ATA2525S536C-DDW [ATMEL]
Telecom Circuit, 1-Func, DIE-11;
| 型号： | ATA2525S536C-DDW |
| 厂家： | 
ATMEL |
| 描述： | Telecom Circuit, 1-Func, DIE-11 ATM 异步传输模式 电信 电信集成电路 |
| 文件： | 总12页 (文件大小：511K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• No External Components Except PIN Diode
• Supply-voltage Range: 4.5V to 5.5V
• High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC)
• High Immunity Against Disturbances from Daylight and Lamps
• Small Size and Innovative Pad Layout
• Available for Carrier Frequencies between 33 kHz to 40 kHz; Adjusted
by Zener Diode Fusing
IR Receiver
ASSP
• TTL and CMOS Compatible
• Suitable Minimum Burst Length 10 Pulses/Burst
Applications
• Home Entertainment Applications
• Home Appliances
• Remote Control Equipment
ATA2525
1. Description
The IC ATA2525 is a complete IR receiver for data communication that was devel-
oped and optimized for use in carrier-frequency-modulated transmission applications.
The IC combines small size with high sensitivity as well as high suppression of noise
from daylight and lamps. An innovative and patented pad layout offers unique flexibil-
ity for assembly of IR receiver modules. The ATA2525 is available with standard
carrier frequencies (33, 36, 37, 38, 40 kHz) and 3 different noise suppression regula-
tion types (standard, lamp, noise) covering requirements of different high-volume
remote control solutions (please refer to selection guide available for
ATA2525/ATA2526). The ATA2525 operates in a supply voltage range of 4.5V to
5.5V.
The function of ATA2525 can be described using the block diagram (see Figure 1-1
on page 2). The input stage meets two main functions. First, it provides a suitable bias
voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed
into a voltage by a special circuit which is optimized for low-noise applications. After
amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned
integrated narrow bandpass filter with a center frequency f0 which is equivalent to the
chosen carrier frequency of the input signal. The demodulator is used to convert the
input burst signal into a digital envelope output pulse and to evaluate the signal infor-
mation quality, i.e., unwanted pulses will be suppressed at the output pin. All this is
done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental condition (ambient light, modulated lamps etc.).
Other special features are used to adapt to the current application to secure best
transmission quality.
4854G–AUTO–05/10
Figure 1-1. Block Diagram
VS
IN
OUT
CGA and
Filter
Micro-
controller
Demodulator
Input
Oscillator
AGC/ATC and Digital Control
Carrier Frequency f
0
ATA2525
Modulated IR Signal
min 10 Pulses
GND
2
ATA2525
4854G–AUTO–05/10
ATA2525
2. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
VS
Value
–0.3 to +6
3
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
–0.3 to VS
0.75
Input DC current at VS = 5V
Output voltage
mA
V
VO
–0.3 to VS
10
Output current
IO
mA
°C
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
–25 to +85
–40 to +125
°C
mW
30
3. Electrical Characteristics
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No. Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
1
Supply
1.1
1.2
2
Supply-voltage range
Supply current
Output
VS
IS
4.5
0.8
5
5.5
1.4
V
C
B
I
IN = 0
1.1
mA
T
amb = 25°C;
2.1
Internal pull-up resistor
RPU
40
8
k
A
see Figure 5-7 on page 8
IL = 2 mA;
see Figure 5-7 on page 8
2.2
2.3
2.4
3
Output voltage low
Output voltage high
Output current clamping
Input
VOL
VOH
IOCL
250
VS
mV
V
B
A
B
Tamb = 25°C
VS – 0.25
R2 = 0;
see Figure 5-7 on page 8
mA
V
IN = 0;
3.1
Input DC current
IIN_DCMAX
IIN_DCMAX
–85
µA
µA
C
B
see Figure 5-7 on page 8
Input DC current;
see Figure 5-1 on page 5
VIN = 0; Vs = 5V,
Tamb = 25°C
3.2
–530
–960
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
3
4854G–AUTO–05/10
3. Electrical Characteristics (Continued)
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No. Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
Test signal:
see Figure 5-6 on page 7
VS = 5V,
Tamb = 25°C,
IIN_DC = 1 µA;
square pp,
burst N = 16,
Minimum detection
threshold current;
see Figure 5-2 on page 5
3.3
IEemin
–600
pA
B
f = f0; tPER = 10 ms,
see Figure 5-6 on page 7;
BER = 50(1)
Test signal:
see Figure 5-6 on page 7
VS = 5V,
Tamb = 25°C,
IIN_DC = 1 µA,
square pp,
Minimum detection
threshold current with AC
current disturbance
IIN_AC100 = 3 µA at 100
Hz
3.4
IEemin
–850
pA
C
burst N = 16,
f = f0; tPER = 10 ms,
see Figure 5-6 on page 7;
BER = 50%(1)
Test signal:
see Figure 5-6 on page 7
VS = 5V, Tamb = 25°C,
IIN_DC = 1 µA;
square pp,
burst N = 16,
Maximum detection
threshold current
3.5
IEemax
–400
µA
D
f = f0; tPER = 10 ms,
see Figure 5-6 on page 7;
BER = 5%(1)
4
Controlled Amplifier and Filter
Maximum value of variable
gain (CGA)
4.1
VS = 5V, Tamb = 25°C
GVARMAX
GVARMIN
GMAX
f0_FUSE
f0
51
–5
71
f0
dB
dB
dB
%
D
D
D
A
C
B
Minimum value of variable
gain (CGA)
4.2
4.3
4.4
4.5
4.6
VS = 5V, Tamb = 25°C
VS = 5V, Tamb = 25°C
VS = 5V, Tamb = 25°C
Total internal
amplification(2)
Center frequency fusing
accuracy of bandpass
–3
+3
Overall accuracy center
frequency of bandpass
–6.7
f0
+4.1
%
–3 dB; f0 = 38 kHz;
see Figure 5-4 on page 6
BPF bandwidth
B
3.5
kHz
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4
ATA2525
4854G–AUTO–05/10
ATA2525
4. Reliability
Electrical qualification (1000h at 150°C) in molded SO8 plastic package
5. Typical Electrical Curves at Tamb = 25°C
Figure 5-1. VIN versus IIN_DC, VS = 5V
3
2.94
2.79
2.44
2
1
0
1.14
0
0.1
1.0
10.0
100.0
1000.0
IIN_DC (µA)
Figure 5-2.
IEemin versus IIN_DC, VS = 5V
100
10
3.6
1
1.2
0.49
0
0.1
1
10
100
1000
IIN_DC (µA)
5
4854G–AUTO–05/10
Figure 5-3. Data Transmission Rate, VS = 5V
1750
1418
Standard type
1493
1500
1250
1000
750
500
250
0
1119
735
931
693
Lamp type
Noise type
980
730
547
28
32
36
40
44
f0 (kHz)
Figure 5-4. Typical Bandpass Curve
1.1
1.0
0.9
0.8
-3dB
0.7
-3dB
0.6
0.5
0.4
Δf
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f0/f; f = –3 dB values. Example: Q = 1/(1.047 – 0.954) = 11
6
ATA2525
4854G–AUTO–05/10
ATA2525
Figure 5-5. Illustration of Used Terms
1066μs
Period (P = 16)
533μs
7
Burst (N = 16 Pulses)
IN
1
16
7
7
33μs
tDON
tDOFF
Envelope 1
533μs
OUT
Envelope 16
17056μs/Data Word
OUT
Telegram Pause
Data Word
17ms
Data Word
t
TREP = 62ms
Example: f = 30 kHz, burst with 16 pulses, 16 periods
Figure 5-6. Test Circuit
I
Ee = ΔU1/400kΩ
ΔU1
V
DD = 5V
400kΩ
1nF
IIN_DC
R1 = 220Ω
VS
IIN
IEe
20kΩ
1nF
IN
ATA2525 OUT
VPULSE
IPIN_AC100
GND
ΔU2
+
IIN_DC = ΔU2/40kΩ
20kΩ
f0
C1 = 4.7μF
16
-
DC
+
tPER = 10ms
7
4854G–AUTO–05/10
Figure 5-7. Application Circuit
VDD = 5V
(1) optional
R1 = 220Ω
R2(1) > 2.4kΩ
RPU = 40kΩ
IS
VS
IOCL
IL
IN
ATA2525
IN
Microcontroller
IIN
OUT
GND
VIN
VO
+
IIN_DC IEe
C
1 = 4.7μF
C2(1) ≤ 470pF
8
ATA2525
4854G–AUTO–05/10
ATA2525
6. Chip Dimensions
Figure 6-1. Chip Size in µm
990,960
GND
393,839
IN
603,828
scribe
OUT
224,495
ATA2525
47,72
VS
Zapping
Versioning
0,0
width
Pad coordinates are for lower left corner of the pad in µm from the origin 0,0
Note:
Dimensions
Length inclusive scribe
Width inclusive scribe
Thickness
1.04 mm
1.11 mm
290µ 5%
80µ 80µ
60µ 60µ
AlCu/AlSiTi(1)
0.8 µm
Pads
Fusing pads
Material
Pad metallurgy
Finish
Thickness
(1)
Material
Si3N4/SiO2
Thickness
0.7/0.3 µm
Note:
1. Value depends on manufacture location.
9
4854G–AUTO–05/10
7. Ordering Information
Delivery: unsawn wafers (DDW) in box
Extended Type Number
ATA2525S1xx(1)C-DDW
ATA2525S3xx(1)C-DDW
ATA2525S5xx(1)C-DDW
D(2)
1493
980
Type
Standard type: high data rate
Lamp type: enhanced suppression of disturbances, secure data transmission
Noise type: best suppression of disturbances, low data rate
730
Notes: 1. xx means the used carrier frequency value (33, 36, 37, 38 or 40 kHz)
2. Maximum data transmission rate up to bits/s with f0 = 40 kHz, VS = 5V (see Figure 5-2 on page 5)
8. Pad Layout
Figure 8-1. Pad Layout
GND
IN
OUT
ATA2525
VS
Zapping
Versioning
Table 8-1.
Pin Description
Symbol
OUT
Function
Data output
Supply voltage
GND
VS
GND
IN
Input pin diode
f0 adjust
Zapping
Versioning
Type adjust
10
ATA2525
4854G–AUTO–05/10
ATA2525
9. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
Revision No.
History
Page 3: Thermal Resistance table deleted
Page 3 and 4: Pin column in Electrical Characteristics table deleted
4854G-AUTO-05/10
Put datasheet in newest template
Ordering Information table changed
4854F-AUTO-09/09
4854E-AUTO-10/06
4854D-AUTO-04/06
Features on page 1 changed
Applications on page 1 changed
Section 1 “Description” on page 1 changed
Section 2 “Pin Configuration” on page 2 deleted
Section 4 “Electrical Characteristics” number 3.3 on page 4 changed
Section 4 “Electrical Characteristics” number 3.4 on page 4 changed
Section 6 “ESD” on page 5 deleted
Section 10 “Ordering Information” on page 10 changed
Put datasheet in a new template
Section 10 “Ordering Information” on page 10 changed
11
4854G–AUTO–05/10
Headquarters
International
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131
USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Atmel Asia
Atmel Europe
Le Krebs
8, Rue Jean-Pierre Timbaud
BP 309
Atmel Japan
Unit 1-5 & 16, 19/F
BEA Tower, Millennium City 5
418 Kwun Tong Road
Kwun Tong, Kowloon
Hong Kong
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
78054
Saint-Quentin-en-Yvelines Cedex Tel: (81) 3-3523-3551
Tel: (852) 2245-6100
Fax: (852) 2722-1369
France
Tel: (33) 1-30-60-70-00
Fax: (33) 1-30-60-71-11
Fax: (81) 3-3523-7581
Product Contact
Web Site
Technical Support
Sales Contact
www.atmel.com
ir_control@atmel.com
www.atmel.com/contacts
Literature Requests
www.atmel.com/literature
Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any
intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDI-
TIONS OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY
WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATMEL BE LIABLE FOR ANY DIRECT, INDIRECT, CONSEQUENTIAL, PUNITIVE, SPECIAL OR INCIDEN-
TAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF
THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Atmel makes no
representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the right to make changes to specifications
and product descriptions at any time without notice. Atmel does not make any commitment to update the information contained herein. Unless specifically provided
otherwise, Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use
as components in applications intended to support or sustain life.
© 2009 Atmel Corporation. All rights reserved. Atmel®, logo and combinations thereof, and others are registered trademarks or trademarks of
Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others.
4854G–AUTO–05/10
相关型号：
©2020 ICPDF网 联系我们和版权申明