BC818F [AUK]

NPN Silicon Transistor (High current application Switching application); NPN硅晶体管（高电流应用交换应用程序）


型号：	BC818F
厂家：	AUK CORP
描述：	NPN Silicon Transistor (High current application Switching application) NPN硅晶体管（高电流应用交换应用程序）晶体晶体管
文件：	总3页 (文件大小：83K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BC818F

Semiconductor

NPN Silicon Transistor

Descriptions

• High current application

• Switching application

Features

• Suitable for AF-Driver stage and low power output stages

• Complementary pair with BC808F

Ordering Information

Type NO.

Marking

Package Code

SOT-23F

BC818F

: h_FErank

Outline Dimensions

unit : ^mm

2.4±0.1

1.6±0.1

PIN Connections

1. Base

2. Emitter

3. Collector

KST-2088-000

BC818F

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

800

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

200

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

Characteristic

(Ta=25°C)

Symbol

BV_CEO

Test Condition

Min. Typ. Max. Unit

Collector-Emitter breakdown voltage

Base-Emitter turn on voltage

Collector-Emitter saturation voltage

Collector cut-off current

I_C=1mA, I_B=0

V_BE(ON)

V_CE(sat)

I_CBO

V_CE=1V, I_C=300mA

I_C=500mA, I_B=50mA

V_CB=30V, I_E=0

1.2

700

100

630

100

DC current gain

V_CE=1V, I_C=100mA

V_CB=5V, I_C=10mA

V_CB=10V, I_E=0, f=1MHz

h_FE

Transition frequency

f_T

100

MHz

Collector output capacitance

C_ob

* : h_FErank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630

KST-2088-000

BC818F

Electrical Characteristic Curves

Fig. 1 P_C- T_a

Fig. 2 I_C-V_BE

Fig. 3 I_C-V_CE

Fig. 4 V_CE(sat)- I_C

Fig. 5 h_FE

I_C

KST-2088-000

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