T2525N744 [ATMEL]
IR RECEIVER ASSP; 红外接收器ASSP
| 型号： | T2525N744 |
| 厂家： | 
ATMEL |
| 描述： | IR RECEIVER ASSP |
| 文件： | 总10页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• No External Components Except PIN Diode
• Supply-voltage Range: 4.5 V to 5.5 V
• Automatic Sensitivity Adaptation (AGC)
• Automatic Strong Signal Adaptation (ATC)
• Enhanced Immunity Against Ambient Light Disturbances
• Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode
Fusing
• TTL and CMOS Compatible
• Suitable Minimum Burst Length O 6 or 10 Pulses/Burst
IR Receiver
ASSP
Applications
• Audio Video Applications
• Home Appliances
• Remote Control Equipment
T2525
Description
The IC T2525 is a complete IR receiver for data communication developed and opti-
mized for use in carrier-frequency-modulated transmission applications. Its function
can be described using the block diagram (see Figure 1). The input stage meets two
main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly,
the pulsed photo-current signals are transformed into a voltage by a special circuit
which is optimized for low-noise applications. After amplification by a Controlled Gain
Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter
with a center frequency f0 which is equivalent to the chosen carrier frequency of the
input signal. The demodulator is used to convert the input burst signal into a digital
envelope output pulse and to evaluate the signal information quality, i.e., unwanted
pulses will be suppressed at the output pin. All this is done by means of an integrated
dynamic feedback circuit which varies the gain as a function of the present environ-
mental condition (ambient light, modulated lamps etc.). Other special features are
used to adapt to the current application to secure best transmission quality. The
T2525 operates in a supply-voltage range of 4.5 V to 5.5 V.
Figure 1. Block Diagram
VS
IN
OUT
Micro-
controller
CGA and
filter
Input
Demodulator
AGC/ATC and digital
control
Oscillator
Carrier frequency f0
Modulated IR signal
min 6/10 pulses
GND
Rev. 4657D–AUTO–11/03
Pin Configuration
Figure 2. Pinning SO8 and TSSOP8
VS
NC
1
2
3
4
8
7
6
5
NC
NC
GND
IN
OUT
NC
Pin Description
Pin
Symbol
Function
1
VS
Supply voltage
Not connected
Data output
2
NC
3
OUT
NC
4
Not connected
Input PIN diode
Ground
5
IN
6
GND
NC
7
Not connected
Not connected
8
NC
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
VS
Value
-0.3 to +6
3
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
-0.3 to VS
0.75
Input DC current at VS = 5 V
Output voltage
mA
V
VO
-0.3 to VS
10
Output current
IO
mA
°C
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
-25 to +85
-40 to +125
°C
mW
30
Thermal Resistance
Parameter
Symbol
RthJA
Value
130
Unit
K/W
K/W
Junction ambient SO8
Junction ambient TSSOP8
RthJA
TBD
2
T2525
4657D–AUTO–11/03
T2525
Electrical Characteristics
Tamb = 25°C, VS = 5 V unless otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
Supply
1.1
1.2
2
Supply-voltage range
Supply current
Output
1
1
VS
IS
4.5
0.8
5
5.5
1.4
V
C
B
IIN = 0
1.1
mA
Tamb = 25°C;
Internal pull-up
resistor(1)
2.1
1,3
RPU
30/40
kꢀ
A
see Figure 9 on page 7
IL = 2 mA;
2.2
2.3
2.4
3
Output voltage low
Output voltage high
3,6
3,1
3,6
VOL
VOH
IOCL
250
Vs
mV
V
B
B
B
see Figure 9 on page 7
VS - 0.25
Output current
clamping
R2 = 0;
see Figure 9 on page 7
8
mA
Input
VIN = 0;
see Figure 9 on page 7
3.1
Input DC current
5
5
IIN_DCMAX
IIN_DCMAX
-85
µA
µA
C
B
VIN = 0; Vs = 5 V,
Input DC current;
Figure 4 on page 5
3.2
-530
-960
Tamb = 25°C
Test signal:
see Figure 8 on page 7
VS = 5 V,
T
amb = 25°C,
Minimum detection
threshold current;
Figure 3 on page 5
IIN_DC = 1 µA;
square pp,
3.3
3
IEemin
-520
pA
B
burst N = 16,
f = f0; tPER = 10 ms,
Figure 8 on page 7;
BER = 50(2)
Test signal:
see Figure 8 on page 7
VS = 5 V,
Minimum detection
threshold current with
AC current disturbance
IIN_AC100 = 3 µA at
100 Hz
Tamb = 25°C,
IIN_DC = 1 µA,
3.4
3
IEemin
-800
pA
C
square pp,
burst N = 16,
f = f0; tPER = 10 ms,
Figure 8 on page 7;
BER = 50%(2)
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
3
4657D–AUTO–11/03
Electrical Characteristics (Continued)
Tamb = 25°C, VS = 5 V unless otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Test signal:
see Figure 8 on page 7
VS = 5 V, Tamb = 25°C,
IIN_DC = 1 µA;
Maximum detection
3.5
threshold current with square pp,
3
IEemax
-400
µA
D
VIN > 0V
burst N = 16,
f = f0; tPER = 10 ms,
Figure 8 on page 7;
BER = 5%(2)
4
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
4.1
GVARMAX
GVARMIN
GMAX
f0_FUSE
f0
51
-5
dB
dB
dB
%
D
D
D
A
C
C
Minimum value of
variable gain (CGA)
4.2
4.3
4.4
4.5
Total internal
71
f0
amplification(3)
Center frequency fusing
accuracy of bandpass
VS = 5 V, Tamb = 25°C
-3
+3
Overall accuracy center
f r e q u e n c y o f b a n d p a s s
-6.7
f0
+4.1
%
BPF bandwidth:
type N0 - N3
-3 dB; f0 = 38 kHz; see
Figure 6 on page 6
B
3.5
kHz
4.6
BPF bandwidth:
type N6, N7
-3 dB; f0 = 38 kHz
Figure 6 on page 6
B
5.4
kHz
C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
ESD
All pins ꢀ 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7
Reliability
Electrical qualification (1000h) in molded SO8 plastic package
4
T2525
4657D–AUTO–11/03
T2525
Typical Electrical Curves at Tamb = 25°C
Figure 3. IEemin versus IIN_DC , VS = 5 V
Figure 4. VIN versus IIN_DC, VS = 5 V
Figure 5. Data Transmission Rate, VS = 5 V
5
4657D–AUTO–11/03
Figure 6. Typical Bandpass Curve
Q = f0/ꢁf; ꢁf = -3 dB values. Example: Q = 1/(1.047 - 0.954) = 11
Figure 7. Illustration of Used Terms
Period (P=16)
1066 µs
Burst (N=16 pulses)
533 µs
IN
1
7
16
7
7
33 µs
tDON
tDOFF
OUT
533 µs
Envelope 1
Envelope 16
17056 µs/data word
OUT
Telegram pause
Data word
17 ms
Data word
t
TREP = 62 ms
Example: f = 30 kHz, burst with 16 pulses, 16 periods
6
T2525
4657D–AUTO–11/03
T2525
Figure 8. Test Circuit
IEe
=
ꢀ U1/400K
VDD = 5 V
ꢀU1
IIN_DC
400k
1 nF
R1 = 220
VS
20k
IIN
IEe
T2525
GND
IN
OUT
1 nF
VPULSE
ꢀU2
~
C1
20k
IIN_DC = ꢀU2/40k
f0
4.7 µF
16
-
IIN_AC100
DC
+
tPER = 10 ms
Figure 9. Application Circuit
VDD = 5 V
(1) optional
R2(1) > 2.4k
R1 = 220
RPU
IS
VS
IOCL
IL
IN
T2525
Microcontroller
OUT
IIN
GND
VIN
VO
C2(1) = 470 pF
IIN_DC
IEe
C1 = 4.7 µF
7
4657D–AUTO–11/03
Chip Dimensions
Figure 10. Chip Size in µm
1130,1030
GND
IN
723,885
351,904
scribe
VS
63,660
T2525
63,70
OUT
FUSING
0,0
width
Note:
Pad coordinates are for lower left corner of the pad in µm from the origin 0,0
Dimensions
Length inclusive scribe
Width inclusive scribe
Thickness
1.15 mm
1.29 mm
290 µ ± 5%
90 µ P 90 µ
70 µ P 70 µ
AlCu/AlSiTi(1)
0.8 µm
Pads
Fusing pads
Material
Pad metallurgy
Finish
Thickness
Material
Si3N4/SiO2
0.7/0.3 µm
Thickness
Note:
1. Value depends on manufacture location.
8
T2525
4657D–AUTO–11/03
T2525
Ordering Information
Extended Type
Number
PL(2)
RPU
D(4)
Type
(3)
T2525N0xx(1)-yyy(5)
T2525N1xx(1)-DDW
2
1
30
30
2090
2090
Standard type: O 10 pulses, enhanced sensibility, high data rate
Standard type: O 10 pulses, enhanced sensibility, high data rate
Lamp type: O 10 pulses, enhanced suppression of disturbances, secure
data transmission
T2525N2xx(1)-yyy(5)
T2525N3xx(1)-DDW
2
1
40
40
1373
1373
Lamp type: O 10 pulses, enhanced suppression of disturbances, secure
data transmission
T2525N6xx(1)-yyy(5)
T2525N7xx(1)-DDW
2
1
30
30
3415
3415
Short burst type: O 6 pulses, enhanced data rate
Short burst type: O 6 pulses, enhanced data rate
Notes: 1. xx means the used carrier frequency value f0 30,33,36,38,40,44 ,56 kHz.(76 kHz type on request)
2. Two pad layout versions (see Figure 11 and Figure 12) available for different assembly demand
3. Integrated pull-up resistor at pin OUT (see “Electrical Characteristics”)
4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see Figure 5 on page 5)
5. yyy means kind of packaging:
.................... .......DDW -> unsawn wafers in box
.................... .......6AQ -> (only on request, TSSOP8 taped and reeled)
Pad Layout
Figure 11. Pad Layout 1 (DDW only)
GND
IN
OUT
T2525
FUSING
VS
Figure 12. Pad Layout 2 (DDW, SO8 or TSSOP8)
GND
IN
(6)
(5)
(1)
VS
T2525
(3)
OUT
FUSING
9
4657D–AUTO–11/03
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Printed on recycled paper.
4657D–AUTO–11/03
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