ALM-1222-TR2G [AVAGO]
1800MHz - 2200MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 6 X 5 MM, 1.1 MM HEIGHT, LEAD FREE, MINIATURE, MCOB-22;型号: | ALM-1222-TR2G |
厂家: | AVAGO TECHNOLOGIES LIMITED |
描述: | 1800MHz - 2200MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 6 X 5 MM, 1.1 MM HEIGHT, LEAD FREE, MINIATURE, MCOB-22 放大器 射频 微波 功率放大器 |
文件: | 总9页 (文件大小:649K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ALM-1222
1.8-2.2GHz Low Noise, High Gain, High Linearity Bal-
anced Amplifier Module
Data Sheet
Description
Features
Avago Technologies’ ALM-1222 is a very low noise, high
linearity balanced amplifier module operating in the 1.8
to 2.2GHz frequency range. The exceptional noise and
linearity performances are achieved through the use of
Avago Technologies’ proprietary 0.5um GaAs Enhance-
ment-mode pHEMT process.
• Low noise figure
• High linearity and P1dB
• GaAs E-pHEMT Technology
• 50Ω internal matching
[1]
3
• Small package size: 5x6x1.1 mm
• 5V supply
The ALM-1222 is housed in a miniature 5.0 x 6.0 x 1.1
3
mm 22-lead multiple-chips-on-board (MCOB) module
package. The compact footprint and low profile makes
this product an ideal choice for Wireless Infrastructure
Basestation Tower-Mounted Amplifiers (TMA), Radio-
cards and Multi-Carrier Driver Amplifiers in the cellular/
PCS/CDMA bands.
• Adjustable current for optimum NF or OIP3
• Excellent uniformity in product specifications
• Tape-and-Reel packaging option available
• MSL-2a and Lead-free
o
Component Image
• Point MTTF > 300 years at 120 C channel tempera-
ture
3
5.0 x 6.0 x 1.1 mm 22-lead MCOB
• Shutdown function
Top View
• Specifications
Note:
• 2GHz; 5V, 280mA (typ) per section
• Vctrl typically at 2.3V
• 31 dB Gain
Package marking provides orienta-
tion and identification
“ALM-1222” = Device Part Number
“YWWDD” = Year, work week and
day of manufacture
AVAGO
ALM-1222
MAYWWDD
XXXX
• 0.62 dB Noise Figure
• 43.7 dBm Output IP3
• 27.5 dBm Output Power at 1dB gain
compression
“XXXX”= Assembly lot number
• 45dB Reverse Isolation
Bottom View
Applications
• Diversity Antenna, TMA & Front End LNA for EGSM/
PCS/W-CDMA Base Stations.
• Driver amplifier.
Notes:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 250 V
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge, Damage and Control.
[2]
o
Absolute Maximum Rating T =25 C
A
[3]
Symbol Parameter
Units
V
Absolute Max.
Thermal Resistance (Vdd = 5.0V,
o
Vctrl=2.2V)qjc = 20 C/W
Vdd
Device Voltage, RF output to ground
Control Voltage
5.5
3.0
22
Notes:
Vctrl
V
2. Operation of this device in ex-
3. cess of any of these limits may
4. cause permanent damage.
Thermal resistance measured
using Infra-Red measurement
technique.
Pin,max CW RF Input Power
(Vdd = 5.0, Idd=280mA)
dBm
[4]
Pdiss
Total Power Dissipation
Junction Temperature
Storage Temperature
W
5
o
T
j
C
150
o
T
STG
C
-65 to 150
Board (module belly) tempera-
o
ture T is 25 C.
B
o
o
Derate 50mW/ C for T >95 C.
B
[5,6]
Product Consistency Distribution Charts
Process Capability for Gain
Process Capability for NF
150
500
400
300
200
100
0
LSL = 29.5, Nominal = 31.0
Nominal = 0.62, USL = 1.0
120
90
60
30
0
Std dev=0.014
CPK>2
Std dev=0.35
CPK=1.45
0.5
0.55
0.6
0.65
NF (dB)
0.7
0.75
28.5 29 29.5 30 30.5 31 31.5 32 32.5 33
Gain (dB)
Figure 1. NF@ 2.0GHz; 5V, 280mA
Figure 2. Gain @ 2.0GHz; 5V, 280mA
Process Capability for OIP3
Process Capability for Vctrl
150
120
90
60
30
0
200
LSL = 39.0, Nominal = 43.7
LSL = 1.9, Nominal = 2.3, USL = 2.8
Std dev = 0.07
CPK_L = 2.0
CPK_U = 2.1
160
120
80
Std dev=0.93
CPK=1.6
40
0
1.8
2
2.2
2.4
2.6
2.8
38
40
42
44
46
48
Vctrl (V)
OIP3 (dBm)
Figure 3. OIP3@ 2.0GHz; 5V, 280mA
Figure 4. Vctrl @ 2.0GHz; 5V, 280mA
Note:
5. Distribution data sample size is 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
6. Measurements are made on a production test board, which can show a variance of up to 1dB in gain and OIP3 compared to a soldered-down
demo board. Input trace losses have been de-embedded from actual measurements.
2
[7], [10]
Electrical Specifications
T = 25 °C, Vdd =5V @ 280mA, RF performance at 2.0 GHz, given for each of the 2 RF paths, measured on demo board
A
(see Fig. 5) unless otherwise specified.
Symbol
Vctrl
Parameter and Test Condition
Control Voltage, Idd=280mA
Gain
Units
Min.
Typ.
2.3
31
Max.
1.9
2.8
Gain
dB
29.5
32.5
[8]
OIP3
Output Third Order Intercept Point
Noise Figure (Typ.Vctrl=2.2V)
Output Power at 1dB Gain Compression
Input Return Loss, 50Ω source
Output Return Loss, 50Ω load
Reverse Isolation
dBm
dB
39
-
43.7
0.62
27.5
-8
-
[9]
NF
1.00
OP1dB
S11
dBm
dB
-
-
-
-
-
-
-
S22
dB
-
-10
45
S12
dB
-
ISO
Isolation between RF Input 1 and RF Input 2
dB
-
22
1-2
Notes:
7. Measurements at 2GHz obtained using demo board described in Fig 5.
8. 2GHz OIP3 test condition: F = 2.0 GHz, F = 2.01 GHz with input power of -20dBm per tone measured at lower side band.
RF1
RF2
9. For NF data, board losses of 0.12dB at the input have been de-embedded.
10. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and applica-
tion note for more details.
3
Demo Board Layout
20-pin Connector
Circuit
Size
Description
Ground
Symbol
C1, C10
C2, C7
0805
0402
2.2uF ceramic
Not used
Pinout Designation
Vsupply 1,2
C3, C6
C4, C9
C5, C8
0402
0402
0402
0.1uF ceramic
Not used
10
1
0.1uF ceramic
RF input 1
RF input 2
RF output 1
RF output 2
Figure 5. Demo Board Layout Diagram
Recommended PCB material is 10 mils Rogers RO4350.
Suggested component values may vary according to
layout and PCB material.
Demo Board Schematic
Module Outline
C3
C5
C1
21
20
Bias
19
1,22
2
17,18
16
50-Ohms TL
50-Ohms TL
Input
Match
Interstage
Match
Output
Match
3,4
5
14,15
13
Input
Match
Interstage
Match
Output
Match
6
12
50-Ohms TL
50-Ohms TL
Bias
9
7
8
10
11
C6
C8
C10
Figure 6. Demo Board Schematic Diagram
4
Balanced Amplifier Demo Board Layout
Circuit
20-pin Connector
Size
Description
Symbol
C1, C10
C2, C7
Ground
0805
0402
0402
0402
0402
0402
0402
2.2uF ceramic
Not used
C3, C6
C4, C9
C5, C8
R1, R4
R2, R3
0.1uF ceramic
Not used
0.1uF ceramic
Not used
49.9 ohms
Anaren Xinger II
XC1900E-03 or equiv
14.22x5.08
Coupler
mm2
RF Input
RF Output
Figure 7. Suggested Balanced Amplifier Demo Board Layout
Recommended PCB material is 10 mils Rogers RO4350.
Suggested component values may vary according to
layout and PCB material.
Balanced Demo Board Schematic
Module Outline
C3
C5
C1
21
20
Bias
19
Coupler
Coupler
1,22
17,18
R2
50-Ohms TL
50-Ohms TL
2
16
RF Input
Input
Match
Interstage
Match
Output
Match
3,4
5
14,15
13
Input
Match
Interstage
Match
Output
Match
RF Output
6
12
50-Ohms TL
50-Ohms TL
Bias
9
R3
7
8
10
11
C6
C8
C10
Figure 8. Application Schematic for Balanced Amplifier
5
ALM-1222 Typical Performance I
o
T = +25 C, V = 5V, I = 280mA Input Signal=CW unless stated otherwise.
A
dd
dd
5
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
35
33
31
29
27
25
23
21
19
17
15
ch1
ch2
ch1
ch2
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
S11 ch1
S11 ch2
0
2
4
6
8
10 12 14 16 18 20
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1.7
1.8
1.9
2.0
Freq (GHz)
2.1
2.2
2.3
Freq (GHz)
Freq (GHz)
Figure 9. NF vs Frequency and channel
Figure 10. Gain vs Frequency and channel
Figure 11. S11 vs Frequency and channel
2.0
0
5
0
-40˚C
25˚C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
S12 ch1
S12 ch2
-10
85˚C
-20
-30
-40
-50
-60
-70
-80
-5
-10
-15
S22 ch1
S22 ch2
-20
-25
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
1.7
1.8
1.9
Freq (GHz)
2
2.1
2.2
2.3
Freq (GHz)
Freq (GHz)
Figure 12. S22 vs Frequency and channel
Figure 13. Isolation vs Frequency and channel
Figure 14. NF vs Frequency and temperature
35
33
31
29
27
25
23
21
19
50
45
40
35
30
25
20
15
35
33
31
29
27
25
23
21
10
-40˚C
25˚C
85˚C
19
17
15
-40˚C
-40˚C
25˚C
85˚C
25˚C
5
17
15
85˚C
0
1.7
1.8
1.9
2
2.1
2.2
2.3
1.7
1.8
1.9
2
2.1
2.2
2.3
1.7
1.8
1.9
2
2.1
2.2
2.3
Freq (GHz)
Freq (GHz)
Freq (GHz)
Figure 15. Gain vs Frequency and temperature
Figure 16. OIP3 vs Frequency and temperature
Figure 17. OP1dB vs Frequency and temperature
6
ALM-1222 Typical Performance II
o
T = +25 C, V = 5V, I = 280mA, Frequency = 2GHz. Input Signal=CW unless stated otherwise.
A
dd
dd
50
45
40
35
30
25
20
15
10
5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
35
33
31
29
27
25
23
21
19
17
15
-40˚C
25˚C
85˚C
-40˚C
25˚C
85˚C
-40˚C
25˚C
85˚C
0
100 150 200 250 300 350 400 450
100 150 200 250 300 350 400 450
Idd (mA)
100 150 200 250 300 350 400 450
Idd (mA)
Idd (mA)
Figure 18. NF vs Idd and temperature
Figure 19. Gain vs Idd and temperature
Figure 20. OIP3 vs Idd and temperature
0
-5
35
33
31
29
27
25
23
21
19
17
15
0
-5
-40˚C
25˚C
85˚C
-10
-10
-15
-15
-40˚C
25˚C
85˚C
-40˚C
25˚C
85˚C
-20
-20
-25
-25
100 150 200 250 300 350 400 450
Idd (mA)
1.8
2
2.2
2.4
Vctrl (V)
2.6
2.8
3
100 150 200 250 300 350 400 450
Idd (mA)
Figure 21. OP1dB vs Vctrl and temperature
Figure 22. S11 vs Idd and temperature
Figure 23. S22 vs Idd and temperature
5
4
3
2
1
0
5
4
3
2
1
0
Freq (GHz)
Figure 24. Stability over frequency
7
Package Dimensions
Device Orientation
REEL
User Feed Direction
AVAGO
ALM-1222
MAYWWDD
XXXX
AVAGO
ALM-1222
MAYWWDD
XXXX
AVAGO
ALM-1222
MAYWWDD
XXXX
CARRIER
TAPE
USER
FEED
DIRECTION
Top View
End View
COVER TAPE
Tape Dimensions
4.00 0.ꢀ0 See Note #2
2.00 0.05
øꢀ.55 0.05
B
A
R0.50
SECTION B-B
B
øꢀ.50 (Min.)
8.00 0.ꢀ0
8
Reel Dimensions
Ø178.0 1.0
FRONT
BACK
SEE DETAIL "X"
RECYCLE LOGO
FRONT VIEW
Part Number Ordering Information
Part Number
No. of Devices Container
ALM-1222-BLKG
ALM-1222-TR1G
ALM-1222-TR2G
100
Antistatic bag
7” Reel
1000
3000
13” Reel
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes AV01-0058EN
AV02-1470EN - April 7, 2009
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