BC817 [AUK]
NPN Silicon Transistor (High current application Switching application); NPN硅晶体管（高电流应用交换应用程序）
| 型号： | BC817 |
| 厂家： | 
AUK CORP |
| 描述： | NPN Silicon Transistor (High current application Switching application) |
| 文件： | 总3页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC817
Semiconductor
NPN Silicon Transistor
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driver stage and low power output stages
• Complementary pair with BC807
Ordering Information
Type NO.
Marking
Package Code
SOT-23
BC817
NA
: hFE rank
Outline Dimensions
unit : mm
2.4±0.1
1.30±0.1
1
3
2
0.45~0.60
0.2 Min.
PIN Connections
1. Base
2. Emitter
3. Collector
KST-2003-000
1
BC817
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
50
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
35
V
5
V
800
mA
mW
°C
Collector dissipation
Junction temperature
Storage temperature
PC
200
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
BVCEO
Test Condition
Min. Typ. Max. Unit
Collector-Emitter breakdown voltage
Base-Emitter turn on voltage
Collector-Emitter saturation voltage
Collector cut-off current
IC=1mA, IE=0
35
-
-
V
VBE(ON)
VCE(sat)
ICBO
VCE=1V, IC=300mA
IC=500mA, IB=50mA
VCB=25V, IE=0
-
-
1.2
700
100
630
-
V
-
-
mV
nA
-
-
100
-
-
*
DC current gain
VCE=1V, IC=100mA
VCB=5V, IC=10mA
VCB=10V, IE=0, f=1MHz
-
hFE
Transition frequency
fT
100
16
MHz
pF
Collector output capacitance
Cob
-
-
* : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
KST-2003-000
2
BC817
Electrical Characteristic Curves
Fig. 1 PC - Ta
Fig. 2 IC -VBE
F
Fig. 3 IC -VCE
Fig. 4 VCE(sat) - IC
Fig. 5 hFE
-
IC
KST-2003-000
3
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