T2527N633-6AQ [ATMEL]
Telecom Circuit, 1-Func, PDSO8, TSSOP-8;
| 型号： | T2527N633-6AQ |
| 厂家： | 
ATMEL |
| 描述： | Telecom Circuit, 1-Func, PDSO8, TSSOP-8 ATM 异步传输模式 电信 光电二极管 电信集成电路 |
| 文件： | 总11页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• No External Components Except PIN Diode
• Supply-voltage Range: 2.7 V to 3.6 V
• Available for Carrier Frequencies in the Range of 30 kHz to 56 kHz;
Adjusted by Zener-diode Fusing
• Enhanced Bandpass Filter Accuracy of ±1.25%
• ESD: 4 kV HBM, 400 V MM
• Automatic Sensitivity Adaptation (AGC)
• Automatic Strong Signal Adaptation (ATC)
• Enhanced Immunity against Ambient Light Disturbances
• TTL and CMOS Compatible
Low-voltage
• Suitable Minimum Burst Length ≥ 6 or 10 pulses
Highly Selective
IR Receiver IC
Applications
• Audio/Video Applications
• Home Appliances
• Remote Control Equipment
T2527
Description
The fully integrated IR receiver IC T2527 is designed to be used in all kinds of unidi-
rectional infrared data transmission systems. It is especially optimized for carrier-
frequency modulated transmission applications. Several built-in features enable best
transmission quality.
The input stage has two functions: first to provide the bias voltage for the PIN diode
and secondly to transform the photo current signal into a voltage for further internal
processing. This is carried out by a special circuit that is optimized for low-noise appli-
cations due to the fact that the incoming current signal is as small as 700 pA. This
voltage signal is amplified by a so-called Controlled Gain Amplifier (CGA) followed by
a bandpass filter. The filter frequency and therefore the operating carrier frequency
are defined by a narrow-tuned bandpass filter. The enhanced bandpass filter tunes
the input signal very accurately with a tolerance of ±1.25%.
The input burst signal is demodulated and converted into a digital envelope output
pulse. An integrated dynamic feedback circuit block (which varies the gain as a func-
tion of the present environmental conditions such as ambient light, modulated lamps
etc.) makes sure that the signal information is evaluated and that unwanted pulses are
suppressed at the output pin.
The operating supply voltage range for the T2527 is 2.7 V to 3.6 V.
Rev. 4600B–IRDC–12/02
Figure 1. Block Diagram
VS
IN
OUT
Demo-
dulator
CGA
& filter
Input
ꢀC
AGC / ATC
& digital control
Oscillator
Carrier frequency f0
T2527
Modulated IR signal
min 6 or 10 pulses
GND
Pad Layout
Figure 2. Pad Layout 1 (DDW Only)
GND
IN
OUT
T2527
FUSING
VS
Figure 3. Pad Layout 2 (DDW, SO8 or TSSOP8)
GND
IN
(6)
(5)
(1)
(3)
VS
T2527
OUT
FUSING
2
T2527
4600B–IRDC–12/02
T2527
Pin Configuration
Figure 4. Pinning SO8 and TSSOP8
VS
n.c.
1
2
3
4
8
7
6
5
n.c.
n.c.
GND
IN
OUT
n.c.
Pin Description
Pin
Symbol
Function
1
VS
Supply voltage
Not connected
Data output
2
n.c.
3
OUT
n.c.
4
Not connected
Input PIN diode
Ground
5
IN
6
GND
n.c.
7
Not connected
Not connected
8
n.c.
Absolute Maximum Ratings
Parameters
Symbol
VS
Value
-0.3 to +4.0
2.0
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
-0.3 to VS
0.4
Input DC current at VS = 3 V
Output voltage
mA
V
VO
-0.3 to VS
10
Output current
IO
mA
LC
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
-25 to +85
-40 to +125
LC
mW
20
Thermal Resistance
Parameters
Symbol
RthJA
Value
130
Unit
K/W
K/W
Junction ambient SO8
Junction ambient TSSOP8
RthJA
TBD
3
4600B–IRDC–12/02
Electrical Characteristics
Tamb = -20LC to +70LC, VS = 2.7 V to 3.6 V unless otherwise specified.
No.
1
Parameters
Supply
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1.1
1.2
2
Supply-voltage range
Supply current
Output
1
1
VS
IS
2.7
0.7
3.0
0.9
3.6
1.2
V
C
B
IIN = 0
mA
Internal pull-up
resistor (1)
Tamb = 25LC;
see Figure 12
2.1
2.2
2.3
2.4
1, 3
3, 6
3, 1
3, 6
RPU
VOL
VOH
IOCL
30/40
kꢀ
mV
V
A
B
B
B
R2 = 2.4 kꢀ;
see Figure 12
Output voltage low
Output voltage high
250
Vs
VS-
0.25
Output current
clamping
R2 = 0; see Figure 12
VIN = 0; see Figure 12
8
mA
3
Input
3.1
Input DC current
5
5
3
IIN_DCMAX
IIN_DCMAX
IEemin
-150
µA
µA
pA
C
B
B
Input DC current; see
Figure 6
VIN = 0; VS = 3 V,
Tamb = 25LC
3.2
3.3
-350
-700
Min. detection
threshold current; see
Figure 5
Test signal:
see Figure 11
VS = 3 V,
Tamb = 25LC,
IIN_DC = 1 µA;
square pp,
3.4
Min. detection
threshold current with
AC current
3
IEemin
-1500
pA
C
burst N = 16,
f = f0; tPER = 10 ms,
Figure 10;
disturbance
IIN_AC100 = 3 µA at
100 Hz
BER = 50 (2)
3.5
Max. detection
threshold current with
VIN > 0V
Test signal:
3
IEemax
-200
µA
D
see Figure 11
VS = 3 V, Tamb = 25°C,
IIN_DC = 1 µA;
square pp,
burst N = 16,
f = f0; tPER = 10 ms,
figure 10;
BER = 5%(2)
4
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
GVARMAX
GVARMIN
51
-5
dB
dB
D
D
4.1
Minimum value of
variable gain (CGA)
4.2
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”.
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input Pin 19 to Pin 21 pulses can appear at the
Pin OUT.
3. After transformation of input current into voltage.
4
T2527
4600B–IRDC–12/02
T2527
Electrical Characteristics (Continued)
Tamb = -20LC to +70LC, VS = 2.7 V to 3.6 V unless otherwise specified.
No.
4.3
4.4
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Total internal
GMAX
71
dB
D
amplification (3)
Center frequency
fusing accuracy of
bandpass
f03V_FUSE
-1.25
-3.5
f0
+1.25
+2.0
%
%
A
C
C
VS = 3 V, Tamb = 25°C
See Figure 7
4.5
4.6
Overall accuracy
center frequency of
bandpass
f03V
f0
BPF bandwidth
-3 dB; f0 = 38 kHz;
see Figure 9
B
3.8
kHz
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”.
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input Pin 19 to Pin 21 pulses can appear at the
Pin OUT.
3. After transformation of input current into voltage.
ESD
All pins: 2000 V HBM; 200 V MM, MIL-STD-883C, Method 3015.7
Typical Electrical Curves at Tamb = 25°C
Figure 5. IEemin versus IIN_DC , VS = 3 V
100.0
10.0
1.0
VS = 3 V
f = f0
0.1
0.1
1.0
10.0
I IN_DC ( µA )
100.0
1000.0
5
4600B–IRDC–12/02
Figure 6. VIN versus IIN_DC, VS = 3 V
3.5
VS = 3 V
f = f0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.1
1.0
I IN_DC ( µA )
10.0
100.0
1000.0
Figure 7. Overall Tolerance of Bandpass Inclusive Fusing
2.0
1.5
1.0
0.5
Typical
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-20
-10
0
10
20
30
40
50
60
70
f 0 ( kHz )
Figure 8. Data Transmission Rate, VS = 3 V
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
VS = 3 V
Short burst
Standard type
Lamp type
0
25.0
35.0
45.0
55.0
65.0
75.0
85.0
f 0 ( kHz )
6
T2527
4600B–IRDC–12/02
T2527
Figure 9. Typical Bandpass Curve
1.10
VS = 3 V
1.00
0.90
0.80
Bandwidth (-3dB)
0.70
0.60
0.50
0.40
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f / f0
f1 = 0.96 (at -3 dB)
f2 = f/f0
f3 = 1.047 (at -3 dB)
B = bandwidth (-3 dB)
Q = f2 / B
Example:
Q = 1/ (1.047 - 0.960) = 11.5
Figure 10. Illustration of Used Terms
Example: f = 30 kHz, burst with 16 pulses, 16 periods
Period (P = 16)
1066 ꢀs
Burst (N = 16 pulses)
533 ꢀs
IN
1
7
16
7
7
33 ꢀs
t
t
DOFF
OUT
DON
533 ꢀs
Envelope 16
Envelope 1
17056 ꢀs / data word
Telegram pause
OUT
Data word
Data word
17 ms
T
= 62 ms
REF
7
4600B–IRDC–12/02
Figure 11. Test Circuit
I
=
ꢀU1/400k
ꢀU1
Ee
VDD = 3 V
I
1nF
400k
I
IN_
Ee
DC
R1 = 220
VS
20k
I
IN
I
V
IN_AC100
IN
OUT
1nF
PULSE
T2527
ꢀU2
GND
20k
-
ꢀU2 / 40k
=
I
C1
4.7ꢁF
IN_ DC
f
0
16
DC
+
t
= 10ms
PER
Figure 12. Application Circuit
VDD = 3 V
*) optional
R1 = 220
R2* > 2,4k
RPU
I
S
VS
I
OCL
IN
T2527
ꢀC
OUT
I
IN
GND
V
V
IN
O
C1
4.7ꢀF
C2* = 470pF
I
I
Ee
IN_DC
8
T2527
4600B–IRDC–12/02
T2527
Chip Dimensions
Figure 13. Chip Size in ꢀm (1)
1210, 1040
GND
336, 906
IN
783, 887
Scribe
VS
55, 652
T2527
55, 62
OUT
FUSING
0, 0
Width
Note:
1. Pad coordinates are given for lower left corner of the pad in µm
from the origin 0,0
Dimensions
Length incl. scribe
Width incl. scribe
Thickness
1.16 mm
1.37 mm
290 µ M 5%
90 µ x 90 µ
70 µ x 70 µ
Pads
Fusing pads
AlSiTi
Pad metallurgy
Finish
Si3N4 thickness 1.05 µm
9
4600B–IRDC–12/02
Ordering Information
Delivery: unsawn wafers (DDW) in box, SO8 (150 mil) and TSSOP8 (3 mm body).
Extended Type
Number
(3)
PL(2)
RPU
30
30
40
40
30
30
D(4)
Type
T2527N0xx(1)-yyy(5)
T2527N1xx(1)-DDW
T2527N2xx(1)-yyy(5)
T2527N3xx(1)-DDW
T2527N6xx(1)-yyy(5)
T2527N7xx(1)-DDW
2
1
2
1
2
1
2000
2000
1333
1333
3060
3060
Standard type: ≥10 pulses, enhanced sensibility, high data rate
Lamp type: ≥10 pulses, enhanced suppression of disturbances, secure
data transmission
Short burst type: ≥6 pulses, enhanced data rate
Note:
1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44 or 56 kHz (76 kHz type on request).
2. Two pad layout versions (see Figure 2 and Figure 3) available for different assembly demand.
3. Integrated pull-up resistor at PIN OUT (see electrical characteristics).
4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 3 V (see Figure 8).
5. yyy means kind of packaging: DDW -> unsawn wafers in box.
.................... .......DDW -> unsawn wafers in box
.................... .......6AQ -> (only on request, TSSOP8 taped and reeled)
10
T2527
4600B–IRDC–12/02
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Printed on recycled paper.
4600B–IRDC–12/02
xM
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