STK0825F [AUK]

Advanced Power MOSFET; 先进的功率MOSFET


型号：	STK0825F
厂家：	AUK CORP
描述：	Advanced Power MOSFET 先进的功率MOSFET
文件：	总8页 (文件大小：473K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STK0825F

Semiconductor

Advanced Power MOSFET

DC-DC CONVERTER APPLICATION

HIGH VOLTAGE SWITCHING APPLICATIONS

Features

• High Voltage: BV_DSS=250V(Min.)

• Low C_rss: C_rss=13pF(Typ.)

• Low gate charge : Qg=15nC(Typ.)

• Low R_DS(on):R_DS(on)=0.4Ω(Max.)

Ordering Information

Type NO.

Marking

Package Code

TO-220F-3L

STK0825F

STK0825

Outline Dimensions

unit : mm

Φ3.05~3.35

9.80~10.20

2.60~3.00

1.07 Min.

0.90 Max.

0.60 Max.

2.54 Typ.

PIN Connections

1. Gate

2. Drain

3. Source

KSD-T0O007-000

STK0825F

Absolute maximum ratings

Characteristic

(Tc=25°C)

Unit

Symbol

V_DSS

Rating

250

±30

Drain-source voltage

Gate-source voltage

V_GSS

(Tc=25℃)

Drain current (DC)

I_D

(Tc=100℃)

5.6

Drain current (Pulsed)

I_DM

P_D

Drain power dissipation

Avalanche current (Single)

Single pulsed avalanche energy

Avalanche current (Repetitive)

②

①

I_AS

E_AS

I_AR

285

Repetitive avalanche energy

①

E_AR

7.4

Junction temperature

Storage temperature range

T_J

T_stg

150

-55~150

°C

* Limited by maximum junction temperature

Characteristic

Symbol

Typ.

Max

5.0

Unit

Junction-case

R_th(J-C)

Thermal

resistance

℃/W

Junction-ambient

R_th(J-a)

62.5

KSD-T0O007-000

STK0825F

Electrical Characteristics

Characteristic

(Tc=25°C)

Min. Typ. Max. Unit

Symbol

BV_DSS

V_GS(th)

I_DSS

Test Condition

Drain-source breakdown voltage

I_D=250µA, V_GS=0

250

4.0

Gate threshold voltage

I_D=250µA, V_DS= V_GS

V_DS=250V, V_GS=0V

V_DS=0V, V_GS=±30V

V_GS=10V, I_D=4.0A

V_DS=10V, I_D=4.0A

2.0

Drain-source cut-off current

Gate leakage current

µA

Ω

I_GSS

±100

0.4

Drain-source on-resistance

Forward transfer conductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

④

R_DS(ON)

g_fs

0.35

4.2

510

④

Ciss

Coss

Crss

t_d(on)

t_r

770

120

V_GS=0V, V_DS=25V,

f=1MHz

V_DD=125V, I_D=8A

R_G=25Ω

Turn-off delay time

Fall time

t_d(off)

t_f

③④

Total gate charge

Q_g

V_DS=125V, V_GS=10V

I_D=8A

Gate-source charge

Gate-drain charge

Q_gs

Q_gd

Source-Drain Diode Ratings and Characteristics

(Tc=25°C)

Min Typ Max Unit

Characteristic

Symbol

Test Condition

Source current

I_S

I_SM

V_SD

t_rr

1.4

Integral reverse diode

in the MOSFET

Source current(Plused)

Forward voltage

①

④

V_GS=0V, I_S=8A

Reverse recovery time

Reverse recovery charge

222

1.45

I_s=8A, V_GS=0,

di_S/dt=100A/us

Q_rr

Note ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② L=5.9mH, I_AS=8A, V_DD=50V, R_G=27Ω

③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤2%

④ Essentially independent of operating temperature

KSD-T0O007-000

STK0825F

Electrical Characteristic Curves

Fig. 1 I_D- V_DS

Fig. 2 I_D- V_GS

Fig. 4 I_S- V_SD

Fig. 6 V_GS- Q_G

℃

Fig. 3 R_DS(on)- I_D

℃

Fig. 5 Capacitance - V_DS

℃

KSD-T0O007-000

STK0825F

Fig. 7 V_DSS- T_J

Fig. 8 R_DS(on)- T_J

Fig. 10 Safe Operating Area

Fig. 9 I_D- T_C

KSD-T0O007-000

STK0825F

Fig. 11 Gate Charge Test Circuit & Waveform

Fig. 12 Resistive Switching Test Circuit & Waveform

Fig. 13 E_ASTest Circuit & Waveform

KSD-T0O007-000

STK0825F

Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform

KSD-T0O007-000

STK0825F

The AUK Corp. products are intended for the use as components in general electronic

equipment (Office and communication equipment, measuring equipment, home

appliance, etc.).

Please make sure that you consult with us before you use these AUK Corp. products

in equipments which require high quality and / or reliability, and in equipments which

could have major impact to the welfare of human life(atomic energy control, airplane,

spaceship, transportation, combustion control, all types of safety device, etc.). AUK

Corp. cannot accept liability to any damage which may occur in case these AUK Corp.

products were used in the mentioned equipments without prior consultation with AUK

Corp..

Specifications mentioned in this publication are subject to change without notice.

KSD-T0O007-000