BC807 [AUK]

PNP Silicon Transistor (High current application Switching application); PNP硅晶体管(高电流应用交换应用程序)
BC807
型号: BC807
厂家: AUK CORP    AUK CORP
描述:

PNP Silicon Transistor (High current application Switching application)
PNP硅晶体管(高电流应用交换应用程序)

晶体 晶体管
文件: 总3页 (文件大小:86K)
中文:  中文翻译
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BC807  
Semiconductor  
PNP Silicon Transistor  
Descriptions  
High current application  
Switching application  
Features  
Suitable for AF-Driver stage and low power output stages  
Complementary Pair with BC817  
Ordering Information  
Type NO.  
Marking  
Package Code0  
SOT-23  
BC807  
LA  
: hFE rank  
Outline Dimensions  
unit : mm  
2.4±0.1  
1.30±0.1  
1
3
2
0.45~0.60  
0.2 Min.  
PIN Connections  
1. Base  
2. Emitter  
3. Collector  
KST-2024-000  
1
BC807  
Absolute maximum ratings  
Characteristic  
(Ta=25°C)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
-50  
Unit  
V
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-base voltage  
Collector current  
-35  
V
-5  
V
-800  
200  
mA  
mW  
°C  
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
Tj  
150  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
(Ta=25°C)  
Symbol  
BVCEO  
Test Condition  
Min. Typ. Max. Unit  
Collector-Emitter breakdown voltage  
Base-Emitter turn on voltage  
Collector-Emitter saturation voltage  
Collector cut-off current  
IC=-1mA, IB=0  
-35  
-
-
-
-
-
-
V
VBE(ON)  
VCE(sat)  
ICBO  
VCE=-1V, IC=-300mA  
IC=-500mA, IB=-50mA  
VCB=-25V, IE=0  
-
-
-1.2  
-700  
-100  
630  
V
mV  
nA  
-
-
*
DC current gain  
VCE=-1V, IC=-100mA  
100  
hFE  
VCB=-5V, IE=10mA  
f=100MHz  
Transition frequency  
fT  
-
-
100  
16  
-
-
MHz  
pF  
Collector output capacitance  
Cob  
VCB=-10V, IE=0, f=1MHz  
* : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630  
KST-2024-000  
2
BC807  
Electrical Characteristic Curves  
Fig. 2 IC -VBE  
Fig. 1 Pc-Ta  
Fig. 3 IC - VCE  
Fig. 4 hFE - IC  
Fig. 5 VCE(sat) - IC  
KST-2024-000  
3

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