AS28C010F-25 [AUSTIN]

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable; 128K ×8 EEPROM EEPROM存储器5伏,可变字节
AS28C010F-25
元器件型号: AS28C010F-25
生产厂家: AUSTIN SEMICONDUCTOR    AUSTIN SEMICONDUCTOR
描述和应用:

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable
128K ×8 EEPROM EEPROM存储器5伏,可变字节

存储 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
PDF文件: 总14页 (文件大小:301K)
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型号参数:AS28C010F-25参数

AS28C010F-25/883C

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

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8 AUSTIN

AS28C010F-25/IT

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

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9 AUSTIN

AS28C010F-25/Q

EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, PACKAGE-32

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0 MICROSS

AS28C010F-25/XT

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

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22 AUSTIN

AS28C010F-25/XT

EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, PACKAGE-32

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0 MICROSS

AS28F128J3APBG-15/XT

Flash, 128MX16, PBGA64, PBGA-64

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0 MICROSS

AS28F128J3ARG-15/ET

Flash, 128MX16, PDSO56, TSOP1-56

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0 MICROSS

AS28F128J3M

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

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22 AUSTIN

AS28F128J3MPBG-15/ET

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

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16 AUSTIN

AS28F128J3MPBG-15/XT

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

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16 AUSTIN

AS28F128J3MRG-15/ET

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

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18 AUSTIN

AS28F128J3MRG-15/XT

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

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9 AUSTIN

AS-29.000-10-3OT-3030-EXT-SMD-H32-TR

Parallel - 3Rd Overtone Quartz Crystal,

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0 RALTRON

AS-29.000-10-3OT-3050-SMD-H32-TR

Parallel - 3Rd Overtone Quartz Crystal, 29MHz Nom, ROHS COMPLIANT, HC-49/US, SMD, 2 PIN

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0 RALTRON

AS-29.000-10-3OT-3050-SMD-H32-TR

Parallel - 3Rd Overtone Quartz Crystal, 29MHz Nom, ROHS COMPLIANT, HC-49/US, SMD, 2 PIN

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0 RALTRON