MT5C1009EC-55L/IT [AUSTIN]
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE; 随着芯片和OUTPUT ENABLE 128K ×8 SRAM型号: | MT5C1009EC-55L/IT |
厂家: | AUSTIN SEMICONDUCTOR |
描述: | 128K x 8 SRAM WITH CHIP & OUTPUT ENABLE |
文件: | 总17页 (文件大小:247K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SRAM
MT5C1009
Austin Semiconductor, Inc.
128K x 8 SRAM
PIN ASSIGNMENT
(Top View)
WITH CHIP & OUTPUT ENABLE
32-Pin DIP (C, CW)
32-Pin SOJ (SOJ)
32-Pin LCC (EC)
32-Pin SOJ (DCJ)
AVAILABLE AS MILITARY
SPECIFICATIONS
•SMD 5962-89598
•MIL-STD-883
VCC
31 A15
NC
30
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2 10
A1 11
A0 12
DQ1 13
DQ2 14
DQ3 15
1
2
3
4
5
6
7
8
9
32
VCC
A15
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
29 WE\
28 A13
27 A8
WE\
A13
A8
A9
FEATURES
26 A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
25 A11
24 OE\
23 A10
22 CE\
21 DQ8
20 DQ7
19 DQ6
18 DQ5
17 DQ4
• Access Times: 15, 20, 25, 35, 45, 55 and 70 ns
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power CMOS process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\ and OE\ options.
• All inputs and outputs are TTL compatible
VSS
16
32-Pin LCC (ECA)
32-Pin Flat Pack (F)
4
3 2 1 32 31 30
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2 10
A1 11
A0 12
DQ1 13
DQ2 14
DQ3 15
VSS 16
1
2
3
4
5
6
7
8
9
32 VCC
31 A15
30 NC
29 WE\
28 A13
27 A8
OPTIONS
• Timing
MARKING
5
6
7
8
9
10
11
12
13
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
29
28
27
26
25
24
23
22
21
WE
\
A13
A8
26 A9
A9
25 A11
24 OE\
23 A10
22 CE\
21 DQ8
20 DQ7
19 DQ6
18 DQ5
17 DQ4
A11
\
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
-15
OE
A10
CE1
DQ8
\
-20
-25
-35
-45
-55*
-70*
14 15 16 17 18 19 20
GENERAL DESCRIPTION
• Package(s)•
The MT5C1009 is a 1,048,576-bit high-speed CMOS
static RAM organized as 131,072 words by 8 bits. This device
uses 8 common input and output lines and has an output en-
able pin which operate faster than address access times during
READ cycle.
For design flexibility in high-speed memory
applications, this device offers chip enable (CE\) and output
enable (OE\) features. These enhancements can place the out-
puts in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is accom-
plished when WE\ remains HIGH and CE\ and OE\ go LOW.
The devices offer a reduced power standby mode when dis-
abled, allowing system designs to achieve low standby power
requirements.
Ceramic DIP (400 mil)
Ceramic DIP (600 mil)
Ceramic LCC
Ceramic LCC
Ceramic Flatpack
Ceramic SOJ
C
No. 111
CW
EC
ECA
F
DCJ
SOJ
No. 112
No. 207
No. 208
No. 303
No. 501
No. 507
Ceramic SOJ
• 2V data retention/low power
L
*Electrical characteristics identical to those provided for the 45ns
access devices.
The “L” version offers a 2V data retention mode, re-
ducing current consumption to 2mW maximum.
All devices operate from a single +5V power supply
and all inputs and outputs are fully TTL compatible. It is par-
ticularly well suited for use in high-density, high-speed system
applications.
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
1
SRAM
MT5C1009
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
GND
A0
A1
A2
A3
A4
A5
A6
A7
A12
DQ8
262,144-BIT
MEMORY ARRAY
DQ1
CE\
COLUMN DECODER
OE\
WE\
A8 A9 A10 A11 A13 A14 A15 A16
POWER
DOWN
NOTE: The two least significant row address bits (A8 and A6) are encoded using gray code.
TRUTHTABLE
CE\
WE\
OE\
MODE
I/O PIN
SUPPLY CURRENT
I
I
SBT2, ISBC2
H
X
X
Not Selected
High-Z
SBT2, ISBC2
X
L
L
L
X
H
H
L
X
H
L
Not Selected
Output Disable
Read
High-Z
High-Z
DOUT
DIN
ICC
ICC
ICC
X
Write
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
2
SRAM
MT5C1009
Austin Semiconductor, Inc.
*Stresses at or greater than those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated
in the operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods will affect reliability. Refer to page 17 of this
datasheet for a technical note on this subject.
ABSOLUTEMAXIMUMRATINGS*
Supply Voltage Range (Vcc).............................-0.5V to +6.0V
Storage Temperature......................................-65°C to +150°C
Short Circuit Output Current (per I/O)….......................20mA
Voltage on any Pin Relative to Vss..................-0.5V to +7.0V
Max Junction Temperature**.......................................+150°C
Power Dissipation ...............................................................1 W
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow, and humidity.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC & -45oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION
CONDITIONS
SYM
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
2.2
V
1
VIH
VCC+0.5
Input Low (Logic 0) Voltage
Input Leakage Current
-0.5
-10
0.8
10
V
1, 2
VIL
ILI
µA
0V<VIN<VCC
Output(s) disabled
0V<VOUT<VCC
Output Leakage Current
-10
2.4
10
µA
ILO
Output High Voltage
Output Low Voltage
V
V
1
1
IOH=-4.0mA
IOL=8.0mA
VOH
VOL
0.4
MAX
PARAMETER
CONDITIONS
SYM
ICCSP
-15
-20
-25
-35
-45 UNITS NOTES
CE\ < VIL; OE\ = WE\ = VIH,
VCC = MAX, f = MAX = 1/tRC (MIN)
Output Open
250
250
140
140
135
125
115
mA
mA
3
Power Supply
Current: Operating
(1)L version only
140
25
130
25
125
25
ICCLP
CE\ > VIH; All Other Inputs
< VIL or > VIH, VCC = MAX
f = 0 Hz
Power Supply
Current: Standby
25
25
mA
ISBT
10
10
10
10
10
10
10
10
10
10
mA
mA
ISBCSP
CE\ > VCC -0.2V; VCC = MAX
Inputs = VIH or VIL
f = 0 Hz
ISBCLP
CAPACITANCE
DESCRIPTION
CONDITIONS
SYM
MAX
UNITS
NOTES
Input Capacitance (A0-A16)
Output Capacitance
12
20
14
pF
4
CI
TA = 25oC, f = 1MHz
VCC = 5V
pF
pF
4
4
CO
CI
Input Capacitance (CE\, WE\, OE\)
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
3
SRAM
MT5C1009
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC & -40oC to +85oC;VCC = 5.0V +10%)
-15
-20
-25
-35
-45
DESCRIPTION
READ CYCLE
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
SYMBOL
tRC
tAA
tACE
tOH
READ cycle time
15
20
25
35
45
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
15
15
20
20
25
25
35
35
45
45
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Output Enable access time
Output Enable to output in Low-Z
3
3
3
3
3
3
3
3
3
3
tLZCE
tHZCE
tAOE
tLZOE
tHZOE
4, 6, 7
4, 6, 7
7
7
8
6
10
10
15
15
20
20
0
0
0
0
0
4, 6, 7
4, 6, 7
Output disable to output in High-Z
WRITE CYCLE
7
6
10
15
20
tWC
tCW
tAW
WRITE cycle time
15
12
12
0
20
12
12
0
25
20
20
0
35
25
25
0
45
35
35
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable to end of write
Address valid to end of write
Address setup time
tAS
tAH
Address hold from end of write
WRITE pulse width (OE High)
Data setup time
0
0
0
0
0
tWP
12
8
12
10
0
20
15
0
25
20
0
35
20
0
tDS
tDH
Data hold time
0
tLZWE
tHZWE
Write disable to output in Low-Z
Write Enable to output in High-Z
5
5
5
5
5
4, 6, 7
4, 6, 7
7
9
10
15
20
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
4
SRAM
MT5C1009
Austin Semiconductor, Inc.
+5V
+5V
480
ACTEST CONDITIONS
480
30
Input pulse levels ................................... Vss to 3.0V
Input rise and fall times ....................................... 5ns
Input timing reference levels ............................. 1.5V
Output reference levels ..................................... 1.5V
Output load .............................. See Figures 1 and 2
Q
Q
255
5 pF
255
Fig. 1 Output Load
Equivalent
Fig. 2 Output Load
Equivalent
7. At any given temperature and voltage condition,
NOTES
t
tHZCE is less thantLZCE, and HZWE is less than
1. All voltages referenced to VSS (GND).
2. -2V for pulse width < 20ns
tLZWE and tHZOE is less than tLZOE.
8. WE\ is HIGH for READ cycle.
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
unloaded, and f =
1
Hz.
tRC (MIN)
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
t
11. RC = Read Cycle Time.
6. tLZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV typical from steady state voltage,
allowing for actual tester RC time constant.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS NOTES
2
---
V
VCC for Retention Data
VDR
CE\ > (VCC - 0.2V)
0.75
1.0
---
mA
mA
ICCDR1
*
VIN > (VCC - 0.2V)
or < 0.2V
Data Retention Current
VCC = 2V
ICCDR2
Chip Deselect to Data
Retention Time
tCDR
tR
0
ns
ns
4
Operation Recovery Time
4, 11
tRC
* Low Power, -20 device only
LOWVcc DATA RETENTIONWAVEFORM
DATA RETENTION MODE
VCC
4.5V
4.5V
VDR > 2V
tR
tCDR
VIH
VIL
VDR
CE1\
DON’T CARE
UNDEFINED
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
5
SRAM
MT5C1009
Austin Semiconductor, Inc.
READ CYCLE NO. 1 8, 9
t
RC
VALID
ADDRESS
DQ
tA
A
t
OH
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2 7, 8, 10, 12
tRC
CE\
tAOE
tHZOE
tLZOE
OE\
DQ
Icc
tLZCE
tHZCE
t
ACEE
DATA VALID
t
PU
tPD
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
6
SRAM
MT5C1009
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12, 13
(Chip Enabled Controlled)
tWC
ADDRESS
t
AW
t
AH
tAS
tCW
CE\
tWP
1
WE\
t
t
DH
DS
DATA VAILD
D
Q
HIGH Z
7, 12, 13
WRITE CYCLE NO. 2
(Write Enabled Controlled)
tWC
tWC
ADDRESS
t
tAW
AW
tA
tA
H
H
tCW
tCW
CE\
tAS
tAS
t
WP1
WE\
tDH
tDH
D
Q
DATA VALID
HIGH-Z
NOTE: Output enable (OE\) is inactive (HIGH).
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
7
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #111 (Package Designator C)
SMD 5962-89598, Case Outline Z
D
S1
S2
A
Q
L1
Pin 1
L
b
S
e
b1
E
NOTE
c
0o to 15o
E1
SMD SPECIFICATIONS
SYMBOL
MIN
---
0.014
0.038
0.008
---
MAX
0.232
0.023
0.065
0.015
1.700
0.405
0.420
A
b
b1
c
D
E
0.350
0.390
E1
e
0.100 BSC
L
L1
Q
0.125
0.150
0.015
---
0.200
---
0.060
0.100
---
S
S1
S2
NOTE:
0.005
0.005
Either configuration in detail A is allowed on SMD.
---
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
8
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #112 (Package Designator CW)
SMD 5962-89598, Case Outline X
D
A
Q
L
b
e
Pin 1
b2
E
C
eA
SMD Specifications
SYMBOL
MIN
MAX
0.111
0.020
0.050
0.011
1.615
0.605
A
b
b2
C
D
E
0.089
0.016
0.045
0.009
1.585
0.585
eA
e
0.600 BSC
0.100 BSC
Q
L
0.040
0.125
0.060
0.175
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
9
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #207 (Package Designator EC)
SMD 5962-89598, Case Outline U
See Detail A
A
L1
D
L
e
b
h x 45o
Detail A
E
L2
b2
b1
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.100
0.028
0.022
---
A
b
b1
b2
D
0.080
0.022
0.006
0.040
0.800
0.392
0.840
0.408
E
e
h
0.050 BSC
0.012 REF
L
L1
L2
0.070
0.090
0.003
0.080
0.110
0.015
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
10
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #208 (Package Designator ECA)
SMD 5962-89598, Case Outline M
D1
A
L1
e
E1
E
See Detail A
L
D
b2
B1
Detail A
b1
SMD SPECIFICATIONS
MIN
SYMBOL
MAX
0.080
0.028
0.014
0.050
0.458
A
B1
b1
b2
D
0.060
0.022
0.004
0.040
0.442
D1
E
0.300 BSC
0.540
0.560
E1
e
0.400 BSC
0.050 BSC
L
L1
0.045
0.075
0.055
0.095
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
11
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #303 (Package Designator F)
SMD 5962-89598, Case OutlineT
E
L
Pin 1
Index
e
32
1
D
b
17
16
Bottom View
S
S1
E1
Top View
A
c
Q
E2
E3
SMD SPECIFICATIONS
SYMBOL
MIN
0.097
0.015
0.003
---
0.400
---
0.180
0.030
MAX
0.125
0.019
0.009
0.830
0.420
0.450
---
A
b
c
D
E
E1
E2
E3
e
---
0.050 BSC
L
Q
S
0.250
0.026
---
0.370
0.045
0.045
---
S1
0.000
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
12
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #501 (Package Designator DCJ)
SMD 5962-89598, Case Outline 7
A
D
e
D1
B1
E2
E1
b
E
A2
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.144
0.036
0.040
0.019
0.828
0.755
0.415
0.445
0.380
A
A2
B1
b
D
D1
E
E1
E2
e
0.135
0.026
0.030
0.015
0.812
0.740
0.405
0.435
0.360
0.050 BSC
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
13
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #507 (Package Designator SOJ)
SMD 5962-89598, Case OutlineY
See Detail A
j
1
32
B
D1
B2
B1
D
E2
e2
e1
S1
A2
Base
Plane
17
16
B3
Seating
Plane
E
E1
Detail A
SMD SPECIFICATIONS
SYMBOL
MIN
0.120
0.088
MAX
0.165
0.120
A
A1
A2
B
B1
B2
B3
D
0.070 REF
0.010 REF
.030R TYP
0.020 REF
0.025
0.816
0.045
0.838
D1
E
E1
E2
e
e1
e2
j
0.75 REF
0.419
0.430
0.360
0.431
0.445
0.380
0.050 BSC
0.038 TYP
0.005
0.030
0.005 TYP
0.020 TYP
S
S1
0.040
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
14
SRAM
MT5C1009
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: MT5C1009C-25/XT
EXAMPLE: MT5C1009EC-45L/IT
Device
Number
Package Speed
Device
Number
Package Speed
Options** Process
Options** Process
Type
C
ns
Type
EC
ns
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
-15
-15
-20
-20
-25
-25
-35
-35
-45
-45
-55
-55
-70
-70
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
-15
-15
-20
-20
-25
-25
-35
-35
-45
-45
-55
-55
-70
-70
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
CW
C
ECA
EC
CW
C
ECA
EC
CW
C
ECA
EC
CW
C
ECA
EC
CW
C
ECA
EC
CW
C
ECA
EC
CW
ECA
EXAMPLE: MT5C1009F-70L/883C
EXAMPLE: MT5C1009DCJ-35/883C
Device
Number
Package Speed
Device
Number
Package Speed
Options** Process
Options** Process
Type
ns
Type
DCJ
SOJ
DCJ
SOJ
DCJ
SOJ
DCJ
SOJ
DCJ
SOJ
DCJ
SOJ
DCJ
SOJ
ns
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
-15
-15
-20
-20
-25
-25
-35
-35
-45
-45
-55
-55
-70
-70
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
MT5C1009
F
-15
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
F
F
F
F
F
F
-20
-25
-35
-45
-55
-70
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
** OPTIONS
L = 2V data retention, low power standby
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
15
SRAM
MT5C1009
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER CROSS REFERENCE
ASI Package Designator EC & ECA
ASI Package Designator C & CW
ASI Part #
SMD Part #
ASI Part #
SMD Part #
MT5C1009C-20/883C
MT5C1009C-20L/883C
MT5C1009C-25L/883C
MT5C1009C-25/883C
MT5C1009C-35L/883C
MT5C1009C-35/883C
MT5C1009C-45L/883C
MT5C1009C-45/883C
MT5C1009C-55L/883C
MT5C1009C-55/883C
MT5C1009C-70L/883C
MT5C1009C-70/883C
5962-8959839MZA
5962-8959840MZA
5962-8959812MZA
5962-8959829MZA
5962-8959811MZA
5962-8959828MZA
5962-8959810MZA
5962-8959827MZA
5962-8959809MZA
5962-8959826MZA
5962-8959808MZA
5962-8959825MZA
MT5C1009EC-20/883C
MT5C1009EC-20L/883C
MT5C1009EC-25L/883C
MT5C1009EC-25/883C
MT5C1009EC-35L/883C
MT5C1009EC-35/883C
MT5C1009EC-45L/883C
MT5C1009EC-45/883C
MT5C1009EC-55L/883C
MT5C1009EC-55/883C
MT5C1009EC-70L/883C
MT5C1009EC-70/883C
5962-8959839MUA
5962-8959840MUA
5962-8959812MUA
5962-8959829MUA
5962-8959811MUA
5962-8959828MUA
5962-8959810MUA
5962-8959827MUA
5962-8959809MUA
5962-8959826MUA
5962-8959808MUA
5962-8959825MUA
MT5C1009CW-20/883C
MT5C1009CW-20L/883C
MT5C1009CW-25L/883C
MT5C1009CW-25/883C
MT5C1009CW-35L/883C
MT5C1009CW-35/883C
MT5C1009CW-45L/883C
MT5C1009CW-45/883C
MT5C1009CW-55L/883C
MT5C1009CW-55/883C
MT5C1009CW-70L/883C
MT5C1009CW-70/883C
5962-8959839MXA
5962-8959840MXA
5962-8959812MXA
5962-8959829MXA
5962-8959811MXA
5962-8959828MXA
5962-8959810MXA
5962-8959827MXA
5962-8959809MXA
5962-8959826MXA
5962-8959808MXA
5962-8959825MXA
MT5C1009ECA-20/883C
MT5C1009ECA-20L/883C
MT5C1009ECA-25L/883C
MT5C1009ECA-25/883C
MT5C1009ECA-35L/883C
MT5C1009ECA-35/883C
MT5C1009ECA-45L/883C
MT5C1009ECA-45/883C
MT5C1009ECA-55L/883C
MT5C1009ECA-55/883C
MT5C1009ECA-70L/883C
MT5C1009ECA-70/883C
5962-8959839MMA
5962-8959840MMA
5962-8959812MMA
5962-8959829MMA
5962-8959811MMA
5962-8959828MMA
5962-8959810MMA
5962-8959827MMA
5962-8959809MMA
5962-8959826MMA
5962-8959808MMA
5962-8959825MMA
ASI Package Designator DCJ
ASI Package Designator F
ASI Part #
SMD Part #
ASI Part #
SMD Part #
MT5C1009DCJ-20/883C
MT5C1009DCJ-20L/883C
MT5C1009DCJ-25L/883C
MT5C1009DCJ-25/883C
MT5C1009DCJ-35L/883C
MT5C1009DCJ-35/883C
MT5C1009DCJ-45L/883C
MT5C1009DCJ-45/883C
MT5C1009DCJ-55L/883C
MT5C1009DCJ-55/883C
MT5C1009DCJ-70L/883C
MT5C1009DCJ-70/883C
5962-8959839M7A
5962-8959840M7A
5962-8959812M7A
5962-8959829M7A
5962-8959811M7A
5962-8959828M7A
5962-8959810M7A
5962-8959827M7A
5962-8959809M7A
5962-8959826M7A
5962-8959808M7A
5962-8959825M7A
MT5C1009F-20/883C
MT5C1009F-20L/883C
MT5C1009F-25L/883C
MT5C1009F-25/883C
MT5C1009F-35L/883C
MT5C1009F-35/883C
MT5C1009F-45L/883C
MT5C1009F-45/883C
MT5C1009F-55L/883C
MT5C1009F-55/883C
MT5C1009F-70L/883C
MT5C1009F-70/883C
5962-8959839MTA
5962-8959840MTA
5962-8959812MTA
5962-8959829MTA
5962-8959811MTA
5962-8959828MTA
5962-8959810MTA
5962-8959827MTA
5962-8959809MTA
5962-8959826MTA
5962-8959808MTA
5962-8959825MTA
ASI Package Designator SOJ
ASI Part #
SMD Part #
MT5C1009SOJ-20/883C
MT5C1009SOJ-20L/883C
MT5C1009SOJ-25L/883C
MT5C1009SOJ-25/883C
MT5C1009SOJ-35L/883C
MT5C1009SOJ-35/883C
MT5C1009SOJ-45L/883C
MT5C1009SOJ-45/883C
MT5C1009SOJ-55L/883C
MT5C1009SOJ-55/883C
MT5C1009SOJ-70L/883C
MT5C1009SOJ-70/883C
5962-8959839M7A
5962-8959840M7A
5962-8959812M7A
5962-8959829M7A
5962-8959811M7A
5962-8959828M7A
5962-8959810M7A
5962-8959827M7A
5962-8959809M7A
5962-8959826M7A
5962-8959808M7A
5962-8959825M7A
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
16
SRAM
MT5C1009
Austin Semiconductor, Inc.
DATE: 2/6/01
Technical Note:
128Kx8 SRAM – Maximum Recommended Supply
Voltage and AmbientTemperature
Compliance:
This product fully meets and is tested in compliance with SMD# 5962-89598 and tested in accordance
with JESD78.
Specific Product Affected:
Die Manufacturer: Alliance Semiconductor Corporation
Die Name: AS2008SA
Device Types: MT5C1008 , MT5C1009
Speed Grades: All
Package Designators: All
Identifying Date Code Marking: Change implemented on product starting with date code 0100.
Characteristic Identified:
Austin Semiconductor, Inc. has received notification from this die vendor, Alliance Semiconductor Corp.,
that operation at high Vcc’s of 6 volts and beyond may result in a latch-up condition. This can cause
permanent damage to the device.
Recommendation:
During use in system applications and during manufacturing processes, including Burn-In and Test, the
devices should not be subjected to Vcc Supply Voltages higher than 5.5Volts at 125°C.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1009
Rev. 5.5 8/01
17
相关型号:
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