STB1132 [AUK]

PNP Silicon Transistor; PNP硅晶体管


型号：	STB1132
厂家：	AUK CORP
描述：	PNP Silicon Transistor PNP硅晶体管晶体晶体管
文件：	总3页 (文件大小：92K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STB1132

Semiconductor

PNP Silicon Transistor

Description

• Medium power amplifier

Features

• P_C(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used)

• Low collector saturation voltage : V_CE(sat)=-0.2V(Typ.)

• Complementary pair with STD1664

Ordering Information

Type NO.

Marking

Package Code

STB1132

SOT-89

: h_FErank, monthly code

Outline Dimensions

unit : ^mm

-0.3

+0.5

4.0

-0.3

+0.2

0.50±0.1

1.00±0.3

2.5

PIN Connections

1. Base

2. Collector

3. Emitter

KST-8001-002

STB1132

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-40

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

-32

-5

-1

P_C

0.5

Collector dissipation

P_C

Junction temperature

Storage temperature

T_j

150

-55~150

°C

T_stg

* : When mounted on 40×40×0.8mm ceramic substate

Electrical Characteristics

(Ta=25°C)

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

I_C=-50µA, I_E=0

-40

-32

-5

I_C=-1mA, I_B=0

I_E=-50µA, I_C=0

V_CB=-20V, I_E=0

V_CE=-30V, I_C=0

V_EB=-4V, I_C=0

-0.1

µA

Collector cut-off current

I_CES

Emitter cut-off current

I_EBO

DC current gain

V_CE=-3V, I_C=-0.1A

100

320

-0.8

h_FE

Collector-Emitter saturation voltage

V_CE(sat)

f_T

I_C=-500mA, I_B=-50mA

-0.2

V_CE=-5V, I_C=-50mA,

f=30MHz

Transition frequency

150

MHz

Collector output capacitance

C_ob

V_CB=-10V, I_E=0, f=1MHz

* : h_FErank / O : 100 ~ 200, Y : 160 ~ 320

KST-8001-002

STB1132

Electrical Characteristic Curves

Fig. 1 P_C- T_a

Fig. 2 I_C- V_BE

Fig. 3 I_C- V_CE

Fig. 4 V_CE(sat)- I_C

Fig. 5 h_FE

I_C

KST-8001-002

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