STS1979 [AUK]
PNP Silicon Transistor; PNP硅晶体管
| 型号： | STS1979 |
| 厂家： | 
AUK CORP |
| 描述： | PNP Silicon Transistor |
| 文件： | 总3页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS1979
Semiconductor
PNP Silicon Transistor
Description
• Medium power amplifier
Features
• Large collector current : ICMax=-500mA
• Suitable for low-Voltage operation because of its low saturation voltage
• Complementary pair with STS5342
Ordering Information
Type NO.
Marking
Package Code
STS1979
STS1979
TO-92
Outline Dimensions
unit : mm
3.45±0.1
2.25±0.1
4.5±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54 Typ.
1 2 3
PIN Connections
1. Emitter
2. Base
3. Collector
KST-9051-000
1
STS1979
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-40
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
-32
V
-5
V
-500
625
mA
mW
°C
Collector dissipation
Junction temperature
Storage temperature
PC
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
IC=-100µA, IE=0
-40
-32
-5
-
-
-
V
IC=-10mA, IB=0
-
-
V
IE=-10µA, IC=0
-
-
-
V
VCB=-40V, IE=0
-0.1
-0.1
240
-0.25
-
µA
µA
-
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-
-
DC current gain
hFE
VCE=-1V, IC=-100mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-20mA
VCB=-6V, IE=0, f=1MHz
120
-
-
Collector-Emitter saturation voltage
Transistor frequency
VCE(sat)
fT
-
V
-
200
7.5
MHz
pF
Collector output capacitance
Cob
-
-
KST-9051-000
2
STS1979
Electrical Characteristic Curves
Fig. 2 IC - VBE
Fig. 1 PC - Ta
Fig. 3 I C - VCE
Fig. 4 VCE(sat) - IC
Fig. 5 hFE
-
IC
Fig. 6 hFE
-
IC
KST-9051-000
3
相关型号：
©2020 ICPDF网 联系我们和版权申明