ALM-1222-TR2G [AVAGO]

1800MHz - 2200MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 6 X 5 MM, 1.1 MM HEIGHT, LEAD FREE, MINIATURE, MCOB-22;
ALM-1222-TR2G
型号: ALM-1222-TR2G
厂家: AVAGO TECHNOLOGIES LIMITED    AVAGO TECHNOLOGIES LIMITED
描述:

1800MHz - 2200MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 6 X 5 MM, 1.1 MM HEIGHT, LEAD FREE, MINIATURE, MCOB-22

放大器 射频 微波 功率放大器
文件: 总9页 (文件大小:649K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ALM-1222  
1.8-2.2GHz Low Noise, High Gain, High Linearity Bal-  
anced Amplifier Module  
Data Sheet  
Description  
Features  
Avago Technologies’ ALM-1222 is a very low noise, high  
linearity balanced amplifier module operating in the 1.8  
to 2.2GHz frequency range. The exceptional noise and  
linearity performances are achieved through the use of  
Avago Technologies’ proprietary 0.5um GaAs Enhance-  
ment-mode pHEMT process.  
Low noise figure  
High linearity and P1dB  
GaAs E-pHEMT Technology  
50internal matching  
[1]  
3
Small package size: 5x6x1.1 mm  
5V supply  
The ALM-1222 is housed in a miniature 5.0 x 6.0 x 1.1  
3
mm 22-lead multiple-chips-on-board (MCOB) module  
package. The compact footprint and low profile makes  
this product an ideal choice for Wireless Infrastructure  
Basestation Tower-Mounted Amplifiers (TMA), Radio-  
cards and Multi-Carrier Driver Amplifiers in the cellular/  
PCS/CDMA bands.  
Adjustable current for optimum NF or OIP3  
Excellent uniformity in product specifications  
Tape-and-Reel packaging option available  
MSL-2a and Lead-free  
o
Component Image  
Point MTTF > 300 years at 120 C channel tempera-  
ture  
3
5.0 x 6.0 x 1.1 mm 22-lead MCOB  
Shutdown function  
Top View  
Specifications  
Note:  
2GHz; 5V, 280mA (typ) per section  
Vctrl typically at 2.3V  
31 dB Gain  
Package marking provides orienta-  
tion and identification  
“ALM-1222” = Device Part Number  
“YWWDD” = Year, work week and  
day of manufacture  
AVAGO  
ALM-1222  
MAYWWDD  
XXXX  
0.62 dB Noise Figure  
43.7 dBm Output IP3  
27.5 dBm Output Power at 1dB gain  
compression  
“XXXX= Assembly lot number  
45dB Reverse Isolation  
Bottom View  
Applications  
Diversity Antenna, TMA & Front End LNA for EGSM/  
PCS/W-CDMA Base Stations.  
Driver amplifier.  
Notes:  
1. Enhancement mode technology employs positive gate voltage,  
thereby eliminating the need of negative gate voltage associated  
with conventional depletion mode devices.  
Attention: Observe precautions for  
handling electrostatic sensitive devices.  
ESD Machine Model = 50 V  
ESD Human Body Model = 250 V  
Refer to Avago Technologies Application Note A004R:  
Electrostatic Discharge, Damage and Control.  
[2]  
o
Absolute Maximum Rating T =25 C  
A
[3]  
Symbol Parameter  
Units  
V
Absolute Max.  
Thermal Resistance (Vdd = 5.0V,  
o
Vctrl=2.2V)qjc = 20 C/W  
Vdd  
Device Voltage, RF output to ground  
Control Voltage  
5.5  
3.0  
22  
Notes:  
Vctrl  
V
2. Operation of this device in ex-  
3. cess of any of these limits may  
4. cause permanent damage.  
Thermal resistance measured  
using Infra-Red measurement  
technique.  
Pin,max CW RF Input Power  
(Vdd = 5.0, Idd=280mA)  
dBm  
[4]  
Pdiss  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
W
5
o
T
j
C
150  
o
T
STG  
C
-65 to 150  
Board (module belly) tempera-  
o
ture T is 25 C.  
B
o
o
Derate 50mW/ C for T >95 C.  
B
[5,6]  
Product Consistency Distribution Charts  
Process Capability for Gain  
Process Capability for NF  
150  
500  
400  
300  
200  
100  
0
LSL = 29.5, Nominal = 31.0  
Nominal = 0.62, USL = 1.0  
120  
90  
60  
30  
0
Std dev=0.014  
CPK>2  
Std dev=0.35  
CPK=1.45  
0.5  
0.55  
0.6  
0.65  
NF (dB)  
0.7  
0.75  
28.5 29 29.5 30 30.5 31 31.5 32 32.5 33  
Gain (dB)  
Figure 1. NF@ 2.0GHz; 5V, 280mA  
Figure 2. Gain @ 2.0GHz; 5V, 280mA  
Process Capability for OIP3  
Process Capability for Vctrl  
150  
120  
90  
60  
30  
0
200  
LSL = 39.0, Nominal = 43.7  
LSL = 1.9, Nominal = 2.3, USL = 2.8  
Std dev = 0.07  
CPK_L = 2.0  
CPK_U = 2.1  
160  
120  
80  
Std dev=0.93  
CPK=1.6  
40  
0
1.8  
2
2.2  
2.4  
2.6  
2.8  
38  
40  
42  
44  
46  
48  
Vctrl (V)  
OIP3 (dBm)  
Figure 3. OIP3@ 2.0GHz; 5V, 280mA  
Figure 4. Vctrl @ 2.0GHz; 5V, 280mA  
Note:  
5. Distribution data sample size is 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have  
nominal values anywhere between the upper and lower limits.  
6. Measurements are made on a production test board, which can show a variance of up to 1dB in gain and OIP3 compared to a soldered-down  
demo board. Input trace losses have been de-embedded from actual measurements.  
2
[7], [10]  
Electrical Specifications  
T = 25 °C, Vdd =5V @ 280mA, RF performance at 2.0 GHz, given for each of the 2 RF paths, measured on demo board  
A
(see Fig. 5) unless otherwise specified.  
Symbol  
Vctrl  
Parameter and Test Condition  
Control Voltage, Idd=280mA  
Gain  
Units  
Min.  
Typ.  
2.3  
31  
Max.  
1.9  
2.8  
Gain  
dB  
29.5  
32.5  
[8]  
OIP3  
Output Third Order Intercept Point  
Noise Figure (Typ.Vctrl=2.2V)  
Output Power at 1dB Gain Compression  
Input Return Loss, 50source  
Output Return Loss, 50load  
Reverse Isolation  
dBm  
dB  
39  
-
43.7  
0.62  
27.5  
-8  
-
[9]  
NF  
1.00  
OP1dB  
S11  
dBm  
dB  
-
-
-
-
-
-
-
S22  
dB  
-
-10  
45  
S12  
dB  
-
ISO  
Isolation between RF Input 1 and RF Input 2  
dB  
-
22  
1-2  
Notes:  
7. Measurements at 2GHz obtained using demo board described in Fig 5.  
8. 2GHz OIP3 test condition: F = 2.0 GHz, F = 2.01 GHz with input power of -20dBm per tone measured at lower side band.  
RF1  
RF2  
9. For NF data, board losses of 0.12dB at the input have been de-embedded.  
10. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and applica-  
tion note for more details.  
3
Demo Board Layout  
20-pin Connector  
Circuit  
Size  
Description  
Ground  
Symbol  
C1, C10  
C2, C7  
0805  
0402  
2.2uF ceramic  
Not used  
Pinout Designation  
Vsupply 1,2  
C3, C6  
C4, C9  
C5, C8  
0402  
0402  
0402  
0.1uF ceramic  
Not used  
10  
1
0.1uF ceramic  
RF input 1  
RF input 2  
RF output 1  
RF output 2  
Figure 5. Demo Board Layout Diagram  
Recommended PCB material is 10 mils Rogers RO4350.  
Suggested component values may vary according to  
layout and PCB material.  
Demo Board Schematic  
Module Outline  
C3  
C5  
C1  
21  
20  
Bias  
19  
1,22  
2
17,18  
16  
50-Ohms TL  
50-Ohms TL  
Input  
Match  
Interstage  
Match  
Output  
Match  
3,4  
5
14,15  
13  
Input  
Match  
Interstage  
Match  
Output  
Match  
6
12  
50-Ohms TL  
50-Ohms TL  
Bias  
9
7
8
10  
11  
C6  
C8  
C10  
Figure 6. Demo Board Schematic Diagram  
4
Balanced Amplifier Demo Board Layout  
Circuit  
20-pin Connector  
Size  
Description  
Symbol  
C1, C10  
C2, C7  
Ground  
0805  
0402  
0402  
0402  
0402  
0402  
0402  
2.2uF ceramic  
Not used  
C3, C6  
C4, C9  
C5, C8  
R1, R4  
R2, R3  
0.1uF ceramic  
Not used  
0.1uF ceramic  
Not used  
49.9 ohms  
Anaren Xinger II  
XC1900E-03 or equiv  
14.22x5.08  
Coupler  
mm2  
RF Input  
RF Output  
Figure 7. Suggested Balanced Amplifier Demo Board Layout  
Recommended PCB material is 10 mils Rogers RO4350.  
Suggested component values may vary according to  
layout and PCB material.  
Balanced Demo Board Schematic  
Module Outline  
C3  
C5  
C1  
21  
20  
Bias  
19  
Coupler  
Coupler  
1,22  
17,18  
R2  
50-Ohms TL  
50-Ohms TL  
2
16  
RF Input  
Input  
Match  
Interstage  
Match  
Output  
Match  
3,4  
5
14,15  
13  
Input  
Match  
Interstage  
Match  
Output  
Match  
RF Output  
6
12  
50-Ohms TL  
50-Ohms TL  
Bias  
9
R3  
7
8
10  
11  
C6  
C8  
C10  
Figure 8. Application Schematic for Balanced Amplifier  
5
ALM-1222 Typical Performance I  
o
T = +25 C, V = 5V, I = 280mA Input Signal=CW unless stated otherwise.  
A
dd  
dd  
5
0
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
35  
33  
31  
29  
27  
25  
23  
21  
19  
17  
15  
ch1  
ch2  
ch1  
ch2  
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
S11 ch1  
S11 ch2  
0
2
4
6
8
10 12 14 16 18 20  
1.7  
1.8  
1.9  
2.0  
2.1  
2.2  
2.3  
1.7  
1.8  
1.9  
2.0  
Freq (GHz)  
2.1  
2.2  
2.3  
Freq (GHz)  
Freq (GHz)  
Figure 9. NF vs Frequency and channel  
Figure 10. Gain vs Frequency and channel  
Figure 11. S11 vs Frequency and channel  
2.0  
0
5
0
-40˚C  
25˚C  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
S12 ch1  
S12 ch2  
-10  
85˚C  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-5  
-10  
-15  
S22 ch1  
S22 ch2  
-20  
-25  
0
2
4
6
8
10 12 14 16 18 20  
0
2
4
6
8
10 12 14 16 18 20  
1.7  
1.8  
1.9  
Freq (GHz)  
2
2.1  
2.2  
2.3  
Freq (GHz)  
Freq (GHz)  
Figure 12. S22 vs Frequency and channel  
Figure 13. Isolation vs Frequency and channel  
Figure 14. NF vs Frequency and temperature  
35  
33  
31  
29  
27  
25  
23  
21  
19  
50  
45  
40  
35  
30  
25  
20  
15  
35  
33  
31  
29  
27  
25  
23  
21  
10  
-40˚C  
25˚C  
85˚C  
19  
17  
15  
-40˚C  
-40˚C  
25˚C  
85˚C  
25˚C  
5
17  
15  
85˚C  
0
1.7  
1.8  
1.9  
2
2.1  
2.2  
2.3  
1.7  
1.8  
1.9  
2
2.1  
2.2  
2.3  
1.7  
1.8  
1.9  
2
2.1  
2.2  
2.3  
Freq (GHz)  
Freq (GHz)  
Freq (GHz)  
Figure 15. Gain vs Frequency and temperature  
Figure 16. OIP3 vs Frequency and temperature  
Figure 17. OP1dB vs Frequency and temperature  
6
ALM-1222 Typical Performance II  
o
T = +25 C, V = 5V, I = 280mA, Frequency = 2GHz. Input Signal=CW unless stated otherwise.  
A
dd  
dd  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
35  
33  
31  
29  
27  
25  
23  
21  
19  
17  
15  
-40˚C  
25˚C  
85˚C  
-40˚C  
25˚C  
85˚C  
-40˚C  
25˚C  
85˚C  
0
100 150 200 250 300 350 400 450  
100 150 200 250 300 350 400 450  
Idd (mA)  
100 150 200 250 300 350 400 450  
Idd (mA)  
Idd (mA)  
Figure 18. NF vs Idd and temperature  
Figure 19. Gain vs Idd and temperature  
Figure 20. OIP3 vs Idd and temperature  
0
-5  
35  
33  
31  
29  
27  
25  
23  
21  
19  
17  
15  
0
-5  
-40˚C  
25˚C  
85˚C  
-10  
-10  
-15  
-15  
-40˚C  
25˚C  
85˚C  
-40˚C  
25˚C  
85˚C  
-20  
-20  
-25  
-25  
100 150 200 250 300 350 400 450  
Idd (mA)  
1.8  
2
2.2  
2.4  
Vctrl (V)  
2.6  
2.8  
3
100 150 200 250 300 350 400 450  
Idd (mA)  
Figure 21. OP1dB vs Vctrl and temperature  
Figure 22. S11 vs Idd and temperature  
Figure 23. S22 vs Idd and temperature  
5
4
3
2
1
0
5
4
3
2
1
0
Freq (GHz)  
Figure 24. Stability over frequency  
7
Package Dimensions  
Device Orientation  
REEL  
User Feed Direction  
AVAGO  
ALM-1222  
MAYWWDD  
XXXX  
AVAGO  
ALM-1222  
MAYWWDD  
XXXX  
AVAGO  
ALM-1222  
MAYWWDD  
XXXX  
CARRIER  
TAPE  
USER  
FEED  
DIRECTION  
Top View  
End View  
COVER TAPE  
Tape Dimensions  
4.00 0.ꢀ0 See Note #2  
2.00 0.05  
øꢀ.55 0.05  
B
A
R0.50  
SECTION B-B  
B
øꢀ.50 (Min.)  
8.00 0.ꢀ0  
8
Reel Dimensions  
Ø178.0 1.0  
FRONT  
BACK  
SEE DETAIL "X"  
RECYCLE LOGO  
FRONT VIEW  
Part Number Ordering Information  
Part Number  
No. of Devices Container  
ALM-1222-BLKG  
ALM-1222-TR1G  
ALM-1222-TR2G  
100  
Antistatic bag  
7” Reel  
1000  
3000  
13” Reel  
For product information and a complete list of distributors, please go to our web site:  
www.avagotech.com  
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.  
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes AV01-0058EN  
AV02-1470EN - April 7, 2009  

相关型号:

ALM-12224

50 Watt High Power SPDT Switch with LNA Module
AVAGO

ALM-12224-BLKG

50 Watt High Power SPDT Switch with LNA Module
AVAGO

ALM-12224-TR1G

50 Watt High Power SPDT Switch with LNA Module
AVAGO

ALM-13-

Limit Alarms (rotary switch adj.) AL-UNIT
MSYSTEM

ALM-13-/Q

Limit Alarms (rotary switch adj.) AL-UNIT
MSYSTEM

ALM-13-B

Limit Alarms (rotary switch adj.) AL-UNIT
MSYSTEM

ALM-13-B/Q

Limit Alarms (rotary switch adj.) AL-UNIT
MSYSTEM

ALM-13-C

Limit Alarms (rotary switch adj.) AL-UNIT
MSYSTEM

ALM-13-C/Q

Limit Alarms (rotary switch adj.) AL-UNIT
MSYSTEM

ALM-13-D

Limit Alarms (rotary switch adj.) AL-UNIT
MSYSTEM

ALM-13-D/Q

Limit Alarms (rotary switch adj.) AL-UNIT
MSYSTEM

ALM-13-F

Limit Alarms (rotary switch adj.) AL-UNIT
MSYSTEM