SDB110Q [AUK]
Schottky Barrier Diode; 肖特基二极管
| 型号： | SDB110Q |
| 厂家： | 
AUK CORP |
| 描述： | Schottky Barrier Diode |
| 文件： | 总3页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDB110Q
Semiconductor
Schottky Barrier Diode
Features
·
Low power rectified
· Silicon epitaxial type
· Battery changing diode
Ordering Information
Type No.
Marking
Package Code
SDB110Q
S3
SOD-523
Outline Dimensions
unit : mm
1.6±0.1
1.2±0.1
2
1
1
2
PIN Connections
1. Anode
2. Cathode
KSD-E009-001
1
SDB110Q
Absolute maximum ratings
Characteristic
(Ta=25° C)
Symbol
Ratings
10
Unit
Reverse voltage
VR
V
*
Repetitive peak forward current
Forward current
IFRM
0.5
A
IF
30
mA
°C
Junction temperature
Storage temperature
Tj
150
°C
Tstg
-55 ~ 150
* : d = D/T =0.33
(T<1S)
* : Unit ratings. Total rating=Unit rating´ 1.5
Electrical Characteristics
(Ta=25
° C)
Characteristic
Forward voltage 1
Forward voltage 2
Reverse current
Symbol
VF(1)
VF(2)
IR
Test Condition
Min. Typ. Max. Unit
IF=1mA
IF=10mA
VR=5V
0.1
-
-
-
-
0.3
0.35
0.5
V
V
mA
-
C=200pF, RL=100
Both forward reverse direction
5 pulse
ESD-Capability
-
225
-
V
KSD-E009-001
2
SDB110Q
Electrical Characteristic Curves
Fig. 1 IF-VF
Fig. 2 IR -VR
KSD-E009-001
3
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