, the Sector Protection Register
contains 4 bytes of data, so 4 bytes must be clocked into the device. The first byte of data corre-
sponds to sector 0, the second byte corresponds to sector 1, the third byte corresponds to sector
2, and the last byte of data corresponding to sector 3.
After the last data byte has been clocked in, the CS pin must be deasserted to initiate the inter-
nally self-timed program cycle. The programming of the Sector Protection Register should take
place in a time of tP, during which time the Status Register will indicate that the device is busy. If
the device is powered-down during the program cycle, then the contents of the Sector Protection
Register cannot be guaranteed.
If the proper number of data bytes is not clocked in before the CS pin is deasserted, then the
protection status of the sectors corresponding to the bytes not clocked in can not be guaranteed.
For example, if only the first two bytes are clocked in instead of the complete 4 bytes, then the
protection status of the last 2 sectors cannot be guaranteed. Furthermore, if more than 4 bytes
of data is clocked into the device, then the data will wrap back around to the beginning of the
register. For instance, if 5 bytes of data are clocked in, then the 5th byte will be stored at byte
location 0 of the Sector Protection Register.
If a value other than 00H or FFH is clocked into a byte location of the Sector Protection Register,
then the protection status of the sector corresponding to that byte location cannot be guaran-
teed. For example, if a value of 17H is clocked into byte location 2 of the Sector Protection
Register, then the protection status of sector 2 cannot be guaranteed.
The Sector Protection Register can be reprogrammed while the sector protection enabled or dis-
abled. Being able to reprogram the Sector Protection Register with the sector protection enabled
allows the user to temporarily disable the sector protection to an individual sector rather than
disabling sector protection completely.
The Program Sector Protection Register command utilizes the internal SRAM buffer for
processing. Therefore, the contents of the buffer will be altered from its previous state when this
command is issued.
Command
Byte 1
Byte 2
Byte 3
Byte 4
Program Sector Protection Register
3DH
2AH
7FH
FCH
Figure 9-3. Program Sector Protection Register
CS
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
Data Byte
n
Data Byte
n + 1
Data Byte
n + 3
SI
Each transition
represents 8 bits
16
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
9.1.3
Read Sector Protection Register Command
To read the Sector Protection Register, the CS pin must first be asserted. Once the CS pin has
been asserted, an opcode of 32H and 3 dummy bytes must be clocked in via the SI pin. After the
last bit of the opcode and dummy bytes have been clocked in, any additional clock pulses on the
SCK pins will result in data for the content of the Sector Protection Register being output on the
SO pin. The first byte corresponds to sector 0 (0a, 0b), the second byte corresponds to sector 1,
the third byte corresponds to sector 2, and the last byte (byte 4) corresponds to sector 3. Once
the last byte of the Sector Protection Register has been clocked out, any additional clock pulses
will result in undefined data being output on the SO pin. The CS must be deasserted to termi-
nate the Read Sector Protection Register operation and put the output into a high-impedance
state.
Command
Byte 1
Byte 2
Byte 3
Byte 4
Read Sector Protection Register
32H
xxH
xxH
xxH
Note:
xx = Dummy Byte
Figure 9-4. Read Sector Protection Register
CS
Opcode
X
X
X
SI
Data Byte
Data Byte
n + 1
Data Byte
n + 3
SO
n
Each transition
represents 8 bits
9.1.4
Various Aspects About the Sector Protection Register
The Sector Protection Register is subject to a limit of 10,000 erase/program cycles. Users are
encouraged to carefully evaluate the number of times the Sector Protection Register will be
modified during the course of the applications’ life cycle. If the application requires that the Sec-
tor Protection Register be modified more than the specified limit of 10,000 cycles because the
application needs to temporarily unprotect individual sectors (sector protection remains enabled
while the Sector Protection Register is reprogrammed), then the application will need to limit this
practice. Instead, a combination of temporarily unprotecting individual sectors along with dis-
abling sector protection completely will need to be implemented by the application to ensure that
the limit of 10,000 cycles is not exceeded.
17
3639H–DFLASH–04/09
10. Security Features
10.1 Sector Lockdown
The device incorporates a Sector Lockdown mechanism that allows each individual sector to be
permanently locked so that it becomes read only. This is useful for applications that require the
ability to permanently protect a number of sectors against malicious attempts at altering program
code or security information. Once a sector is locked down, it can never be erased or pro-
grammed, and it can never be unlocked.
To issue the Sector Lockdown command, the CS pin must first be asserted as it would be for
any other command. Once the CS pin has been asserted, the appropriate 4-byte opcode
sequence must be clocked into the device in the correct order. The 4-byte opcode sequence
must start with 3DH and be followed by 2AH, 7FH, and 30H. After the last byte of the command
sequence has been clocked in, then three address bytes specifying any address within the sec-
tor to be locked down must be clocked into the device. After the last address bit has been
clocked in, the CS pin must then be deasserted to initiate the internally self-timed lockdown
sequence.
The lockdown sequence should take place in a maximum time of tP, during which time the Status
Register will indicate that the device is busy. If the device is powered-down before the comple-
tion of the lockdown sequence, then the lockdown status of the sector cannot be guaranteed. In
this case, it is recommended that the user read the Sector Lockdown Register to determine the
status of the appropriate sector lockdown bits or bytes and reissue the Sector Lockdown com-
mand if necessary.
Command
Byte 1
Byte 2
Byte 3
Byte 4
Sector Lockdown
3DH
2AH
7FH
30H
Figure 10-1. Sector Lockdown
CS
Address
Bytes
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
Address
Bytes
Address
Bytes
SI
Each transition
represents 8 bits
18
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
10.1.1
Sector Lockdown Register
Sector Lockdown Register is a nonvolatile register that contains 4 bytes of data, as shown
below:
Sector Number
Locked
0 (0a, 0b)
1 to 3
FFH
00H
See Below
Unlocked
Table 10-1. Sector 0 (0a, 0b)
0a
(Page 0-7)
Bit 7, 6
00
0b
(Page 8-127)
Data
Value
Bit 5, 4
00
Bit 3, 2
00
Bit 1, 0
Sectors 0a, 0b Unlocked
00
00
00
00
00H
C0H
30H
F0H
Sector 0a Locked (Page 0-7)
Sector 0b Locked (Page 8-127)
Sectors 0a, 0b Locked (Page 0-127)
11
00
00
00
11
00
11
11
00
10.1.2
Reading the Sector Lockdown Register
The Sector Lockdown Register can be read to determine which sectors in the memory array are
permanently locked down. To read the Sector Lockdown Register, the CS pin must first be
asserted. Once the CS pin has been asserted, an opcode of 35H and 3 dummy bytes must be
clocked into the device via the SI pin. After the last bit of the opcode and dummy bytes have
been clocked in, the data for the contents of the Sector Lockdown Register will be clocked out
on the SO pin. The first byte corresponds to sector 0 (0a, 0b) the second byte corresponds to
sector 1 and the last byte (byte 4) corresponds to sector 3. After the last byte of the Sector Lock-
down Register has been read, additional pulses on the SCK pin will simply result in undefined
data being output on the SO pin.
Deasserting the CS pin will terminate the Read Sector Lockdown Register operation and put the
SO pin into a high-impedance state.
Table 10-2 details the values read from the Sector Lockdown Register.
Table 10-2. Sector Lockdown Register
Command
Byte 1
Byte 2
Byte 3
Byte 4
Read Sector Lockdown Register
35H
xxH
xxH
xxH
Note:
xx = Dummy Byte
Figure 10-2. Read Sector Lockdown Register
CS
Opcode
X
X
X
SI
Data Byte
Data Byte
n + 1
Data Byte
n + 3
SO
n
Each transition
represents 8 bits
19
3639H–DFLASH–04/09
10.2 Security Register
The device contains a specialized Security Register that can be used for purposes such as
unique device serialization or locked key storage. The register is comprised of a total of
128 bytes that is divided into two portions. The first 64 bytes (byte locations 0 through 63) of the
Security Register are allocated as a one-time user programmable space. Once these 64 bytes
have been programmed, they cannot be reprogrammed. The remaining 64 bytes of the register
(byte locations 64 through 127) are factory programmed by Atmel and will contain a unique
value for each device. The factory programmed data is fixed and cannot be changed.
Table 10-3. Security Register
Security Register Byte Number
0
1
• • •
62
63
64
65
• • •
126
127
Data Type
One-time User Programmable
Factory Programmed By Atmel
10.2.1
Programming the Security Register
The user programmable portion of the Security Register does not need to be erased before it is
programmed.
To program the Security Register, the CS pin must first be asserted and the appropriate 4-byte
opcode sequence must be clocked into the device in the correct order. The 4-byte opcode
sequence must start with 9BH and be followed by 00H, 00H, and 00H. After the last bit of the
opcode sequence has been clocked into the device, the data for the contents of the 64-byte user
programmable portion of the Security Register must be clocked in.
After the last data byte has been clocked in, the CS pin must be deasserted to initiate the inter-
nally self-timed program cycle. The programming of the Security Register should take place in a
time of tP, during which time the Status Register will indicate that the device is busy. If the device
is powered-down during the program cycle, then the contents of the 64-byte user programmable
portion of the Security Register cannot be guaranteed.
If the full 64 bytes of data is not clocked in before the CS pin is deasserted, then the values of
the byte locations not clocked in cannot be guaranteed. For example, if only the first two bytes
are clocked in instead of the complete 64 bytes, then the remaining 62 bytes of the user pro-
grammable portion of the Security Register cannot be guaranteed. Furthermore, if more than
64 bytes of data is clocked into the device, then the data will wrap back around to the beginning
of the register. For instance, if 65 bytes of data are clocked in, then the 65th byte will be stored at
byte location 0 of the Security Register.
The user programmable portion of the Security Register can only be programmed one
time. Therefore, it is not possible to only program the first two bytes of the register and then pro-
gram the remaining 62 bytes at a later time.
The Program Security Register command utilizes the internal SRAM buffer for processing.
Therefore, the contents of the buffer will be altered from its previous state when this command is
issued.
Figure 10-3. Program Security Register
CS
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
Data Byte
n
Data Byte
n + 1
Data Byte
n + x
SI
Each transition
represents 8 bits
20
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
10.2.2
Reading the Security Register
The Security Register can be read by first asserting the CS pin and then clocking in an opcode
of 77H followed by three dummy bytes. After the last don’t care bit has been clocked in, the con-
tent of the Security Register can be clocked out on the SO pins. After the last byte of the
Security Register has been read, additional pulses on the SCK pin will simply result in undefined
data being output on the SO pins.
Deasserting the CS pin will terminate the Read Security Register operation and put the SO pins
into a high-impedance state.
Figure 10-4. Read Security Register
CS
SI
Opcode
X
X
X
Data Byte
n
Data Byte
n + 1
Data Byte
n + x
SO
Each transition
represents 8 bits
11. Additional Commands
11.1 Main Memory Page to Buffer Transfer
A page of data can be transferred from the main memory to the buffer. To start the operation for
the DataFlash standard page size (264 bytes), a 1-byte opcode, 53H, must be clocked into the
device, followed by three address bytes comprised of 6 don’t care bits, 9 page address bits
(PA8 - PA0), which specify the page in main memory that is to be transferred, and 9 don’t care
bits. To perform a main memory page to buffer transfer for the binary page size (256 bytes), the
opcode 53H must be clocked into the device followed by three address bytes consisting of 7
don’t care bits, 9 page address bits (A16 - A8) which specify the page in the main memory that is
to be transferred, and 8 don’t care bits. The CS pin must be low while toggling the SCK pin to
load the opcode and the address bytes from the input pin (SI). The transfer of the page of data
from the main memory to the buffer will begin when the CS pin transitions from a low to a high
state. During the transfer of a page of data (tXFR), the status register can be read to determine
whether the transfer has been completed.
11.2 Main Memory Page to Buffer Compare
A page of data in main memory can be compared to the data in the buffer. To initiate the opera-
tion for the DataFlash standard page size, a 1-byte opcode, 60H, must be clocked into the
device, followed by three address bytes consisting of 6 don’t care bits, 9 page address bits
(PA8 - PA0) that specify the page in the main memory that is to be compared to the buffer, and
9 don’t care bits. To start a main memory page to buffer compare for a binary page size, the
opcode 60H must be clocked into the device followed by three address bytes consisting of 6
don’t care bits, 9 page address bits (A16 - A8) that specify the page in the main memory that is
to be compared to the buffer, and 8 don’t care bits. The CS pin must be low while toggling the
SCK pin to load the opcode and the address bytes from the input pin (SI). On the low-to-high
transition of the CS pin, the data bytes in the selected main memory page will be compared with
21
3639H–DFLASH–04/09
the data bytes in the buffer. During this time (tCOMP), the status register will indicate that the part
is busy. On completion of the compare operation, bit 6 of the status register is updated with the
result of the compare.
11.3 Auto Page Rewrite
This mode is only needed if multiple bytes within a page or multiple pages of data are modified in
a random fashion within a sector. This mode is a combination of two operations: Main Memory
Page to Buffer Transfer and Buffer to Main Memory Page Program with Built-in Erase. A page of
data is first transferred from the main memory to the buffer and then the same data (from the
buffer) is programmed back into its original page of main memory. To start the rewrite operation
for the DataFlash standard page size (264 bytes), a 1-byte opcode, 58H, must be clocked into
the device, followed by three address bytes comprised of 6 don’t care bits, 9 page address bits
(PA8 - PA0) that specify the page in main memory to be rewritten and 9 don’t care bits. To initi-
ate an auto page rewrite for a binary page size (256 bytes), the opcode 58H must be clocked
into the device followed by three address bytes consisting of 7 don’t care bits, 9 page address
bits (A16 - A8) that specify the page in the main memory that is to be written and 8 don’t care
bits. When a low-to-high transition occurs on the CS pin, the part will first transfer data from the
page in main memory to a buffer and then program the data from the buffer back into same page
of main memory. The operation is internally self-timed and should take place in a maximum time
of tEP. During this time, the status register will indicate that the part is busy.
If a sector is programmed or reprogrammed sequentially page by page, then the programming
algorithm shown in Figure 25-1 (page 45) is recommended. Otherwise, if multiple bytes in a
page or several pages are programmed randomly in a sector, then the programming algorithm
shown in Figure 25-2 (page 46) is recommended. Each page within a sector must be
updated/rewritten at least once within every 10,000 cumulative page erase/program operations
in that sector.
11.4 Status Register Read
The status register can be used to determine the device’s ready/busy status, page size, a Main
Memory Page to Buffer Compare operation result, the Sector Protection status or the device
density. The Status Register can be read at any time, including during an internally self-timed
program or erase operation. To read the status register, the CS pin must be asserted and the
opcode of D7H must be loaded into the device. After the opcode is clocked in, the 1-byte status
register will be clocked out on the output pin (SO), starting with the next clock cycle. The data in
the status register, starting with the MSB (bit 7), will be clocked out on the SO pin during the next
eight clock cycles. After the one byte of the status register has been clocked out, the sequence
will repeat itself (as long as CS remains low and SCK is being toggled). The data in the status
register is constantly updated, so each repeating sequence will output new data.
Ready/busy status is indicated using bit 7 of the status register. If bit 7 is a 1, then the device is
not busy and is ready to accept the next command. If bit 7 is a 0, then the device is in a busy
state. Since the data in the status register is constantly updated, the user must toggle SCK pin to
check the ready/busy status. There are several operations that can cause the device to be in a
busy state: Main Memory Page to Buffer Transfer, Main Memory Page to Buffer Compare, Buf-
fer to Main Memory Page Program, Main Memory Page Program through Buffer, Page Erase,
Block Erase, Sector Erase, Chip Erase and Auto Page Rewrite.
The result of the most recent Main Memory Page to Buffer Compare operation is indicated using
bit 6 of the status register. If bit 6 is a 0, then the data in the main memory page matches the
22
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
data in the buffer. If bit 6 is a 1, then at least one bit of the data in the main memory page does
not match the data in the buffer.
Bit 1 in the Status Register is used to provide information to the user whether or not the sector
protection has been enabled or disabled, either by software-controlled method or hardware-con-
trolled method. A logic 1 indicates that sector protection has been enabled and logic 0 indicates
that sector protection has been disabled.
Bit 0 in the Status Register indicates whether the page size of the main memory array is config-
ured for “power of 2” binary page size (256 bytes) or the DataFlash standard page size
(264 bytes). If bit 0 is a 1, then the page size is set to 256 bytes. If bit 0 is a 0, then the page size
is set to 264 bytes.
The device density is indicated using bits 5, 4, 3, and 2 of the status register. For the
AT45DB011D, the four bits are 0011 The decimal value of these four binary bits does not equate
to the device density; the four bits represent a combinational code relating to differing densities
of DataFlash devices. The device density is not the same as the density code indicated in the
JEDEC device ID information. The device density is provided only for backward compatibility.
Table 11-1. Status Register Format
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
RDY/BUSY
COMP
0
0
1
1
PROTECT
PAGE SIZE
23
3639H–DFLASH–04/09
12. Deep Power-down
After initial power-up, the device will default in standby mode. The Deep Power-down command
allows the device to enter into the lowest power consumption mode. To enter the Deep Power-
down mode, the CS pin must first be asserted. Once the CS pin has been asserted, an opcode
of B9H command must be clocked in via input pin (SI). After the last bit of the command has
been clocked in, the CS pin must be de-asserted to initiate the Deep Power-down operation.
After the CS pin is de-asserted, the will device enter the Deep Power-down mode within the
maximum tEDPD time. Once the device has entered the Deep Power-down mode, all instructions
are ignored except for the Resume from Deep Power-down command.
Command
Opcode
Deep Power-down
B9H
Figure 12-1. Deep Power-down
CS
SI
Opcode
Each transition
represents 8 bits
12.1 Resume from Deep Power-down
The Resume from Deep Power-down command takes the device out of the Deep Power-down
mode and returns it to the normal standby mode. To Resume from Deep Power-down mode, the
CS pin must first be asserted and an opcode of ABH command must be clocked in via input pin
(SI). After the last bit of the command has been clocked in, the CS pin must be de-asserted to
terminate the Deep Power-down mode. After the CS pin is de-asserted, the device will return to
the normal standby mode within the maximum tRDPD time. The CS pin must remain high during
the tRDPD time before the device can receive any commands. After resuming form Deep Power-
down, the device will return to the normal standby mode.
Command
Opcode
Resume from Deep Power-down
ABH
Figure 12-2. Resume from Deep Power-Down
CS
Opcode
SI
Each transition
represents 8 bits
24
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
13. “Power of 2” Binary Page Size Option
“Power of 2” binary page size Configuration Register is a user-programmable nonvolatile regis-
ter that allows the page size of the main memory to be configured for binary page size
(256 bytes) or the DataFlash standard page size (264 bytes). The “power of 2” page size is a
One-time Programmable (OTP) register and once the device is configured for “power of
2” page size, it cannot be reconfigured again. The devices are initially shipped with the page
size set to 264 bytes. The user has the option of ordering binary page size (256 bytes) devices
from the factory. For details, please refer to Section 26. ”Ordering Information” on page 47.
For the binary “power of 2” page size to become effective, the following steps must be followed:
1. Program the one-time programmable configuration resister using opcode sequence
3DH, 2AH, 80H and A6H (please see Section 13.1).
2. Power cycle the device (i.e. power down and power up again).
3. The page for the binary page size can now be programmed.
If the above steps are not followed to set the page size prior to page programming, incorrect
data during a read operation may be encountered.
13.1 Programming the Configuration Register
To program the Configuration Register for “power of 2” binary page size, the CS pin must first be
asserted as it would be with any other command. Once the CS pin has been asserted, the
appropriate 4-byte opcode sequence must be clocked into the device in the correct order. The
4-byte opcode sequence must start with 3DH and be followed by 2AH, 80H, and A6H. After the
last bit of the opcode sequence has been clocked in, the CS pin must be deasserted to initiate
the internally self-timed program cycle. The programming of the Configuration Register should
take place in a time of tP, during which time the Status Register will indicate that the device is
busy. The device must be power-cycled after the completion of the program cycle to set the
“power of 2” page size. If the device is powered-down before the completion of the program
cycle, then setting the Configuration Register cannot be guaranteed. However, the user should
check bit 0 of the status register to see whether the page size was configured for binary page
size. If not, the command can be re-issued again.
Command
Byte 1
Byte 2
Byte 3
Byte 4
Power of Two Page Size
3DH
2AH
80H
A6H
Figure 13-1. Erase Sector Protection Register
CS
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
SI
Each transition
represents 8 bits
14. Manufacturer and Device ID Read
Identification information can be read from the device to enable systems to electronically query
and identify the device while it is in system. The identification method and the command opcode
comply with the JEDEC standard for “Manufacturer and Device ID Read Methodology for SPI
Compatible Serial Interface Memory Devices”. The type of information that can be read from the
device includes the JEDEC defined Manufacturer ID, the vendor specific Device ID, and the ven-
dor specific Extended Device Information.
25
3639H–DFLASH–04/09
To read the identification information, the CS pin must first be asserted and the opcode of 9FH
must be clocked into the device. After the opcode has been clocked in, the device will begin out-
putting the identification data on the SO pin during the subsequent clock cycles. The first byte
that will be output will be the Manufacturer ID followed by two bytes of Device ID information.
The fourth byte output will be the Extended Device Information String Length, which will be 00H
indicating that no Extended Device Information follows. As indicated in the JEDEC standard,
reading the Extended Device Information String Length and any subsequent data is optional.
Deasserting the CS pin will terminate the Manufacturer and Device ID Read operation and put
the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not
require that a full byte of data be read.
14.1 Manufacturer and Device ID Information
14.1.1
Byte 1 – Manufacturer ID
JEDEC Assigned Code
Hex
Value
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
1FH
0
0
0
1
1
1
1
1
Manufacturer ID
1FH = Atmel
14.1.2
Byte 2 – Device ID (Part 1)
Family Code
Density Code
Hex
Family Code
Density Code
001 = DataFlash
00010 = 1-Mbit
Value
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
22H
0
0
1
0
0
0
1
0
14.1.3
Byte 3 – Device ID (Part 2)
MLC Code
Product Version Code
Hex
MLC Code
000 = 1-bit/Cell Technology
00000 = Initial Version
Value
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
00H
0
0
0
0
0
0
0
0
Product Version
14.1.4
Byte 4 – Extended Device Information String Length
Byte Count
Hex
Value
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
00H
0
0
0
0
0
0
0
0
Byte Count
00H = 0 Bytes of Information
CS
9FH
Opcode
SI
1FH
22H
00H
00H
Data
Data
SO
Manufacturer ID
Byte n
Device ID
Byte 1
Device ID
Byte 2
Extended
Device
Information
String Length
Extended
Device
Information
Byte x
Extended
Device
Information
Byte x + 1
Each transition
represents 8 bits
This information would only be output
if the Extended Device Information String Length
value was something other than 00H.
Note:
Based on JEDEC publication 106 (JEP106), Manufacturer ID data can be comprised of any number of bytes. Some manufacturers may have
Manufacturer ID codes that are two, three or even four bytes long with the first byte(s) in the sequence being 7FH. A system should detect code
7FH as a “Continuation Code” and continue to read Manufacturer ID bytes. The first non-7FH byte would signify the last byte of Manufacturer ID
data. For Atmel (and some other manufacturers), the Manufacturer ID data is comprised of only one byte.
26
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
14.2 Operation Mode Summary
The commands described previously can be grouped into four different categories to better
describe which commands can be executed at what times.
Group A commands consist of:
1. Main Memory Page Read
2. Continuous Array Read
3. Read Sector Protection Register
4. Read Sector Lockdown Register
5. Read Security Register
Group B commands consist of:
1. Page Erase
2. Block Erase
3. Sector Erase
4. Chip Erase
5. Main Memory Page to Buffer Transfer
6. Main Memory Page to Buffer Compare
7. Buffer to Main Memory Page Program with Built-in Erase
8. Buffer to Main Memory Page Program without Built-in Erase
9. Main Memory Page Program through Buffer
10. Auto Page Rewrite
Group C commands consist of:
1. Buffer Read
2. Buffer Write
3. Status Register Read
4. Manufacturer and Device ID Read
Group D commands consist of:
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
If a Group A command is in progress (not fully completed), then another command in Group A,
B, C, or D should not be started. However, during the internally self-timed portion of Group B
commands 1 through 4, any command in Group C can be executed. During the internally self-
timed portion of Group B commands 5 through 10, only Group C commands 3 and 4 can be exe-
cuted. Finally, during the internally self-timed portion of a Group D command, only the Status
Register Read command should be executed.
27
3639H–DFLASH–04/09
15. Command Tables
Table 15-1. Read Commands
Command
Opcode
D2H
Main Memory Page Read
Continuous Array Read (Legacy Command)
Continuous Array Read (Low Frequency)
Continuous Array Read (High Frequency)
Buffer Read (Low Frequency)
Buffer Read
E8H
03H
0BH
D1H
D4H
Table 15-2. Program and Erase Commands
Command
Opcode
Buffer Write
84H
Buffer to Main Memory Page Program with Built-in Erase
83H
Buffer to Main Memory Page Program without Built-in Erase
88H
Page Erase
81H
Block Erase
50H
Sector Erase
7CH
7CH, 94H, 80H, 9AH
82H
Chip Erase
Main Memory Page Program through Buffer
28
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
Table 15-3. Protection and Security Commands
Command
Opcode
3DH + 2AH + 7FH + A9H
3DH + 2AH + 7FH + 9AH
3DH + 2AH + 7FH + CFH
3DH + 2AH + 7FH + FCH
32H
Enable Sector Protection
Disable Sector Protection
Erase Sector Protection Register
Program Sector Protection Register
Read Sector Protection Register
Sector Lockdown
3DH + 2AH + 7FH + 30H
35H
Read Sector Lockdown Register
Program Security Register
Read Security Register
9BH + 00H + 00H + 00H
77H
Table 15-4. Additional Commands
Command
Opcode
53H
Main Memory Page to Buffer Transfer
Main Memory Page to Buffer Compare
Auto Page Rewrite through Buffer
Deep Power-down
60H
58H
B9H
Resume from Deep Power-down
Status Register Read
ABH
D7H
9FH
Manufacturer and Device ID Read
Table 15-5. Legacy Commands(1)
Command
Opcode
54H
Buffer Read
Main Memory Page Read
Continuous Array Read
Status Register Read
52H
68H
57H
Note:
1. These legacy commands are not recommended for new designs.
29
3639H–DFLASH–04/09
Table 15-6. Detailed Bit-level Addressing Sequence for Binary Page Size (256 Bytes)
Page Size = 256 bytes Address Byte Address Byte
Address Byte
Additional
Don’t Care
Bytes
Opcode
Opcode
N/A
1
03h
0Bh
50h
53h
58h
60h
77h
7Ch
81h
82h
83h
84h
88h
9Fh
B9h
ABh
D1h
D2h
D4h
D7h
E8h
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
0
0
0
0
0
1
1
1
0
0
0
0
0
0
1
1
0
0
0
0
1
0
0
1
1
1
0
1
1
0
0
0
0
0
1
1
0
1
1
1
1
0
0
1
0
0
1
0
0
1
0
0
0
0
1
1
1
1
0
0
0
0
1
0
0
0
0
0
0
1
1
0
0
0
1
0
1
0
0
0
0
1
1
0
1
1
0
1
0
0
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
1
0
1
0
0
1
0
1
0
1
0
0
1
1
1
1
0
0
1
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
A
A
A
A
A
A
x
A
A
A
A
A
A
x
A
A
A
A
A
A
x
A
A
A
A
A
A
x
A
A
A
A
A
A
x
A
A
x
A
A
x
A
A
x
A
A
x
A
A
x
A
A
x
A
A
x
A
A
x
A
A
x
A
A
x
A
A
x
A
A
x
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
4
A
A
A
x
A
A
A
x
A
A
A
x
A
A
A
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
A
A
A
x
A
A
A
x
A
A
A
x
A
A
A
x
A
A
A
x
A
A
A
x
A
A
A
x
A
A
A
x
A
A
A
x
x
x
x
x
x
x
x
x
A
x
A
x
A
x
A
x
A
x
A
x
A
x
A
x
A
x
A
x
A
x
A
x
A
x
A
x
A
x
A
x
A
A
A
A
A
A
A
A
A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
A
x
x
A
x
x
A
x
x
A
x
x
x
A
x
x
A
x
x
A
x
x
A
x
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
x
x
A
x
A
A
1
N/A
4
N/A
N/A
N/A
x
x
x
x
x
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
Note:
x = Don’t Care
30
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
Table 15-7. Detailed Bit-level Addressing Sequence for Standard DataFlash Page Size (264 Bytes)
Page Size = 264 bytes Address Byte Address Byte Address Byte
Additional
Don’t Care
Bytes
Opcode
Opcode
N/A
1
03h
0Bh
50h
53h
58h
60h
77h
7Ch
81h
82h
83h
84h
88h
9Fh
B9h
ABh
D1h
D2h
D4h
D7h
E8h
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
0
0
0
0
0
1
1
1
0
0
0
0
0
0
1
1
0
0
0
0
1
0
0
1
1
1
0
1
1
0
0
0
0
0
1
1
0
1
1
1
1
0
0
1
0
0
1
0
0
1
0
0
0
0
1
1
1
1
0
0
0
0
1
0
0
0
0
0
0
1
1
0
0
0
1
0
1
0
0
0
0
1
1
0
1
1
0
1
0
0
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
1
0
1
0
0
1
0
1
0
1
0
0
1
1
1
1
0
0
1
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
P
P
P
P
P
P
x
P
P
P
P
P
P
x
P
P
P
P
P
P
x
P
P
P
P
P
P
x
P
P
P
P
P
P
x
P
P
x
P
P
x
P
P
x
P
P
x
B
B
x
B
B
x
B
B
x
B
B
x
B
B
x
B
B
x
B
B
x
B
B
x
B
B
x
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
4
P
P
P
x
P
P
P
x
P
P
P
x
P
P
P
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
P
P
P
x
P
P
P
x
P
P
P
x
P
P
P
x
P
P
P
x
P
P
P
x
P
P
P
x
P
P
P
x
P
P
P
x
x
x
x
x
x
x
x
x
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
B
x
P
P
P
P
P
P
P
P
P
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
P
x
x
P
x
x
P
x
x
P
x
x
P
x
x
x
P
x
x
P
x
x
P
x
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
x
x
P
x
B
B
1
N/A
4
N/A
N/A
N/A
x
x
x
x
x
x
P
P
P
P
P
P
P
P
P
B
B
B
B
B
B
B
B
B
Note:
P = Page Address Bit
B = Byte/Buffer Address Bit
x = Don’t Care
31
3639H–DFLASH–04/09
16. Power-on/Reset State
When power is first applied to the device, or when recovering from a reset condition, the device
will default to Mode 3. In addition, the output pin (SO) will be in a high impedance state, and a
high-to-low transition on the CS pin will be required to start a valid instruction. The mode (Mode
3 or Mode 0) will be automatically selected on every falling edge of CS by sampling the inactive
clock state.
16.1 Initial Power-up/Reset Timing Restrictions
At power up, the device must not be selected until the supply voltage reaches the VCC (min.) and
further delay of tVCSL. During power-up, the internal Power-on Reset circuitry keeps the device in
reset mode until the VCC rises above the Power-on Reset threshold value (VPOR). At this time, all
operations are disabled and the device does not respond to any commands. After power up is
applied and the VCC is at the minimum operating voltage VCC (min.), the tVCSL delay is required
before the device can be selected in order to perform a read operation.
Similarly, the tPUW delay is required after the VCC rises above the Power-on Reset threshold
value (VPOR) before the device can perform a write (Program or Erase) operation. After initial
power-up, the device will default in Standby mode.
Symbol
tVCSL
Parameter
Min
Typ
Max
Units
ms
ms
V
VCC (min.) to Chip Select low
Power-Up Device Delay before Write Allowed
Power-On Reset Voltage
1
tPUW
20
VPOR
1.5
2.5
17. System Considerations
The RapidS serial interface is controlled by the clock SCK, serial input SI and chip select CS
pins. These signals must rise and fall monotonically and be free from noise. Excessive noise or
ringing on these pins can be misinterpreted as multiple edges and cause improper operation of
the device. The PC board traces must be kept to a minimum distance or appropriately termi-
nated to ensure proper operation. If necessary, decoupling capacitors can be added on these
pins to provide filtering against noise glitches.
As system complexity continues to increase, voltage regulation is becoming more important. A
key element of any voltage regulation scheme is its current sourcing capability. Like all Flash
memories, the peak current for DataFlash occur during the programming and erase operation.
The regulator needs to supply this peak current requirement. An under specified regulator can
cause current starvation. Besides increasing system noise, current starvation during program-
ming or erase can lead to improper operation and possible data corruption.
32
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
18. Electrical Specifications
Table 18-1. Absolute Maximum Ratings*
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. The "Absolute Maximum Rat-
ings" are stress ratings only and functional
operation of the device at these or any other con-
ditions beyond those indicated in the operational
sections of this specification is not implied. Expo-
sure to absolute maximum rating conditions for
extended periods may affect device reliability.
Voltage Extremes referenced in the "Absolute
Maximum Ratings" are intended to accommo-
date short duration undershoot/overshoot condi-
tions and does not imply or guarantee functional
device operation at these levels for any extended
period of time
Temperature under Bias ................................ -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages (except VCC but including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to VCC + 0.6V
Table 18-2. DC and AC Operating Range
AT45DB011D
-40°C to 85°C
2.7V to 3.6V
Operating Temperature (Case)
VCC Power Supply
Ind.
Table 18-3. DC Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Units
CS, RESET, WP = VIH, all
inputs at CMOS levels
IDP
Deep Power-down Current
15
25
µA
CS, RESET, WP = VIH, all
inputs at CMOS levels
ISB
Standby Current
25
7
50
10
12
14
25
20
µA
mA
mA
mA
mA
mA
f = 20 MHz; IOUT = 0 mA;
VCC = 3.6V
f = 33 MHz; IOUT = 0 mA;
VCC = 3.6V
8
Active Current, Read
Operation
(1)
ICC1
f = 50 MHz; IOUT = 0 mA;
VCC = 3.6V
10
15
12
f = 66 MHz; IOUT = 0 mA;
VCC = 3.6V
Active Current, Program/Erase
Operation
ICC2
VCC = 3.6V
ILI
Input Load Current
Output Leakage Current
Input Low Voltage
VIN = CMOS levels
VI/O = CMOS levels
1
1
µA
µA
V
ILO
VIL
VIH
VOL
VOH
VCC x 0.3
Input High Voltage
Output Low Voltage
Output High Voltage
VCC x 0.7
V
IOL = 1.6 mA; VCC = 2.7V
IOH = -100 µA
0.4
V
VCC - 0.2V
V
Notes: 1. ICC1 during a buffer read is 20 mA maximum @ 20 MHz.
2. All inputs (SI, SCK, CS, WP, and RESET) are guaranteed by design to be 5-Volt tolerant.
33
3639H–DFLASH–04/09
Table 18-4. AC Characteristics – RapidS/Serial Interface
Symbol
fSCK
Parameter
Min
Typ
Max
66
Units
MHz
MHz
MHz
ns
SCK Frequency
fCAR1
fCAR2
tWH
SCK Frequency for Continuous Array Read
SCK Frequency for Continuous Array Read (Low Frequency)
SCK High Time
66
33
6.8
6.8
0.1
0.1
50
5
tWL
SCK Low Time
ns
(1)
tSCKR
SCK Rise Time, Peak-to-Peak (Slew Rate)
SCK Fall Time, Peak-to-Peak (Slew Rate)
Minimum CS High Time
V/ns
V/ns
ns
(1)
tSCKF
tCS
tCSS
tCSH
tSU
CS Setup Time
ns
CS Hold Time
5
ns
Data In Setup Time
2
ns
tH
Data In Hold Time
3
ns
tHO
Output Hold Time
0
ns
tDIS
tV
Output Disable Time
27
35
6
ns
Output Valid
ns
tWPE
tWPD
tEDPD
tRDPD
tXFR
tcomp
tEP
WP Low to Protection Enabled
WP High to Protection Disabled
CS High to Deep Power-down Mode
CS High to Standby Mode
Page to Buffer Transfer Time
Page to Buffer Compare Time
Page Erase and Programming Time (256/264 bytes)
Page Programming Time (256/264 bytes)
Page Erase Time (256/264 bytes)
Block Erase Time (2,048/2,112 bytes)
Sector Erase Time (32,768/33,792 bytes)
Chip Erase Time
1
µs
1
µs
3
µs
35
200
200
35
4
µs
µs
µs
14
2
ms
ms
ms
ms
s
tP
tPE
13
18
0.8
1.8
32
35
2.5
3
tBE
tSE
tCE
s
tRST
tREC
RESET Pulse Width
10
µs
RESET Recovery Time
1
µs
34
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
19. Input Test Waveforms and Measurement Levels
2.4V
AC
AC
DRIVING
LEVELS
1.5V
MEASUREMENT
LEVEL
0.45V
tR, tF < 2 ns (10% to 90%)
20. Output Test Load
DEVICE
UNDER
TEST
30 pF
21. AC Waveforms
Six different timing waveforms are shown on page 36. Waveform 1 shows the SCK signal being
low when CS makes a high-to-low transition, and waveform 2 shows the SCK signal being high
when CS makes a high-to-low transition. In both cases, output SO becomes valid while the
SCK signal is still low (SCK low time is specified as tWL). Timing waveforms 1 and 2 conform to
RapidS serial interface but for frequencies up to 66 MHz. Waveforms 1 and 2 are compatible
with SPI Mode 0 and SPI Mode 3, respectively.
Waveform 3 and waveform 4 illustrate general timing diagram for RapidS serial interface. These
are similar to waveform 1 and waveform 2, except that output SO is not restricted to become
valid during the tWL period. These timing waveforms are valid over the full frequency range (max-
imum frequency = 66 MHz) of the RapidS serial case.
35
3639H–DFLASH–04/09
21.1 Waveform 1 – SPI Mode 0 Compatible (for Frequencies up to 66 MHz)
tCS
CS
tCSS
tWH
tWL
tCSH
SCK
SO
SI
tV
tHO
tDIS
HIGH IMPEDANCE
tSU
HIGH IMPEDANCE
VALID OUT
tH
VALID IN
21.2 Waveform 2 – SPI Mode 3 Compatible (for Frequencies up to 66 MHz)
tCS
CS
tCSS
tWL
tWH
tCSH
SCK
SO
tV
tHO
tDIS
HIGH Z
HIGH IMPEDANCE
VALID OUT
tH
tSU
VALID IN
SI
21.3 Waveform 3 – RapidS Mode 0 (FMAX = 66 MHz)
tCS
CS
tCSS
tWH
tWL
tCSH
SCK
SO
SI
tV
tHO
VALID OUT
tDIS
HIGH IMPEDANCE
tSU
HIGH IMPEDANCE
tH
VALID IN
21.4 Waveform 4 – RapidS Mode 3 (FMAX = 66 MHz)
tCS
CS
tCSS
tWL
tWH
tCSH
SCK
SO
tV
tHO
tDIS
HIGH Z
HIGH IMPEDANCE
VALID OUT
tH
tSU
VALID IN
SI
36
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
21.5 Utilizing the RapidS Function
To take advantage of the RapidS function's ability to operate at higher clock frequencies, a full
clock cycle must be used to transmit data back and forth across the serial bus. The DataFlash is
designed to always clock its data out on the falling edge of the SCK signal and clock data in on
the rising edge of SCK.
For full clock cycle operation to be achieved, when the DataFlash is clocking data out on the
falling edge of SCK, the host controller should wait until the next falling edge of SCK to latch the
data in. Similarly, the host controller should clock its data out on the rising edge of SCK in
order to give the DataFlash a full clock cycle to latch the incoming data in on the next rising edge
of SCK.
Figure 21-1. RapidS Mode
Slave CS
1
8
1
8
1
2
3
4
5
6
7
2
3
4
5
6
7
SCK
B
E
A
C
D
MSB
LSB
MOSI
MISO
BYTE-MOSI
H
G
I
F
MSB
LSB
BYTE-SO
MOSI = Master Out, Slave In
MISO = Master In, Slave Out
The Master is the host controller and the Slave is the DataFlash
The Master always clocks data out on the rising edge of SCK and always clocks data in on the falling edge of SCK.
The Slave always clocks data out on the falling edge of SCK and always clocks data in on the rising edge of SCK.
A. Master clocks out first bit of BYTE-MOSI on the rising edge of SCK.
B. Slave clocks in first bit of BYTE-MOSI on the next rising edge of SCK.
C. Master clocks out second bit of BYTE-MOSI on the same rising edge of SCK.
D. Last bit of BYTE-MOSI is clocked out from the Master.
E. Last bit of BYTE-MOSI is clocked into the slave.
F. Slave clocks out first bit of BYTE-SO.
G. Master clocks in first bit of BYTE-SO.
H. Slave clocks out second bit of BYTE-SO.
I. Master clocks in last bit of BYTE-SO.
37
3639H–DFLASH–04/09
21.6 Reset Timing
CS
t
t
CSS
REC
SCK
RESET
t
RST
HIGH IMPEDANCE
HIGH IMPEDANCE
SO (OUTPUT)
SI (INPUT)
Note:
The CS signal should be in the high state before the RESET signal is deasserted.
21.7 Command Sequence for Read/Write Operations for Page Size 256 Bytes (Except Status
Register Read, Manufacturer and Device ID Read)
SI (INPUT)
CMD
8 bits
8 bits
8 bits
X X X X X X X
X
X X X X X X X X
X X X X X X X X
LSB
MSB
7 Don’t Care
Bits
Page Address
(A16 - A8)
Byte/Buffer Address
(A7 - A0/BFA7 - BFA0)
21.8 Command Sequence for Read/Write Operations for Page Size 264 Bytes (Except Status
Register Read, Manufacturer and Device ID Read)
SI (INPUT)
CMD
8 bits
8 bits
8 bits
X X X X X X
X X X X X X X X X X
X X X X X X X X
LSB
MSB
6 Don’t Care
Bits
Page Address
(PA8 - PA0)
Byte/Buffer Address
(BA8 - BA0/BFA8 - BFA0)
38
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
22. Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
FLASH MEMORY ARRAY
PAGE (256/264 BYTES)
BUFFER TO
MAIN MEMORY
PAGE PROGRAM
BUFFER (256/264 BYTES)
BUFFER
WRITE
I/O INTERFACE
SI
22.1 Buffer Write
Completes writing into the buffer
CS
BINARY PAGE SIZE
16 DON'T CARE + BFA7-BFA0
SI (INPUT)
n
n+1
CMD
X
BFA7-0
X···X, BFA8
Last Byte
22.2 Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)
Starts self-timed erase/program operation
CS
BINARY PAGE SIZE
A16-A8 + 8 DON'T CARE BITS
SI (INPUT)
XXXX XX
CMD
PA8-7
PA6-0, X
Each transition
represents 8 bits
n = 1st byte read
n+1 = 2nd byte read
39
3639H–DFLASH–04/09
23. Read Operations
The following block diagram and waveforms illustrate the various read sequences available.
FLASH MEMORY ARRAY
PAGE (256/264 BYTES)
MAIN MEMORY
PAGE TO
BUFFER
BUFFER (256/264 BYTES)
BUFFER
READ
MAIN MEMORY
PAGE READ
I/O INTERFACE
SO
23.1 Main Memory Page Read
CS
ADDRESS FOR BINARY PAGE SIZE
A16
A15-A8
A7-A0
SI (INPUT)
CMD
PA8-7
PA6-0, BA8
BA7-0
X
X
4 Dummy Bytes
SO (OUTPUT)
n
n+1
23.2 Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer)
Starts reading page data into buffer
CS
BINARY PAGE SIZE
7 DON’T CARE BITS + A16-A8 + 8 DON'T CARE BITS
CMD
X···X, PA8-7
SI (INPUT)
PA6-0, X
XXXX XXXX
SO (OUTPUT)
40
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
23.3 Buffer Read
CS
BINARY PAGE SIZE
16 DON'T CARE + BFA7-BFA0
1 Dummy Byte
X
CMD
X
X..X, BFA8
BFA7- 0
SI (INPUT)
n
n+1
SO (OUTPUT)
Each transition
represents 8 bits
24. Detailed Bit-level Read Waveform – RapidS Serial Interface Mode 0/Mode 3
24.1 Continuous Array Read (Legacy Opcode E8H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34
62 63 64 65 66 67 68 69 70 71 72
SCK
SI
OPCODE
ADDRESS BITS
32 DON'T CARE BITS
1
1
1
0
1
0
0
0
A
A
A
A
A
A
A
A
A
X
X
X
X
X
X
MSB
MSB
MSB
DATA BYTE 1
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
BIT 0 OF
PAGE n+1
BIT 2047/2111
OF PAGE n
24.2 Continuous Array Read (Opcode 0BH)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
SCK
SI
OPCODE
ADDRESS BITS A16 - A0
DON'T CARE
X
0
0
0
0
1
0
1
1
A
A
A
A
A
A
A
A
A
X
X
X
X
X
X
X
MSB
MSB
MSB
DATA BYTE 1
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
41
3639H–DFLASH–04/09
24.3 Continuous Array Read (Low Frequency: Opcode 03H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
SI
OPCODE
ADDRESS BITS A16-A0
0
0
0
0
0
0
1
1
A
A
A
A
A
A
A
A
A
MSB
MSB
DATA BYTE 1
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
24.4 Main Memory Page Read (Opcode: D2H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34
62 63 64 65 66 67 68 69 70 71 72
SCK
SI
OPCODE
ADDRESS BITS
32 DON'T CARE BITS
1
1
0
1
0
0
1
0
A
A
A
A
A
A
A
A
A
X
X
X
X
X
X
MSB
MSB
MSB
DATA BYTE 1
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
24.5 Buffer Read (Opcode D4H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
SCK
ADDRESS BITS
BINARY PAGE SIZE = 16 DON'T CARE + BFA7-BFA0
STANDARD DATAFLASH PAGE SIZE =
15 DON'T CARE + BFA8-BFA0
DON'T CARE
OPCODE
1
1
0
1
0
1
0
0
X
X
X
X
X
X
A
A
A
X
X
X
X
X
X
X
X
SI
MSB
MSB
MSB
DATA BYTE 1
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
42
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
24.6 Buffer Read (Low Frequency: Opcode D1H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
ADDRESS BITS
BINARY PAGE SIZE = 16 DON'T CARE + BFA7-BFA0
STANDARD DATAFLASH PAGE SIZE =
15 DON'T CARE + BFA8-BFA0
OPCODE
1
1
0
1
0
0
0
1
X
X
X
X
X
X
A
A
A
SI
MSB
MSB
DATA BYTE 1
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
24.7 Read Sector Protection Register (Opcode 32H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
SI
OPCODE
DON'T CARE
0
0
1
1
0
0
1
0
X
X
X
X
X
X
X
X
X
MSB
MSB
DATA BYTE 1
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
24.8 Read Sector Lockdown Register (Opcode 35H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
SI
OPCODE
DON'T CARE
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
MSB
MSB
DATA BYTE 1
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
43
3639H–DFLASH–04/09
24.9 Read Security Register (Opcode 77H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
SI
OPCODE
DON'T CARE
0
1
1
1
0
1
1
1
X
X
X
X
X
X
X
X
X
MSB
MSB
DATA BYTE 1
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
24.10 Status Register Read (Opcode D7H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
SCK
SI
OPCODE
1
1
0
1
0
1
1
1
MSB
STATUS REGISTER DATA
STATUS REGISTER DATA
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
MSB
24.11 Manufacturer and Device Read (Opcode 9FH)
CS
0
6
7
8
14 15 16
22 23 24
30 31 32
38
SCK
SI
OPCODE
9FH
HIGH-IMPEDANCE
1FH
DEVICE ID BYTE 1 DEVICE ID BYTE 2
00H
SO
Note: Each transition
shown for SI and SO represents one byte (8 bits)
44
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
25. Auto Page Rewrite Flowchart
Figure 25-1. Algorithm for Programming or Reprogramming of the Entire Array Sequentially
START
provide address
and data
BUFFER WRITE
(84H)
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H)
END
Notes: 1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by-
page.
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer
to Main Memory Page Program operation.
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page
within the entire array.
45
3639H–DFLASH–04/09
Figure 25-2. Algorithm for Randomly Modifying Data
START
provide address of
page to modify
MAIN MEMORY PAGE
If planning to modify multiple
bytes currently stored within
a page of the Flash array
TO BUFFER TRANSFER
(53H)
BUFFER WRITE
(84H)
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H)
AUTO PAGE REWRITE(2)
(58H)
INCREMENT PAGE
ADDRESS POINTER(2)
END
Notes: 1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
cumulative page erase and program operations.
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
must use the address specified by the Page Address Pointer.
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application
note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
46
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
26. Ordering Information
26.1 Ordering Code Detail
A T 4 5 D B 0 1 1 D – S S H – B
Atmel Designator
Product Family
Shipping Carrier Option
B = Bulk (tubes)
Y = Trays
T = Tape and reel
Device Grade
H = NiPdAu lead finish, industrial
temperature range (-40°C to +85°C)
Device Density
Package Option
01 = 1-megabit
SS = 8-lead, 0.150" wide SOIC
S
= 8-lead, 0.208" wide SOIC
M
= 8-pad, 5 x 6 x 0.6 mm UDFN
Interface
1 = Serial
Device Revision
26.2 Green Package Options (Pb/Halide-free/RoHS Compliant)
Ordering Code(1)(2)
Package
Lead Finish
Operating Voltage
fSCK (MHz)
Operation Range
AT45DB011D-MH-Y
AT45DB011D-MH-T
AT45DB011D-MH-SL954(3)
AT45DB011D-MH-SL955(4)
AT45DB011D-SSH-B
8MA1
AT45DB011D-SSH-T
Industrial
8S1
8S2
NiPdAu
2.7V to 3.6V
66
AT45DB011D-SSH-SL954(3)
AT45DB011D-SSH-SL955(4)
AT45DB011D-SH-B
(-40°C to +85°C)
AT45DB011D-SH-T
AT45DB011D-SH-SL954(3)
AT45DB011D-SH-SL955(4)
Notes: 1. The shipping carrier option is not marked on the devices.
2. Standard parts are shipped with the page size set to 264 bytes. The user is able to configure these parts to a 256-byte page
size if desired.
3. Parts ordered with suffix SL954 are shipped in bulk with the page size set to 256 bytes. Parts will have a 954 or SL954
marked on them.
4. Parts ordered with suffix SL955 are shipped in tape and reel with the page size set to 256 bytes. Parts will have a 954 or
SL954 marked on them.
Package Type
8MA1
8S1
8-pad, 5 x 6 x 0.6 mm, Thermally Enhanced Ultra Thin Dual Flat No Lead Package (UDFN)
8-lead, 0.150” Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8-lead, 0.208” Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8S2
47
3639H–DFLASH–04/09
27. Packaging Information
27.1 8MA1 – UDFN
E
C
Pin 1 ID
SIDE VIEW
D
y
TOP VIEW
A1
A
K
E2
Option A
0.45
Pin #1
8
1
2
3
Pin #1 Notch
(0.20 R)
Chamfer
(C 0.35)
COMMON DIMENSIONS
(Unit of Measure = mm)
(Option B)
MIN
MAX
NOM
NOTE
SYMBOL
7
A
0.45
0.55
0.60
e
D2
A1
b
0.00
0.35
0.02
0.40
0.152 REF
5.00
4.00
6.00
3.40
1.27
0.60
–
0.05
0.48
6
C
D
D2
E
4.90
3.80
5.90
3.20
5.10
4.20
6.10
3.60
5
4
b
BOTTOM VIEW
L
E2
e
L
0.50
0.00
0.20
0.75
0.08
–
y
K
–
4/15/08
GPC
YFG
DRAWING NO.
TITLE
REV.
8MA1, 8-pad (5 x 6 x 0.6 mm Body), Thermally
Enhanced Plastic Ultra Thin Dual Flat No Lead
Package (UDFN)
Package Drawing Contact:
packagedrawings@atmel.com
8MA1
D
48
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
27.2 8S1 – JEDEC SOIC
C
1
E
E1
L
N
Ø
TOP VIEW
END VIEW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
MAX
NOM
NOTE
SYMBOL
A1
A1
0.10
–
0.25
D
SIDE VIEW
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
3/17/05
TITLE
DRAWING NO.
REV.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
8S1
C
Small Outline (JEDEC SOIC)
R
49
3639H–DFLASH–04/09
27.3 8S2 – EIAJ SOIC
C
1
E
E1
L
N
θ
TOP VIEW
ENDD VVIIEEWW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.70
0.05
0.35
0.15
5.13
5.18
7.70
0.51
0°
MAX
2.16
0.25
0.48
0.35
5.35
5.40
8.26
0.85
8°
NOM
NOTE
SYMBOL
A1
A
A1
b
4
4
C
D
E1
E
D
2
L
SIDE VIEW
θ
e
1.27 BSC
3
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. Determines the true geometric position.
4. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
4/15/08
GPC
DRAWING NO.
TITLE
REV.
8S2, 8-lead, 0.208” Body, Plastic Small
Outline Package (EIAJ)
Package Drawing Contact:
packagedrawings@atmel.com
STN
8S2
F
50
AT45DB011D
3639H–DFLASH–04/09
AT45DB011D
28. Revision History
Revision Level – Release Date History
A – June 2006
Initial Release
B – February 2007
Removed RDY/BUSY pin references.
Fixed the typographical error in the Block Architecture diagram.
Changed tVCSL time to 1 ms.
Changed IDP (Max) to 15 µA.
Added Chip Erase time.
Changed tRDPD time to 35 µs.
Changed the tXFR and tCOMP times from 400 µs to 200 µs.
Changed part number ordering code to reflect NiPdAu lead finish.
- Changed AT45DB011D-SSU to AT45DB011D-SSH.
- Changed AT45DB011D-SU to AT45DB011D-SH.
- Changed AT45DB011D-MU to AT45DB011D-MH.
Added lead finish details to Ordering Information table.
Added Ordering Code Detail.
C – November 2007
Changed ICC1 (Typ) and ICC1 (Max), for f = 66 MHz, to 15 mA and 25
mA, respectively.
Changed ICC2 (Max) to 20 mA.
D – March 2008
Changed tBE (Typ) to 18 ms.
Changed 8M1-A MLF package to 8MA1 UDFN package.
E – May 2008
Added part number ordering code details for suffixes SL954/955.
Changed tDIS (Typ and Max) to 27 ns and 35 ns, respectively.
F – February 2009
Changed Deep Power-Down Current values
- Increased typical value from 5 µA to 15 µA.
- Increased maximum value from 15 µA to 25 µA.
G – March 2009
H - April 2009
Updated Absolute Maximum Ratings
51
3639H–DFLASH–04/09
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3639H–DFLASH–04/09
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