AT93C46A-10PA-2.7C [ATMEL]

EEPROM, 64X16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, MS-001BA, DIP-8;
AT93C46A-10PA-2.7C
型号: AT93C46A-10PA-2.7C
厂家: ATMEL    ATMEL
描述:

EEPROM, 64X16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, MS-001BA, DIP-8

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 光电二极管
文件: 总13页 (文件大小:325K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Features  
Low-voltage and Standard-voltage Operation  
– 5.0 (VCC = 4.5V to 5.5V)  
– 2.7 (VCC = 2.7V to 5.5V)  
Three-wire Serial Interface  
2 MHz Clock Rate (5V) Compatibility  
Self-timed Write Cycle (10 ms max)  
High Reliability  
– Endurance: 1 Million Write Cycles  
– Data Retention: 100 Years  
Lead-free/Halogen-free Devices Available  
8-lead PDIP and 8-lead JEDEC SOIC Packages  
Three-wire  
Automotive  
Serial EEPROM  
1K (64 x 16)  
Description  
The AT93C46A provides 1024 bits of serial electrically-erasable programmable read-  
only memory (EEPROM) organized as 64 words of 16 bits each. The device is opti-  
mized for use in many automotive applications where low-power and low-voltage  
operation are essential. The AT93C46A is available in space-saving 8-lead PDIP and  
8-lead JEDEC SOIC packages.  
AT93C46A  
The AT93C46A is enabled through the Chip Select pin (CS) and accessed via a three-  
wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock  
(SK). Upon receiving a Read instruction at DI, the address is decoded and the data is  
clocked out serially on the data output pin DO. The write cycle is completely self-timed  
and no separate erase cycle is required before write. The write cycle is only enabled  
when the part is in the erase/write enable state. When CS is brought high following the  
initiation of a write cycle, the DO pin outputs the read/busy status of the part.  
The AT93C46A is available in 4.5V to 5.5V and 2.7V to 5.5V versions.  
Table 1. Pin Configurations  
8-lead PDIP  
Pin Name  
Function  
CS  
Chip Select  
CS  
SK  
DI  
1
2
3
4
8
7
6
5
VCC  
DC  
SK  
Serial Data Clock  
Serial Data Input  
Serial Data Output  
Ground  
DI  
NC  
DO  
GND  
DO  
GND  
VCC  
Power Supply  
8-lead SOIC  
CS  
1
2
3
4
8
VCC  
SK  
DI  
7
6
5
DC  
NC  
DO  
GND  
Rev. 3450B–SEEPR–10/04  
Absolute Maximum Ratings*  
*NOTICE:  
Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent dam-  
age to the device. This is a stress rating only and  
functional operation of the device at these or any  
other conditions beyond those indicated in the  
operational sections of this specification is not  
implied. Exposure to absolute maximum rating  
conditions for extended periods may affect  
device reliability.  
Operating Temperature......................................−55°C to +125°C  
Storage Temperature .........................................−65°C to +150°C  
Voltage on Any Pin  
with Respect to Ground........................................ −1.0V to +7.0V  
Maximum Operating Voltage .......................................... 6.25V  
DC Output Current........................................................ 5.0 mA  
Figure 1. Block Diagram  
MEMORY ARRAY  
64 x 16  
ADDRESS  
DECODER  
DATA  
REGISTER  
OUTPUT  
BUFFER  
MODE  
DECODE  
LOGIC  
CLOCK  
GENERATOR  
2
AT93C46A  
3450B–SEEPR–10/04  
AT93C46A  
Table 2. Pin Capacitance(1)  
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted)  
Symbol  
COUT  
CIN  
Test Conditions  
Max  
5
Units  
pF  
Conditions  
VOUT = 0V  
VIN = 0V  
Output Capacitance (DO)  
Input Capacitance (CS, SK, DI)  
5
pF  
Notes: 1. This parameter is characterized and is not 100% tested.  
Table 3. DC Characteristics  
Applicable over recommended operating range from: TA = 40°C to +125°C, VCC = +2.7V to +5.5V,  
(unless otherwise noted)  
Symbol  
VCC1  
Parameter  
Test Condition  
Min  
2.7  
4.5  
Typ  
Max  
5.5  
Unit  
V
Supply Voltage  
Supply Voltage  
VCC2  
5.5  
V
Read at 1.0 MHz  
Write at 1.0 MHz  
CS = 0V  
0.5  
0.5  
6.0  
17  
2.0  
mA  
mA  
µA  
µA  
µA  
µA  
V
ICC  
Supply Current  
VCC = 5.0V  
2.0  
ISB1  
ISB2  
IIL  
Standby Current  
Standby Current  
Input Leakage  
VCC = 2.7V  
10.0  
30  
VCC = 5.0V  
CS = 0V  
VIN = 0V to VCC  
VIN = 0V to VCC  
0.1  
0.1  
3.0  
IOL  
Output Leakage  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
3.0  
1
VIL1  
0.6  
0.8  
2.7V VCC 5.5V  
2.7V VCC 5.5V  
1
VIH1  
2.0  
VCC + 1  
0.4  
V
VOL1  
VOH1  
IOL = 2.1 mA  
V
IOH = 0.4 mA  
2.4  
V
Note:  
1. VIL min and VIH max are reference only and are not tested.  
3
3450B–SEEPR–10/04  
Table 4. AC Characteristics  
Applicable over recommended operating range from TAE = 40°C to + 125°C, VCC = As Specified, CL = 1 TTL Gate and  
100 pF (unless otherwise noted)  
Symbol  
Parameter  
Test Condition  
Min  
Typ  
Max  
Units  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
0
0
2
1
fSK  
SK Clock Frequency  
MHz  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
250  
250  
tSKH  
tSKL  
tCS  
SK High Time  
SK Low Time  
ns  
ns  
ns  
ns  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
250  
250  
Minimum CS  
Low Time  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
250  
250  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
50  
50  
tCSS  
CS Setup Time  
Relative to SK  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
100  
100  
tDIS  
tCSH  
tDIH  
DI Setup Time  
CS Hold Time  
DI Hold Time  
Relative to SK  
Relative to SK  
Relative to SK  
ns  
ns  
ns  
0
4.5V VCC 5.5V  
2.7V VCC 5.5V  
100  
100  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
250  
500  
tPD1  
tPD0  
tSV  
Output Delay to “1”  
Output Delay to “0”  
CS to Status Valid  
AC Test  
AC Test  
AC Test  
ns  
ns  
ns  
ns  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
250  
500  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
250  
250  
CS to DO in High  
Impedance  
AC Test  
CS = VIL  
4.5V VCC 5.5V  
2.7V VCC 5.5V  
100  
150  
tDF  
tWP  
Write Cycle Time  
2.7V VCC 5.5V  
0.1  
1M  
3
10  
ms  
Endurance1  
5.0V, 25°C, Page Mode  
Write Cycles  
Note:  
1. This parameter is characterized and is not 100% tested.  
4
AT93C46A  
3450B–SEEPR–10/04  
AT93C46A  
Functional  
Description  
The AT93C46A is accessed via a simple and versatile three-wire serial communication  
interface. Device operation is controlled by seven instructions issued by the host pro-  
cessor. A valid instruction starts with a rising edge of CS and consists of a start bit (logic  
“1”) followed by the appropriate op code and the desired memory address location.  
Table 5. Instruction Set for the AT93C46A  
Address  
Instruction  
READ  
SB  
1
Op Code  
x 16  
Comments  
10  
00  
11  
01  
00  
00  
00  
A5 A0  
11XXXX  
A5 A0  
A5 A0  
10XXXX  
01XXXX  
00XXXX  
Reads data stored in memory, at specified address  
Write enable must precede all programming modes  
Erase memory location An A0  
EWEN  
ERASE  
WRITE  
ERAL  
1
1
1
Writes memory location An A0  
1
Erases all memory locations. Valid only at VCC = 4.5V to 5.5V  
Writes all memory locations. Valid only at VCC = 4.5V to 5.5V  
Disables all programming instructions  
WRAL  
1
EWDS  
1
READ (READ): The Read (READ) instruction contains the address code for the mem-  
ory location to be read. After the instruction and address are decoded, data from the  
selected memory location is available at the serial output pin DO. Output data changes  
are synchronized with the rising edges of serial clock SK. It should be noted that a  
dummy bit (logic “0”) precedes the 16-bit data output string.  
ERASE/WRITE ENABLE (EWEN): To assure data integrity, the part automatically goes  
into the Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write  
Enable (EWEN) instruction must be executed first before any programming instructions  
can be carried out. Please note that once in the EWEN state, programming remains  
enabled until an EWDS instruction is executed or VCC power is removed from the part.  
ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified  
memory location to the logical “1” state. The self-timed erase cycle starts once the  
Erase instruction and address are decoded. The DO pin outputs the Ready/Busy status  
of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). A  
logic “1” at pin DO indicates that the selected memory location has been erased, and the  
part is ready for another instruction.  
WRITE (WRITE): The Write (WRITE) instruction contains the 16 bits of data to be writ-  
ten into the specified memory location. The self-timed programming cycle, tWP, starts  
after the last bit of data is received at serial data input pin DI. The DO pin outputs the  
read/busy status of the part if CS is brought high after being kept low for a minimum of  
250 ns (tCS). A logic “0” at DO indicates that programming is still in progress. A logic “1”  
indicates that the memory location at the specified address has been written with the  
data pattern contained in the instruction and the part is ready for further instructions. A  
Ready/Busy status cannot be obtained if the CS is brought high after the end of the self-  
timed programming cycle, tWP.  
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the mem-  
ory array to the logic “1” state and is primarily used for testing purposes. The DO pin  
outputs the ready/busy status of the part if CS is brought high after being kept low for a  
minimum of 250 ns (tCS). The ERAL instruction is valid only at VCC = 5.0V 10%.  
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations  
with the data patterns specified in the instruction. The DO pin outputs the Ready/Busy  
5
3450B–SEEPR–10/04  
status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS).  
The WRAL instruction is valid only at VCC = 5.0V 10%.  
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the  
Erase/Write Disable (EWDS) instruction disables all programming modes and should be  
executed after all programming operations. The operation of the Read instruction is  
independent of both the EWEN and EWDS instructions and can be executed at any  
time.  
Timing Diagrams  
Figure 2. Synchronous Data Timing  
µ
Note:  
1. This is the minimum SK period.  
Table 6. Organization Key for Timing Diagrams  
AT93C46A  
x 16  
I/O  
AN  
DN  
A5  
D15  
6
AT93C46A  
3450B–SEEPR–10/04  
AT93C46A  
Figure 3. READ Timing  
tCS  
HIGH IMPEDANCE  
Figure 4. EWEN Timing1  
tCS  
CS  
SK  
DI  
...  
1
0
0
1
1
Note:  
1. Requires a minimum of nine clock cycles  
Figure 5. EWDS Timing1  
tCS  
CS  
SK  
DI  
...  
0
0
0
1
0
Note:  
1. Requires a minimum of nine clock cycles  
7
3450B–SEEPR–10/04  
Figure 6. WRITE Timing  
tCS  
CS  
SK  
DI  
...  
...  
AN  
DN  
1
0
1
A0  
D0  
HIGH IMPEDANCE  
BUSY  
READY  
DO  
tWP  
Figure 7. WRAL Timing(1,2)  
tCS  
CS  
SK  
DI  
1
0
0
0
1
...  
DN ... D0  
BUSY  
HIGH IMPEDANCE  
DO  
READY  
tWP  
Notes: 1. Valid only at VCC = 4.5V to 5.5V  
2. Requires a minimum of nine clock cycles  
8
AT93C46A  
3450B–SEEPR–10/04  
AT93C46A  
Figure 8. ERASE Timing  
tCS  
CS  
STANDBY  
CHECK  
STATUS  
SK  
A0  
DI  
1
1
1
AN  
...  
AN-1 AN-2  
tDF  
tSV  
HIGH IMPEDANCE  
HIGH IMPEDANCE  
BUSY  
DO  
READY  
tWP  
Figure 9. ERAL Timing1  
tCS  
CS  
STANDBY  
CHECK  
STATUS  
SK  
DI  
1
0
0
1
0
tDF  
tSV  
BUSY  
HIGH IMPEDANCE  
HIGH IMPEDANCE  
DO  
READY  
tWP  
Note:  
1. Valid only at VCC = 4.5V to 5.5V  
9
3450B–SEEPR–10/04  
Ordering Information  
Ordering Code  
Package  
Operation Range  
AT93C46A-10PA-5.0C  
AT93C46A-10SA-5.0C  
8P3  
8S1  
Automotive  
(40°C to 125°C)  
AT93C46A-10PA-2.7C  
AT93C46A-10SA-2.7C  
8P3  
8S1  
Automotive  
(40°C to 125°C)  
Note:  
For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in  
Table 4 on page 4 and Table 3 on page 3  
Package Type  
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)  
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)  
Options  
8P3  
8S1  
5.0  
2.7  
Low Voltage (4.5V to 5.5V)  
Low Voltage (2.7V to 5.5V)  
10  
AT93C46A  
3450B–SEEPR–10/04  
AT93C46A  
Packaging Information  
8P3 – PDIP  
E
1
E1  
N
Top View  
c
eA  
End View  
COMMON DIMENSIONS  
(Unit of Measure = inches)  
D
e
MIN  
MAX  
NOM  
NOTE  
SYMBOL  
D1  
A2 A  
A
0.210  
0.195  
0.022  
0.070  
0.045  
0.014  
0.400  
2
A2  
b
0.115  
0.014  
0.045  
0.030  
0.008  
0.355  
0.005  
0.300  
0.240  
0.130  
0.018  
0.060  
0.039  
0.010  
0.365  
5
6
6
b2  
b3  
c
D
3
3
4
3
b2  
L
D1  
E
b3  
4 PLCS  
0.310  
0.250  
0.325  
0.280  
b
E1  
e
0.100 BSC  
0.300 BSC  
0.115  
Side View  
eA  
L
4
0.130  
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.  
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.  
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.  
4. E and eA measured with the leads constrained to be perpendicular to datum.  
5. Pointed or rounded lead tips are preferred to ease insertion.  
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).  
01/09/02  
TITLE  
DRAWING NO.  
REV.  
2325 Orchard Parkway  
San Jose, CA 95131  
8P3, 8-lead, 0.300" Wide Body, Plastic Dual  
In-line Package (PDIP)  
8P3  
B
R
11  
3450B–SEEPR–10/04  
8S1 – JEDEC SOIC  
C
1
E
E1  
L
N
Top View  
End View  
e
B
COMMON DIMENSIONS  
(Unit of Measure = mm)  
A
MIN  
1.35  
0.10  
MAX  
1.75  
0.25  
NOM  
NOTE  
SYMBOL  
A1  
A
A1  
b
0.31  
0.17  
4.80  
3.81  
5.79  
0.51  
0.25  
5.00  
3.99  
6.20  
C
D
E1  
E
D
Side View  
e
1.27 BSC  
L
0.40  
0˚  
1.27  
8˚  
Note:  
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.  
10/7/03  
REV.  
TITLE  
DRAWING NO.  
1150 E. Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing  
8S1  
B
R
Small Outline (JEDEC SOIC)  
12  
AT93C46A  
3450B–SEEPR–10/04  
Atmel Corporation  
Atmel Operations  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 487-2600  
Memory  
RF/Automotive  
Theresienstrasse 2  
Postfach 3535  
74025 Heilbronn, Germany  
Tel: (49) 71-31-67-0  
Fax: (49) 71-31-67-2340  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
Regional Headquarters  
Microcontrollers  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
1150 East Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906, USA  
Tel: 1(719) 576-3300  
Europe  
Atmel Sarl  
Route des Arsenaux 41  
Case Postale 80  
CH-1705 Fribourg  
Switzerland  
Tel: (41) 26-426-5555  
Fax: (41) 26-426-5500  
Fax: 1(719) 540-1759  
Biometrics/Imaging/Hi-Rel MPU/  
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44306 Nantes Cedex 3, France  
Tel: (33) 2-40-18-18-18  
Fax: (33) 2-40-18-19-60  
BP 123  
38521 Saint-Egreve Cedex, France  
Tel: (33) 4-76-58-30-00  
Fax: (33) 4-76-58-34-80  
Asia  
Room 1219  
Chinachem Golden Plaza  
77 Mody Road Tsimshatsui  
East Kowloon  
Hong Kong  
Tel: (852) 2721-9778  
Fax: (852) 2722-1369  
ASIC/ASSP/Smart Cards  
Zone Industrielle  
13106 Rousset Cedex, France  
Tel: (33) 4-42-53-60-00  
Fax: (33) 4-42-53-60-01  
1150 East Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906, USA  
Tel: 1(719) 576-3300  
Japan  
9F, Tonetsu Shinkawa Bldg.  
1-24-8 Shinkawa  
Chuo-ku, Tokyo 104-0033  
Japan  
Tel: (81) 3-3523-3551  
Fax: (81) 3-3523-7581  
Fax: 1(719) 540-1759  
Scottish Enterprise Technology Park  
Maxwell Building  
East Kilbride G75 0QR, Scotland  
Tel: (44) 1355-803-000  
Fax: (44) 1355-242-743  
Literature Requests  
www.atmel.com/literature  
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3450B–SEEPR–10/04  

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