T7031-PEP [ATMEL]
Support Circuit, 4 X 4 MM, MO-220, QFN-16;
| 型号： | T7031-PEP |
| 厂家： | 
ATMEL |
| 描述： | Support Circuit, 4 X 4 MM, MO-220, QFN-16 ATM 异步传输模式 电信 电信集成电路 |
| 文件： | 总16页 (文件大小：548K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• Frequency Range 2.4 GHz to 2.5 GHz
• Supply Voltage 2.7 V to 3.6 V
• 21 dBm Linear Output Power for IEEE 802.11b Mode
• 3.5% EVM at 15.5 dBm Output Power for IEEE 802.11g Mode
• On-chip Power Detector with 20 dB Dynamic Range
• Power-down Mode and Biasing Control
• No External Components for Input Matching
• Low Profile Plastic Package QFN16 (4 × 4 × 0.9 mm)
2.4-GHz SiGe
Power Amplifier
for 802.11b/g
Benefits
• IEEE 802.11b WLAN
• IEEE 802.11g OFDM WLAN
• PC Cards, PCMCIA
• 2.4 GHz ISM Band Application
WLAN Systems
Electrostatic sensitive device.
Observe precautions for handling.
T7031
Description
Circuitry
The PA’s is designed for low current-consumption 802.11b and 802.11g multi-mode
applications such as Mini-PCI and PCMCIA for portable devices. The low profile
plastic package with internal input matching to 50 Ω minimizes the PCB board-space
and allows simplified integration with very few passive components. The on-chip
power-detector provides a voltage linear to the output power while the standby/bias
control logic provides power saving and shutdown as well as a linear adjustment of
output power. The PA is realized as a two stage PA with internal interstage-matching
and an open-collector output structure.
Preliminary
Process
The power amplifier is designed in Atmel's Silicon-Germanium (SiGe) process and
provides excellent linearity and noise performance, high gain as well as good power-
added efficiency.
Rev. 4564F–WLAN–07/04
Figure 1. Block Diagram
12
11
10
Det.
9
13
SiGe PA
T7031
8
7
V2_PA_OUT
V2_PA_OUT
14
15
6
5
V2_PA_OUT
V2_PA_OUT
Standby/
biasing
control
16
1
2
3
4
2
T7031 [Preliminary]
4564F–WLAN–07/04
T7031 [Preliminary]
Pin Configuration
Figure 2. Pinning QFN16
16 15 14 13
T7031
12 NC
11
1
2
3
4
VCC
GND
GND
VCTRL
INT_MATCH
10
V_DET_OUT
INT_MATCH
GND on the Paddel
9
5
6 7 8
Pin Description
Pin
Symbol
Function
1
VCC
Supply voltage
Ground
2
GND
3
VCTRL
Power-up/biasing control voltage
Interstage matching (must not be connected)
4
INT_MATCH
V2_PA_Out
V2_PA_Out
V2_PA_Out
V2_PA_Out
INT_MATCH
V_DET_OUT
GND
5
Power amplifier output and supply voltage for 2nd power amplifier stage
Power amplifier output and supply voltage for 2nd power amplifier stage
Power amplifier output and supply voltage for 2nd power amplifier stage
Power amplifier output and supply voltage for 2nd power amplifier stage
Interstage matching (must not be connected)
Power detector output
6
7
8
9
10
11
12
13
14
15
16
Slug
Ground
NC
Not connected
IN_MATCH
PA_IN
Input matching (must not be connected)
Power amplifier input
Supply voltage for 1st power amplifier stage
Supply voltage for 1st power amplifier stage
Ground
V1_PA
V1_PA
–
3
4564F–WLAN–07/04
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
VCC
ICC
Value
6
Unit
V
Supply voltage, no RF voltage applied
Supply current
200
mA
°C
°C
dBm
V
Junction temperature
Tj
150
Storage temperature
TStg
-40 to +125
12
Input RF power
PIN
Control voltage power up/down and biasing
VCTRL
0 to 3
Note:
The part may not survive all maximums applied simultaneously.
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient
RthJA
45
K/W
Operating Range
Parameters
Symbol
VCC
Value
Unit
V
Supply voltage range
Ambient temperature range
2.7 to 3.6
-30 to +80
Tamb
°C
Electrical Characteristics
No.
1.0
1.1
1.2
1.3
1.4
1.5
Parameters
Test Conditions
Pin
Symbol
VCC
Min.
Typ.
Max.
3.6
Unit
V
Type*
Supply voltage
Frequency Range
2.7
2400
1
3.3
A
A
A
A
A
A
f
2500
2
MHz
V
PA operating mode
Power-down Mode
Quiescent
VCTRL
VCTRL
ICQ
Control voltage range
Current Consumption
0.2
V
75
mA
µA
Power-down mode
IPD
10
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
T7031 [Preliminary]
4564F–WLAN–07/04
T7031 [Preliminary]
Electrical Characteristics - Unmodulated Carrier
Test conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 2.45 GHz, Tamb = 25°C
No.
2.0
2.1
2.2
Parameters
Test Conditions
Pin
Symbol
PSAT
Min.
Typ.
24
Max.
Unit
dBm
dBm
dB
Type*
Saturated output
power
For reference
A
A
A
P1dB output Power
P1dB
2fOUT
23
2
nd harmonic
POUT = 18 dBm, with
external matching
30
rejection
ICQ, small signal
condition
2.3
2.4
2.5
Small signal gain
GL
ISOr
22
40
dB
dB
A
A
C
I
CQ, small signal
Reverse isolation
condition
ICQ, small signal
condition
Input 50 Ω VSWR
VSWRin
2:1
2:1
ICQ, small signal
condition, with
external matching
2.6
Output 50 Ω VSWR
VSWRout
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Electrical Characteristics - 11 Mbps CCK Modulation
Test conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 2.45 GHz, Tamb = 25°C, IEEE 802.11b conform 11 Mbps CCK
modulation with gaussian transmit filtering
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Maximum linear
output power
ACPR1 ≥ 33 dBc
ACPR2 ≥ 55 dBc
3.0
PLIN
21
dBm
A
POUT = PLIN
3.1
3.2
Linear power gain
ACPR1 ≥ 33 dBc
ACPR2 ≥ 55 dBc
GL
ICC
22
dB
A
A
POUT = PLIN
ACPR1 ≥ 33 dBc
ACPR2 ≥ 55 dBc
Current Consumption
130
mA
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Electrical Characteristics - 54 Mbps OFDM Modulation
Test conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 2.45 GHz, Tamb = 25°C, IEEE 802.11g conform 54 Mbps OFDM
modulation, 0.7% EVM measurement equipment noise floor included in EVM measurement result.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Error vector
magnitude
4.0
POUT = 15.5 dBm
EVM
3.5
%
C
4.1
4.2
Linear power gain
POUT = 15.5 dBm
POUT = 15.5 dBm
GL
ICC
22
85
dB
A
A
Current consumption
mA
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
5
4564F–WLAN–07/04
Power Detector
Test conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 2.45 GHz, Tamb = 25°C
No.
5.0
5.1
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
V
Type*
Detector voltage
range
POUT = 2 to 22 dBm
VDET
0
2
A
C
Settling time
tSET
0.5
µs
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Typical Operating
Characteristics
Figure 3. Typical Gain and Current versus Control Voltage
Frequency = 2450 MHz, PIN = -40 dBm, VCC = 3.3 V
30
350
280
210
Gain
25
20
Iges
15
10
5
I3
0
140
70
0
-5
-10
I1
-15
I2
-20
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
VCTRL (V)
Figure 4. S-parameter, Magnitude
6
T7031 [Preliminary]
4564F–WLAN–07/04
T7031 [Preliminary]
Figure 5. S-parameters, Magnitude and Phase
Figure 6. Power-sweep, CW-mode
Frequency = 2450 MHz, VCC = 3.3 V, VCTRL = 1.56 V
40
320
280
240
200
160
120
80
PAE
35
30
GAIN
25
20
15
10
5
Iges
I1
I3
40
I2
0
0
-20
-15
-10
-5
0
5
10
15
20
25
30
POUT (dBm)
7
4564F–WLAN–07/04
Figure 7. CCK-modulation Spectrum Conforming Compliance to 802.11b Spectral
Mask (3/5 db Additional Margin at ACPR 1/2 Compared to Limit Given by
IEEE802.11b Standard) at POUT = 21 dBm, VCC = 3.3 V, VCTRL = 1.56 V
Figure 8. Frequency-sweep at PIN = -1.9 dBm, VCC = 3.3 V, VCTRL = 1.56 V
(ACPR Limit), CW-mode
35
30
25
20
180
Iges
160
140
PAE
I3
120
100
80
POUT
Gain
15
10
5
60
40
20
I1
I2
0
0
2400 2410 2420 2430 2440 2450 2460 2470 2480 2490 2500
Frequency (MHz)
8
T7031 [Preliminary]
4564F–WLAN–07/04
T7031 [Preliminary]
Figure 9. VCTRL-sweep at Maximum Linear POUT (ACPR Limit), CW-mode,
Frequency = 2450 MHz, PIN = -1.9 dBm, VCC = 3.3 V
30
360
300
240
180
120
60
PAE
25
20
POUT
15
Iges
I3
Gain
10
5
I1
I2
0
0
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
VCTRL (V)
Figure 10. Error Vector Magnitude (EVM) for 54 MBit OFDM-modulation,
Power Added Efficiency (PAE), Gain versus POUT
30
25
20
15
10
5
12
10
8
GAIN
6
EVM
PAE
EVM limit 3.5%
4
2
0
0
0
5
10
15
20
25
POUT (dBm)
Figure 11. Frequency-sweep at EVM = 3.5% (EVM limit), CW-mode
PIN = -6.3 dBm, VCC = 3.3 V, VCTRL = 1.56 V
30
120
100
Iges
25
Gain
I3
20
15
10
80
60
40
POUT
PAE
I1
I2
5
0
20
0
2400 2410 2420 2430 2440 2450 2460 2470 2480 2490 2500
Frequency (MHz)
9
4564F–WLAN–07/04
Figure 12. VCTRL-sweep at EVM = 3.5% (EVM limit), CW-mode
Frequency = 2450 MHz, PIN = -6.3 dBm, VCC = 3.3 V
30
350
280
210
Gain
25
20
15
10
Iges
5
0
PAE
I3
140
70
0
-5
-10
-15
-20
I1
POUT
I2
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
VCTRL (V)
Figure 13. Power Detector Voltage versus POUT (Unmodulated Carrier), CW-Mode
Frequency = 2450 MHz, VCC = 3.3 V, VCTRL = 1.56 V
2.0
1.8
1.6
1.4
VDET
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-20
-15
-10
-5
0
5
10
15
20
25
30
POUT (dBm)
10
T7031 [Preliminary]
4564F–WLAN–07/04
T7031 [Preliminary]
Figure 14. Power Detector Response Rising Edge
Figure 15. Power Detector Response Falling Edge
11
4564F–WLAN–07/04
Evaluation Board Schematic
Figure 16. Schematic of the Evaluation Board
V_DET_OUT
V2_PA
C7
C13
C12
NC
12
NC
11
10
Det.
9
L2
13
SiGe PA
T7031
NC
8
C1
14
15
7
*
*
*
PA_IN
V1_PA
T1
T2
T3
C10
PA_Out
6
5
C11
Standby/
biasing
control
L1
16
C3
C2
C2
* Microstrip Line
1
2
3
4
Microstrip Line
Length
Width
NC
T1
T2
T3
3.0 mm 0.64 mm
1.7 mm 0.64 mm
2.4 mm 0.64 mm
C8
C5
Metal layer distance to ground: 360 µm
CU metal layer thickness: 35 µm
Dielectrical constant εr: 4.4
C14
VCC
C9
VCTRL
C6
12
T7031 [Preliminary]
4564F–WLAN–07/04
T7031 [Preliminary]
Evaluation Board Bill of Materials
Table 1. Bill of Materials of the Evaluation Board
Component
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Inductor
Reference
Value
4p7
56p
1n
Size
0603
0603
0603
0603
0603
0603
0603
0603
0603
0603
0603
0603
0603
0603
0603
0603
C1
C2
C3
(1)
C4
1µ
C5
4p7
1n
(1)
C6
(1)
C7
1µ
C8
4p7
1n
(1)
C9
C10
C11
C12
C13
4p7
2p2
56p
1n
(1)
C14
1µ
L1
L2
22n
15n
Inductor
Note:
1. Can be omitted at optimum DC supply
Evaluation Board Layout
Figure 17. Layout of the Evaluation Board
13
4564F–WLAN–07/04
Evaluation Board Set-up Institutions
After connection of all cables (RF and DC):
VCC, V1, V2 = 3.3 V
Increase VCTRL until 75 mA quiescent current is reached
•
•
(VCTRL ~ 1.55 V, at frequency = 2450 MHz, PIN = -40 dBm)
•
•
Unmodulated measurements:
–
Measure gain, POUT, PAE, currents, VDET versus PIN, VCTRL, VCC, frequency
Modulated measurements: increase input power until desired linear output power is
reached; this means in case of
–
–
11 Mbps CCK Modulation →APCR measurement: POUT ~ 21 dBm
54 Mbps OFDM Modulation →measurement of EVM
(Error Vector Magnitude): POUT ~ 15.5 dBm
14
T7031 [Preliminary]
4564F–WLAN–07/04
T7031 [Preliminary]
Ordering Information
Extended Type Number
Package
Remarks
MOQ
T7031-PEP
QFN16 - 4 x 4
QFN16 - 4 x 4
Taped and reeled
Taped and reeled
1500 pcs.
6000 pcs.
T7031-PEQ
Taped and reeled
Pb free, halogen free
T7031-PEPM
QFN16 - 4 x 4
1500 pcs.
Taped and reeled
Pb free, halogen free
T7031-PEQM
QFN16 - 4 x 4
–
6000 pcs.
1
Demoboard-T7031
Evaluation board
Package Information
15
4564F–WLAN–07/04
Atmel Corporation
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Memory
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Tel: (49) 71-31-67-0
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San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
Regional Headquarters
Microcontrollers
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Literature Requests
www.atmel.com/literature
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
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as critical components in life support devices or systems.
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Printed on recycled paper.
4564F–WLAN–07/04
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