MT5C1001C-25L/883C [AUSTIN]
1M x 1 SRAM SRAM MEMORY ARRAY; 1M ×1 SRAM SRAM存储器阵列型号: | MT5C1001C-25L/883C |
厂家: | AUSTIN SEMICONDUCTOR |
描述: | 1M x 1 SRAM SRAM MEMORY ARRAY |
文件: | 总13页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
1M x 1 SRAM
SRAM MEMORY ARRAY
PIN ASSIGNMENT
(Top View)
32-Pin LCC (EC)
32-Pin SOJ (DCJ)
AVAILABLE AS MILITARY
28-Pin DIP (C)
(400 MIL)
SPECIFICATIONS
• SMD 5962-92316
• MIL-STD-883
A10
A11
A12
NC
A13
A14
A15
NC
A16
A17
A18
A19
NC
1
2
3
4
5
6
7
8
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
NC
A9
A8
A7
A6
A5
A4
A3
NC
A2
NC
A1
A0
D
A10
A11
A12
A13
A14
A15
NC
1
2
3
4
5
6
7
8
9
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
A9
A8
A7
A6
A5
A4
NC
A3
A2
A1
A0
D
FEATURES
• High Speed: 20, 25, 35, and 45
• Battery Backup: 2V data retention
• Low power standby
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\ and OE\ options.
• All inputs and outputs are TTL compatible
• Three-state output
9
A16
A17
10
11
12
13
14
15
16
A18 10
A19 11
Q
12
Q
WE\
Vss
WE\ 13
Vss 14
CE\
CE\
32-Pin Flat Pack (F)
OPTIONS
• Timing
MARKING
1
A10
Vcc
NC
A9
A8
A7
A6
A5
A4
A3
NC
A2
NC
A1
A0
D
3 2
2
A11
A12
NC
A13
A14
A15
NC
A16
A17
A18
A19
NC
3 1
3
3 0
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
-20
4
2 9
5
2 8
-25
-35
-45
-55*
-70*
6
2 7
7
2 6
8
2 5
9
2 4
1 0
1 1
1 2
1 3
1 4
1 5
1 6
2 3
2 2
2 1
2 0
1 9
1 8
1 7
Q
WE\
Vss
• Package(s)
CE\
Ceramic DIP (400 mil)
CeramicLCC
Ceramic Flatpack
Ceramic SOJ
C
EC
F
No. 109
No. 207
No. 303
No. 501
GENERAL DESCRIPTION
DCJ
The MT5C1001 employs low power, high-performance
silicon-gate CMOS technology. Static design eliminates the
need for external clocks or timing strobes while CMOS circuitry
reduces power consumption and provides for greater
reliability.
• OperatingTemperature Ranges
Industrial (-40oC to +85oC)
Military (-55oC to +125oC)
IT
XT
For flexibility in high-speed memory applications, ASI
offers chip enable (CE\) and output enable (OE\) capability.
These enhancements can place the outputs in High-Z for addi-
tional flexibility in system design. Writing to these devices is
accomplished when write enable (WE|) and CE\ inputs are both
LOW. Reading is accomplished when WE\ remains HIGH while
CE\ and OE\ go LOW. The devices offer a reduced power
standby mode when disabled. This allows system designs to
achieve low standby power requirements.
• 2V data retention/low power
L
*Electrical characteristics identical to those provided for the
45ns access devices.
For more products and information
please visit our web site at
The “L” version provides an approximate 50 percent
www.austinsemiconductor.com
reduction in CMOS standby current (ISBC2) over the standard
version.
All devices operation from a single +5V power supply
and all inputs and outputs are fully TTL compatible.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
1
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
Vss
A6
A5
D
A4
Q
1,048,576-BIT
MEMORY ARRAY
A3
CE\
A15
A14
A13
A8
512 rows x 2048
columns
WE\
POWER
DOWN
A7
COLUMN DECODER
A2 A1 A16 A0 A17 A18 A19 A10 A9 A12 A11
TRUTHTABLE
PIN ASSIGNMENTS
PIN
ASSIGNMENT
MODE
CE\
WE\
X
H
OUTPUT
HIGH-Z
Q
POWER
STANDBY
ACTIVE
STANDBY
READ
H
L
A0-A19
Address Inputs
WE\
CE\
D
Write Enable
Chip Enable
Data Input
WRITE
L
L
HIGH-Z
ACTIVE
Q
NC
Data Output
No Connection
VCC
VSS
+5V Power Supply
Ground
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
2
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
ABSOLUTE MAXIMUM RATINGS*
Voltage onAny Input Relative to Vss................................-.5V to +7V
Voltage on Vcc Supply Relative to Vss...............................-.5V to +7V
VoltageApplied to Q............................................................-.5V to +6V
Storage Temperature......................................................-65oC to +150oC
Power Dissipation..............................................................................1W
Short Circuit Output Current.........................................................20mA
Lead Temperature (soldering 10 seconds)....................................+260oC
Junction Temperature..................................................................+175oC
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
2.2
-0.5
-5
MAX
VCC+0.5
0.8
UNITS
NOTES
1
VIH
V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
VIL
ILI
V
1, 2
µA
0V ≤ VIN ≤ VCC
5
Output(s) disabled
0V < VOUT < VCC
ILO
Output Leakage Current
µA
V
-5
5
0.4
I
OH = -4.0mA
VOH
VOL
Output High Voltage
Output Low Voltage
2.4
1
1
IOL = 8.0mA
V
MAX
PARAMETER
CONDITIONS
SYM
-20
-25
-35
-45 UNITS NOTES
CE\ < VIL; VCC = MAX
f = MAX = 1/tRC (MIN)
Output Open
Power Supply
Current: Operating
125
50
120
115
110
35
mA
mA
3
I
cc
CE\ > VIH; VCC = MAX
f = MAX = 1/tRC (MIN)
Output Open
Power Supply
Current: Standby
45
25
40
25
ISBT1
CE\ > VIH; All Other Inputs
ISBT2
25
25
mA
< VIH or > VIH, VCC = MAX
f = 0 Hz
CE\ > VCC -0.2V; VCC = MAX
VIL < VSS +0.2V
ISBC2
10
5
10
5
10
5
10
5
mA
mA
VIH > VCC -0.2V; f = 0 Hz
ISBC2
"L" Version Only
CAPACITANCE
PARAMETER
CONDITIONS
SYMBOL
MAXIMUM
UNITS
NOTES
CI
Input Capacitance (A3-A5, A15 -A17)
Output Capactiance (Q)
10
pF
pF
pF
4
4
TA = 25oC, f = 1MHz
Co
CI
8
8
VCC = 5V
s)
Input Capacitance: (All Other Input
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
3
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC;VCC = 5V +10%)
-20
-25
-35
-45
DESCRIPTION
READ CYCLE
MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
SYMBOL
tRC
tAA
tACE
tOH
READ cycle time
20
25
35
45
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
20
20
25
25
35
35
45
45
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Chip Enable to power-up time
3
3
3
3
3
3
3
3
tLZCE
tHZCE
tPU
4, 6, 7
8
10
25
15
35
15
45
4, 6, 7
0
0
0
0
4
4
tPD
Chip disable to power-down time
WRITE CYCLE
20
tWC
tCW
tAW
WRITE cycle time
20
15
15
0
25
16
16
0
35
20
20
0
45
25
25
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable to end of write
Address valid to end of write
Address setup time
tAS
tAH
Address hold from end of write
WRITE pulse width
1
1
1
1
tWP
15
8
16
10
0
20
13
0
25
15
0
tDS
Data setup time
tDH
Data hold time
0
tLZWE
tHZWE
Write disable to output in Low-Z
Write Enable to output in High-Z
3
3
3
3
7
0
9
0
10
0
13
0
13
4, 6, 7
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
4
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
ACTEST CONDITIONS
167Ω
167Ω
Input pulse levels ................................... Vss to 3.0V
Input rise and fall times ....................................... 5ns
Input timing reference levels ............................. 1.5V
Output reference levels ..................................... 1.5V
Output load .............................. See Figures 1 and 2
Q
Q
VTH =1.73V
VTH =1.73V
30pF
5pF
Fig. 1 Output Load
Equivalent
Fig. 2 Output Load
Equivalent
allowing for actual tester RC time constant.
7. At any given temperature and voltage condition,
NOTES
1. All voltages referenced to VSS (GND).
2. -3V for pulse width < 20ns
tHZCE is less than tLZCE, and tHZWE is less than tLZWE and
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
t
HZOE is less than tLZOE.
8. WE\ is HIGH for READ cycle.
unloaded, and f =
1
Hz.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. tRC = Read Cycle Time.
12. Chip enable (CE\) and write enable (WE\) can initiate and
terminate a WRITE cycle.
tRC (MIN)
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6. tLZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE are
specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV typical from steady state voltage,
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
CC for Retention Data
SYMBOL
VDR
MIN
2
MAX
--
UNITS
V
NOTES
CONDITIONS
V
VCC = 2V
VCC = 3V
ICCDR
1.0
mA
CE\ > (VCC - 0.2V)
and
Data Retention Current
VIN > (VCC - 0.2V)
1.5
--
mA
ns
or < 0.2V
tCDR
tR
Chip Deselect to Data
Retention Time
0
4
tRC
4, 11
Operation Recovery Time
ns
LOWVcc DATA RETENTIONWAVEFORM
DATA RETENTION MODE
VCC
4.5V
4.5V
VDR > 2V
tCDR
tR
VIH
VIL
VDR
CE\
DON’T CARE
UNDEFINED
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
5
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
READ CYCLE NO. 1 8, 9
t
RC
VALID
ADDRESS
DQ
t
AA
tOH
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2 7, 8, 10
tR
C
CE\
tLZCE
t
tHZCE
E
ACE
DATA VALID
Q
Icc
tPU
tP
D
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
6
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12
(Chip Enabled Controlled)
tWC
ADDRESS
tA
W
tAH
tAS
tCW
CE\
tW
P
WE\
tDH
t
DS
DATA VAILD
D
Q
HIGH Z
7, 12
WRITE CYCLE NO. 2
(Write Enabled Controlled)
tW
C
ADDRESS
tAW
tAW
tAH
tCW
CE\
tAS
t
WP
WE\
tDS
tDH
tDH
D
Q
DATA VALID
tHZWE
tLZWE
HIGH-Z
DON’T CARE
UNDEFINED
NOTE: Output enable (OE\) is inactive (HIGH).
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
7
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #109 (Package Designator C)
SMD #5962-92316, Case Outline T
D
A
Q
Pin 1
L
b
e
b1
E
NOTE
c
0o to 15o
E1
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.095
0.020
0.060
0.012
1.414
0.405
0.410
A
b
b1
c
D
E
E1
e
0.075
0.016
0.040
0.008
1.386
0.385
0.390
0.100 BSC
L
Q
0.125
0.040
0.175
0.060
NOTE: These dimensions are per the SMD. ASI's package dimensional limits
may differ, but they will be within the SMD limits.
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
8
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #207 (Package Designator EC)
SMD# 5962-92316, Case OutlineY
A
D1
L1
D
L
b1
e
b
E
b2
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.100
0.028
0.014
0.066
0.835
0.760
0.408
A
b
b1
b2
D
0.080
0.022
0.004
0.054
0.815
0.740
0.392
D1
E
e
0.050 BSC
L
L1
0.070
0.090
0.080
0.110
NOTE: These dimensions are per the SMD. ASI's package dimensional limits
may differ, but they will be within the SMD limits.
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
9
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #303 (Package Designator F)
SMD #5962-92316, Case Outline Z
E1
L
Pin 1
Index
e
32
1
D
b
D1
17
16
Bottom View
Top View
A
c
Q
E
SMD SPECIFICATIONS
MIN MAX
SYMBOL
A
b
c
D
D1
E
E1
e
0.097
0.015
0.004
0.812
0.745
0.324
0.405
0.117
0.019
0.006
0.828
0.755
0.336
0.415
0.050 BSC
L
Q
0.290
0.032
0.310
0.038
NOTE: These dimensions are per the SMD. ASI's package dimensional limits
may differ, but they will be within the SMD limits.
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
10
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #501 (Package Designator DCJ)
SMD #5962-92316, Case Outline U
A
D
e
D1
B1
E2
E1
b
E
A2
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.153
0.036
0.040
0.019
0.828
0.760
0.415
0.445
0.380
A
A2
B1
b
D
D1
E
E1
E2
e
0.135
0.026
0.030
0.015
0.812
0.745
0.405
0.435
0.360
0.050 BSC
NOTE: These dimensions are per the SMD. ASI's package dimensional limits
may differ, but they will be within the SMD limits.
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
11
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: MT5C1001EC-45/XT
EXAMPLE: MT5C1001C-20L/IT
Device
Number
Package Speed
Device
Number
Package Speed
Options** Process
Options** Process
Type
C
ns
-20
-25
-35
-40
-55
-70
Type
EC
EC
EC
EC
EC
EC
ns
-20
-25
-35
-40
-55
-70
MT5C1001
MT5C1001
MT5C1001
MT5C1001
MT5C1001
MT5C1001
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
MT5C1001
MT5C1001
MT5C1001
MT5C1001
MT5C1001
MT5C1001
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
C
C
C
C
C
EXAMPLE: MT5C1001DCJ-70/XT
EXAMPLE: MT5C1001F-25L/883C
Device
Number
Package Speed
Device
Number
Package Speed
Options** Process
Options** Process
Type
ns
-20
-25
-35
-40
-55
-70
Type
DCJ
DCJ
DCJ
DCJ
DCJ
DCJ
ns
-20
-25
-35
-40
-55
-70
MT5C1001
MT5C1001
MT5C1001
MT5C1001
MT5C1001
MT5C1001
F
F
F
F
F
F
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
MT5C1001
MT5C1001
MT5C1001
MT5C1001
MT5C1001
MT5C1001
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
*AVAILABLE PROCESSES
IT = IndustrialTemperature Range
XT = Extended Temperature Range
883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
** OPTIONS
L = 2V Data Retention/Low Power
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
12
SRAM
MT5C1001
Limited Availability
Austin Semiconductor, Inc.
ASITO DSCC PART NUMBER
CROSS REFERENCE*
ASI Package Designator EC
ASI Package Designator C
ASI Part #
SMD Part #
ASI Part #
SMD Part #
MT5C1001EC-20L/883C
MT5C1001EC-20/883C
MT5C1001EC-25L/883C
MT5C1001EC-25/883C
MT5C1001EC-35L/883C
MT5C1001EC-35/883C
MT5C1001EC-45L/883C
MT5C1001EC-45/883C
5962-9231608MYA
5962-9231604MYA
5962-9231607MYA
5962-9231603MYA
5962-9231606MYA
5962-9231602MYA
5962-9231605MYA
5962-9231601MYA
MT5C1001C-20L/883C
MT5C1001C-20/883C
MT5C1001C-25L/883C
MT5C1001C-25/883C
MT5C1001C-35L/883C
MT5C1001C-35/883C
MT5C1001C-45L/883C
MT5C1001C-45/883C
5962-9231608MTA
5962-9231604MTA
5962-9231607MTA
5962-9231603MTA
5962-9231606MTA
5962-9231602MTA
5962-9231605MTA
5962-9231601MTA
ASI Package Designator DCJ
ASI Package Designator F
ASI Part #
SMD Part #
ASI Part #
SMD Part #
MT5C1001DCJ-20L/883C
MT5C1001DCJ-20/883C
MT5C1001DCJ-25L/883C
MT5C1001DCJ-25/883C
MT5C1001DCJ-35L/883C
MT5C1001DCJ-35/883C
MT5C1001DCJ-45L/883C
MT5C1001DCJ-45/883C
5962-9231608MUA
5962-9231604MUA
5962-9231607MUA
5962-9231603MUA
5962-9231606MUA
5962-9231602MUA
5962-9231605MUA
5962-9231601MUA
MT5C1001F-20L/883C
MT5C1001F-20/883C
MT5C1001F-25L/883C
MT5C1001F-25/883C
MT5C1001F-35L/883C
MT5C1001F-35/883C
MT5C1001F-45L/883C
MT5C1001F-45/883C
5962-9231608MZA
5962-9231604MZA
5962-9231607MZA
5962-9231603MZA
5962-9231606MZA
5962-9231602MZA
5962-9231605MZA
5962-9231601MZA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1001
Rev. 2.1 06/05
13
相关型号:
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