SRA2201E [AUK]

PNP Silicon Transistor; PNP硅晶体管
SRA2201E
型号: SRA2201E
厂家: AUK CORP    AUK CORP
描述:

PNP Silicon Transistor
PNP硅晶体管

晶体 晶体管
文件: 总3页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SRA2201E  
Semiconductor  
PNP Silicon Transistor  
Descriptions  
Switching application  
Interface circuit and driver circuit application  
Features  
With built-in bias resistors  
Simplify circuit design  
Reduce a quantity of parts and manufacturing process  
High packing density  
Ordering Information  
Type NO.  
Marking  
Package Code  
SOT-523  
SRA2201E  
1R  
Outline Dimensions  
unit : mm  
Equivalent Circuit  
1.60±0.1.  
0.80±0.1.  
C(OUT)  
1
2
3
B(IN)  
R1  
R2  
E(COMMON)  
0.15 Min.  
R1  
R2  
PIN Connections  
1. Base  
2. Emitter  
4.7KΩ  
4.7KΩ  
3. Collector  
KSR-4025-000  
1
SRA2201E  
Absolute maximum ratings  
Characteristic  
(Ta=25°C)  
Symbol  
VO  
Ratings  
-50  
Unit  
V
Out Voltage  
Input Voltage  
VI  
-20  
V
Out Current  
IO  
-100  
mA  
mW  
°C  
Power Dissipation  
Junction Temperature  
Storage Temperature  
PD  
150  
TJ  
150  
TSTG  
-55 ~ 150  
°C  
Electrical Characteristics  
Characteristic  
(Ta=25°C)  
Symbol  
IO(OFF)  
GI  
Test Condition  
Min. Typ. Max. Unit  
Output Cut-off Current  
DC Current Gain  
VO=-50V, VI=0  
-
30  
-
-
-500  
-
nA  
-
VO=-5V, IO=-10mA  
IO=-10mA, II=-0.5mA  
VO=-0.2V, IO=-5mA  
VO=-5V, IO=-0.1mA  
VO=-10V, IO=-5mA  
VI=-5V  
55  
Output Voltage  
VO(ON)  
VI(ON)  
VI(OFF)  
fT*  
-0.1  
-1.5  
-1.2  
200  
-
-0.3  
-2.0  
-
V
Input Voltage (ON)  
-
V
Input Voltage (OFF)  
Transition Frequency  
Input Current  
-1.0  
-
V
-
MHz  
mA  
II  
-
-1.8  
* : Characteristic of Transistor Only  
KSR-4025-000  
2
SRA2201E  
Electrical Characteristic Curves  
Fig. 2 IO - VI(OFF)  
Fig. 1 IO - VI(ON)  
Fig. 3 GI - IO  
KSR-4025-000  
3

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