STK7002 [AUK]
N-Channel Enhancement-Mode MOSFET; N沟道增强型MOSFET
| 型号： | STK7002 |
| 厂家： | 
AUK CORP |
| 描述： | N-Channel Enhancement-Mode MOSFET |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STK7002
Semiconductor
N-Channel Enhancement-Mode MOSFET
Description
· High speed switching application.
Features
· High density cell design for low RDS(ON)
· Voltage controlled small signal switch
· High saturation current capability.
.
Ordering Information
Type NO.
Marking
Package Code
STK7002
K702
SOT-23
Outline Dimensions
unit : mm
2.4±0.1
1.30±0.1
1
3
2
0.2 Min.
PIN Connections
1. Gate
2. Source
3. Drain
KST-2105-003
1
STK7002
Absolute maximum ratings
Characteristic
(Ta=25
°C)
Symbol
VDSS
VGS
Ratings
60
Unit
Drain-Source voltage
Gate-Source voltage
V
V
±20
Maximum Drain current
Pulsed Drain Current
ID
115
mA
mA
mW
°C/W
IDM
800
Power dissipation
PD
200
Maximum Junction-to-Ambient
R
625
thJA
Operating Junction and
Storage temperature range
TJ , Tstg
-55~150
°C
Electrical Characteristics
Characteristic
(Ta=25
°C)
Symbol
BVDSS
VGS(th)
IDSS
Test Condition
Min. Typ. Max. Unit
Drian-Source breakdown voltage
Gate-Threshold voltage
ID=10mA, VGS =0
60
-
2.0
-
-
2.5
1
V
V
ID=0.25mA, VDS =VGS
VDS =60V, VGS =0
1
Zero Gate voltage drain current
Gate-body leakage
-
-
mA
nA
mA
IGSS
VDS =0V, VGS =±20V
VDS =7.5V, VGS =10V
VGS =5V, ID=0.05A
-
±100
-
On-state drain current
ID(on)
500
-
1000
3.2
5.8
2.4
4.4
-
7.5
13.5
7.5
13.5
-
Tc=125℃
Drain-Source on-resistance
RDS(ON)
W
VGS =10V, ID=0.5A
-
Tc=125℃
Forward transconductance
Input capacitance
gfs
VDS =10V, ID=0.2A
80
-
mS
pF
Ciss
Coss
Crss
tON
22
11
2
50
25
5
Output capacitance
Reverse Transfer capacitance
Turn-on time
VDS =25V, VGS =0, f=1MHz
-
-
-
7
20
20
ns
ns
VDD=30V, ID=0.2A
VGEN=10V, RG=25W
Turn-off time
tOFF
-
11
KST-2105-003
2
STK7002
Electrical Characteristic Curves
Fig. 1 I - VDS
D
Fig. 2 I - VGS
D
Fig. 4 C - VD S
Fig. 3 rDS(on) - ID
Fig. 6 rDS(on) - TJ
Fig. 5 VGS - Qg
KST-2105-003
3
STK7002
Fig. 7 rDS(on) - VGS
Fig. 8 I - VSD
S
Fig. 9 VGS(th) - TJ
m
KST-2105-003
4
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