STD1766 [AUK]
NPN Silicon Transistor; NPN硅晶体管
| 型号： | STD1766 |
| 厂家： | 
AUK CORP |
| 描述： | NPN Silicon Transistor |
| 文件： | 总3页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD1766
Semiconductor
NPN Silicon Transistor
Descriptions
• Medium power amplifier
Features
• PC(Collector dissipation)=2W (Ceramic substate of 40×40×0.8mm used)
• Low collector saturation voltage : VCE(sat)=0.5V(Typ.)
• Complementary pair with STB1188
Ordering Information
Type NO.
Marking
Package Code
STD1766
B2
SOT-89
: hFE rank, monthly code
Outline Dimensions
unit : mm
-0.3
+0.5
4.0
-0.3
+0.2
0.50±0.1
1.00
±0.3
2.5
3
2
1
PIN Connections
1. Base
2. Collector
3. Emitter
KST-8006-001
1
STD1766
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
40
32
V
5
V
2
0.5
A
PC
Collector dissipation
W
*
2
PC
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
-55~150
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics
(Ta=25°C)
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
IC=50µA, IE=0
40
32
5
-
-
-
-
V
V
IC=1mA, IB=0
IE=50µA, IC=0
-
-
V
VCB=20V, IE=0
-
-
1
µA
µA
-
Emitter cut-off current
IEBO
VEB=4V, IC=0
-
-
1
*
DC current gain
hFE
VCE=3V, IC=0.5A
IC=2A, IB=200mA
VCB=5V, IC=500mA
VCB=10V, IE=0, f=1MHz
100
-
-
320
0.8
-
Collector-Emitter saturation voltage
Transition frequency
VCE(sat)
fT
0.5
100
30
V
-
MHz
pF
Collector output capacitance
Cob
-
-
* : hFE rank / O : 100~200, Y : 160~320
KST-8006-001
2
STD1766
Electrical Characteristic Curves
Fig. 2 IC - VBE
Fig. 1 PC - Ta
Fig. 3 I C - VCE
Fig. 4 VCE(sat) - IC
Fig. 5 hFE
-
IC
KST-8006-001
3
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