SRC1212M [AUK]

NPN Silicon Transistor; NPN硅晶体管


型号：	SRC1212M
厂家：	AUK CORP
描述：	NPN Silicon Transistor NPN硅晶体管晶体晶体管
文件：	总2页 (文件大小：49K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SRC1212M

Semiconductor

NPN Silicon Transistor

Descriptions

• Switching application

• Interface circuit and driver circuit application

Features

• With built-in bias resistors

• Simplify circuit design

• Reduce a quantity of parts and manufacturing process

• High packing density

Ordering Information

Type NO.

Marking

Package Code

TO-92M

SRC1212M

1212

Outline Dimensions

unit : ^mm

4.0±0.1

• Equivalent Circuit

C(OUT)

0.44 REF

0.52 REF

B(IN)

R₁

R₁= 100KΩ

E(COMMON)

1.27 Typ.

2.54 ± 0.1.

1 2 3

PIN Connections

1. Emitter

2. Collector

3. Base

3.0±0.1

3.8 Min.

KSR-I009-000

SRC1212M

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

°C

Power Dissipation

P_D

400

Junction Temperature

Storage Temperature

T_J

150

T_STG

-55 ~ 150

°C

Electrical Characteristics

Characteristic

(Ta=25°C)

Symbol

I_CBO

Test Condition

Min. Typ. Max. Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

V_CB=50V, I_E=0

V_EB=5V, I_C=0

V_CE=5V, I_C=1mA

I_C=10mA, I_B=0.5mA

V_CE=10V, I_C=5mA

500

I_EBO

h_FE

120

Collector-Emitter Saturation Voltage

Transition Frequency

V_CE(SAT)

f_T^*

0.1

250

100

0.3

MHz

KΩ

Input Resistance

R₁

* : Characteristic of Transistor Only

Electrical Characteristic Curves

Fig. 2 V_CE(SAT)- I_C

Fig. 1 h_FE- I_C

KSR-I009-000

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