MT5C2568F-100/883C [AUSTIN]

32K x 8 SRAM SRAM MEMORY ARRAY; 32K ×8 SRAM SRAM存储器阵列
MT5C2568F-100/883C
型号: MT5C2568F-100/883C
厂家: AUSTIN SEMICONDUCTOR    AUSTIN SEMICONDUCTOR
描述:

32K x 8 SRAM SRAM MEMORY ARRAY
32K ×8 SRAM SRAM存储器阵列

存储 静态存储器
文件: 总16页 (文件大小:141K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
32K x 8 SRAM  
SRAM MEMORY ARRAY  
PIN ASSIGNMENT  
(Top View)  
AVAILABLE AS MILITARY  
28-PIN SOJ (DCJ)  
28-Pin DIP (C, CW)  
32-Pin LCC (ECW)  
SPECIFICATIONS  
•SMD5962-88662  
•SMD5962-88552  
•MIL-STD-883  
VCC  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
1
2
3
4
5
6
7
8
9
28  
4
3 2 1 32 31 30  
27 WE\  
26 A13  
25 A8  
5
6
7
8
9
10  
11  
12  
13  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
NC  
DQ1  
29  
28  
27  
26  
25  
24  
23  
22  
21  
A8  
A9  
A11  
NC  
OE\  
A10  
CE\  
DQ8  
DQ7  
24 A9  
23 A11  
22 OE\  
21 A10  
20 CE\  
19 DQ8  
18 DQ7  
17 DQ6  
16 DQ5  
15 DQ4  
FEATURES  
• Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns  
• Battery Backup: 2V data retention  
• Low power standby  
• High-performance, low-power CMOS double-metal process  
• Single +5V (+10%) Power Supply  
• Easy memory expansion with CE\  
• All inputs and outputs are TTL compatible  
A0 10  
DQ1 11  
DQ2 12  
DQ3 13  
14 15 16 17 18 19 20  
VSS  
14  
28-Pin LCC (EC)  
3
2 1 28 27  
28-Pin Flat Pack (F)  
OPTIONS  
Timing  
MARKING  
4
5
6
7
8
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ1  
DQ2  
26  
25  
24  
23  
22  
21  
20  
19  
18  
A13  
A8  
A9  
A11  
OE\  
A10  
CE\  
DQ8  
DQ7  
12ns access1  
15ns access1  
20ns access  
25ns access  
35ns access  
45ns access  
55ns access2  
70ns access2  
100ns access  
-12  
-15  
-20  
-25  
-35  
-45  
-55  
-70  
-100  
VCC  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0 10  
DQ1 11  
DQ2 12  
DQ3 13  
1
2
3
4
5
6
7
8
9
28  
27 WE\  
26 A13  
25 A8  
24 A9  
9
23 A11  
22 OE\  
21 A10  
20 CE\  
19 DQ8  
18 DQ7  
17 DQ6  
16 DQ5  
15 DQ4  
10  
11  
12  
13 14 15 16 17  
VSS  
14  
Package(s)3  
Ceramic DIP (300 mil)  
Ceramic DIP (600 mil)  
Ceramic LCC (28 leads)  
Ceramic LCC (32 leads)  
Ceramic Flat Pack  
Ceramic SOJ  
C
No. 108  
GENERAL DESCRIPTION  
CW  
EC  
ECW  
F
No. 110  
No. 204  
No. 208  
No. 302  
No. 500  
The Austin Semiconductor SRAM family employs  
high-speed, low power CMOS designs using a four-transistor  
memory cell. These SRAMs are fabricated using double-layer  
metal, double-layer polysilicon technology.  
For flexibility in high-speed memory applications,  
Austin Semiconductor offers chip enable (CE\) and output  
enable (OE\) capability. These enhancements can place the  
outputs in High-Z for additional flexibility in system design.  
Writing to these devices is accomplished when write  
enable (WE\) and CE\ inputs are both LOW. Reading is  
accomplished when WE\ remains HIGH and CE\ and OE\ go  
LOW. The device offers a reduced power standby mode when  
disabled. This allows system designs to achieve low standby  
power requirements.  
DCJ  
Operating Temperature Ranges  
Military -55oC to +125oC  
Industrial -40oC to +85oC  
XT  
IT  
• 2V data retention/low power  
L
NOTES:  
1. -12 available in IT only.  
2. Electrical characteristics identical to those provided for the  
45ns access devices.  
3. Plastic SOJ (DJ Package) is available on the AS5C2568 datasheet.  
The “L” version provides a battery backup/low  
voltage data retention mode, offering 2mW maximum power  
dissipation at 2 volts. All devices operate from a single +5V  
power supply and all inputs and outputs are fully TTL  
compatible.  
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
1
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
FUNCTIONAL BLOCK DIAGRAM  
A0  
Vcc  
256 x 1024  
GND  
DECODER  
MEMORY ARRAY  
A14  
I/O0  
I/O  
COLUMN I/O  
DATA  
CIRCUIT  
I/O7  
9A128-1  
CE\  
OE\  
WE\  
CONTROL  
CIRCUIT  
TRUTHTABLE  
MODE  
STANDBY  
READ  
READ  
WRITE  
OE\  
X
L
H
X
CE\  
H
L
L
L
WE\  
DQ  
POWER  
X
H
H
L
HIGH-Z STANDBY  
Q
HIGH-Z  
D
ACTIVE  
ACTIVE  
ACTIVE  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
2
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
ABSOLUTE MAXIMUM RATINGS*  
Voltage on Any Input or DQ Relative  
*Stresses greater than those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. This is  
a stress rating only and functional operation of the device at  
these or any other conditions above those indicated in the  
operation section of this specification is not implied. Exposure  
to absolute maximum rating conditions for extended periods  
may affect reliability.  
to Vss..................................................................-0.5V to Vcc +0.5V  
Voltage on Vcc Supply Relative to Vss.......................-1V to +7V  
StorageTemperature..............................................-65oC to +150oC  
Power Dissipation.......................................................................1W  
Short Circuit Output Current.................................................50mA  
Lead Temperature (soldering 10 seconds)........................+260oC  
Max. Junction Temperature.................................................+175oC  
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS  
(-55oC < TC < 125oC or -40oC to +85oC;VCC = 5.0V +10%)  
DESCRIPTION  
CONDITIONS  
SYM MIN  
MAX UNITS NOTES  
Input High (Logic 1) Voltage  
2.2  
-0.5  
-10  
V
V
1
VIH  
VIL  
ILI  
V
CC+0.5  
Input Low (Logic 0) Voltage  
Input Leakage Current  
0.8  
1,2  
10  
µA  
0V<VIN<VCC  
Output(s) disabled  
0V<VOUT<VCC  
Output Leakage Current  
ILo -10  
10  
µA  
Output High Voltage  
Output Low Voltage  
2.4  
V
V
1
1
I
OH = -4.0mA  
VOH  
VOL  
0.4  
IOL = 8.0mA  
MAX  
DESCRIPTION  
CONDITIONS  
SYM -12 -15 -20 -25 -35 -45 UNITS NOTES  
CE\<VIL; Vcc = MAX  
Power Supply  
Current: Operating  
f = MAX = 1/ tRC (MIN)  
Output Open  
Icc  
190 180 170 160 150 150  
60 50 40 35 35 35  
20 20 20 20 20 20  
mA  
mA  
3
CE\<VIH; Outputs Open  
Vcc = MAX  
TTL  
ISBT  
Power Supply  
Current: Standby  
CE\>Vcc-0.2V; Vcc = MAX  
VIN<+0.2V or >Vcc-0.2V;  
f = 0 Hz, Outputs Open  
ISBC  
mA  
mA  
CMOS  
"L" Version Only  
4
4
4
4
4
4
ISBC2  
CAPACITANCE  
PARAMETER  
CONDITIONS  
SYM  
MAX  
UNITS  
NOTES  
TA = 25oC, f = 1MHz  
Vcc = 5V  
Input Capacitance  
CIN  
CIO  
11  
pF  
4
Output Capacitance  
11  
pF  
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
3
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS  
(Note 5) (-55oC < TC < 125oC or -40oC to +85oC;VCC = 5.0V +10%)  
-12  
-15  
-20  
-25  
-35  
-45  
DESCRIPTION  
READ CYCLE  
SYM  
UNITS NOTES  
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX  
READ cycle time  
12  
15  
20  
25  
35  
45  
ns  
ns  
ns  
ns  
tRC  
tAA  
tACE  
tOH  
Address access time  
12  
12  
15  
15  
20  
20  
25  
25  
35  
35  
45  
45  
Chip enable access time  
Output hold from address change  
Chip enable to output in Low-Z  
Chip disable to output in High-Z  
Output enable to access time  
Output enable to output in Low-Z  
2
2
3
3
3
3
3
3
3
3
3
3
ns  
ns  
ns  
ns  
ns  
7
tLZCE  
tHZCE  
tAOE  
tLZOE  
tHZOE  
7
6
10  
8
10  
10  
15  
15  
35  
20  
20  
20  
6, 7  
0
0
0
0
2
0
Output disable to output in High-Z  
WRITE CYCLE  
7
10  
10  
15  
35  
20  
6
WRITE cycle time  
12  
10  
10  
0
15  
12  
12  
0
20  
15  
15  
0
25  
20  
20  
0
35  
30  
30  
0
45  
40  
40  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tWC  
tCW  
tAW  
Chip enable to end of write  
Address valid to end of write  
Address setup time  
tAS  
Address hold from end of write  
WRITE pulse width  
2
0
0
0
0
0
tAH  
10  
8
12  
10  
0
15  
10  
0
20  
15  
0
30  
20  
0
40  
20  
3
tWP  
Data setup time  
tDS  
Data hold time  
0
tDH  
Write disable to output in Low-Z  
Write enable to output in High-Z  
0
0
0
3
3
3
7
tLZWE  
tHZWE  
7
10  
10  
15  
35  
20  
6, 7  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
4
SRAM  
MT5C2568  
AS5C2568  
+5V  
Austin Semiconductor, Inc.  
+5V  
ACTEST CONDITIONS  
Input pulse levels....................................................Vss to 3V  
Input rise and fall times.....................................................5ns  
Input timing reference level.............................................1.5V  
Output reference level......................................................1.5V  
Output load.................................................See figures 1 & 2  
480  
480  
Q
Q
30 pF  
255  
5 pF  
255  
Fig. 1  
Fig. 2  
OUTPUT LOAD  
EQUIVALENT  
OUTPUT LOAD  
EQUIVALENT  
NOTES  
7. At any given temperature and voltage condition, tHZCE  
1. All voltages referenced to VSS (GND).  
2. -3V for pulse width < 20ns  
is less thantLZCE, and HZWE is less than tLZWE.  
t
3. ICC is dependent on output loading and cycle rates. The  
specified value applies with the outputs unloaded, and  
8. WE\ is HIGH for READ cycle.  
9. Device is continuously selected. Chip enables and  
output enables are held in their active state.  
10. Address valid prior to, or coincident with, latest  
occurring chip enable.  
f =  
1
Hz.  
tRC (MIN)  
4. This parameter is guaranteed but not tested.  
5. Test conditions as specified with the output loading as  
shown in Fig. 1 unless otherwise noted.  
6. t HZCE, tHZOE and tHZWE are specified with CL = 5pF  
as in Fig. 2. Transition is measured ±500mV typical from  
steady state voltage, allowing for actual tester RC time  
constant.  
t
11. RC = Read Cycle Time.  
12. Chip enable (CE\) and write enable (WE\) can initiate and  
terminate a WRITE cycle.  
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)  
DESCRIPTION  
CONDITIONS  
SYM  
MIN  
MAX  
UNITS  
NOTES  
2
V
VCC for Retention Data  
VDR  
CE\ > (VCC-0.2V)  
Data Retention Current  
ICCDR  
1
mA  
VIN > (VCC-0.2V)  
or < 0.2V  
Chip Deselect to Data  
Retention Time  
tCDR  
tR  
0
--  
ns  
ns  
4
Operation Recovery Time  
4, 11  
tRC  
LOW Vcc DATA RETENTION WAVEFORM  
DATA RETENTION MODE  
VCC  
4.5V  
4.5V  
VDR > 2V  
t
tCDR  
R
VIH  
VIL  
VDR  
CE\  
DON’T CARE  
UNDEFINED  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
5
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
8, 9  
READ CYCLE NO. 1  
tRC  
VALID  
ADDRESS  
DQ  
tAA  
tOH  
PREVIOUS DATA VALID  
DATA VALID  
7, 8, 10, 12  
READ CYCLE NO. 2  
tRC  
CE\  
tAOE  
tHZOE  
tHZCE  
tLZOE  
OE\  
DQ  
Icc  
tLZCE  
tPU  
tACE  
DATA VALID  
tPD  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
6
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
12  
WRITE CYCLE NO. 1  
(Chip Enabled Controlled)  
tWC  
ADDRESS  
tAW  
tAH  
tAS  
tCW  
CE\  
tWP1  
WE\  
tDS  
tDH  
DATA VAILD  
D
Q
HIGH Z  
7, 12  
WRITE CYCLE NO. 2  
(Write Enabled Controlled)  
tWC  
ADDRESS  
tAW  
tCW  
tAH  
CE\  
tAS  
tWP1  
WE\  
tDH  
D
Q
DATA VALID  
HIGH-Z  
NOTE: Output enable (OE\) is inactive (HIGH).  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
7
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
MECHANICAL DEFINITIONS*  
ASI Case #108 (Package Designator C)  
SMD 5962-88662, Case Outline N  
D
S2  
A
Q
L
E
e
b
S1  
b2  
eA  
c
SMD SPECIFICATIONS  
MIN  
SYMBOL  
MAX  
0.225  
0.026  
0.065  
0.018  
1.485  
0.310  
A
b
b2  
c
D
E
---  
0.014  
0.045  
0.008  
---  
0.240  
eA  
e
0.300 BSC  
0.100 BSC  
L
0.125  
0.015  
0.005  
0.005  
0.200  
0.070  
---  
Q
S1  
S2  
---  
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may  
differ, but they will be within the SMD limits.  
* All measurements are in inches.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
8
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
MECHANICAL DEFINITIONS*  
ASI Case #110 (Package Designator CW)  
SMD 5962-88662, Case Outline X  
D
S2  
A
Q
L
E
e
b
S1  
b2  
eA  
c
SMD SPECIFICATIONS  
MIN  
SYMBOL  
MAX  
0.232  
0.026  
0.065  
0.018  
1.490  
0.610  
A
b
b2  
c
D
E
---  
0.014  
0.045  
0.008  
---  
0.500  
eA  
e
0.600 BSC  
0.100 BSC  
L
0.125  
0.015  
0.005  
0.005  
0.200  
0.060  
---  
Q
S1  
S2  
---  
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may  
differ, but they will be within the SMD limits.  
* All measurements are in inches.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
9
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
MECHANICAL DEFINITIONS*  
ASI Case #204 (Package Designator EC)  
SMD 5962-88662, Case Outline U  
D1  
B2  
D2  
L1  
E3  
E
e
E1  
E2  
D
hx45o  
L
B1  
D3  
A
A1  
SMD SPECIFICATIONS  
SYMBOL  
MIN  
MAX  
0.120  
0.088  
0.028  
A
A1  
B1  
B2  
D
0.060  
0.050  
0.022  
0.072 REF  
0.342  
0.358  
D1  
D2  
D3  
E
0.200 BSC  
0.100 BSC  
---  
0.540  
0.358  
0.560  
E1  
E2  
E3  
e
0.400 BSC  
0.200 BSC  
---  
0.558  
0.050 BSC  
0.040 REF  
h
L
L1  
0.045  
0.075  
0.055  
0.095  
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may  
differ, but they will be within the SMD limits.  
* All measurements are in inches.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
10  
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
MECHANICAL DEFINITIONS*  
ASI Case #208 (Package Designator ECW)  
SMD 5962-88662, Case Outline Y  
D1  
B2  
D2  
L1  
E3  
E
e
E1  
E2  
D
hx45o  
L
B1  
D3  
A
A1  
SMD SPECIFICATIONS  
SYMBOL  
MIN  
MAX  
0.120  
0.088  
0.028  
A
A1  
B1  
B2  
D
0.060  
0.050  
0.022  
0.072 REF  
0.442  
0.458  
D1  
D2  
D3  
E
0.300 BSC  
0.150 BSC  
---  
0.540  
0.458  
0.560  
E1  
E2  
E3  
e
0.400 BSC  
0.200 BSC  
---  
0.558  
0.050 BSC  
0.040 REF  
h
L
L1  
0.045  
0.075  
0.055  
0.095  
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may  
differ, but they will be within the SMD limits.  
* All measurements are in inches.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
11  
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
MECHANICAL DEFINITIONS*  
ASI Case #302 (Package Designator F)  
SMD 5962-88662, Case Outline T  
e
b
D
S
Top View  
E
L
A
c
Q
E2  
E3  
SMD SPECIFICATIONS  
MIN  
SYMBOL  
MAX  
0.130  
0.019  
0.009  
0.740  
0.420  
---  
A
b
c
D
E
E2  
E3  
e
0.090  
0.015  
0.004  
---  
0.380  
0.180  
0.030  
---  
0.050 BSC  
L
Q
S
0.250  
0.026  
0.000  
0.370  
0.045  
0.045  
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may  
differ, but they will be within the SMD limits.  
* All measurements are in inches.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
12  
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
MECHANICAL DEFINITIONS*  
ASI Case #500 (Package Designator DCJ)  
A
A3  
D
e
B1  
E1  
b
E
A2  
ASI SPECIFICATIONS  
SYMBOL  
MIN  
0.116  
0.026  
---  
0.030  
0.015  
---  
MAX  
0.166  
0.036  
0.166  
0.040  
0.019  
0.740  
0.420  
0.410  
A
A2  
A3  
B1  
b
D
E
E1  
e
0.380  
0.395  
0.050 BSC  
* All measurements are in inches.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
13  
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
ORDERING INFORMATION  
EXAMPLE: MT5C2568CW-25L/XT  
EXAMPLE: MT5C2568ECW-15L/IT  
Package  
Type  
Package  
Type  
Device Number  
Speed ns Options** Process  
Device Number  
Speed ns Options** Process  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
C
CW  
C
CW  
C
CW  
C
CW  
C
CW  
C
CW  
C
CW  
C
CW  
-12  
-12  
-15  
-15  
-20  
-20  
-25  
-25  
-35  
-35  
-45  
-45  
-55  
-55  
-70  
-70  
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
EC  
ECW  
EC  
ECW  
EC  
ECW  
EC  
ECW  
EC  
ECW  
EC  
ECW  
EC  
ECW  
EC  
ECW  
-12  
-12  
-15  
-15  
-20  
-20  
-25  
-25  
-35  
-35  
-45  
-45  
-55  
-55  
-70  
-70  
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
MT5C2568  
CW  
-100  
L
/*  
MT5C2568  
ECW  
-100  
L
/*  
EXAMPLE: MT5C2568F-55/XT  
EXAMPLE: MT5C2568DCJ-70L/IT  
Package  
Device Number  
Type  
Package  
Type  
Speed ns Options** Process  
Device Number  
Speed ns Options** Process  
/*  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
F
F
F
F
F
F
F
F
F
-12  
-15  
-20  
-25  
-35  
-45  
-55  
-70  
-100  
L
L
L
L
L
L
L
L
L
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
MT5C2568  
DCJ  
-12  
-15  
-20  
-25  
-35  
-45  
-55  
-70  
L
L
L
L
L
L
L
L
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
/*  
DCJ  
DCJ  
DCJ  
DCJ  
DCJ  
DCJ  
DCJ  
*AVAILABLE PROCESSES  
IT= Industrial Temperature Range  
XT = Extended Temperature Range  
883C = Full Military Processing  
-40oC to +85oC  
-55oC to +125oC  
-55oC to +125oC  
12ns offered in IT only  
**DEFINITION OF OPTIONS  
2V Data Retention / Low Power  
L
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
14  
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
ASI TO DSCC PART NUMBER  
CROSS REFERENCE*  
ASI Package Designator C & CW  
ASI Package Designator EC & ECW  
ASI Part #  
SMD Part #  
5962-8866207NX  
5962-8866206NX  
5962-8866205NX  
5962-8866204NX  
5962-8866203NX  
5962-8866202NX  
ASI Part #  
SMD Part #  
5962-8866207UX  
5962-8866206UX  
5962-8866205UX  
5962-8866204UX  
5962-8866203UX  
5962-8866202UX  
MT5C2568C-20/883C  
MT5C2568C-25/883C  
MT5C2568C-35/883C  
MT5C2568C-45/883C  
MT5C2568C-55/883C  
MT5C2568C-70/883C  
MT5C2568EC-20/883C  
MT5C2568EC-25/883C  
MT5C2568EC-35/883C  
MT5C2568EC-45/883C  
MT5C2568EC-55/883C  
MT5C2568EC-70/883C  
MT5C2568CW-20/883C  
MT5C2568CW-25/883C  
MT5C2568CW-35/883C  
MT5C2568CW-45/883C  
MT5C2568CW-55/883C  
MT5C2568CW-70/883C  
MT5C2568CW-100/883C  
5962-8866207XX  
5962-8866206XX  
5962-8866205XX  
5962-8866204XX  
5962-8866203XX  
5962-8866202XX  
5962-8866201XX  
MT5C2568ECW-20/883C  
MT5C2568ECW-25/883C  
MT5C2568ECW-35/883C  
MT5C2568ECW-45/883C  
MT5C2568ECW-55/883C  
MT5C2568ECW-70/883C  
MT5C2568ECW-100/883C  
5962-8866207YX  
5962-8866206YX  
5962-8866205YX  
5962-8866204YX  
5962-8866203YX  
5962-8866202YX  
5962-8866201YX  
AS5C2568C-12L/883C  
AS5C2568C-15L/883C  
AS5C2568C-17L/883C  
AS5C2568C-20L/883C  
AS5C2568C-25L/883C  
AS5C2568C-35L/883C  
AS5C2568C-45L/883C  
AS5C2568C-55L/883C  
AS5C2568C-70L/883C  
5962-8855213UA  
5962-8855212UA  
5962-8855211UA  
5962-8855210UA  
5962-8855206UA  
5962-8855205UA  
5962-8855209UA  
5962-8855208UA  
5962-8855207UA  
AS5C2568EC-12L/883C  
AS5C2568EC-15L/883C  
AS5C2568EC-17L/883C  
AS5C2568EC-20L/883C  
AS5C2568EC-25L/883C  
AS5C2568EC-35L/883C  
AS5C2568EC-45L/883C  
AS5C2568EC-55L/883C  
AS5C2568EC-70L/883C  
5962-8855213MA  
5962-8855212MA  
5962-8855211MA  
5962-8855210MA  
5962-8855206MA  
5962-8855205MA  
5962-8855209MA  
5962-8855208MA  
5962-8855207MA  
AS5C2568CW-12L/883C  
AS5C2568CW-15L/883C  
AS5C2568CW-17L/883C  
AS5C2568CW-20L/883C  
AS5C2568CW-25L/883C  
AS5C2568CW-35L/883C  
AS5C2568CW-45L/883C  
AS5C2568CW-55L/883C  
AS5C2568CW-70L/883C  
5962-8855213XA  
5962-8855212XA  
5962-8855211XA  
5962-8855210XA  
5962-8855206XA  
5962-8855205XA  
5962-8855209XA  
5962-8855208XA  
5962-8855207XA  
AS5C2568ECW-12L/883C  
AS5C2568ECW-15L/883C  
AS5C2568ECW-17L/883C  
AS5C2568ECW-20L/883C  
AS5C2568ECW-25L/883C  
AS5C2568ECW-35L/883C  
AS5C2568ECW-45L/883C  
AS5C2568ECW-55L/883C  
AS5C2568ECW-70L/883C  
5962-8855213YA  
5962-8855212YA  
5962-8855211YA  
5962-8855210YA  
5962-8855206YA  
5962-8855205YA  
5962-8855209YA  
5962-8855208YA  
5962-8855207YA  
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
15  
SRAM  
MT5C2568  
AS5C2568  
Austin Semiconductor, Inc.  
ASI TO DSCC PART NUMBER  
CROSS REFERENCE*  
ASI Package Designator F  
ASI Part #  
SMD Part #  
5962-8866207TX  
5962-8866206TX  
5962-8866205TX  
5962-8866204TX  
5962-8866203TX  
5962-8866202TX  
5962-8866201TX  
MT5C2568F-20/883C  
MT5C2568F-25/883C  
MT5C2568F-35/883C  
MT5C2568F-45/883C  
MT5C2568F-55/883C  
MT5C2568F-70/883C  
MT5C2568F-100/883C  
AS5C2568F-12L/883C  
AS5C2568F-15L/883C  
AS5C2568F-17L/883C  
AS5C2568F-20L/883C  
AS5C2568F-25L/883C  
AS5C2568F-35L/883C  
AS5C2568F-45L/883C  
AS5C2568F-55L/883C  
AS5C2568F-70L/883C  
5962-8855213TA  
5962-8855212TA  
5962-8855211TA  
5962-8855210TA  
5962-8855206TA  
5962-8855205TA  
5962-8855209TA  
5962-8855208TA  
5962-8855207TA  
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2568 / AS5C2568  
Rev. 4.5 06/05  
16  

相关型号:

MT5C2568F-100/XT

Standard SRAM, 32KX8, 100ns, CMOS, CDFP28, CERAMIC, DFP-28
MICROSS

MT5C2568F-12P/883C

Standard SRAM, 32KX8, 12ns, CMOS, CDFP28, CERAMIC, FP-28
MICROSS

MT5C2568F-15/XT

Standard SRAM, 32KX8, 15ns, CMOS, CDFP28, CERAMIC, DFP-28
MICROSS

MT5C2568F-15LE/883C

Standard SRAM, 32KX8, 15ns, CMOS, CDFP28, CERAMIC, FP-28
MICROSS

MT5C2568F-20/883C

32K x 8 SRAM SRAM MEMORY ARRAY
AUSTIN

MT5C2568F-20/IT

Standard SRAM, 32KX8, 20ns, CMOS, CDFP28, CERAMIC, DFP-28
MICROSS

MT5C2568F-20/XT

Standard SRAM, 32KX8, 20ns, CMOS, CDFP28, CERAMIC, DFP-28
MICROSS

MT5C2568F-25/883C

32K x 8 SRAM SRAM MEMORY ARRAY
AUSTIN

MT5C2568F-25/XT

Standard SRAM, 32KX8, 25ns, CMOS, CDFP28, CERAMIC, DFP-28
MICROSS

MT5C2568F-25E/883C

Standard SRAM, 32KX8, 25ns, CMOS, CDFP28, CERAMIC, FP-28
MICROSS

MT5C2568F-35/883C

32K x 8 SRAM SRAM MEMORY ARRAY
AUSTIN

MT5C2568F-35E/883C

Standard SRAM, 32KX8, 35ns, CMOS, CDFP28, CERAMIC, FP-28
MICROSS