STK03Y60 [AUK]
Advanced Power MOSFET; 先进的功率MOSFET
| 型号： | STK03Y60 |
| 厂家： | 
AUK CORP |
| 描述： | Advanced Power MOSFET |
| 文件： | 总4页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TENTATIVE
STK03Y60
Semiconductor
Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
• High Voltage: BVDSS=600V(Min.)
• Low Crss : Crss=4pF(Typ.)
• Low gate charge : Qg=12nC(Typ.)
• Low RDS(on) : RDS(on)=5.5Ω(Typ.)
Ordering Information
Type NO.
Marking
Package Code
TO-92
STK03Y60
STK03Y60
Outline Dimensions
unit : mm
4.40~4.80
0.50 Max.
1.27 Typ.
1.27 Typ.
1 2 3
PIN Connections
1. Gate
2. Drain
3. Source
TENTATIVE
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TENTATIVE
STK03Y60
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VDSS
VGSS
ID
Rating
600
±30
Unit
V
Drain-source voltage
Gate-source voltage
V
Drain current (DC) **
Drain current (Pulsed) *
0.3
A
IDP
1.2
A
**
Total Power dissipation
PD
625
0.3
mW
A
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
②
②
①
①
IAS
EAS
IAR
53
mJ
A
0.3
EAR
TJ
11
mJ
150
-55~150
°C
Storage temperature range
* Limited by maximum junction temperature
** Device mounted on a glass-epoxy board
Tstg
Characteristic
Symbol
Typ.
Max
Unit
Thermal
**
℃/W
Junction-ambient
resistance
Rth(J-a)
-
200
TENTATIVE
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TENTATIVE
STK03Y60
N-CH Electrical Characteristics
(Ta=25°C)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Symbol
Test Condition
Min. Typ. Max. Unit
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
ID=250μA, VGS=0
600
-
-
5.0
1
V
ID=250μA, VDS=VGS
VDS=600V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=150mA
VDS=10V, ID=150mA
3.0
-
-
V
-
μA
nA
Ω
-
-
±100
8.5
-
-
5.5
0.32
130
20
4
④
-
S
Ciss
Coss
Crss
td(on)
tr
-
-
VGS=0V, VDS=25V,
f=1MHz
pF
ns
nC
Output capacitance
-
-
Reverse transfer capacitance
Turn-on delay time
-
-
-
5.5
5
-
VDD=300V, ID=0.3A
RG=25Ω
Rise time
-
-
Turn-off delay time
td(off)
tf
-
13
28
12
2.5
3.0
-
③④
③④
Fall time
-
-
Total gate charge
Qg
-
18
3.8
4.5
VDD=300V, VGS=10V
ID=0.3A
Gate-source charge
Gate-drain charge
Qgs
-
Qgd
-
Source-Drain Diode Ratings and Characteristics
(Ta=25°C)
Characteristic
Symbol
Test Condition
Min Typ Max Unit
Source current
IS
ISM
VSD
trr
-
-
-
-
-
-
0.3
1.2
1.2
-
Integral reverse diode
in the MOSFET
A
Source current(Plused)
Forward voltage
①
④
-
VGS=0V, IS=0.3A
0.7
260
3.5
V
Reverse recovery time
Reverse recovery charge
ns
uC
Is=0.3A, Vgs=0V
diS/dt=80A/us
Qrr
-
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=109mH, IAS=0.3A, VDD=50V, RG=25Ω
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤2%
④ Essentially independent of operating temperature
TENTATIVE
3
TENTATIVE
STK03Y60
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
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