T2526N040-DDW [ATMEL]
Telecom Circuit, 1-Func, WAFER-11;
| 型号： | T2526N040-DDW |
| 厂家： | 
ATMEL |
| 描述： | Telecom Circuit, 1-Func, WAFER-11 |
| 文件： | 总14页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• No External Components Except PIN Diode
• Supply-voltage Range: 2.7V to 5.5V
• Highest Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC)
• Automatic Supply Voltage Adaptation
• Highest Immunity against Disturbances from Daylight and Lamps
• Available for Carrier Frequencies between 30 kHz to 76 kHz; adjusted by Zener-Diode
Fusing ±2.5%
Low-voltage
IR Receiver
ASSP
• TTL and CMOS Compatible
Applications
• Home Entertainment Applications (Audio/Video)
• Home Appliances
• Remote Control Equipment
T2526
1. Description
The IC T2526 is a complete IR receiver for data communication developed and opti-
mized for use in carrier-frequency-modulated transmission applications. The IC offers
highest sensitivity as well as highest suppression of noise from daylight and lamps.
The T2526 is available with broadest range of frequencies (30, 33, 36, 37, 38, 40, 44,
56, 76 kHz) and 5 different noise suppression regulation types (standard, lamp, noise,
short burst, data rate) covering requirements of high-end remote control solutions
(please refer to selection guide available for T2525/T2526). The T2526 operates in a
supply voltage range of 2.7V to 5.5V.
The function of the T2526 can be described using the block diagram of Figure 1-1 on
page 2. The input stage meets two main functions. First it provides a suitable bias
voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed
into a voltage by a special circuit which is optimized for low noise applications. After
amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned
integrated narrow bandpass filter with a center frequency f0 which is equivalent to the
chosen carrier frequency of the input signal The demodulator is used first to convert
the input burst signal to a digital envelope output pulse and to evaluate the signal
information quality, i.e., unwanted pulses will be suppressed at the output pin. All this
is done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental conditions (ambient light, modulated lamps
etc.). Other special features are used to adapt to the current application to secure best
transmission quality.
4597G–AUTO–10/06
Figure 1-1. Block Diagram
VS
IN
OUT
CGA and
filter
Micro-
controller
Input
Demodulator
AGC/ATC
and digital control
Oscillator
Carrier frequency f0
T2526
Modulated IR signal
min 6 or 10 pulses
GND
2. Pin Configuration
Figure 2-1. Pinning TSSOP8
VS
NC
1
2
3
4
8
7
6
5
NC
NC
GND
IN
OUT
NC
Table 2-1.
Pin Description
Pin
1
Symbol
VS
Function
Supply voltage
2
NC
Not connected
Data output
3
OUT
NC
4
Not connected
Input PIN-diode
Ground
5
IN
6
GND
NC
7
Not connected
Not connected
8
NC
2
T2526
4597G–AUTO–10/06
T2526
3. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameter
Symbol
VS
Value
–0.3 to +6
3
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
–0.3 to VS
0.75
Input DC current at VS = 5V
Output voltage
mA
V
VO
–0.3 to VS
10
Output current
IO
mA
°C
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
–25 to +85
–40 to +125
°C
mW
30
4. Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient TSSOP8
RthJA
TBD
K/W
3
4597G–AUTO–10/06
5. Electrical Characteristics, 3-V Operation
Tamb = 25°C, VS = 3V unless otherwise specified.
No. Parameters
Supply
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
1.1 Supply-voltage range
1.2 Supply current
1
1
VS
IS
2.7
0.7
3.0
0.9
3.3
1.3
V
C
B
IIN =0
mA
2
Output
Tamb = 25°C
See Figure 7-10 on page 10
2.1 Internal pull-up resistor(1)
1, 3
RPU
30/40
kΩ
A
R2 = 2.4 kΩ
See Figure 7-10 on page 10
2.2 Output voltage low
3, 6
3, 1
3, 6
VOL
VOH
IOCL
250
Vs
mV
V
B
B
B
2.3 Output voltage high
2.4 Output current clamping
VS – 0.25
R2 = 0
8
mA
See Figure 7-10 on page 10
3
Input
VIN = 0
3.1 Input DC current
5
5
IIN_DCMAX
IIN_DCMAX
–150
µA
µA
C
B
See Figure 7-10 on page 10
Input DC current
3.2
VIN = 0; Vs = 3V
See Figure 7-3 on page 7 Tamb = 25°C
–350
–700
Minimum detection
3.3 threshold current
Test signal:
See Figure 7-9 on page 10
See Figure 7-1 on page 7 VS = 3V
Tamb= 25°C, IIN_DC=1 µA
3
3
IEemin
pA
pA
B
C
Minimum detection
threshold current with AC
3.4 current disturbance
IIN_AC100 =
square pp
burst N = 16
f = f0; tPER = 10 ms
Figure 7-8 on page 9
BER = 50(2)
IEemin
–1300
3 µA at 100 Hz
Test signal:
See Figure 7-9 on page 10
VS = 3V, Tamb = 25°C
IIN_DC = 1 µA
square pp
burst N = 16
Maximum detection
3.5 threshold current with
VIN > 0V
3
IEemax
–200
µA
D
f = f0; tPER = 10 ms
Figure 7-8 on page 9
BER = 5%(2)
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
4
T2526
4597G–AUTO–10/06
T2526
5. Electrical Characteristics, 3-V Operation (Continued)
Tamb = 25°C, VS = 3V unless otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
4
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
4.1
GVARMAX
GVARMIN
GMAX
f03V_FUSE
f03V
51
-5
71
f0
dB
dB
dB
%
D
D
D
A
C
C
C
Minimum value of variable
gain (CGA)
4.2
4.3
4.4
4.5
4.6
Total internal
amplification(3)
Center frequency fusing
accuracy of bandpass
VS = 3V, Tamb = 25°C
–2.5
–5.5
–4.5
+2.5
+3.5
+3.0
Overall accuracy center
frequencyofbandpass
f0
%
Overall accuracy center
frequencyofbandpass
Tamb = 0 to 70°C
f03V
f0
%
–3 dB; f0 = 38 kHz;
See Figure 7-7 on page 9
4.7 BPF bandwidth
B
3.8
kHz
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
6. Electrical Characteristics, 5-V Operation
Tamb = 25°C, VS = 5V unless otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
5
Supply
5.1
5.2
6
Supply-voltage range
Supply current
Output
1
1
VS
IS
4.5
0.9
5.0
1.2
5.5
1.6
V
C
B
IIN =0
mA
Internal pull-up
resistor(1)
Tamb = 25°C
See Figure 7-10 on page 10
6.1
1, 3
RPU
30/40
kΩ
A
R2 = 2.4 kΩ
See Figure 7-10 on page 10
6.2
6.3
6.4
Output voltage low
Output voltage high
3, 6
3, 1
3, 6
VOL
VOH
IOCL
250
Vs
mV
V
B
B
B
VS – 0.25
Output current
clamping
R2 = 0
8
mA
See Figure 7-10 on page 10
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
5
4597G–AUTO–10/06
6. Electrical Characteristics, 5-V Operation (Continued)
Tamb = 25°C, VS = 5V unless otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
7
Input
V
IN = 0
7.1
Input DC current
5
5
IIN_DCMAX
–400
µA
µA
C
B
See Figure 7-10 on page 10
Input DC-current
See Figure 7-4 on page
8
VIN = 0; Vs = 5V
Tamb = 25°C
7.2
7.3
IIN_DCMAX
–700
–850
Min. detection
threshold current
Test signal:
See Figure 7-9 on page 10
See Figure 7-2 on page VS = 5V
3
3
IEemin
pA
pA
B
C
7
Tamb = 25°C
IN_DC = 1 µA
I
Min. detection
square pp
burst N = 16
f = f0; tPER = 10 ms
Figure 7-8 on page 9
BER = 50(2)
threshold current with
AC current disturbance
IIN_AC100 = 3 µA at
100 Hz
7.4
7.5
IEemin
–2000
Test signal:
See Figure 7-9 on page 10
VS = 5V, Tamb = 25°C IIN_DC
1 µA
=
Max. detection
threshold current with square pp
3
IEemax
–500
µA
D
VIN > 0V
burst N = 16
f = f0; tPER = 10 ms
Figure 7-8 on page 9
BER = 5%(2)
8
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
8.1
GVARMAX
GVARMIN
GMAX
51
–5
71
dB
dB
dB
D
D
D
Minimum value of
variable gain (CGA)
8.2
8.3
Total internal
amplification(3)
Resulting center
frequency fusing
accuracy
f0 fused at VS = 3V
VS = 5V, Tamb = 25°C
f03V-FUSE
+ 0.5
8.4
f05V
%
A
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
6.1
6.2
ESD
All pins 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7
Reliability
Electrical qualification (1000h) in molded plastic package
6
T2526
4597G–AUTO–10/06
T2526
7. Typical Electrical Curves at Tamb = 25°C
Figure 7-1. IEemin versus IIN_DC, VS = 3V
100
VS = 3V
f = f0
10
1
0.1
0.1
1
10
100
1000
IIN_DC (µA)
Figure 7-2. IEemin versus IIN_DC, VS = 5V
100
VS = 5V
f = f0
10
1
0.1
0.1
1
10
100
1000
IIN_DC (µA)
Figure 7-3.
V
IN versus IIN_DC, VS = 3V
3.5
VS = 3V
f = f0
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
100
1000
IIN_DC (µA)
7
4597G–AUTO–10/06
Figure 7-4. VIN versus IIN_DC, VS = 5V
3.5
VS = 5V
f = f0
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
100
1000
IIN_DC (µA)
Figure 7-5. Data Transmission Rate, VS = 3V
5000
4500
4000
VS = 3V
Short burst
3500
3000
2500
Standard type
Lamp type
2000
1500
1000
500
0
25
35
45
55
65
75
85
f0 (kHz)
Figure 7-6. Data Transmission Rate, VS = 5V
5000
4500
4000
VS = 5V
Short burst
Standard type
Lamp type
3500
3000
2500
2000
1500
1000
500
0
25
35
45
55
65
75
85
f0 (kHz)
8
T2526
4597G–AUTO–10/06
T2526
Figure 7-7. Typical Bandpass Curve
1.1
VS = 3V
1.0
0.9
0.8
Bandwidth (-3 dB)
0.7
0.6
0.5
0.4
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f/f0/B; B => –3 dB values.
Example: Q = 1/(1.047 – 0.954) = 11
Figure 7-8. Illustration of Used Terms
Example: f = 30 kHz, burst with 16 pulses, 16 periods
1066 µs
Period (P = 16)
533 µs
7
Burst (N = 16 pulses)
IN
1
16
7
7
33 µs
tDON
tDOFF
533 µs
OUT
Envelope 1
Envelope 16
17056 µs/data word
OUT
Telegram pause
Data word
17 ms
Data word
t
TREF = 62 ms
9
4597G–AUTO–10/06
Figure 7-9. Test Circuit
I
Ee = ∆U1/400 kΩ
∆U1
VDD = 3V to 5V
400 kΩ
1 nF
IIN_DC
R1 = 220Ω
VS
IEe
IIN
20 kΩ
IN
T2526
OUT
1 nF
IIN_AC100
VPULSE
GND
∆U2
+
C1
4.7 µF
IIN_DC = ∆U2/40 kΩ
20 kΩ
f0
16
-
DC
+
tPER = 10 ms
Figure 7-10. Application Circuit
VDD = 3V to 5V
(1) optional
R1 = 220Ω
R2(1) > 2.4 kΩ
RPU
IS
VS
IOCL
IN
T2526
Microcontroller
OUT
IIN
GND
VIN
VO
+
C1
IEe
(1)
IIN_DC
4.7 µF
C2 = 470 pF
10
T2526
4597G–AUTO–10/06
T2526
8. Chip Dimensions
Figure 8-1. Chip Size in µm
1210, 1040
GND
336,906
IN
783,887
scribe
VS
55,652
T2526
55,62
Fusing
OUT
0,0
width
Note:
Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0
Dimensions
Length inclusive scribe
Width inclusive scribe
Thickness
1.16 mm
1.37 mm
290 µ ± 5%
90 µ × 90 µ
70 µ × 70 µ
AlCu/AlSiTi(1)
0.8 µm
Pads
Fusing pads
Material
Pad metallurgy
Finish
Thickness
Material
Si3N4/SiO2
0.7/0.3 µm
Thickness
Note:
1. Value depends on manufacture location.
11
4597G–AUTO–10/06
9. Ordering Information
Delivery: unsawn wafers (DDW) in box
Extended Type
PL(2)
RPU
D(4)
Type(5)
(3)
Number
T2526N0xx(1)-DDW
T2526N1xx(1)-DDW
T2526N2xx(1)-DDW
T2526N3xx(1)-DDW
T2526N6xx(1)-DDW
T2526N7xx(1)-DDW
2
1
2
1
2
1
30
30
40
40
30
30
2179
2179
1404
1404
3415
3415
Standard type: ≥ 10 pulses, enhanced sensibility, high data rate
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure
data transmission
Short burst type: ≥ 6 pulses, enhanced data rate
Notes: 1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44 or 56 kHz (76 kHz type on request)
2. Two pad layout versions (see Figure 9-1 and Figure 9-2) available for different assembly demand
3. Integrated pull-up resistor at pin OUT (see electrical characteristics)
4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see Figure 7-8 on page 9)
5. On request: noise type, data rate type
9.1
Pad Layout
Figure 9-1. Pad Layout 1
GND
IN
OUT
T2526
Fusing
VS
Figure 9-2. Pad Layout 2
(6)
(5)
IN
GND
(1)
VS
T2526
(3)
Fusing
OUT
12
T2526
4597G–AUTO–10/06
T2526
10. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
Revision No.
History
• Features on page 1 changed
• Applications on page 1 changed
• Section 1 “Description” on page 1 changed
• Section 5 “Electrical Characteristics, 3-V Operation” number 3.4 on
page 3 changed
4597G-AUTO-10/06
• Section 6 “Electrical Characteristics, 5-V Operation” number 7.3 and 7.4
on page 5 changed
• Section 9 “Ordering Information” on page 11 changed
• Section 9 “Ordering Information” on page 11 changed
4597F-AUTO-04/06
4597E-AUTO-04/06
• Put datasheet in a new template
• Section 8 “Chip Dimensions” on page 10 changed
• Put datasheet in a new template
• First page: Pb-free logo added
4597D-AUTO-08/05
• Page 11: Ordering Information changed
• Page 2, 3, 5, 11, 13: SO8 deleted
13
4597G–AUTO–10/06
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4597G–AUTO–10/06
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