TST0912-TJS [ATMEL]
Narrow Band Medium Power Amplifier, 880MHz Min, 915MHz Max, 1 Func, BIPolar, PSSOP-16;
| 型号： | TST0912-TJS |
| 厂家： | 
ATMEL |
| 描述： | Narrow Band Medium Power Amplifier, 880MHz Min, 915MHz Max, 1 Func, BIPolar, PSSOP-16 ATM 异步传输模式 射频 微波 |
| 文件： | 总6页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TST0912
SiGe Power Amplifier for GSM 900
Description
The TST0912 is a monolithic integrated power amplifier neglectable leakage current in
IC. The device is manufactured using Atmel Wireless & power-down mode, the TST0912
Microcontrollers’
Silicon-Germanium
(SiGe) needs few external components and reduces system costs.
technology and has been designed for use in GSM
900-MHz mobile phones.
Electrostatic sensitive device.
Observe precautions for handling.
With a single supply voltage operation of 3 V and a
FD e3a5tudBrmesoutput power
D Power-ramp control
D Power-added efficiency (PAE) 50%
D Simple input and output matching
D Simple output matching for maximum flexibility
D SMD package (PSSOP16 with heat slug)
D Single supply operation at 3 V
no negative voltage necessary
D Current consumption in power-down mode ≤ 10 µA,
no external power-supply switch required
Block Diagram
VCC1
VCC2
GND
5
1
2
3
4
10 16
11
12
13
14
15
RFin
RFout/VCC3
(900 MHz)
6
Match
Match
Match
(900 MHz)
8
9
7
VCTL
VCC,CTL
GND
Harmonic tuning
Control
14744
Figure 1. Block diagram
Ordering Information
Extended Type Number
TST0912-TJS
Package
Remarks
PSSO16
PSSO16
Tube
Taped and reeled
TST0912-TJQ
Rev. A2, 28-Sep-00
1 (6)
Preliminary Information
TST0912
Pin Description
Pin
Symbol
Function
Supply voltage 2
1
V
CC2
V
CC2
V
CC2
V
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
CC2
2
Supply voltage 2
V
CC2
V
CC3
RF /V
3
Supply voltage 2
out CC3
4
GND
Ground
RF /V
out CC3
5
V
CC1
Supply voltage 1
6
RF
RF input
in
GND
RF /V
out CC3
7
GND
Ground (control)
V
8
V
CTL
Control input
CC1
RF /V
out CC3
9
V
Supply voltage for control
Ground (optional)
RF output / supply voltage 3
RF output / supply voltage 3
RF output / supply voltage 3
RF output / supply voltage 3
RF output / harmonic tuning
Ground
CC,CTL
RF
RF /V
in
out CC3
10
11
12
13
14
15
16
GND
RF /V
out CC3
GND
GND
V
RF /V
out CC3
V
RF /V
CTL
CC,CTL
out CC3
RF /V
out CC3
RF / V
out
CC3
GND
Figure 2. Pinning
Absolute Maximum Ratings
All voltages refer to GND
Parameter
Symbol
Min.
Max.
Unit
Supply voltage V
Pin 5
V
V
V
5.0
V
CC
CC1
CC2
CC3
Pins 1, 2 and 3
Pins 11, 12, 13 and 14
Pin 9
V
CC, CTL
Input power
Pin 6
Pin 8
P
12
2.2
dBm
V
in
Gain control voltage
Duty cycle for operation
Burst duration
V
CTL
0
25
%
t
1.2
ms
°C
°C
burst
Junction temperature
Storage temperature
T
+150
+150
j
T
stg
– 40
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction ambient
2 (6)
R
t.b.d.
K/W
thJA
Rev. A2, 28-Sep-00
Preliminary Information
TST0912
Operating Range
All voltages refer to GND
Parameter
Symbol
, V , V V
CC3, CC, CTL
Min.
2.4
Typ.
Max.
4.5
Unit
V
Supply voltage V
V
CC1
3.5
CC
CC2
Ambient temperature
Input frequency
T
– 25
+ 85
°C
amb
f
900
MHz
in
Electrical Characteristics
Test conditions: V = V
to V
V
= 3.5 V, V
= 1.5 V, T
= + 25°C, t = 0.577 ms,
burst
CC
CC1
CC3, CC, CTL
CTL
amb
t
= 4.615 ms (see application circuit)
period
Parameter
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
Power supply
Supply voltage
V
2.4
3.5
1.7
4.5
10
V
A
CC
Current consumption
Active mode
= 34.5 dBm, PAE = 50%
I
P
out
Current consumption
(leakage current)
Power-down mode
≤ 0.2 V
I
µA
V
CTL
RF input
Frequency range
Input impedance *)
Input power
f
880
900
50
3
915
MHz
W
in
Z
i
P
12
dBm
in
Input VSWR *)
P
P
= 0 to 12 dBm,
VSWR
2 : 1
in
= 34.5 dBm
out
RF output
Output impedance *)
Output power
Z
50
W
o
P
in
= 3 dBm, R = R = 50 Ω
L
G
V
CC
V
CC
= 3.5 V, T
= 2.7 V, T
= +25°C
= +85°C
P
out
34.3
32.0
34.8
33.0
dBm
dBm
amb
amb
Minimum output power
Power-added efficiency
V
= 0.3 V
– 20
dBm
CTL
V
CC
V
CC
V
CC
= 3 V, P = 28 dBm
25
35
50
out
= 3 V, P = 30 dBm
PAE
%
out
= 3 V, P = 33.5 dBm
out
Stability
T
= –25 to + 85 °C
VSWR
VSWR
10 : 1
10 : 1
amb
no spurious ≥ –60 dBc
P = 34.5 dBm,
out
Load mismatch
(stable, no demage)
all phases
Second harmonic distortion
Third harmonic distortion
Noise power
2fo
3fo
–35
–35
dBc
dBc
P
out
= 34 dBm, RBW = 100
kHz
– 73
– 85
– 70
– 82
dBm
dBm
f = 925 to 935 MHz
f ≥ 935 MHz
Rev. A2, 28-Sep-00
3 (6)
Preliminary Information
TST0912
Electrical Characteristics (continued)
Test conditions: V = V
to V
V
= 3.5 V, V
= 1.5 V, T
= + 25°C, t = 0.577 ms,
burst
CC
CC1
CC3, CC, CTL
CTL
amb
t
= 4.615 ms (see application circuit)
period
Parameter
Test Conditions / Pins
Symbol Min.
t , t
Typ.
Max.
Unit
µs
Rise and fall time
0.5
r
f
Isolation between input and
output
P
V
= 0 to 10 dBm,
50
dB
in
≤ 0.2 V (power down)
CTL
Power control
Control curve slope
Power-control range
Control-voltage range
Control current
P
≥ 25 dBm
150
dB/ V
dB
out
V
= 0.3 to 2.0 V
50
CTRL
V
CTL
0.3
2.0
V
P = 0 to 10 dBm,
in
V
CTL
= 0 to 2.0 V
I
200
µA
CTL
*)
with external matching (see application circuit)
50
45
40
35
30
25
20
50
40
30
20
10
0
PAE
Pout
PAE
Pout
Gain
–40
–30
–20
–10
(dBm)
0
10
20
2.5
3.0
3.5
4.0
4.5
5.0
P
V
CC
(V)
in
Figure 5. Pout, PAE versus VCC
Figure 3. Gain, Pout and PAE versus Pin
60
50
40
30
20
10
0
Remarks for the Application Circuit
PAE
All components Tx are microstrip lines:
FR4, epsilon(r) = 4.3, metal: Cu 3.5 mm;
distance: 1. layer to RF ground = 0.5 mm
Pout
Name
l
w
Name
l
w
mm
mm
mm
mm
T1
T2
T3
T4
20.5
1.3
1.0
1.0
0.5
0.5
T5
T6
T7
T8
2.5
43.1
6.0
1.0
0.5
14.8
14.2
1.25
0.5
–10
10.0
0.50 0.75 1.00 1.25 1.50 1.75 2.00
(V)
V
ramp
Figure 4. Pout, PAE versus Vramp
4 (6)
Rev. A2, 28-Sep-00
Preliminary Information
TST0912
Application Circuit
C1
C2
V
C12
CC
220nF
T1
220nF
220nF
C11
100pF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
T2
Harmonic tuning
T8
C3
39pF
AVX
T6
1/4 Wavelength line
T3
15pF
AVX
C4
C10
T7
RF
T4
T5
OUT
56pF
C9
10 pF
AVX
C5
12pF
L1
3.3nH
RF
IN
900 MHz
Control
V
CC,CTL
C7
V
CTL
C6
C8
1nF
22pF
22pF
14250
Figure 6.
Package Information
Rev. A2, 28-Sep-00
5 (6)
Preliminary Information
TST0912
Ozone Depleting Substances Policy Statement
It is the policy of Atmel Germany GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid
their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these
substances.
Atmel Germany GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed
in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Atmel Germany GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
2.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Atmel Wireless & Microcontrollers products for any unintended
or unauthorized application, the buyer shall indemnify Atmel Wireless & Microcontrollers against all claims,
costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Data sheets can also be retrieved from the Internet:
http://www.atmel–wm.com
Atmel Germany GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
6 (6)
Rev. A2, 28-Sep-00
Preliminary Information
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