AS8SF384K32 [AUSTIN]
128K x 16 SRAM & 512K x 16 FLASH SRAM / FLASH MEMORY ARRAY; 128K ×16的SRAM和512K ×16的FLASH SRAM /闪存阵列
| 型号： | AS8SF384K32 |
| 厂家： | 
AUSTIN SEMICONDUCTOR |
| 描述： | 128K x 16 SRAM & 512K x 16 FLASH SRAM / FLASH MEMORY ARRAY |
| 文件： | 总14页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
128K x 16 SRAM &
512K x 16 FLASH
PIN ASSIGNMENT
(Top View)
SRAM / FLASH MEMORY ARRAY
68 Lead CQFP (QT)
FEATURES
• Operation with single 5V supply
• High speed: 35ns SRAM, 90ns FLASH
• Built in decoupling caps and multiple ground pins for low
noise
• Organized as 128K x 16 SRAM and 512K x 16 FLASH
• Low power CMOS
FI/O
SI/O
FI/O0
FI/O1
FI/O2
FI/O3
FI/O4
FI/O5
FI/O67
GND
FI/O
SI/O0
SI/O1
SI/O2
SI/O3
SI/O4
SI/O5
SI/O67
GND
SI/O
• TTL Compatible Inputs and Outputs
• Both blocks of memory are user configurable as 256K x 8
FI/O89
FI/O10
FI/O11
FI/O12
FI/O13
FI/O14
FI/O15
FLASH MEMORY FEATURES
SI/O89
SI/O10
SI/O11
SI/O12
SI/O13
SI/O14
SI/O15
•
•
•
Operation with single 5V (±10%)
Eight equal sectors of 64K bytes
Any combination of sectors can be concurrently
erased
•
•
•
•
Supports full chip erase
Embedded erase and program algorithms
20,000 program/erase cycles
Hardware write protection
OPTIONS
MARKINGS
PIN DESCRIPTION
FUNCTION
• Operating Temperature Ranges
PIN
Military (-55oC to +125oC)
Industrial (-40oC to +85oC)
XT
IT
A 0-18
Address Inputs
SI/O 0-15
SRAM Data Input / Outputs
FI/O 0-15
OE\
FLASH Data Input / Outputs
Output Enable
• Timing
SRAM
35ns
FLASH
90ns
SWE\ 1-2
SRAM Write Enables
-35
QT
FWE\ 1-2
SCS\ 1-2
FCS\ 1-2
VCC
FLASH Write Enables
SRAM Chip Selects
FLASH Chip Selects
Power Supply
• Package
Ceramic Quad Flatpack
GND
NC
Ground
No Connect
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8SF384K32 is a 2 MEG CMOS SRAM and 8 MEG CMOS FLASH Module organized as
128K x 16 (SRAM) and 512K x 16 (FLASH). These devices achieve high speed access, low power consumption and high reliability by
employing advanced CMOS memory technology.
For more detailed information regarding the FLASH internal operations, programming, command definitions and functional
descriptions, please see the AS8F512K32 data sheet located on our website at www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
1
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
FCS\2
FEW\2
M3
M2
FCS\1
FWE\1
FI/O 8 - FI/O 15
FI/O 0 -FI/O 7
SCS\2
SWE\2
M1
/
A0-A16
SI/O 8 - SI/O 15
SCS\1
SWE\1
OE\
M0
A0 - A18
/
SI/O 0 - SI/O 7
A0-A16
BLOCK DIAGRAM
SRAM TRUTH TABLE
MODE
Read
OE\
SCS\
SWE\
I\0
DOUT
POWER
L
L
H
Active
DIN
Write
X
X
L
L
Active
Standby
H
X
High Z
Standby
FLASH TRUTH TABLE
USER BUS OPERATIONS
I/O
OPERATION
FCS\1-4
OE\
FWE\1-4
A0
X
A1
X
A6
X
A9
Data Out
High Z
High Z
Data In
X
Read
L
L
H
L
L
L
L
H
H
H
X
L
X
Output Disable
X
X
X
X
X
Standby and Write Inhibit
Write
X
X
X
X
H
A0
X
A1
X
A6
X
A9
Sector Protect
VID
L
L
VID
Data Out
Data Out
Data Out
Verify Sector Protect
Sector Unprotect
Verify Sector Unprotect
Erase Operations
H
L
H
H
L
VID
see note 2 see note 2
H
H
H
see note 2
VID
L
L
L
H
H
H
H
H
see note 1 see note 1 see note 1 see note 1 see note 1 see note 1
LEGEND:
L = VIL, H = VIH, X = Don't Care, VID = 12V, See DC Charateristics for voltage levels
NOTE:
1. See Chip/Sector Erase Operation Timings and Alternate CE\ Controlled Write Operation Timings of AS8F512K32 data sheet.
2. See Chart 1 (pg. 6) of AS8F512K32 data sheet.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
2
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
This is a stress rating only and functional operation on the
device at these or any other conditions above those indicated
in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airflow. See theApplication
Information section at the end of this datasheet for more infor-
mation.
ABSOLUTE MAXIMUM RATINGS*
Voltage of Vcc Supply Relative to Vss......................-.5V to +7V
Storage Temperature............................................-65°C to +150°C
Short Circuit Output Current(per I/O).................................20mA
Voltage onAny Pin Relative to Vss....................-.5V to Vcc+1V
Maximum JunctionTemperature**...................................+150°C
*Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
PARAMETER
Flash Data Retention
10 years
20,000
Flash Endurance (write / erase cycles)
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < 125oC and -40oC to +85oC;Vcc = 5V +10%)
SRAM
PARAMETER
CONDITION
SYMBOL
VIH
MIN
2.2
-0.5
-10
-10
2.4
--
MAX
UNITS
NOTES
1
VCC +0.3
Input High (Logic 1) Voltage
Input Low (Logic 1) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
V
V
VIL
0.8
10
10
--
1, 2
OV < VIN < Vcc
Output(s) disabled, OV < VOUT < Vcc
OH = -4.0 mA, Vcc = 4.5
IOL = 8.0 mA, Vcc = 4.5
ILI
P$
P$
V
ILO
I
VOH
VOL
1
1
1
0.4
5.5
V
Vcc
4.5
V
SCS\<VIL; VCC = MAX
f = MAX = 1/ tRC (MIN)
Outputs Open, X16
Power Supply
Operating
Current:
Icc
325
20
mA
mA
3
3
SCS\>VIH; VCC = MAX
f = MAX = 1/ tRC (MIN)
Outputs Open, X16
Power Supply
Current: Standby
ISBT1
1. All voltages referenced to VSS (GND).
2. -2V for pulse width <20ns.
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
FLASH
PARAMETER
CONDITION
CE\ = VIL, OE\ = VIH, Vcc = Vcc
Max, f = 5MHz
CE\ = VIL, OE\ = VIH, Vcc = Vcc
Max, f = 5MHz
SYMBOL
MIN
MAX UNITS NOTES
ICC1
Vcc Active Current
--
120
140
mA
mA
Vcc Active Current1, 2
ICC2
--
--
IOL = 8mA, Vcc = Vcc Min
VOL
VOH1
VOH1
VLKO
Output Low Voltage
Output High Voltage
0.45
--
V
V
V
V
IOH = -2.5mA, Vcc = Vcc Min
0.85 x Vcc
VCC-0.4
3.2
IOH = -100m$ꢀꢁVCC = Vcc Min
--
Output High Voltage
Low VCC Lock Out Voltage
NOTES:
1. Icc active while Embedded Program or Embedded EraseAlgorithm is in progress.
2. Not 100% tested.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
3
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1
SYMBOL
PARAMETER
A0 - A18 Capacitance
MAX
UNITS
CADD
COE
50
pF
OE\ Capacitance
50
20
20
pF
pF
pF
CWE, CCS
CIO
WE\ and CS\ Capacitance
I/O 0- I/O 31 Capacitance
NOTE:
1. This parameter is sampled.
AC TEST CONDITIONS
Test Specifications
Input pulse levels.........................................VSS to 3V
Input rise and fall times.........................................5ns
Input timing reference levels...............................1.5V
Output reference levels........................................1.5V
Output load..............................................See Figure 1
I
OL
Current Source
Device
Under
Test
-
+
Vz = 1.5V
(Bipolar
Supply)
+
Ceff = 50pf
I
Current Source
OH
NOTES:
Figure 1
Vz is programmable from -2V to + 7V.
IOL and IOH programmable from 0 to 16 mA.
Vz is typically the midpoint of VOH and VOL.
IOL and IOH are adjusted to simulate a typical resistive load
circuit.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
4
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(NOTE 5) (-55oC<TA < 125oC and -40oC to +85oC;VCC = 5V +10%)
SRAM AC
-35
DESCRIPTION
SYMBOL
UNITS
MIN MAX
READ CYCLE
tRC
tAA
tACS
tOH
tAOE
tLZCS
tLZOE
tHZCS
tHZOE
READ cycle time
35
35
35
2
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
Chip select access time
Output hold from address change
Output enable to output valid
Chip select to output in low Z1
Output enable to output in low Z1
Chip disable to output in high Z1
Output disable to output in high Z1
20
3
0
20
20
SRAM AC (SWE\ & SCS\ controlled)
-35
DESCRIPTION
SYMBOL
UNITS
MIN MAX
WRITE CYCLE
tWC
tCW
tAW
tAS
tAH
tDS
tDH
tWP1
tLZWE
tHZWE
WRITE cycle time
35
25
25
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip select to end of write
Address valid to end of write
Address setup time
Address hold from end of write
Data valid to end of write
Data hold time
0
20
0
WRITE pulse width
Output active from end of write1
Write enable to output in High-Z1
1. This parameter is guaranteed but not tested.
25
2
20
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
5
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
SRAM READ CYCLE NO. 1
t
RC
A0-A16
SI/O0-15
t
AA
t
OH
PREVIOUS DATA VALID
DATA VALID
SRAM READ CYCLE NO. 2
t
RC
ADDRESS
t
AA
SCS\
t
ACS
t
t
HZCS
LZCS
SOE\
t
t
HZOE
AOE
LZOE
t
DATA VALID
SI/O0-15
HIGHIMPEDANCE
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
6
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
SRAM WRITE CYCLE NO. 1
(Chip Select Controlled)
t
WC
A0-A16
SCS\
t
t
AW
t
AH
CW
t
t
AS
WP11
SWE\
t
LZWE
t
t
t
HZWE
DS
DATA VALID
DH
SI/O0-15
WRITE CYCLE NO. 2
(Write Enable Controlled)
t
WC
A0-A16
SCS\
t
AW
t
t
t
AS
AH
CW
t
WP21
SWE\
t
t
DH
DS
DATA VALID
SI/O0-15
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
7
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
FLASH ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS (READ ONLY)
(-55°C < TA < 125°C;VCC = 5V -5%/+10%)
Parameter
Symbol
Speed Options
JEDEC Std.
-35
Parameter Description
Test Setup
CE\=VIL,
Units
tAVAV
tRC
Read Cycle Time (Note 3)
Min
90
ns
OE\=VIL
CE\=VIL,
OE\=VIL
tAVQV
tELQV
tGLQV
tACC
Address to Output Delay
Max
Max
90
90
ns
ns
tCE
tOE
Chip Enable Low to Output Valid
Output Enable to Output Delay
Max
Min
35
0
ns
ns
Read
Output Enable Hold Time
(Note 3)
tOEH
Toggle and
Data\Polling
Min
10
20
ns
ns
Chip Enable High to Output High Z
(Note 2, 3)
tEHQZ
tGHQZ
tAXQX
tHZ
tDF
tOH
Max
Output Enable to Output High Z
(Note 2,3)
20
0
ns
ns
Output Hold Time from Addresses, CE\ or
OE\, Whichever Occurs First
Min
NOTES:
1. See Test Specification for test conditions.
2. Output driver disable time.
3. Guaranteed but not Tested.
Read OperationTimings
t
RC
Addresses
FCS\
Addresses Stable
t
ACC
t
t
DF
CE
OE\
t
OEH
t
CE
t
FWE\
OH
High-Z
High-Z
Outputs
Output Valid
OV
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
8
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55°C < TA < 125°C;VCC = 5V +/- 10%) WRITE / ERASE / PROGRAM
Erase and Program FWE\ Controlled
Parameter
Symbol
Speed Options Units
-90
Parameter Description
Write Cycle Time
JEDEC
Std.
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
tWC
Min
Min
Min
Min
Min
Min
90
0
ns
ns
ns
ns
ns
ns
tAS
tAH
Address Setup Time
45
45
Address Hold Time
tDS
Data Setup Time
tDH
tOES
Write Enable High to Input Transition
0
0
Output Enable Setup Time
Read Recover time Before Write
(OE\ high to FWE\ low)
tGHWL
tGHWL
Min
ns
0
0
tELWL
tWHEH
tCS
tCH
Min
Min
Min
Min
Min
Max
ns
ns
FSC\ Setup Time
FSC\ Hold Time
0
tWLWH
tWHWL
tWHWH1
tWHWH2
tWHWH3
tVCHEL
tWP
45
ns
Write Pulse Width
tWPH
ns
Write Pulse Width High
Programming Operation
Sector Erase Operation
20
300
15
tWHWH1
tWHWH2
tWHWH3
us
sec
Chip Erase Operation
VCC Setup Time
Max
Min
120
50
sec
us
Chip Program Time
Max
11
sec
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
9
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
Program OperationTimings
t
t
AS
WC
555h
Addresses
PA
PA
PA
t
AH
FCS\
OE\
t
t
GHWL
CH
t
WHWH1
t
WP
FWE\
t
t
t
WPH
DH
CS
DS
t
Status
DOUT
PD
FI/O0 - FI/O15
AOh
t
VCS
Vcc
NOTE: PA= Program Address, PD= Program data, DOUT is the true data at the program address.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
10
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
Chip/Sector Erase OperationTimings
t
t
AS
WC
2AAh
Addresses
SA
VA
VA
t
555h for Chip Erase
AH
FCS\
OE\
t
t
GHWL
CH
t
WHWH2
t
WP
FWE\
t
t
t
WPH
DH
CS
DS
t
In
30th
Complete
Progress
FI/O0 - FI/O7
55h
or FI/O8 - FI/O15
10 for Chip Erase
t
VCS
Vcc
NOTE: SA= Sector Address. VA = Valid Address for reading status data.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
11
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
Data Polling Timings (During Embedded Algorithms)
t
RC
VA
ACC
Addresses
VA
VA
t
t
CE
FCS\
OE\
t
CH
t
OE
t
t
OEH
DF
FWE\
t
OH
High-Z
High-Z
Complement
Valid Data
Valid Data
True
True
Complement
Status Data
FI/O7 or FI/O15
Status Data
FI/O0 - FI/O6
or FI/O8 - FI/O14
NOTE: VA=Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array
data read cycle.
Toggle Bit Timings ( During Embedded Algorithms)
t
RC
Addresses
VA
VA
VA
VA
ACC
CE
t
t
FCS\
OE\
t
CH
t
OE
t
t
OEH
DF
FWE\
t
OH
FI/O6 / FI/O2
or FI/O14 / FI/O10
Valid Status
Valid Status
Valid Status
Valid Status
(first read)
NOTE: VA=Valid address; not required for FI/O6 or FI/O14. Illustration shows first two status cycles after command
sequence, last status read cycle, and array data read cycle.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
12
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
MECHANICAL DEFINATIONS*
Package Designator QT
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
13
SRAM & FLASH
Mixed Module
Austin Semiconductor, Inc.
AS8SF384K32
ORDERING INFORMATION
EXAMPLE's: AS8SF384K32QT-35/XT or AS8SF384K32QT-35/MIL
Package
Device Number
Speed ns
Process
Type
AS8SF384K32
QT
-35
/*
*AVAILABLE PROCESSES
/IT= Industrial Temperature Range
/XT = Extended Temperature Range
/MIL = MIL-STD-883 para.1.2.2. NC
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8SF384K32
Rev. 1.2 06/05
14
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