AT49SV802A-80CI [ATMEL]

Flash, 512KX16, 80ns, PBGA48, 6 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, PLASTIC, CBGA-48;
AT49SV802A-80CI
型号: AT49SV802A-80CI
厂家: ATMEL    ATMEL
描述:

Flash, 512KX16, 80ns, PBGA48, 6 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, PLASTIC, CBGA-48

内存集成电路
文件: 总28页 (文件大小:250K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Features  
Single Voltage Read/Write Operation: 1.65V to 1.95V  
Access Time – 80 ns  
Sector Erase Architecture  
– Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout  
Fast Byte/Word Program Time – 12 µs  
Fast Sector Erase Time – 300 ms  
Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming from Any Sector by Suspending Erase  
of a Different Sector  
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending  
Programming of Any Other Byte/Word  
Low-power Operation  
8-megabit  
(512K x 16/  
1M x 8)  
1.8-volt Only  
Flash Memory  
– 12 mA Active  
– 13 µA Standby  
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
RESET Input for Device Initialization  
Sector Lockdown Support  
TSOP and CBGA Package Options  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
Minimum 100,000 Erase Cycles  
Common Flash Interface (CFI)  
AT49SV802A  
AT49SV802AT  
Description  
The AT49SV802A(T) is a 1.8-volt 8-megabit Flash memory organized as 524,288  
words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on  
I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 23 sec-  
tors for erase operations. The AT49SV802A(T) is offered in a 48-lead TSOP and a  
48-ball CBGA package. The device has CE and OE control signals to avoid any bus  
contention. This device can be read or reprogrammed using a single power supply,  
making it ideally suited for in-system programming.  
Preliminary  
Pin Configurations  
Pin Name  
A0 - A18  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Reset  
OE  
WE  
RESET  
RDY/BUSY  
I/O0 - I/O14  
I/O15 (A-1)  
READY/BUSY Output  
Data Inputs/Outputs  
I/O15 (Data Input/Output, Word Mode)  
A-1 (LSB Address Input, Byte Mode)  
BYTE  
NC  
Selects Byte or Word Mode  
No Connect  
Rev. 3522A–FLASH–10/04  
TSOP Top View  
Type 1  
CBGA Top View  
(Ball Down)  
1
2
3
4
5
6
A15  
A14  
A13  
A12  
A11  
A10  
A9  
1
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
A16  
2
BYTE  
GND  
I/O15/A-1  
I/O7  
3
4
A
B
C
D
E
F
5
6
I/O14  
I/O6  
A3  
A7 RDY/BUSY WE  
A9  
A13  
A12  
A14  
A15  
A16  
7
A8  
8
I/O13  
I/O5  
A4  
A2  
A17  
A6  
NC  
A18  
RST  
NC  
A8  
NC  
9
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
I/O12  
I/O4  
A10  
A11  
I/O7  
WE  
RESET  
NC  
VCC  
I/O11  
I/O3  
A1  
A5  
NC  
NC  
NC  
RDY/BUSY  
A18  
A17  
A7  
I/O10  
I/O2  
A0  
I/O0  
I/O8  
I/O9  
I/O1  
I/O2  
I/O10  
I/O11  
I/O3  
I/O5  
I/O9  
I/O1  
CE  
OE  
VSS  
I/O12 I/O14 BYTE  
G
H
A6  
I/O8  
A5  
I/O0  
VCC  
I/O4  
I/O13 I/015/A-1  
A4  
OE  
A3  
GND  
CE  
I/O6  
VSS  
A2  
A1  
A0  
The device powers on in the read mode. Command sequences are used to place the device in  
other operation modes such as program and erase. The device has the capability to protect  
the data in any sector (see “Sector Lockdown” section).  
To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend  
feature. This feature will put the erase or program on hold for any amount of time and let the  
user read data from or program data to any of the remaining sectors within the memory. The  
end of a program or an erase cycle is detected by the READY/BUSY pin, Data Polling or by  
the toggle bit.  
A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement  
of entering the three-byte program sequence is offered to further improve programming time.  
After entering the six-byte code, only single pulses on the write control lines are required for  
writing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering  
down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing  
it back to VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will  
not work while in this mode; if entered they will result in data being programmed into the  
device. It is not recommended that the six-byte code reside in the software of the final product  
but only exist in external programming code.  
The BYTE pin controls whether the device data I/O pins operate in the byte or word configura-  
tion. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 - I/O15 are  
active and controlled by CE and OE.  
If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins  
I/O0 - I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-  
stated, and the I/O15 pin is used as an input for the LSB (A-1) address function.  
2
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
Block Diagram  
I/O0 - I/O15/A-1  
OUTPUT  
BUFFER  
INPUT  
BUFFER  
IDENTIFIER  
REGISTER  
INPUT  
A0 - A18  
BUFFER  
STATUS  
CE  
REGISTER  
WE  
COMMAND  
REGISTER  
OE  
RESET  
BYTE  
ADDRESS  
LATCH  
DATA  
RDY/BUSY  
COMPARATOR  
WRITE STATE  
MACHINE  
PROGRAM/ERASE  
VOLTAGE SWITCH  
Y-DECODER  
X-DECODER  
Y-GATING  
VCC  
GND  
MAIN  
MEMORY  
Device  
Operation  
READ: The AT49SV802A(T) is accessed like an EPROM. When CE and OE are low and WE  
is high, the data stored at the memory location determined by the address pins are asserted  
on the outputs. The outputs are put in the high impedance state whenever CE or OE is high.  
This dual-line control gives designers flexibility in preventing bus contention.  
COMMAND SEQUENCES: When the device is first powered on, it will be reset to the read or  
standby mode, depending upon the state of the control line inputs. In order to perform other  
device functions, a series of command sequences are entered into the device. The command  
sequences are shown in the “Command Definition in Hex” table on page 11 (I/O8 - I/O15 are  
don’t care inputs for the command codes). The command sequences are written by applying a  
low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address  
is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the  
first rising edge of CE or WE. Standard microprocessor write timings are used. The address  
locations used in the command sequences are not affected by entering the command  
sequences.  
RESET: A RESET input pin is provided to ease some system applications. When RESET is at  
a logic high level, the device is in its standard operating mode. A low level on the RESET input  
halts the present device operation and puts the outputs of the device in a high impedance  
state. When a high level is reasserted on the RESET pin, the device returns to the read or  
standby mode, depending upon the state of the control inputs.  
3
3522A–FLASH–10/04  
ERASURE: Before a byte/word can be reprogrammed, it must be erased. The erased state of  
memory bits is a logical “1”. The entire device can be erased by using the Chip Erase com-  
mand or individual sectors can be erased by using the Sector Erase command.  
CHIP ERASE: The entire device can be erased at one time by using the six-byte chip erase  
software code. After the chip erase has been initiated, the device will internally time the erase  
operation so that no external clocks are required. The maximum time to erase the chip is tEC  
.
If the sector lockdown has been enabled, the chip erase will not erase the data in the sector  
that has been locked out; it will erase only the unprotected sectors. After the chip erase, the  
device will return to the read or standby mode.  
SECTOR ERASE: As an alternative to a full chip erase, the device is organized into 23 sec-  
tors (SA0 - SA22) that can be individually erased. The Sector Erase command is a six-bus  
cycle operation. The sector address is latched on the falling WE edge of the sixth cycle while  
the 30H data input command is latched on the rising edge of WE. The sector erase starts after  
the rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will  
automatically time to completion. The maximum time to erase a sector is tSEC. When the sec-  
tor programming lockdown feature is not enabled, the sector will erase (from the same Sector  
Erase command). An attempt to erase a sector that has been protected will result in the oper-  
ation terminating immediately.  
BYTE/WORD PROGRAMMING: Once a memory block is erased, it is programmed (to a logi-  
cal “0”) on a byte-by-byte or on a word-by-word basis. Programming is accomplished via the  
internal device command register and is a four-bus cycle operation. The device will automati-  
cally generate the required internal program pulses.  
Any commands written to the chip during the embedded programming cycle will be ignored. If  
a hardware reset happens during programming, the data at the location being programmed  
will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase  
operations can convert “0”s to “1”s. Programming is completed after the specified tBP cycle  
time. The Data Polling feature or the Toggle Bit feature may be used to indicate the end of a  
program cycle. If the erase/program status bit is a “1”, the device was not able to verify that the  
erase or program operation was performed successfully.  
PROGRAM/ERASE STATUS: The device provides several bits to determine the status of a  
program or erase operation: I/O2, I/O5, I/O6 and I/O7. The “Status Bit Table” on page 10 and  
the following four sections describe the function of these bits. To provide greater flexibility for  
system designers, the AT49SV802A(T) contains a programmable configuration register. The  
configuration register allows the user to specify the status bit operation. The configuration reg-  
ister can be set to one of two different values, “00” or “01”. If the configuration register is set to  
“00”, the part will automatically return to the read mode after a successful program or erase  
operation. If the configuration register is set to a “01”, a Product ID Exit command must be  
given after a successful program or erase operation before the part will return to the read  
mode. It is important to note that whether the configuration register is set to a “00” or to a “01”,  
any unsuccessful program or erase operation requires using the Product ID Exit command to  
return the device to read mode. The default value (after power-up) for the configuration regis-  
ter is “00”. Using the four-bus cycle Set Configuration Register command as shown in the  
“Command Definition in Hex” table on page 11, the value of the configuration register can be  
changed. Voltages applied to the RESET pin will not alter the value of the configuration regis-  
ter. The value of the configuration register will affect the operation of the I/O7 status bit as  
described below.  
4
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
DATA POLLING: The AT49SV802A(T) features Data Polling to indicate the end of a program  
cycle. If the status configuration register is set to a “00”, during a program cycle an attempted  
read of the last byte/word loaded will result in the complement of the loaded data on I/O7.  
Once the program cycle has been completed, true data is valid on all outputs and the next  
cycle may begin. During a chip or sector erase operation, an attempt to read the device will  
give a “0” on I/O7. Once the program or erase cycle has completed, true data will be read from  
the device. Data Polling may begin at any time during the program cycle. Please see “Status  
Bit Table” on page 10 for more details.  
If the status bit configuration register is set to a “01”, the I/O7 status bit will be low while the  
device is actively programming or erasing data. I/O7 will go high when the device has com-  
pleted a program or erase operation. Once I/O7 has gone high, status information on the other  
pins can be checked.  
The Data Polling status bit must be used in conjunction with the erase/program and VPP status  
bit as shown in the algorithm in Figures 1 and 2 on page 8.  
TOGGLE BIT: In addition to Data Polling the AT49SV802A(T) provides another method for  
determining the end of a program or erase cycle. During a program or erase operation, suc-  
cessive attempts to read data from the memory will result in I/O6 toggling between one and  
zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be  
read. Examining the toggle bit may begin at any time during a program cycle. Please see “Sta-  
tus Bit Table” on page 10 for more details.  
The toggle bit status bit should be used in conjunction with the erase/program status bit as  
shown in the algorithm in Figures 3 and 4 on page 9.  
ERASE/PROGRAM STATUS BIT: The device offers a status bit on I/O5, which indicates  
whether the program or erase operation has exceeded a specified internal pulse count limit. If  
the status bit is a “1”, the device is unable to verify that an erase or a byte/word program oper-  
ation has been successfully performed. If a program (Sector Erase) command is issued to a  
protected sector, the protected sector will not be programmed (erased). The device will go to a  
status read mode and the I/O5 status bit will be set high, indicating the program (erase) opera-  
tion did not complete as requested. Once the erase/program status bit has been set to a “1”,  
the system must write the Product ID Exit command to return to the read mode. The  
erase/program status bit is a “0” while the erase or program operation is still in progress.  
Please see “Status Bit Table” on page 10 for more details.  
SECTOR LOCKDOWN: Each sector has a programming lockdown feature. This feature pre-  
vents programming of data in the designated sectors once the feature has been enabled.  
These sectors can contain secure code that is used to bring up the system. Enabling the lock-  
down feature will allow the boot code to stay in the device while data in the rest of the device is  
updated. This feature does not have to be activated; any sector’s usage as a write-protected  
region is optional to the user.  
At power-up or reset, all sectors are unlocked. To activate the lockdown for a specific sector,  
the six-bus cycle Sector Lockdown command must be issued. Once a sector has been locked  
down, the contents of the sector is read-only and cannot be erased or programmed.  
SECTOR LOCKDOWN DETECTION: A software method is available to determine if program-  
ming of a sector is locked down. When the device is in the software product identification  
mode (see “Software Product Identification Entry/Exit” sections on page 22), a read from  
address location 00002H within a sector will show if programming the sector is locked down. If  
the data on I/O0 is low, the sector can be programmed; if the data on I/O0 is high, the program  
lockdown feature has been enabled and the sector cannot be programmed. The software  
product identification exit code should be used to return to standard operation.  
5
3522A–FLASH–10/04  
SECTOR LOCKDOWN OVERRIDE: The only way to unlock a sector that is locked down is  
through reset or power-up cycles. After power-up or reset, the content of a sector that is  
locked down can be erased and reprogrammed.  
ERASE SUSPEND/ERASE RESUME: The Erase Suspend command allows the system to  
interrupt a sector or chip erase operation and then program or read data from a different sector  
within the memory. After the Erase Suspend command is given, the device requires a  
maximum time of 15 µs to suspend the erase operation. After the erase operation has been  
suspended, the system can then read data or program data to any other sector within the  
device. An address is not required during the Erase Suspend command. During a sector erase  
suspend, another sector cannot be erased. To resume the sector erase operation, the system  
must write the Erase Resume command. The Erase Resume command is a one-bus cycle  
command. The device also supports an erase suspend during a complete chip erase. While  
the chip erase is suspended, the user can read from any sector within the memory that is pro-  
tected. The command sequence for a chip erase suspend and a sector erase suspend are the  
same.  
PROGRAM SUSPEND/PROGRAM RESUME: The Program Suspend command allows the  
system to interrupt a programming operation and then read data from a different byte/word  
within the memory. After the Program Suspend command is given, the device requires a max-  
imum of 20 µs to suspend the programming operation. After the programming operation has  
been suspended, the system can then read data from any other byte/word that is not con-  
tained in the sector in which the programming operation was suspended. An address is not  
required during the program suspend operation. To resume the programming operation, the  
system must write the Program Resume command. The program suspend and resume are  
one-bus cycle commands. The command sequence for the erase suspend and program  
suspend are the same, and the command sequence for the erase resume and program  
resume are the same.  
PRODUCT IDENTIFICATION: The product identification mode identifies the device and man-  
ufacturer as Atmel. It may be accessed by hardware or software operation. The hardware  
operation mode can be used by an external programmer to identify the correct programming  
algorithm for the Atmel product.  
For details, see “Operating Modes” on page 15 (for hardware operation) or “Software Product  
Identification Entry/Exit” sections on page 22. The manufacturer and device codes are the  
same for both modes.  
128-BIT PROTECTION REGISTER: The AT49SV802A(T) contains a 128-bit register that can  
be used for security purposes in system design. The protection register is divided into two  
64-bit blocks. The two blocks are designated as block A and block B. The data in block A is  
non-changeable and is programmed at the factory with a unique number. The data in block B  
is programmed by the user and can be locked out such that data in the block cannot be repro-  
grammed. To program block B in the protection register, the four-bus cycle Program  
Protection Register command must be used as shown in the “Command Definition in Hex”  
table on page 11. To lock out block B, the four-bus cycle Lock Protection Register command  
must be used as shown in the “Command Definition in Hex” table. Data bit D1 must be zero  
during the fourth bus cycle. All other data bits during the fourth bus cycle are don’t cares. To  
determine whether block B is locked out, the Product ID Entry command is given followed by a  
read operation from address 80H. If data bit D1 is zero, block B is locked. If data bit D1 is one,  
block B can be reprogrammed. Please see the “Protection Register Addressing Table” on  
page 12 for the address locations in the protection register. To read the protection register, the  
Product ID Entry command is given followed by a normal read operation from an address  
within the protection register. After determining whether block B is protected or not, or reading  
the protection register, the Product ID Exit command must be given prior to performing any  
other operation.  
6
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
RDY/BUSY: An open-drain READY/BUSY output pin provides another method of detecting  
the end of a program or erase operation. RDY/BUSY is actively pulled low during the internal  
program and erase cycles and is released at the completion of the cycle. The open-drain con-  
nection allows for OR-tying of several devices to the same RDY/BUSY line. Please see  
“Status Bit Table” on page 10 for more details.  
CFI: Common Flash Interface (CFI) is a published, standardized data structure that may be  
read from a flash device. CFI allows system software to query the installed device to deter-  
mine the configurations, various electrical and timing parameters, and functions supported by  
the device. CFI is used to allow the system to learn how to interface to the flash device most  
optimally. The two primary benefits of using CFI are ease of upgrading and second source  
availability. The command to enter the CFI Query mode is a one-bus cycle command which  
requires writing data 98h to address 55h. The CFI Query command can be written when the  
device is ready to read data or can also be written when the part is in the product ID mode.  
Once in the CFI Query mode, the system can read CFI data at the addresses given in Table 1  
on page 23. To exit the CFI Query mode, the product ID exit command must be given.  
HARDWARE DATA PROTECTION: The Hardware Data Protection feature protects against  
inadvertent programs to the AT49SV802A(T) in the following ways: (a) VCC sense: if VCC is  
below 1.65V (typical), the program function is inhibited. (b) VCC power-on delay: once VCC has  
reached the VCC sense level, the device will automatically time out 10 ms (typical) before pro-  
gramming. (c) Program inhibit: holding any one of OE low, CE high or WE high inhibits  
program cycles.  
INPUT LEVELS: While operating with a 1.65V to 1.95V power supply, the address inputs and  
control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the  
operation of the device. The I/O lines can only be driven from 0 to VCC + 0.6V.  
7
3522A–FLASH–10/04  
Figure 1. Data Polling Algorithm  
Figure 2. Data Polling Algorithm  
(Configuration Register = 00)  
(Configuration Register = 01)  
START  
START  
Read I/O7 - I/O0  
Read I/O7 - I/O0  
Read I/O7 - I/O0  
Addr = VA  
YES  
I/O7 = Data?  
NO  
NO  
Toggle Bit =  
Toggle?  
YES  
NO  
I/O5 = 1?  
NO  
I/O5 = 1?  
YES  
YES  
Read I/O7 - I/O0  
Addr = VA  
Read I/O7 - I/O0  
Twice  
YES  
I/O7 = Data?  
NO  
Toggle Bit =  
Toggle?  
NO  
YES  
Program/Erase  
Operation Not  
Successful, Write  
Product ID  
Program/Erase  
Program/Erase  
Operation  
Successful,  
Write Product  
ID Exit Command  
Program/Erase  
Operation Not  
Successful, Write  
Product ID  
Operation  
Successful,  
Device in  
Exit Command  
Read Mode  
Exit Command  
Note:  
1. VA = Valid address for programming. During a sec-  
tor erase operation, a valid address is any sector  
address within the sector being erased. During  
chip erase, a valid address is any non-protected  
sector address.  
Notes: 1. VA = Valid address for programming. During a sec-  
tor erase operation, a valid address is any sector  
address within the sector being erased. During  
chip erase, a valid address is any non-protected  
sector address.  
2. I/O7 should be rechecked even if I/O5 = “1”  
because I/O7 may change simultaneously with  
I/O5.  
8
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
Figure 3. Toggle Bit Algorithm  
Figure 4. Toggle Bit Algorithm  
(Configuration Register = 00)  
(Configuration Register = 01)  
START  
START  
Read I/O7 - I/O0  
Read I/O7 - I/O0  
Read I/O7 - I/O0  
Read I/O7 - I/O0  
NO  
NO  
Toggle Bit =  
Toggle?  
Toggle Bit =  
Toggle?  
YES  
YES  
NO  
NO  
I/O5 = 1?  
I/O5 = 1?  
YES  
YES  
Read I/O7 - I/O0  
Twice  
Read I/O7 - I/O0  
Twice  
Toggle Bit =  
Toggle?  
NO  
Toggle Bit =  
Toggle?  
NO  
YES  
YES  
Program/Erase  
Operation Not  
Successful, Write  
Product ID  
Program/Erase  
Program/Erase  
Operation Not  
Successful, Write  
Product ID  
Program/Erase  
Operation  
Successful,  
Write Product ID  
Exit Command  
Operation  
Successful,  
Device in  
Exit Command  
Read Mode  
Exit Command  
Note:  
1. The system should recheck the toggle bit even if  
I/O5 = “1” because the toggle bit may stop toggling  
as I/O5 changes to “1”.  
Note:  
1. The system should recheck the toggle bit even if  
I/O5 = “1” because the toggle bit may stop toggling  
as I/O5 changes to “1”.  
9
3522A–FLASH–10/04  
Status Bit Table  
Status Bit  
I/O7  
00  
I/O7  
01  
0
I/O6  
I/O5(1)  
I/O2  
00/01  
1
RDY/BUSY  
Configuration Register  
Programming  
00/01  
00/01  
00/01  
I/O7  
0
TOGGLE  
TOGGLE  
0
0
0
0
Erasing  
0
TOGGLE  
Erase Suspended & Read  
Erasing Sector  
1
1
DATA  
0
1
0
DATA  
0
TOGGLE  
DATA  
1
1
0
Erase Suspended & Read  
Non-erasing Sector  
DATA  
I/O7  
DATA  
Erase Suspended & Program  
Non-erasing Sector  
TOGGLE  
TOGGLE  
Erase Suspended & Program  
Suspended and Reading from  
Non-suspended Sectors  
DATA  
DATA  
DATA  
DATA  
DATA  
1
Program Suspended & Read  
Programming Sector  
I/O7  
1
1
0
TOGGLE  
DATA  
1
1
Program Suspended & Read  
Non-programming Sector  
DATA  
DATA  
DATA  
DATA  
Notes: 1. I/O5 switches to a “1” when a program or an erase operation has exceeded the maximum time limits or when a program or  
sector erase operation is performed on a protected sector.  
10  
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
Command Definition in Hex(1)  
1st Bus  
Cycle  
2nd Bus  
Cycle  
3rd Bus  
Cycle  
4th Bus  
Cycle  
5th Bus  
Cycle  
6th Bus  
Cycle  
Command  
Sequence  
Bus  
Cycles  
Addr  
Addr  
555  
Data  
DOUT  
AA  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Read  
1
6
6
4
Chip Erase  
AAA(2)  
AAA  
55  
55  
55  
555  
555  
555  
80  
80  
A0  
555  
555  
AA  
AA  
DIN  
AAA  
AAA  
55  
55  
555  
10  
30  
Sector Erase  
Byte/Word Program  
555  
AA  
SA(3)(4)  
555  
AA  
AAA  
Addr  
Enter Single Pulse  
Program Mode  
6
555  
AA  
AAA  
55  
555  
80  
555  
555  
AA  
AAA  
AAA  
55  
55  
555  
A0  
60  
Single Pulse  
Byte/Word Program  
1
6
1
Addr  
555  
DIN  
AA  
B0  
Sector Lockdown  
AAA(2)  
55  
555  
80  
AA  
SA(3)(4)  
Erase/Program  
Suspend  
XXX  
Erase/Program  
Resume  
1
XXX  
30  
Product ID Entry  
Product ID Exit(5)  
Product ID Exit(5)  
3
3
1
555  
555  
XXX  
AA  
AA  
AAA  
AAA  
55  
55  
555  
555  
90  
F0(8)  
F0(8)  
Program Protection  
Register  
4
4
4
555  
555  
555  
AA  
AA  
AA  
AAA  
AAA  
AAA  
AAA  
55  
55  
55  
55  
555  
555  
555  
555  
C0  
C0  
90  
Addr  
080  
80  
DIN  
X0  
Lock Protection  
Register - Block B  
Status of Block B  
Protection  
(6)  
DOUT  
Set Configuration  
Register  
4
1
555  
X55  
AA  
98  
D0  
XXX  
00/01(7)  
CFI Query  
Notes:  
1. The DATA FORMAT shown for each bus cycle is as follows; I/O7 - I/O0 (Hex). In word operation I/O15 - I/O8  
are don’t care. The ADDRESS FORMAT shown for each bus cycle is as follows: A11 - A0 (Hex). Address A18 through A11 are don’t care in  
the word mode. Address A18 through A11 and A-1 are don’t care in the byte mode.  
2. Since A11 is a Don’t Care, AAA can be replaced with 2AA.  
3. SA = sector address. Any byte/word address within a sector can be used to designate the sector address (see pages 13 - 14 for details).  
4. Once a sector is in the lockdown mode, data in the protected sector cannot be changed unless the chip is reset or power cycled.  
5. Either one of the Product ID Exit commands can be used.  
6. If data bit D1 is “0”, block B is locked. If data bit D1 is “1”, block B can be reprogrammed.  
7. The default state (after power-up) of the configuration register is “00”.  
8. Bytes of data other than F0 may be used to exit the Product ID mode. However, it is recommended that F0 be used.  
Absolute Maximum Ratings*  
Temperature under Bias ................................ -55°C to +125°C  
*NOTICE:  
Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent dam-  
age to the device. This is a stress rating only and  
functional operation of the device at these or any  
other conditions beyond those indicated in the  
operational sections of this specification is not  
implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device  
reliability.  
Storage Temperature..................................... -65°C to +150°C  
All Input Voltages  
(including NC Pins)  
with Respect to Ground...................................-0.6V to +6.25V  
All Output Voltages  
with Respect to Ground.............................-0.6V to VCC + 0.6V  
Voltage on VPP  
with Respect to Ground...................................-0.6V to +13.0V  
11  
3522A–FLASH–10/04  
Protection Register Addressing Table  
Word  
Use  
Factory  
Factory  
Factory  
Factory  
User  
Block  
A7  
A6  
0
A5  
0
A4  
0
A3  
0
A2  
0
A1  
0
A0  
1
0
1
2
3
4
5
6
7
A
A
A
A
B
B
B
B
1
1
0
0
0
0
0
1
0
1
0
0
0
0
0
1
1
1
0
0
0
0
1
0
0
1
0
0
0
0
1
0
1
User  
1
0
0
0
0
1
1
0
User  
1
0
0
0
0
1
1
1
User  
1
0
0
0
1
0
0
0
Note:  
All address lines not specified in the above table must be “0” when accessing the protection register, i.e., A18 - A8 = 0.  
12  
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
AT49SV802A – Sector Address Table  
x8  
x16  
Sector  
SA0  
Size (Bytes/Words)  
8K/4K  
Address Range (A18 - A-1)  
Address Range (A18 - A0)  
000000 - 001FFF  
002000 - 003FFF  
004000 - 005FFF  
006000 - 007FFF  
008000 - 009FFF  
00A000 - 00BFFF  
00C000 - 00DFFF  
00E000 - 00FFFF  
010000 - 01FFFF  
020000 - 02FFFF  
030000 - 03FFFF  
040000 - 04FFFF  
050000 - 05FFFF  
060000 - 06FFFF  
070000 - 07FFFF  
080000 - 08FFFF  
090000 - 09FFFF  
0A0000 - 0AFFFF  
0B0000 - 0BFFFF  
0C0000 - 0CFFFF  
0D0000 - 0DFFFF  
0E0000 - 0EFFFF  
0F0000 - 0FFFFF  
00000 - 00FFF  
01000 - 01FFF  
02000 - 02FFF  
03000 - 03FFF  
04000 - 04FFF  
05000 - 05FFF  
06000 - 06FFF  
07000 - 07FFF  
08000 - 0FFFF  
10000 - 17FFF  
18000 - 1FFFF  
20000 - 27FFF  
28000 - 2FFFF  
30000 - 37FFF  
38000 - 3FFFF  
40000 - 47FFF  
48000 - 4FFFF  
50000 - 57FFF  
58000 - 5FFFF  
60000 - 67FFF  
68000 - 6FFFF  
70000 - 77FFF  
78000 - 7FFFF  
SA1  
8K/4K  
SA2  
8K/4K  
SA3  
8K/4K  
SA4  
8K/4K  
SA5  
8K/4K  
SA6  
8K/4K  
SA7  
8K/4K  
SA8  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
SA9  
SA10  
SA11  
SA12  
SA13  
SA14  
SA15  
SA16  
SA17  
SA18  
SA19  
SA20  
SA21  
SA22  
13  
3522A–FLASH–10/04  
AT49SV802AT – Sector Address Table  
x8  
x16  
Sector  
SA0  
Size (Bytes/Words)  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
64K/32K  
8K/4K  
Address Range (A18 - A-1)  
000000 - 00FFFF  
010000 - 01FFFF  
020000 - 02FFFF  
030000 - 03FFFF  
040000 - 04FFFF  
050000 - 05FFFF  
060000 - 06FFFF  
070000 - 07FFFF  
080000 - 08FFFF  
090000 - 09FFFF  
0A0000 - 0AFFFF  
0B0000 - 0BFFFF  
0C0000 - 0CFFFF  
0D0000 - 0DFFFF  
0E0000 - 0EFFFF  
0F0000 - 0F1FFF  
F20000 - F3FFFF  
F40000 - F5FFFF  
F60000 - F7FFFF  
F80000 - F9FFFF  
FA0000 - FBFFFF  
FC0000 - FDFFFF  
FE0000 - FFFFFF  
Address Range (A18 - A0)  
00000 - 07FFF  
08000 - 0FFFF  
10000 - 17FFF  
18000 - 1FFFF  
20000 - 27FFF  
28000 - 2FFFF  
30000 - 37FFF  
38000 - 3FFFF  
40000 - 47FFF  
48000 - 4FFFF  
50000 - 57FFF  
58000 - 5FFFF  
60000 - 67FFF  
68000 - 6FFFF  
70000 - 77FFF  
78000 - 78FFF  
79000 - 79FFF  
7A000 - 7AFFF  
7B000 - 7BFFF  
7C000 - 7CFFF  
7D000 - 7DFFF  
7E000 - 7EFFF  
7F000 - 7FFFF  
SA1  
SA2  
SA3  
SA4  
SA5  
SA6  
SA7  
SA8  
SA9  
SA10  
SA11  
SA12  
SA13  
SA14  
SA15  
SA16  
SA17  
SA18  
SA19  
SA20  
SA21  
SA22  
8K/4K  
8K/4K  
8K/4K  
8K/4K  
8K/4K  
8K/4K  
8K/4K  
14  
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
DC and AC Operating Range  
AT49SV802A(T)-80  
-40°C - 85°C  
Operating Temperature (Case)  
Ind.  
VCC Power Supply  
1.65V to 1.95V  
Operating Modes  
Mode  
CE  
VIL  
VIL  
VIH  
X
OE  
VIL  
VIH  
X(1)  
X
WE  
RESET  
VIH  
Ai  
Ai  
Ai  
X
I/O  
Read  
VIH  
VIL  
X
DOUT  
DIN  
Program/Erase(2)  
VIH  
Standby/Program Inhibit  
VIH  
High-Z  
VIH  
X
VIH  
Program Inhibit  
X
VIL  
VIH  
X
VIH  
Output Disable  
Reset  
X
X
VIH  
High-Z  
High-Z  
X
X
VIL  
X
Product Identification  
A1 - A18 = VIL, A9 = VH(3), A0 = VIL  
A1 - A18 = VIL, A9 = VH(3), A0 = VIH  
A0 = VIL, A1 - A18 = VIL  
Manufacturer Code(4)  
Device Code(4)  
Hardware  
VIL  
VIL  
VIH  
VIH  
VIH  
Manufacturer Code(4)  
Device Code(4)  
Software(5)  
A0 = VIH, A1 - A18 = VIL  
Notes: 1. X can be VIL or VIH.  
2. Refer to AC programming waveforms on page 20.  
3. VH = 12.0V 0.5V.  
4. Manufacturer Code: 1FH (x8); 001FH (x16), Device Code: 00C4H - AT49SV802A;  
00C6H - AT49SV802AT.  
5. See details under “Software Product Identification Entry/Exit” on page 22.  
15  
3522A–FLASH–10/04  
DC Characteristics  
Symbol  
Parameter  
Condition  
Min  
Typ  
Max  
2
Units  
µA  
µA  
µA  
mA  
mA  
V
ILI  
Input Load Current  
VIN = 0V to VCC  
ILO  
Output Leakage Current  
VCC Standby Current CMOS  
VCC Active Read Current  
VCC Programming Current  
Input Low Voltage  
VI/O = 0V to VCC  
10  
25  
25  
40  
0.4  
ISB  
CE = VCC - 0.3V to VCC  
f = 5 MHz; IOUT = 0 mA  
13  
12  
(1)  
ICC  
ICC1  
VIL  
VIH  
Input High Voltage  
VCC – 2.0  
V
VOL1  
VOL2  
VOH1  
VOH2  
Output Low Voltage  
Output Low Voltage  
Output High Voltage  
Output High Voltage  
IOL = 2.1 mA  
IOL = 100 µA  
IOH = -400 µA  
IOH = -100 µA  
0.25  
0.10  
V
V
1.4  
V
VCC – 0.1  
V
Note:  
1. In the erase mode, ICC is 45 mA.  
16  
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
AC Read Characteristics  
AT49SV802A(T)-80  
Symbol  
tRC  
Parameter  
Min  
Max  
Units  
ns  
Read Cycle Time  
80  
tACC  
Address to Output Delay  
CE to Output Delay  
OE to Output Delay  
CE or OE to Output Float  
80  
80  
80  
25  
ns  
(1)  
tCE  
ns  
(2)  
tOE  
0
0
ns  
(3)(4)  
tDF  
ns  
Output Hold from OE, CE or Address,  
whichever occurred first  
tOH  
tRO  
0
ns  
ns  
RESET to Output Delay  
100  
AC Read Waveforms(1)(2)(3)(4)  
tRC  
ADDRESS  
CE  
ADDRESS VALID  
tCE  
tOE  
OE  
tDF  
tOH  
tACC  
tRO  
RESET  
HIGH Z  
OUTPUT  
VALID  
OUTPUT  
Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC  
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change  
without impact on tACC  
.
.
3. tDF is specified from OE or CE, whichever occurs first (CL = 5 pF).  
4. This parameter is characterized and is not 100% tested.  
17  
3522A–FLASH–10/04  
Input Test Waveforms and Measurement Level  
0.9  
tR, tF < 5 ns  
Output Test Load  
VCC  
Pin Capacitance  
f = 1 MHz, T = 25°C(1)  
Symbol  
CIN  
Typ  
4
Max  
6
Units  
pF  
Conditions  
VIN = 0V  
COUT  
8
12  
pF  
VOUT = 0V  
Note:  
This parameter is characterized and is not 100% tested.  
18  
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
AC Byte/Word Load Characteristics  
Symbol  
Parameter  
Min  
0
Max  
Units  
ns  
t
AS, tOES  
Address, OE Setup Time  
Address Hold Time  
tAH  
35  
0
ns  
tCS  
Chip Select Setup Time  
Chip Select Hold Time  
Write Pulse Width (WE or CE)  
Data Setup Time  
ns  
tCH  
0
ns  
tWP  
35  
35  
0
ns  
tDS  
ns  
tDH, tOEH  
tWPH  
Data, OE Hold Time  
Write Pulse Width High  
ns  
35  
ns  
AC Byte/Word Load Waveforms  
WE Controlled  
CE Controlled  
19  
3522A–FLASH–10/04  
Program Cycle Characteristics  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
µs  
tBP  
Byte/Word Programming Time  
Address Setup Time  
12  
200  
tAS  
0
35  
35  
0
ns  
tAH  
Address Hold Time  
ns  
tDS  
Data Setup Time  
ns  
tDH  
Data Hold Time  
ns  
tWP  
Write Pulse Width  
35  
35  
70  
500  
ns  
tWPH  
tWC  
tRP  
Write Pulse Width High  
Write Cycle Time  
ns  
ns  
Reset Pulse Width  
ns  
tEC  
Chip Erase Cycle Time  
Sector Erase Cycle Time (4K Word Sectors)  
Sector Erase Cycle Time (32K Word Sectors)  
Erase Suspend Time  
13  
0.3  
1.0  
seconds  
seconds  
seconds  
µs  
tSEC1  
tSEC2  
tES  
3.0  
5.0  
15  
tPS  
Program Suspend Time  
10  
µs  
Program Cycle Waveforms  
PROGRAM CYCLE  
OE  
CE  
t
t
t
WP  
BP  
WPH  
WE  
t
t
t
DH  
AS  
AH  
555  
t
AAA  
555  
ADDRESS  
555  
A0 - A18  
DATA  
WC  
t
DS  
INPUT  
DATA  
AA  
55  
A0  
AA  
Sector or Chip Erase Cycle Waveforms  
(1)  
OE  
CE  
t
t
WP  
WPH  
WE  
A0-A18  
DATA  
t
t
t
DH  
AS  
AH  
555  
t
AAA  
555  
555  
AAA  
Note  
2
WC  
t
t
EC  
DS  
AA  
WORD  
55  
WORD  
80  
WORD  
AA  
WORD  
55  
WORD  
Note 3  
0
1
2
3
4
WORD 5  
Notes: 1. OE must be high only when WE and CE are both low.  
2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased.  
(See note 3 under “Command Definitions in Hex” on page 11.)  
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.  
20  
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
Data Polling Characteristics(1)  
Symbol  
Parameter  
Min  
10  
Typ  
Max  
Units  
ns  
tDH  
Data Hold Time  
tOEH  
tOE  
OE Hold Time  
10  
ns  
OE to Output Delay(2)  
Write Recovery Time  
ns  
tWR  
0
ns  
Notes: 1. These parameters are characterized and not 100% tested.  
2. See tOE spec in “AC Read Characteristics” on page 17.  
Data Polling Waveforms  
WE  
CE  
tOEH  
OE  
tDH  
tWR  
tOE  
HIGH Z  
I/O7  
An  
An  
An  
An  
An  
A0-A18  
Toggle Bit Characteristics(1)  
Symbol  
Parameter  
Min  
10  
Typ  
Max  
Units  
ns  
tDH  
Data Hold Time  
tOEH  
tOE  
tOEHP  
tWR  
OE Hold Time  
10  
ns  
OE to Output Delay(2)  
OE High Pulse  
ns  
50  
0
ns  
Write Recovery Time  
ns  
Notes: 1. These parameters are characterized and not 100% tested.  
2. See tOE spec in “AC Read Characteristics” on page 17.  
Toggle Bit Waveforms(1)(2)(3)  
Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling  
input(s).  
2. Beginning and ending state of I/O6 will vary.  
3. Any address location may be used but the address should not vary.  
21  
3522A–FLASH–10/04  
Software Product Identification Entry(1)  
Sector Lockdown Enable Algorithm(1)  
LOAD DATA AA  
TO  
LOAD DATA AA  
TO  
ADDRESS 555  
ADDRESS 555  
LOAD DATA 55  
TO  
LOAD DATA 55  
TO  
ADDRESS AAA  
ADDRESS AAA  
LOAD DATA 80  
TO  
LOAD DATA 90  
TO  
ADDRESS 555  
ADDRESS 555  
LOAD DATA AA  
TO  
ENTER PRODUCT  
IDENTIFICATION  
MODE(2)(3)(5)  
ADDRESS 555  
LOAD DATA 55  
TO  
Software Product Identification Exit(1)(6)  
ADDRESS AAA  
OR  
LOAD DATA AA  
LOAD DATA F0  
TO  
TO  
ADDRESS 555  
ANY ADDRESS  
LOAD DATA 60  
TO  
SECTOR ADDRESS  
EXIT PRODUCT  
IDENTIFICATION  
LOAD DATA 55  
TO  
(4)  
MODE  
ADDRESS AAA  
(2)  
PAUSE 200 µs  
LOAD DATA F0  
TO  
Notes:  
1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)  
Address Format: A11 - A0 (Hex), A-1, and A11 - A18  
(Don’t Care).  
ADDRESS 555  
2. Sector Lockdown feature enabled.  
EXIT PRODUCT  
IDENTIFICATION  
(4)  
MODE  
Notes:  
1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)  
Address Format: A11 - A0 (Hex), A-1, and A11 - A18 (Don’t  
Care).  
2. A1 - A18 = VIL. Manufacturer Code is read for A0 = VIL;  
Device Code is read for A0 = VIH  
.
3. The device does not remain in identification mode if powered  
down.  
4. The device returns to standard operation mode.  
5. Manufacturer Code: 1FH(x8); 001FH(x16)  
Device Code: 00C4H - AT49SV802A;  
00C6H - AT49SV802AT.  
6. Either one of the Product ID Exit commands can be used.  
22  
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
Table 1. Common Flash Interface Definition for AT49SV802A(T)  
Address [x16 Mode]  
10h  
Address [x8 Mode]  
20h  
Data  
0051h  
0052h  
0059h  
0002h  
0000h  
0041h  
0000h  
0000h  
0000h  
0000h  
0000h  
0017h  
0019h  
0000h  
0000h  
0004h  
0000h  
000Ah  
000Eh  
0004h  
0000h  
0002h  
0002h  
0014h  
0002h  
0000h  
0000h  
0000h  
0002h  
000Eh  
0000h  
0000h  
0001h  
0007h  
0000h  
0020h  
0000h  
Comments  
“Q”  
“R”  
“Y”  
11h  
22h  
12h  
24h  
13h  
26h  
14h  
28h  
15h  
2Ah  
2Ch  
2Eh  
30h  
16h  
17h  
18h  
19h  
32h  
1Ah  
1Bh  
1Ch  
1Dh  
1Eh  
1Fh  
34h  
36h  
VCC min write/erase  
38h  
VCC max write/erase  
3Ah  
3Ch  
3Eh  
40h  
VPP min voltage – No VPP  
VPP max voltage – No VPP  
Typ word write – 12 µs  
20h  
21h  
42h  
Typ block erase: 1,000 ms  
Typ chip erase: 13,000 ms  
Max word write/typ time  
N/A  
22h  
44h  
23h  
46h  
24h  
48h  
25h  
4Ah  
4Ch  
4Eh  
50h  
Max block erase/typ block erase  
Max chip erase/typ chip erase  
Device size  
26h  
27h  
28h  
x8/x16 device  
29h  
52h  
x8/x16 device  
2Ah  
2Bh  
2Ch  
2Dh  
2Eh  
2Fh  
54h  
Multiple byte write not supported  
Multiple byte write not supported  
2 regions, X = 2  
56h  
58h  
5Ah  
5Ch  
5Eh  
60h  
64K bytes, Y = 14  
64K bytes, Y = 14  
64K bytes, Z = 256  
64K bytes, Z = 256  
8K bytes, Y = 7  
30h  
31h  
62h  
32h  
64h  
8K bytes, Y = 7  
33h  
66h  
8K bytes, Z = 32  
34h  
68h  
8K bytes, Z = 32  
23  
3522A–FLASH–10/04  
Table 1. Common Flash Interface Definition for AT49SV802A(T) (Continued)  
Address [x16 Mode]  
Address [x8 Mode]  
Data  
Comments  
Vendor Specific Extended Query  
41h  
42h  
43h  
44h  
45h  
46h  
82h  
84h  
86h  
88h  
8Ah  
8Ch  
0050h  
0052h  
0049h  
0031h  
0030h  
0087h  
“P”  
“R”  
“I”  
Major version number, ASCII  
Minor version number, ASCII  
Bit 0 – chip erase supported, 0 – no, 1 – yes  
Bit 1 – erase suspend supported, 0 – no, 1 – yes  
Bit 2 – program suspend supported, 0 – no, 1 – yes  
Bit 3 – simultaneous operations supported,  
0 – no, 1 – yes  
Bit 4 – burst mode read supported, 0 – no, 1 – yes  
Bit 5 – page mode read supported, 0 – no, 1 – yes  
Bit 6 – queued erase supported, 0 – no, 1 – yes  
Bit 7 – protection bits supported, 0 – no, 1 – yes  
47h  
48h  
8Eh  
90h  
0000h (top) or  
0001h (bottom)  
Bit 8 – top (“0”) or bottom (“1”) boot block device undefined  
bits are “0”  
0000h  
Bit 0 – 4-word linear burst with wrap around,  
0 – no, 1 – yes  
Bit 1 – 8-word linear burst with wrap around,  
0 – no, 1 – yes  
Bit 2 – continuos burst, 0 – no, 1 – yes  
Undefined bits are “0”  
49h  
92h  
0000h  
Bit 0 – 4-word page, 0 – no, 1 – yes  
Bit 1 – 8-word page, 0 – no, 1 – yes  
Undefined bits are “0”  
4Ah  
4Bh  
94h  
96h  
0080h  
0003h  
Location of protection register lock byte, the section’s first byte  
# of bytes in the factory prog section  
of prot register – 2*n  
4Ch  
98h  
0003h  
# of bytes in the user prog section of prot  
register – 2*n  
24  
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
AT49SV802A(T) Ordering Information  
I
CC (mA)  
tACC  
(ns)  
Active  
Standby  
Ordering Code  
Package  
Operation Range  
Industrial  
AT49SV802A-80CI  
AT49SV802A-80TI  
48C19  
48T  
80  
80  
25  
0.025  
0.025  
(-40° to 85°C)  
Industrial  
AT49SV802AT-80CI  
AT49SV802AT-80TI  
48C19  
48T  
25  
(-40° to 85°C)  
Package Type  
48C19  
48T  
48-ball, Plastic Chip-Size Ball Grid Array Package (CBGA)  
48-lead, Plastic Thin Small Outline Package (TSOP)  
25  
3522A–FLASH–10/04  
Packaging Information  
48C19 – CBGA  
E
A1 Ball ID  
D
A1  
Top View  
A
Side View  
1.0 REF  
E1  
A1 Ball Corner  
e
1.20 REF  
A
COMMON DIMENSIONS  
(Unit of Measure = mm)  
B
C
D
E
F
MIN  
MAX  
NOM  
6.00  
NOTE  
SYMBOL  
D1  
E
5.90  
6.10  
E1  
D
4.0 TYP  
8.00  
G
H
7.90  
8.10  
D1  
A
5.6 TYP  
e
1.0  
6
5
4
3
2
1
A1  
e
0.22  
Øb  
0.80 BSC  
0.40 TYP  
Bottom View  
Øb  
7/2/03  
DRAWING NO. REV.  
48C19  
TITLE  
2325 Orchard Parkway  
San Jose, CA 95131  
48C19, 48-ball (6 x 8 Array), 0.80 mm Pitch,  
6.0 x 8.0 x 1.0 mm Chip-scale Ball Grid Array Package (CBGA)  
A
R
26  
AT49SV802A(T) [Preliminary]  
3522A–FLASH–10/04  
AT49SV802A(T) [Preliminary]  
48T – TSOP  
PIN 1  
0º ~ 8º  
c
Pin 1 Identifier  
D1  
D
L
b
L1  
e
A2  
E
GAGE PLANE  
A
SEATING PLANE  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
A1  
MIN  
MAX  
1.20  
0.15  
1.05  
20.20  
NOM  
NOTE  
SYMBOL  
A
A1  
A2  
D
0.05  
0.95  
19.80  
18.30  
11.90  
0.50  
1.00  
Notes:  
1. This package conforms to JEDEC reference MO-142, Variation DD.  
2. Dimensions D1 and E do not include mold protrusion. Allowable  
protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side.  
3. Lead coplanarity is 0.10 mm maximum.  
20.00  
18.40  
12.00  
0.60  
D1  
E
18.50 Note 2  
12.10 Note 2  
0.70  
L
L1  
b
0.25 BASIC  
0.22  
0.17  
0.10  
0.27  
0.21  
c
e
0.50 BASIC  
10/18/01  
DRAWING NO. REV.  
48T  
TITLE  
2325 Orchard Parkway  
San Jose, CA 95131  
48T, 48-lead (12 x 20 mm Package) Plastic Thin Small Outline  
Package, Type I (TSOP)  
B
R
27  
3522A–FLASH–10/04  
Atmel Corporation  
Atmel Operations  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 487-2600  
Memory  
RF/Automotive  
Theresienstrasse 2  
Postfach 3535  
74025 Heilbronn, Germany  
Tel: (49) 71-31-67-0  
Fax: (49) 71-31-67-2340  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
Regional Headquarters  
Microcontrollers  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
1150 East Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906, USA  
Tel: 1(719) 576-3300  
Europe  
Atmel Sarl  
Route des Arsenaux 41  
Case Postale 80  
CH-1705 Fribourg  
Switzerland  
Tel: (41) 26-426-5555  
Fax: (41) 26-426-5500  
Fax: 1(719) 540-1759  
Biometrics/Imaging/Hi-Rel MPU/  
High Speed Converters/RF Datacom  
Avenue de Rochepleine  
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BP 70602  
44306 Nantes Cedex 3, France  
Tel: (33) 2-40-18-18-18  
Fax: (33) 2-40-18-19-60  
BP 123  
38521 Saint-Egreve Cedex, France  
Tel: (33) 4-76-58-30-00  
Fax: (33) 4-76-58-34-80  
Asia  
Room 1219  
Chinachem Golden Plaza  
77 Mody Road Tsimshatsui  
East Kowloon  
Hong Kong  
Tel: (852) 2721-9778  
Fax: (852) 2722-1369  
ASIC/ASSP/Smart Cards  
Zone Industrielle  
13106 Rousset Cedex, France  
Tel: (33) 4-42-53-60-00  
Fax: (33) 4-42-53-60-01  
1150 East Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906, USA  
Tel: 1(719) 576-3300  
Japan  
9F, Tonetsu Shinkawa Bldg.  
1-24-8 Shinkawa  
Chuo-ku, Tokyo 104-0033  
Japan  
Tel: (81) 3-3523-3551  
Fax: (81) 3-3523-7581  
Fax: 1(719) 540-1759  
Scottish Enterprise Technology Park  
Maxwell Building  
East Kilbride G75 0QR, Scotland  
Tel: (44) 1355-803-000  
Fax: (44) 1355-242-743  
Literature Requests  
www.atmel.com/literature  
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3522A–FLASH–10/04  
/xM  

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