T0930 [ATMEL]
SiGe Power Amplifier for CW Applications; SiGe半导体功率放大器CW应用
| 型号： | T0930 |
| 厂家： | 
ATMEL |
| 描述： | SiGe Power Amplifier for CW Applications |
| 文件： | 总10页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• Up to 33 dBm Output Power in CW Mode
• High Power Added Efficiency (PAE)
• Single Supply Operation at 2.4 V (1 W) or 3.2 V (2 W)
• Current Consumption in Power-down Mode ? 10 µA
• No External Power Supply Switch Required
• Power Ramp Control
• Simple Input and Output Matching for Maximum Flexibility
• SMD Package (PSSOP16 with Heat Slug)
SiGe Power
Amplifier for
CW
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Description
The T0930 is a monolithic integrated power amplifier IC. The device is manufactured
with Atmel’s Silicon-Germanium (SiGe) technology and has been designed for use in
900-MHz two-way pagers, PDAs, meter readers and ISM phones.
T0930
With a single supply voltage of 2.4 V to 3.4 V and a neglectable leakage current in
power-down mode, the pager amplifier only needs few external components and thus
helps to reduce system costs. It is suited for operation in CW mode.
Figure 1. Block Diagram
VCC1
5
VCC2
2
GND
10
1
3
4
16
11
12
13
RFin
RFout/VCC3
(900 MHz)
6
Match
Match
Match
(900 MHz)
14
15
Harmonic
tuning
8
9
7
VCTL
VCC,CTL
Control
GND
4722A–SIGE–06/03
Pin Configuration
Figure 2. Pinning PSSOP16
1
2
3
4
5
6
7
8
VCC2
VCC2
VCC2
GND
16
15
14
13
12
11
10
9
GND
RFOUT/VCC3
RFOUT/VCC3
RFOUT/VCC3
RFOUT/VCC3
RFOUT/VCC3
GND
T0930
VCC1
RFIN
GND
VCTL
VCC,CTL
Pin Description
Pin
Symbol
Function
1
VCC2
Supply voltage 2
Supply voltage 2
Supply voltage 2
Ground
2
VCC2
3
VCC2
4
GND
5
VCC1
Supply voltage 1
RF input
6
RFIN
7
GND
Ground (control)
Control input
8
VCTL
9
VCC,CTL
GND
Supply voltage for control
Ground (optional)
10
11
12
13
14
15
16
RFOUT/VCC3
RFOUT/VCC3
RFOUT/VCC3
RFOUT/VCC3
RFOUT/VCC3
GND
RF output/supply voltage 3
RF output/supply voltage 3
RF output/supply voltage 3
RF output/supply voltage 3
RF output/harmonic tuning
Ground
2
T0930
4722A–SIGE–06/03
T0930
Absolute Maximum Ratings
All voltages refer to GND
Parameters
Symbol
Min.
Max.
Unit
Supply voltage VCC at VCTL = 1.7 V, Pin 5
Pin 1, 2, 3
Pins 11, 12, 13, 14 and 15
Pin 9
VCC1
VCC2
VCC3
4
4
4
4
V
VCC, CTL
Input power, Pin 6
Pin
12
2
dBm
V
Gain control voltage(1), Pin 8
Duty cycle for operation
Junction temperature
Storage temperature
V
0
CTL
100
+150
+150
%
Tj
LC
LC
Tstg
-40
Note:
1. The gain control voltage should always be 0.2 V below the supply voltage. RF should be applied before ramp-up.
Operating Range
All voltages referred to GND
Parameters
Symbol
Min.
Typ.
Max.
Unit
VCC1, VCC2, VCC3,
VCC, CTL
Supply voltage VCC(1) 1 W application
Supply voltage VCC(1) 2 W application
1.8
2.4
3
V
VCC1, VCC2, VCC3,
VCC, CTL
2.6
-25
3.2
3.6
V
Ambient temperature
Input frequency
Tamb
fin
+85
LC
900
MHz
Note:
1. The gain control voltage should be always 0.2 V below the supply voltage. RF should be applied before ramp-up.
3
4722A–SIGE–06/03
Electrical Characteristics for 1 W Application
VCC = VCC1, ... , VCC3, VCC, CTL = +2.4 V, VCTL = 1.7 V, Tamb = +25°C, 50-ꢀ input and 50-ꢀ external output match
No. Parameters
Power Supply
1.1 Supply voltage
Current consumption in
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
VCC
I
1.8
2.4
0.9
3.0
V
A
A
A
Pout = 30 dBm
PAE = 47%
1.2
active mode
Current consumption
1.3 (leakage current)
in power-down mode
VCTL ? 0.2 V
I
10
µA
A
2
RF Input
2.1 Frequency range
2.2 Input impedance(1)
2.3 Input power
fin
Zi
880
900
50
5
935
MHz
ꢀ
A
C
C
Pin
12
dBm
Pin = 0 to 12 dBm
Pout = 30 dBm
2.4 Input VSWR(1)
2:1
C
3
RF Output
3.1 Output impedance(1)
Zo
50
ꢀ
C
A
Pin = 5 dBm
RL = RG = 50 ꢀ
Output power in normal
3.2
conditions
VCC = 2.4 V, Tamb = +25LC
Pout
Pout
30
27
dBm
dBm
VCC = 1.8 V, Tamb = +25LC
3.3 Minimum output power
3.4 Power-added efficiency
VCTL = 0.3 V
- 20
dBm
A
A
VCC = 2.4 V, Pout = 27 dBm
VCC = 2.4 V, Pout = 30 dBm
PAE
PAE
40
47
%
%
Temp = -25 to +85LC
no spurious O -60 dBc
3.5 Stability
VSWR
VSWR
10:1
10:1
C
C
Load mismatch (stable,
3.6
Pout = 30 dBm, all phases
no damage)
Second harmonic
distortion
3.7
2fo
3fo
-35
-35
dBc
dBc
A
A
3.8 Third harmonic distortion
Noise power
3.9 f = 925 to 935 MHz
f O 935 MHz
Pout = 30 dBm
RBW = 100 kHz
-73
-85
-70
-82
dBm
dBm
C
3.10 Rise and fall time
0.5
ms
A
C
Isolation between input
Pin = 0 to 10 dBm
VCTL ? 0.2 V (power down)
3.11
50
dB
and output
4
Power Control
4.1 Control curve
Pout O 25 dBm
150
dB/V
dB
V
C
C
A
A
4.2 Power control range
4.3 Control voltage range
4.4 Control current
VCTL = 0.3 to 2.0 V
50
VCTL
ICTL
0.3
2.0
Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V
200
µA
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. With external matching (see “Application Circuit”).
4
T0930
4722A–SIGE–06/03
T0930
Electrical Characteristics for 2 W Application
VCC = VCC1, ... , VCC3, VCC, CTL = +3.2 V, VCTL = 1.9 V, Tamb = +25°C, 50-ꢀ input and 50-ꢀ external output match
No. Parameters
Power Supply
5.1 Supply voltage
Current consumption in
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
5
VCC
I
2.6
3.2
3.6
V
A
A
A
Pout = 33 dBm
PAE = 47%
5.2
1.33
active mode
Current consumption
5.3 (leakage current)
in power-down mode
VCTL ? 0.2 V
I
10
µA
A
6
RF Input
6.1 Frequency range
6.2 Input impedance(1)
6.3 Input power
fin
Zi
880
900
50
5
935
MHz
ꢀ
A
C
C
Pin
12
dBm
Pin = 0 to 12 dBm
Pout = 30 dBm
6.4 Input VSWR(1)
2:1
C
7
RF Output
7.1 Output impedance(1)
Zo
50
ꢀ
C
A
Pin = 5 dBm, RL = RG = 50 ꢀ
VCC = 3.2 V, Tamb = +25LC
Output power in normal
7.2
Pout
Pout
33
30
dBm
dBm
conditions
VCC = 2.2 V, Tamb = +25LC
7.3 Minimum output power
7.4 Power-added efficiency
VCTL = 0.3 V
- 20
47
dBm
%
A
A
VCC = 3.2 V, Pout = 27 dBm
PAE
Temp = -25 to + 85LC
no spurious O -60 dBc
7.5 Stability
VSWR
10:1
10:1
C
C
Load mismatch
7.6
Pout = 33 dBm, all phases
VSWR
(stable, no damage)
Second harmonic
distortion
7.7
2fo
3fo
-35
-35
dBc
dBc
A
A
7.8 Third harmonic distortion
Noise power
7.9 f = 925 to 935 MHz
f O 935 MHz
P
out = 33 dBm
-73
-85
-70
-82
dBm
dBm
C
RBW = 100 kHz
7.10 Rise and fall time
0.5
µs
A
C
Isolation between input
Pin = 0 to 10 dBm
VCTL ? 0.2 V (power down)
7.11
50
dB
and output
8
Power Control
8.1 Control curve
Pout O 25 dBm
150
dB/V
dB
V
C
C
A
A
8.2 Power control range
8.3 Control voltage range
8.4 Control current
VCTL = 0.3 to 2.0 V
50
VCTL
ICTL
0.3
2.0
Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V
200
µA
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. With external matching (see “Application Circuit”).
5
4722A–SIGE–06/03
Figure 3. Pout and PAE versus VCC (1 W Application)
50
45
40
35
30
25
20
15
10
5
PAE
Pout
0
1.8
2.0
2.2
2.4
2.6
2.8
3.8
3.2
3.4
3.6
VCC [V]
Figure 4. Pout and PAE versus Vramp (1 W Application)
50
40
30
20
10
0
PAE
Pout
-10
-20
1.00
1.25
1.50
ramp [V]
1.75
2.00
V
6
T0930
4722A–SIGE–06/03
T0930
Figure 5. Pout and PAE versus VCC (2 W Application)
50
45
40
35
30
25
20
15
10
5
PAE
Pout
0
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
V
CC [V]
Figure 6. Pout and PAE versus Vramp (2 W Application)
50
40
30
20
10
0
PAE
Pout
-10
-20
-30
-40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50 1.60
1.70
1.80
1.90
2.00
Vramp [V]
7
4722A–SIGE–06/03
Application Circuit
Figure 7. Application Circuit GSM Pager (900 MHz)
C13
220 nF
C1
C2
VCC
C12
220 nF
T1
220 nF
220 nF
C11
100 pF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
T2
harmonic tuning
T8
C3
39 pF
AVX
T6
1/4
wavelength
line
T3
15 pF
AVX
C4
T9
T7
C10
RFOUT
T4
T5
56 pF
C9
8.2 pF
AVX
C5
12 pF
RFIN
L1
3.3 nH
900 MHz
Control
VCC,CTL
VCTL
C6
C7
C8
1 nF
22 pF
22 pF
Microstrip line : FR4 ; Epsilon(r) : 4.3 ; metal Cu : 35 ꢀm
distance 1. layer -rf ground : 0.5 mm
l/mm
w/mm
l/mm
20.5
1.3
14.8
14.2
2.5
w/mm
1.0
1.0
0.5
0.5
T1
T2
T3
T4
T5
x
x
x
x
x
T6
T7
T8
T9
43.1
6.0
10.0
4.0
x
x
x
x
0.5
1.25
0.5
1.25
1.0
8
T0930
4722A–SIGE–06/03
T0930
Ordering Information
Extended Type Number
Package
PSSOP16
PSSOP16
Remarks
T0930-TJT
Tube
T0930-TJQ
Taped and reeled
Package Information
Package PSSOP16
Dimensions in mm
4.98
4.80
6.02
3.91
1.60
1.45
0.2
0.25
0.10
0.00
0.64
4.48
16
9
2.21
1.80
technical drawings
according to DIN
specifications
1
8
3.12
2.72
9
4722A–SIGE–06/03
Atmel Corporation
Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Memory
RF/Automotive
2325 Orchard Parkway
San Jose, CA 95131
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
Regional Headquarters
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
Tel: 1(719) 576-3300
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
Asia
Room 1219
ASIC/ASSP/Smart Cards
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
Fax: (33) 4-76-58-34-80
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
Tel: 1(719) 576-3300
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Fax: (44) 1355-242-743
e-mail
literature@atmel.com
Web Site
http://www.atmel.com
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2003. All rights reserved.
Atmel® and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries.
Other terms and product names may be the trademarks of others.
Printed on recycled paper.
4722A–SIGE–06/03
xM
相关型号：
T0952-6BQ
Narrow Band Low Power Amplifier, 1800MHz Min, 2000MHz Max, 1 Func, BIPolar, PLASTIC, TSSOP-8
ATMEL
©2020 ICPDF网 联系我们和版权申明