SPI5342-H [AUK]
Photo Diode; 光电二极管
| 型号： | SPI5342-H |
| 厂家： | 
AUK CORP |
| 描述： | Photo Diode |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPI5342-H
Semiconductor
Photo Diode
Features
• Peak sensitivity wavelength matching with infrared LED(λP=950nm)
• 4.8mm ×5.5mm side view package
• Colorless transparency lens type
Application
• Infrared remote controllers for TVs, VCRs, Audio equipment etc
Outline Dimensions
unit : mm
0.2
4.8±
3.65±0.2
1.75
0.2
5.55±
0.2
5.6±
0.6
1.0
18.0±
Typ.0.5
2.54
①
②
PIN Connections
1. Anode
2.Cathode
KPE-0003-000
1
SPI5342-H
Absolute maximum ratings
Characteristic
Symbol
VR
Ratings
40
Unit
V
Reverse Voltage
Power Dissipation
PD
170
mW
℃
-20∼ 70
-25∼ 85
Operating Temperature
Storage Temperature
*1Soldering Temperature
Topr
Tstg
℃
260℃ for 5 seconds
Tsol
*1.Keep the distance more than 2.0mm from PCB to the bottom of LED package
Electrical Characteristics
Characteristic
*1Short Circuit Current
Dark Current
Symbol
ISC
Test Condition
Min. Typ. Max. Unit
Ee=6mW/㎠
-
-
-
50
-
-
-
uA
nA
50
10
ID
VR=10V
pF
Capacitance
Ct
VR=10V, f=1MHz
Δλ
430 ~ 1,050
940
nm
nm
deg
Spectral Sensitivity
Peak Sensitivity Wavelength
Half angle
-
-
-
λP
θ1/2
-
-
-
-
±55
*1. Ee : Irradiance by infrared LED light source(λp=940nm)
KPE-0003-000
2
SPI5342-H
Characteristic Diagrams
Fig. 1 ISC - Ee
Fig. 2 ID - Ta
Light Source [mW/㎠
Ambient Temperature Ta [℃]
Fig.4 ID – VR
]
Fig. 3 Ct – VR
Reverse Voltage [v]
Reverse Voltage [v]
Fig.5 Spectrum Sensitivity
Fig. 5-2 Radiation Diagram
0°
100
50
0
50
100
KPE-0003-000
3
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