STB1188 [AUK]
PNP Silicon Transistor; PNP硅晶体管
| 型号： | STB1188 |
| 厂家： | 
AUK CORP |
| 描述： | PNP Silicon Transistor |
| 文件： | 总3页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB1188
Semiconductor
PNP Silicon Transistor
Description
• Medium power amplifier
Features
• PC(Collector dissipation)=2W (Ceramic substate of 40×40×0.8mm used)
• Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
• Complementary pair with STD1766
Ordering Information
Type NO.
Marking
Package Code
SOT-89
STB1188
B1
: hFE rank, monthly code
Outline Dimensions
unit : mm
-0.3
+0.5
4.0
-0.3
+0.2
0.50±0.1
1.00
±0.3
2.5
3
2
1
PIN Connections
1. Base
2. Collector
3. Emitter
KST-8002-001
1
STB1188
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-40
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
-32
V
-5
V
-2
A
PC
0.5
Collector dissipation
W
*
2
PC
Junction temperature
Storage temperature
Tj
150
-55~150
°C
°C
Tstg
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics
(Ta=25°C)
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
IC=-50µA, IE=0
-40
-32
-5
-
-
-
-
V
V
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
-
-
-
V
-
-
-1
-1
320
-0.8
µA
µA
-
Emitter cut-off current
IEBO
-
*
DC current gain
hFE
VCE=-3V, IC=-0.1A
IC=-2A, IB=-200mA
100
-
-
Collector-Emitter on voltage
VCE(sat)
fT
-0.5
V
VCB=-5V, IC=-500mA,
f=30MHz
Transition frequency
-
-
150
50
-
-
MHz
pF
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
* : hFE rank / O : 100~200, Y : 160~320
KST-8002-001
2
STB1188
Electrical Characteristic Curves
Fig. 2 IC - VBE
Fig. 1 PC - Ta
Fig. 3 I C - VCE
Fig. 4 VCE(sat) - IC
Fig. 5 hFE
-
IC
KST-8002-001
3
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