T2525N636-DDW [ATMEL]
Telecom Circuit, 1-Func, CMOS, WAFER-10;型号: | T2525N636-DDW |
厂家: | ATMEL |
描述: | Telecom Circuit, 1-Func, CMOS, WAFER-10 电信 电信集成电路 |
文件: | 总13页 (文件大小:169K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Features
• No external components except PIN diode
• Supply-voltage range: 4.5 V to 5.5 V
• Automatic sensitivity adaptation (AGC)
• Automatic strong signal adaptation (ATC)
• Enhanced immunity against ambient light disturbances
• Available for carrier frequencies between 30 kHz to 76 kHz; adjusted by Zener diode
fusing
• TTL and CMOS compatible
• Suitable min. burst length ≥ 6 or 10 pulses/burst
IR Receiver
ASSP
Applications
• Audio video applications
• Home appliances
• Remote control equipment
T2525
Description
The IC T2525 is a complete IR receiver for data communication developed and opti-
mized for use in carrier-frequency-modulated transmission applications. Its function
can be described using the block diagram (see figure 1). The input stage meets two
main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly,
the pulsed photo-current signals are transformed into a voltage by a special circuit
which is optimized for low-noise applications. After amplification by a controlled gain
amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter
with a center frequency f0 which is equivalent to the chosen carrier frequency of the
input signal. The demodulator is used to convert the input burst signal into a digital
envelope output pulse and to evaluate the signal information quality, i.e. unwanted
pulses will be suppressed at the output pin. All this is done by means of an integrated
dynamic feedback circuit which varies the gain as a function of the present environ-
mental condition (ambient light, modulated lamps etc.). Other special features are
used to adapt to the current application to secure best transmission quality. The
T2525 operates in a supply-voltage range of 4.5 V to 5.5 V.
Block Diagram
Figure 1.
VS
IN
OUT
CGA &
filter
µC
Input
Demodulator
AGC / ATC & digital
control
Oscillator
Carrier frequency f
0
Modulated IR signal
min 6/10 pulses
GND
Rev. A3, 17-Oct-01
1 (13)
Preliminary Information
Preliminary Information
Ordering Information
Extended Type
PL2)
2
RPU
30
D4)
Type
3)
Number
T2525N0xx1)-yyy5)
T2525N1xx1)-DDW
2090
2090
Standard type: ≥10 pulses, enhanced sensibility, high data rate
Standard type: ≥10 pulses, enhanced sensibility, high data rate
1
30
Lamp type: ≥10 pulses, enhanced suppression of disturbances, secure
data transmission
T2525N2xx1)-yyy5
T2525N3xx1)-DDW
2
1
40
40
1373
1373
Lamp type: ≥10 pulses, enhanced suppression of disturbances, secure
data transmission
T2525N6xx1)-yyy5
T2525N7xx1)-DDW
2
1
30
30
3415
3415
Short burst type: ≥6 pulses, enhanced data rate
Short burst type: ≥6 pulses, enhanced data rate
Notes: 1. xx means the used carrier frequency value f0 30,33,36,38,40,44 ,56 kHz.(76 kHz type on request)
2. Two pad layout versions (see figures 2 and 3) available for different assembly demand
3. Integrated pull-up resistor at PIN OUT (see electrical characteristics)
4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see figure 7)
5. yyy means kind of packaging:
.................... .......DDW -> unsawn wafers in box
.................... .......TAS -> SO8 in stick
.................... .......TAQ -> SO8 taped and reeled
.................... .......6AQ -> (on request, not standard; TSSOP8 taped 1and reeled)
Samples in SO8 package are available as T2525N038, T2525N238 and T2525N638.
Pad Layout
Figure 2. Pad layout 1 (DDW only)
GND
IN
OUT
T2525
FUSING
VS
2 (13)
T2525
Rev. A3, 17-Oct-01
T2525
Figure 3. Pad layout 2 (DDW, SO8 or TSSOP8)
GND
IN
(6)
(5)
(1)
VS
T2525
(3)
OUT
FUSING
Pin Description
Pin
Symbol
Function
1
VS
Supply voltage
2
n.c.
Not connected
Data output
3
OUT
n.c.
4
Not connected
Input PIN-diode
Ground
5
IN
6
GND
n.c.
7
Not connected
Not connected
8
n.c.
Figure 4. Pinning SO8 and TSSOP8
VS
n.c.
1
2
3
4
8
7
6
5
n.c.
n.c.
GND
IN
OUT
n.c.
3 (13)
Preliminary Information
Rev. A3, 17-Oct-01
Preliminary Information
Absolute Maximum Ratings
Parameter
Symbol
VS
Value
-0.3 to 6
3
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
-0.3 to VS
0.75
Input DC current at VS = 5 V
Output voltageVO-0.3 to VSV
Output current
mA
V
VO
-0.3 to VS
IO
mA
°C
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
°C
mW
30
Thermal Resistance
Parameter
Symbol
RthJA
Value
130
Unit
k/W
K/W
Junction ambient SO8
Junction ambient TSSOP8
RthJA
tbd
Electrical Characteristics
Tamb = -25 to 85°C, VS = 4.5 to 5.5 V unless otherwise specified.
No.
1
Parameters
Supply
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1.1
1.2
2
Supply-voltage range
Supply current
Output
1
1
VS
IS
4.5
0.8
5
5.5
1.3
V
C
B
IIN =0
1.1
mA
Tamb = 25°C;
Internal pull-up
resistor 1)
2.1
1,3
RPU
30/40
kΩ
A
see figure 11
IL = 2 mA;
2.2
2.3
2.4
Output voltage low
Output voltage high
3,6
3,1
3,6
VOL
VOH
IOCL
250
Vs
mV
V
B
B
B
see figure 11
VS-
0.25
Output current
clamping
R2 = 0; see figure 11
VIN = 0; see figure 11
8
mA
3
Input
3.1
Input DC current
5
5
IIN_DCMAX
IIN_DCMAX
-85
µA
µA
C
B
VIN = 0; Vs = 5V,
Input DC-current; see
figure 6
3.2
-530
-960
Tamb = 25°C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT
3. After transformation of input current into voltage
4 (13)
T2525
Rev. A3, 17-Oct-01
T2525
Electrical Characteristics
Tamb = -25 to 85°C, VS = 4.5 to 5.5 V unless otherwise specified.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
3.3
Min. detection
threshold current; see
figure 5
Test signal:
see figure 10
VS = 5 V,
3
IEemin
-520
pA
B
Tamb= 25°C,
IIN_DC=1µA;
square pp,
burst N=16,
f=f0; tPER = 10ms,
Fig. 10;
BER = 502)
3.4
Min. detection
threshold current with
AC current
disturbance
IIN_AC100 = 3 µA at
100 Hz
Test signal:
3
IEemin
-800
pA
C
see figure 10
VS = 5 V, Tamb = 25°C,
IIN_DC = 1µA,
square pp,
burst N = 16,
f = f0; tPER = 10 ms,
Fig. 10;
BER = 50%2)
3.5
Max. detection
threshold current with
VIN > 0V
Test signal:
3
IEemax
-400
µA
D
see figure 10
VS = 5V, Tamb = 25°C,
IIN_DC = 1µA;
square pp,
burst N = 16,
f = f0; tPER = 10ms,
Fig. 10; BER=5%2)
4
Controlled Amplifier and Filter
Max. value of variable
gain (CGA)
GVARMAX
GVARMIN
GMAX
51
-5
dB
dB
dB
D
D
D
4.1
Min. value of variable
gain (CGA)
4.2
4.3
Total internal
amplification3)
71
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT
3. After transformation of input current into voltage
5 (13)
Preliminary Information
Rev. A3, 17-Oct-01
Preliminary Information
Electrical Characteristics
Tamb = -25 to 85°C, VS = 4.5 to 5.5 V unless otherwise specified.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
4.4
Center frequency
fusing accuracy of
bandpass
f0_FUSE
-3
f0
+3
%
A
VS = 5 V, Tamb = 25°C
4.5
4.6
Overall accuracy
center frequency of
bandpass
f0
-6.7
f0
+4.1
%
C
BPF bandwidth:
type N0 - N3
-3dB; f0 = 38 kHz;
see fig 8
B
B
3.5
5.4
kHz
kHz
C
C
BPF bandwidth:
type N6, N7
-3dB; f0 = 38 kHz
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT
3. After transformation of input current into voltage
ESD
All pins
2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7
Reliability
Electrical qualification (1000h) in molded S08 plastic package
Typical Electrical Curves at Tamb = 25°C
Figure 5. IEemin vs. IIN_DC , VS = 5 V
6 (13)
T2525
Rev. A3, 17-Oct-01
T2525
Figure 6. VIN vs. IIN_DC, VS = 5 V
Figure 7. Data transmission rate, VS = 5 V
Figure 8. Typical bandpass curve
Q = f0 / ∆f; ∆f = -3dB values. Example: Q = 1/ (1.047 - 0.954) = 11
7 (13)
Preliminary Information
Rev. A3, 17-Oct-01
Preliminary Information
Figure 9. Illustration of used terms
1066 µs
Period (P=16)
Burst (N=16 pulses)
533 µs
IN
1
7
16
7
7
33 µs
t
t
DON
OUT
DOFF
533 µs
Envelope 1
Envelope 16
17056µs / data word
OUT
Telegram pause
Data word
17 ms
Data word
t
T
= 62 ms
REP
Example: f = 30 kHz, burst with 16 pulses, 16 periods
Test Circuit
Figure 10.
I
=
∆ U1/400K
Ee
= 5 V
DD
V
∆U1
1nF
400k
I
IN_DC
R1 = 220
VS
20k
I
I
Ee
IN
T2525
GND
IN
OUT
1nF
V
PULSE
∆U2
~
C1
I
20k
= ∆ U /40k
2
IN_DC
f
0
4.7µF
16
I
IN_AC100
-
DC
+
t
= 10ms
PER
8 (13)
T2525
Rev. A3, 17-Oct-01
T2525
Application Circuit
Figure 11.
V
= 5V
DD
*) optional
R2* > 2.4k
R1 = 220
RPU
I
S
VS
I
I
OCL
L
IN
T2525
µC
OUT
I
I
IN
GND
V
V
IN
O
I
IN_DC
C1=4.7µF
C2* = 470pF
Ee
9 (13)
Preliminary Information
Rev. A3, 17-Oct-01
Preliminary Information
Chip Dimensions
Figure 12. Chip size in µm
1130,1030
GND
IN
723,885
351,904
scribe
VS
63,660
T2525
63,70
FUSING
OUT
0,0
width
Note: Pad coordinates are for lower left corner of the pad in µm from the origin 0,0
Dimensions
Length incl. scribe
Width incl. scribe
Thickness
1.15 mm
1.29 mm
290 µ ± 5%
90 µ x 90 µ
70 µ x 70 µ
Pads
Fusing pads
AlSiTi
Pad metallurgy
Finish
Si3N4 thickness 1.05 µm
10 (13)
T2525
Rev. A3, 17-Oct-01
T2525
Package Information
Figure 13.
Package SO8
Dimensions in mm
5.2
4.8
5.00
4.85
3.7
1.4
0.25
0.2
0.4
3.8
0.10
1.27
6.15
5.85
3.81
8
5
technical drawings
according to DIN
specifications
1
4
Figure 14.
Package TSSO8
Dimensions in mm
3.1
2.9
5.0
4.8
0.9
0.8
0.20
0.13
0.38
0.25
0.15
0.05
3.1
2.9
0.65
1.95
8
5
technical drawings
according to DIN
specifications
1
4
11 (13)
Preliminary Information
Rev. A3, 17-Oct-01
Preliminary Information
Ozone Depleting Substances Policy Statement
It is the policy of Atmel Germany GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid
their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these
substances.
Atmel Germany GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed
in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Atmel Germany GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and
do not contain such substances.
12 (13)
T2525
Rev. A3, 17-Oct-01
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Atmel Germany GmbH makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty
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Data sheets can also be retrieved fron the Internet: http://www.atmel-wm.com
Rev. A3, 17-Oct-01
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