AT93C46A-10PA-2.7C [ATMEL]
EEPROM, 64X16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, MS-001BA, DIP-8;型号: | AT93C46A-10PA-2.7C |
厂家: | ATMEL |
描述: | EEPROM, 64X16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, MS-001BA, DIP-8 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 光电二极管 |
文件: | 总13页 (文件大小:325K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Features
• Low-voltage and Standard-voltage Operation
– 5.0 (VCC = 4.5V to 5.5V)
– 2.7 (VCC = 2.7V to 5.5V)
• Three-wire Serial Interface
• 2 MHz Clock Rate (5V) Compatibility
• Self-timed Write Cycle (10 ms max)
• High Reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
• Lead-free/Halogen-free Devices Available
• 8-lead PDIP and 8-lead JEDEC SOIC Packages
Three-wire
Automotive
Serial EEPROM
1K (64 x 16)
Description
The AT93C46A provides 1024 bits of serial electrically-erasable programmable read-
only memory (EEPROM) organized as 64 words of 16 bits each. The device is opti-
mized for use in many automotive applications where low-power and low-voltage
operation are essential. The AT93C46A is available in space-saving 8-lead PDIP and
8-lead JEDEC SOIC packages.
AT93C46A
The AT93C46A is enabled through the Chip Select pin (CS) and accessed via a three-
wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock
(SK). Upon receiving a Read instruction at DI, the address is decoded and the data is
clocked out serially on the data output pin DO. The write cycle is completely self-timed
and no separate erase cycle is required before write. The write cycle is only enabled
when the part is in the erase/write enable state. When CS is brought high following the
initiation of a write cycle, the DO pin outputs the read/busy status of the part.
The AT93C46A is available in 4.5V to 5.5V and 2.7V to 5.5V versions.
Table 1. Pin Configurations
8-lead PDIP
Pin Name
Function
CS
Chip Select
CS
SK
DI
1
2
3
4
8
7
6
5
VCC
DC
SK
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
NC
DO
GND
DO
GND
VCC
Power Supply
8-lead SOIC
CS
1
2
3
4
8
VCC
SK
DI
7
6
5
DC
NC
DO
GND
Rev. 3450B–SEEPR–10/04
Absolute Maximum Ratings*
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Operating Temperature......................................−55°C to +125°C
Storage Temperature .........................................−65°C to +150°C
Voltage on Any Pin
with Respect to Ground........................................ −1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Figure 1. Block Diagram
MEMORY ARRAY
64 x 16
ADDRESS
DECODER
DATA
REGISTER
OUTPUT
BUFFER
MODE
DECODE
LOGIC
CLOCK
GENERATOR
2
AT93C46A
3450B–SEEPR–10/04
AT93C46A
Table 2. Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted)
Symbol
COUT
CIN
Test Conditions
Max
5
Units
pF
Conditions
VOUT = 0V
VIN = 0V
Output Capacitance (DO)
Input Capacitance (CS, SK, DI)
5
pF
Notes: 1. This parameter is characterized and is not 100% tested.
Table 3. DC Characteristics
Applicable over recommended operating range from: TA = −40°C to +125°C, VCC = +2.7V to +5.5V,
(unless otherwise noted)
Symbol
VCC1
Parameter
Test Condition
Min
2.7
4.5
Typ
Max
5.5
Unit
V
Supply Voltage
Supply Voltage
VCC2
5.5
V
Read at 1.0 MHz
Write at 1.0 MHz
CS = 0V
0.5
0.5
6.0
17
2.0
mA
mA
µA
µA
µA
µA
V
ICC
Supply Current
VCC = 5.0V
2.0
ISB1
ISB2
IIL
Standby Current
Standby Current
Input Leakage
VCC = 2.7V
10.0
30
VCC = 5.0V
CS = 0V
VIN = 0V to VCC
VIN = 0V to VCC
0.1
0.1
3.0
IOL
Output Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
3.0
1
VIL1
−0.6
0.8
2.7V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
1
VIH1
2.0
VCC + 1
0.4
V
VOL1
VOH1
IOL = 2.1 mA
V
IOH = −0.4 mA
2.4
V
Note:
1. VIL min and VIH max are reference only and are not tested.
3
3450B–SEEPR–10/04
Table 4. AC Characteristics
Applicable over recommended operating range from TAE = −40°C to + 125°C, VCC = As Specified, CL = 1 TTL Gate and
100 pF (unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
0
0
2
1
fSK
SK Clock Frequency
MHz
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
250
tSKH
tSKL
tCS
SK High Time
SK Low Time
ns
ns
ns
ns
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
250
Minimum CS
Low Time
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
250
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
50
50
tCSS
CS Setup Time
Relative to SK
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
100
100
tDIS
tCSH
tDIH
DI Setup Time
CS Hold Time
DI Hold Time
Relative to SK
Relative to SK
Relative to SK
ns
ns
ns
0
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
100
100
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
500
tPD1
tPD0
tSV
Output Delay to “1”
Output Delay to “0”
CS to Status Valid
AC Test
AC Test
AC Test
ns
ns
ns
ns
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
500
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
250
CS to DO in High
Impedance
AC Test
CS = VIL
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
100
150
tDF
tWP
Write Cycle Time
2.7V ≤ VCC ≤ 5.5V
0.1
1M
3
10
ms
Endurance1
5.0V, 25°C, Page Mode
Write Cycles
Note:
1. This parameter is characterized and is not 100% tested.
4
AT93C46A
3450B–SEEPR–10/04
AT93C46A
Functional
Description
The AT93C46A is accessed via a simple and versatile three-wire serial communication
interface. Device operation is controlled by seven instructions issued by the host pro-
cessor. A valid instruction starts with a rising edge of CS and consists of a start bit (logic
“1”) followed by the appropriate op code and the desired memory address location.
Table 5. Instruction Set for the AT93C46A
Address
Instruction
READ
SB
1
Op Code
x 16
Comments
10
00
11
01
00
00
00
A5 − A0
11XXXX
A5 − A0
A5 − A0
10XXXX
01XXXX
00XXXX
Reads data stored in memory, at specified address
Write enable must precede all programming modes
Erase memory location An − A0
EWEN
ERASE
WRITE
ERAL
1
1
1
Writes memory location An − A0
1
Erases all memory locations. Valid only at VCC = 4.5V to 5.5V
Writes all memory locations. Valid only at VCC = 4.5V to 5.5V
Disables all programming instructions
WRAL
1
EWDS
1
READ (READ): The Read (READ) instruction contains the address code for the mem-
ory location to be read. After the instruction and address are decoded, data from the
selected memory location is available at the serial output pin DO. Output data changes
are synchronized with the rising edges of serial clock SK. It should be noted that a
dummy bit (logic “0”) precedes the 16-bit data output string.
ERASE/WRITE ENABLE (EWEN): To assure data integrity, the part automatically goes
into the Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write
Enable (EWEN) instruction must be executed first before any programming instructions
can be carried out. Please note that once in the EWEN state, programming remains
enabled until an EWDS instruction is executed or VCC power is removed from the part.
ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified
memory location to the logical “1” state. The self-timed erase cycle starts once the
Erase instruction and address are decoded. The DO pin outputs the Ready/Busy status
of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). A
logic “1” at pin DO indicates that the selected memory location has been erased, and the
part is ready for another instruction.
WRITE (WRITE): The Write (WRITE) instruction contains the 16 bits of data to be writ-
ten into the specified memory location. The self-timed programming cycle, tWP, starts
after the last bit of data is received at serial data input pin DI. The DO pin outputs the
read/busy status of the part if CS is brought high after being kept low for a minimum of
250 ns (tCS). A logic “0” at DO indicates that programming is still in progress. A logic “1”
indicates that the memory location at the specified address has been written with the
data pattern contained in the instruction and the part is ready for further instructions. A
Ready/Busy status cannot be obtained if the CS is brought high after the end of the self-
timed programming cycle, tWP.
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the mem-
ory array to the logic “1” state and is primarily used for testing purposes. The DO pin
outputs the ready/busy status of the part if CS is brought high after being kept low for a
minimum of 250 ns (tCS). The ERAL instruction is valid only at VCC = 5.0V 10%.
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations
with the data patterns specified in the instruction. The DO pin outputs the Ready/Busy
5
3450B–SEEPR–10/04
status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS).
The WRAL instruction is valid only at VCC = 5.0V 10%.
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the
Erase/Write Disable (EWDS) instruction disables all programming modes and should be
executed after all programming operations. The operation of the Read instruction is
independent of both the EWEN and EWDS instructions and can be executed at any
time.
Timing Diagrams
Figure 2. Synchronous Data Timing
µ
Note:
1. This is the minimum SK period.
Table 6. Organization Key for Timing Diagrams
AT93C46A
x 16
I/O
AN
DN
A5
D15
6
AT93C46A
3450B–SEEPR–10/04
AT93C46A
Figure 3. READ Timing
tCS
HIGH IMPEDANCE
Figure 4. EWEN Timing1
tCS
CS
SK
DI
...
1
0
0
1
1
Note:
1. Requires a minimum of nine clock cycles
Figure 5. EWDS Timing1
tCS
CS
SK
DI
...
0
0
0
1
0
Note:
1. Requires a minimum of nine clock cycles
7
3450B–SEEPR–10/04
Figure 6. WRITE Timing
tCS
CS
SK
DI
...
...
AN
DN
1
0
1
A0
D0
HIGH IMPEDANCE
BUSY
READY
DO
tWP
Figure 7. WRAL Timing(1,2)
tCS
CS
SK
DI
1
0
0
0
1
...
DN ... D0
BUSY
HIGH IMPEDANCE
DO
READY
tWP
Notes: 1. Valid only at VCC = 4.5V to 5.5V
2. Requires a minimum of nine clock cycles
8
AT93C46A
3450B–SEEPR–10/04
AT93C46A
Figure 8. ERASE Timing
tCS
CS
STANDBY
CHECK
STATUS
SK
A0
DI
1
1
1
AN
...
AN-1 AN-2
tDF
tSV
HIGH IMPEDANCE
HIGH IMPEDANCE
BUSY
DO
READY
tWP
Figure 9. ERAL Timing1
tCS
CS
STANDBY
CHECK
STATUS
SK
DI
1
0
0
1
0
tDF
tSV
BUSY
HIGH IMPEDANCE
HIGH IMPEDANCE
DO
READY
tWP
Note:
1. Valid only at VCC = 4.5V to 5.5V
9
3450B–SEEPR–10/04
Ordering Information
Ordering Code
Package
Operation Range
AT93C46A-10PA-5.0C
AT93C46A-10SA-5.0C
8P3
8S1
Automotive
(−40°C to 125°C)
AT93C46A-10PA-2.7C
AT93C46A-10SA-2.7C
8P3
8S1
Automotive
(−40°C to 125°C)
Note:
For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in
Table 4 on page 4 and Table 3 on page 3
Package Type
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
Options
8P3
8S1
−5.0
−2.7
Low Voltage (4.5V to 5.5V)
Low Voltage (2.7V to 5.5V)
10
AT93C46A
3450B–SEEPR–10/04
AT93C46A
Packaging Information
8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
MIN
MAX
NOM
NOTE
SYMBOL
D1
A2 A
A
0.210
0.195
0.022
0.070
0.045
0.014
0.400
2
A2
b
0.115
0.014
0.045
0.030
0.008
0.355
0.005
0.300
0.240
0.130
0.018
0.060
0.039
0.010
0.365
5
6
6
b2
b3
c
D
3
3
4
3
b2
L
D1
E
b3
4 PLCS
0.310
0.250
0.325
0.280
b
E1
e
0.100 BSC
0.300 BSC
0.115
Side View
eA
L
4
0.130
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
8P3
B
R
11
3450B–SEEPR–10/04
8S1 – JEDEC SOIC
C
1
E
E1
L
N
∅
Top View
End View
e
B
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.35
0.10
MAX
1.75
0.25
NOM
NOTE
SYMBOL
A1
A
–
–
A1
b
0.31
0.17
4.80
3.81
5.79
–
0.51
0.25
5.00
3.99
6.20
C
D
E1
E
–
–
D
–
–
Side View
e
1.27 BSC
L
0.40
0˚
–
–
1.27
8˚
∅
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
10/7/03
REV.
TITLE
DRAWING NO.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
8S1
B
R
Small Outline (JEDEC SOIC)
12
AT93C46A
3450B–SEEPR–10/04
Atmel Corporation
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Tel: 1(408) 441-0311
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Tel: (49) 71-31-67-0
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Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
Regional Headquarters
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Printed on recycled paper.
3450B–SEEPR–10/04
相关型号:
AT93C46A-10PI2.7
64X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, MS-001BA, DIP-8
ATMEL
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