SRA2212SF [AUK]
PNP Silicon Transistor; PNP硅晶体管
| 型号： | SRA2212SF |
| 厂家： | 
AUK CORP |
| 描述： | PNP Silicon Transistor |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRA2212SF
Semiconductor
PNP Silicon Transistor
Descriptions
• Switching application
• Interface circuit and driver circuit application
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and manufacturing process
• High packing density
Ordering Information
Type NO.
Marking
Package Code
SOT-23F
SRA2212SF
RAB
Outline Dimensions
unit : mm
• Equivalent Circuit
2.4±0.1
1.6±0.1
C(OUT)
1
B(IN)
R1
3
2
R1 = 100KΩ
E(COMMON)
PIN Connections
1. Base
2. Emitter
3. Collector
KSR-2036-001
1
SRA2212SF
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
V
-5
V
-100
200
mA
mW
°C
Power Dissipation
PD
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ 150
°C
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
ICBO
Test Condition
Min. Typ. Max. Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1mA
IC=-10mA, IB=-0.5mA
VCE=-10V, IC=-5mA
-
-
-
-
-500
nA
nA
-
IEBO
-
-500
hFE
120
-
-
-0.3
-
Collector-Emitter Saturation Voltage
Transition Frequency
VCE(SAT)
fT*
-
-
-
-0.1
250
100
V
MHz
KΩ
Input Resistance
R1
-
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 2 VCE(SAT) - IC
Fig. 1 hFE - IC
KSR-2036-001
2
相关型号：
©2020 ICPDF网 联系我们和版权申明