HBAT-540B-TR2 [AVAGO]
UNIDIRECTIONAL, SILICON, TVS DIODE, SC-70, 3 PIN;
| 型号： | HBAT-540B-TR2 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | UNIDIRECTIONAL, SILICON, TVS DIODE, SC-70, 3 PIN 光电二极管 电视 |
| 文件： | 总9页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HBAT-5400, 5402, 540B, 540C
High Performance Schottky Diode
for Transient Suppression
Data Sheet
Description
Features
The HBAT-540x series of Schottky diodes, commonly
referred to as clipping/clamping diodes, are optimal
for circuit and waveshape preservation applications
with high speed switching. Low series resistance, RS,
makes them ideal for protecting sensitive circuit ele-
ments against high current transients carried on data
lines. With picosecond switching, the HBAT-540x can
respond to noise spikes with rise times as fast as 1 ns.
Lowcapacitanceminimizeswaveshapelossthatcauses
signal degradation.
•
•
•
•
Ultra-low Series Resistance for Higher Current Handling
Low Capacitance
Low Series Resistance
Lead-free Option Available
Applications
RF and computer designs that require circuit protec-
tion, high-speed switching, and voltage clamping.
Package Lead Code Identification
(Top View)
SINGLE
3
SERIES
3
0, B
2, C
1
2
1
2
2
Absolute Maximum Ratings, TA= 25ºC
Absolute Maximum[1]
Symbol
Parameter
Unit
HBAT-5400/-5402
HBAT-540B/-540C
IF
IF- peak
PT
DC Forward Current
mA
A
220
1.0
430
1.0
Peak Surge Current (1µs pulse)
Total Power Dissipation
Peak Inverse Voltage
mW
V
250
825
PINV
TJ
30
30
Junction Temperature
°C
150
150
TSTG
θJC
Storage Temperature
°C
°C/W
-65 to 150
500
-65 to 150
150
Thermal Resistance, junction to lead
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
Linear and Non-linear SPICE Model[2]
SPICE Parameters
0.08 pF
Parameter
Unit
V
Value
40
BV
CJO
EG
IBV
IS
pF
eV
A
3.0
0.55
10E-4
1.0E-7
1.0
2 nH
R
S
A
SPICE model
N
RS
PB
PT
M
Ω
V
2.4
Note:
0.6
2. To effectively model the packaged HBAT-540x
product, please refer to Application Note AN1124.
2
0.5
HBAT-540x DC Electrical Specifications, TA = +25°C[1]
Maximum
Minimum
Breakdown
Voltage
Typical
Series
Capacitance Resistance
Maximum
Eff. Carrier
Lifetime
t (ps)
Part
Package
Forward
Voltage
VF (mV)
Typical
Number Marking Lead
HBAT-
Code[2] Code
Configuration
Package
VBR (V)
CT (pF)
RS (Ω)
-5400
0
SOT-23
V0
Single
SOT-323
(3-lead SC-70)
800[3]
30[4]
3.0[5]
2.4
100[6]
-540B
-5402
B
2
SOT-23
V2
Series
SOT-323
(3-lead SC-70)
-540C
C
Notes:
1. TA = +25°C, where TA is defined to be the temperature at the package pins where contact is made to the circuit board.
2. Package marking code is laser marked.
3. IF = 100 mA; 100% tested
4. IF = 100 µA; 100% tested
5. VF = 0; f =1 MHz
6. Measured with Karkauer method at 20 mA guaranteed by design.
3
Typical Performance
300
100
160
140
120
100
80
500
100
Max. safe junction temp.
10
1
10
1
60
40
0.1
0.1
TA = +75C
TA = +75C
TA = +75C
A = +25C
TA = –25C
T
T
A = +25C
A = –25C
T
T
A = +25C
A = –25C
T
20
0
0.01
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0
50
I – FORWARD CURRENT (mA)
F
100
150
200
250
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
– FORWARD VOLTAGE (V)
I
– FORWARD CURRENT (mA)
F
F
Figure 1. Forward Current vs.
Forward Voltage at Temperature for
HBAT-5400 and HBAT-5402.
Figure 2. Forward Current vs.
Forward Voltage at Temperature for
HBAT-540B and HBAT-540C.
Figure 3. Junction Temperature vs.
Current as a Function of Heat Sink
Temperature for HBAT-5400 and
HBAT-5402. Note: Data is calculated
from SPICE parameters.
160
3.0
2.5
2.0
Max. safe junction temp.
140
120
100
80
60
1.5
1.0
40
TA = +75C
T
T
A = +25C
A = –25C
20
0
0
100 200 300 400 500 600
– FORWARD CURRENT (mA)
0
5
10
V – REVERSE VOLTAGE (V)
R
15
20
I
F
Figure 4. Junction Temperature vs.
Current as a Function of Heat Sink
Temperature for HBAT-540B and
HBAT-540C.
Figure 5. Total Capacitance vs.
Reverse Voltage.
Note: Data is calculated from SPICE
parameters.
Device Orientation
For Outlines SOT-23/323
TOP VIEW
4 mm
END VIEW
REEL
8 mm
CARRIER
TAPE
ABC
ABC
ABC
ABC
USER
FEED
DIRECTION
Note: "AB" represents package marking code.
"C" represents date code.
COVER TAPE
4
Package Dimensions
Outline SOT-23
Recommended PCB Pad Layout for
Avago’s SOT-23 Products
e2
0.039
e1
1
0.039
1
E1
E
XXX
0.079
2.0
e
L
B
D
C
0.035
0.9
DIMENSIONS (mm)
SYMBOL
MIN.
0.79
0.000
0.37
0.086
2.73
1.15
0.89
1.78
0.45
2.10
0.45
MAX.
1.20
0.100
0.54
0.152
3.13
1.50
1.02
2.04
0.60
2.70
0.69
A
A1
B
0.031
0.8
A
C
inches
Dimensions in
mm
D
A1
E1
e
e1
e2
E
Notes:
XXX-package marking
Drawings are not to scale
L
Tape Dimensions and Product Orientation
For Outline SOT-23
P
P
D
2
E
F
P
0
W
D
1
t1
Ko
13.5° MAX
8° MAX
9° MAX
B
A
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
3.15 0.10
2.77 0.10
1.22 0.10
4.00 0.10
1.00 + 0.05
0.124 0.004
0.109 0.004
0.048 0.004
0.157 0.004
0.039 0.002
0
0
0
BOTTOM HOLE DIAMETER
D
1
PERFORATION
CARRIER TAPE
DIAMETER
PITCH
POSITION
D
1.50 + 0.10
4.00 0.10
1.75 0.10
0.059 + 0.004
0.157 0.004
0.069 0.004
P
E
0
WIDTH
W
8.00+0.30–0.10 0.315+0.012–0.004
THICKNESS
t1
0.229 0.013
0.009 0.0005
DISTANCE
BETWEEN
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CENTERLINE
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2.00 0.05
0.079 0.002
2
5
Package Dimensions
Recommended PCB Pad Layout for
Avago’s SC70 3L/SOT-323 Products
Outline SOT-323 (SC-70 3 Lead)
e1
0.026
E1
E
XXX
e
L
0.079
B
C
0.039
D
DIMENSIONS (mm)
SYMBOL
MIN.
0.80
0.00
0.15
0.10
1.80
1.10
MAX.
1.00
0.10
0.40
0.20
2.25
1.40
A
A1
B
0.022
A
C
Dimensions in inches
D
A1
E1
e
0.65 typical
1.30 typical
1.80 2.40
0.425 typical
e1
E
Notes:
XXX-package marking
L
Drawings are not to scale
Tape Dimensions and Product Orientation
For Outline SOT-323 (SC-70 3 Lead)
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
8° MAX.
8° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
2.40 0.10
2.40 0.10
1.20 0.10
4.00 0.10
1.00 + 0.25
0.094 0.004
0.094 0.004
0.047 0.004
0.157 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
D
1
PERFORATION
DIAMETER
PITCH
POSITION
D
1.55 0.05
4.00 0.10
1.75 0.10
0.061 0.002
0.157 0.004
0.069 0.004
P
E
0
CARRIER TAPE
COVER TAPE
DISTANCE
WIDTH
THICKNESS
W
8.00 0.30
0.254 0.02
0.315 0.012
0.0100 0.0008
t
1
WIDTH
TAPE THICKNESS
C
5.4 0.10
0.062 0.001
0.205 0.004
0.0025 0.00004
T
t
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2.00 0.05
0.079 0.002
2
6
Applications Information
Schottky Diode Fundamentals
P
N
METAL N
The HBAT-540x series of clipping/clamping diodes are
Schottky devices. A Schottky device is a rectifying,
metal-semiconductor contact formed between a metal
and an n-doped or a p-doped semiconductor. When a
metal-semiconductor junction is formed, free elec-
trons flow across the junction from the semiconductor
and fill the free-energy states in the metal. This flow of
electrons creates a depletion or potential across the
junction. Thedifferenceinenergylevelsbetweensemi-
conductor and metal is called a Schottky barrier.
CAPACITANCE
CURRENT
CURRENT
0.3V
CAPACITANCE
0.6V
–
+
–
+
BIAS VOLTAGE
BIAS VOLTAGE
PN JUNCTION
SCHOTTKY JUNCTION
Figure 6.
Through the careful manipulation of the diameter of
the Schottky contact and the choice of metal deposited
on the n-doped silicon, the important characteristics of
P-doped, Schottky-barrier diodes excel at applications
requiring ultra low turn-on voltage (such as zero-biased
RF detectors). But their very low, breakdown-voltage
and high series-resistance make them unsuitable for
the clipping and clamping applications involving high
forward currents and high reverse voltages. Therefore,
this discussion will focus entirely on n-doped Schottky
diodes.
the diode (junction capacitance, C ; parasitic series
J
resistance, R ; breakdown voltage, V ; and forward
BR
S
voltage, VF,)canbeoptimizedforspecificapplications.
The HSMS-270x series and HBAT-540x series of diodes
are a case in point.
Both diodes have similar barrier heights; and this is
indicated by corresponding values of saturation
current, IS. Yet, different contact diameters and
epitaxial-layer thickness result in very different values
of junction capacitance, CJ and RS. This is portrayed by
their SPICE parameters in Table 1.
Under a forward bias (metal connected to positive in an
n-doped Schottky), or forward voltage, VF, there are
many electrons with enough thermal energy to cross
the barrier potential into the metal. Once the applied
bias exceeds the built-in potential of the junction, the
forwardcurrent,IF,willincreaserapidlyasVF increases.
Table 1. HBAT-540x and HSMS-270x SPICE Parameters.
When the Schottky diode is reverse biased, the poten-
tial barrier for electrons becomes large; hence, there is
a small probability that an electron will have sufficient
thermal energy to cross the junction. The reverse leak-
age current will be in the nanoampere to microampere
range, depending upon the diode type, the reverse
voltage, and the temperature.
Parameter
HBAT-540x
40 V
HSMS-270x
25 V
BV
CJ0
EG
IBV
IS
3.0 pF
0.55 eV
10E-4 A
1.0E-7 A
1.0
6.7 pF
0.55 eV
10E-4 A
1.4E-7 A
1.04
N
In contrast to a conventional p-n junction, current in
the Schottky diode is carried only by majority carriers.
Because no minority carrier charge storage effects are
present, Schottky diodes have carrier lifetimes of less
than 100 ps and are extremely fast switching semicon-
ductors. Schottky diodes are used as rectifiers at
frequencies of 50 GHz and higher.
RS
PB
PT
M
2.4 Ω
0.6 V
0.65 Ω
0.6 V
2
2
0.5
0.5
At low values of IF ≤ 1 mA, the forward voltages of the
two diodes are nearly identical. However, as current
rises above 10 mA, the lower series resistance of the
HSMS-270x allows for a much lower forward voltage.
This gives the HSMS-270x a much higher current
handling capability. The trade-off is a higher value of
Another significant difference between Schottky and
p-ndiodesistheforwardvoltagedrop. Schottkydiodes
haveathresholdoftypically0.3 Vincomparisontothat
of 0.6 V in p-n junction diodes. See Figure 6.
7
junction capacitance. The forward voltage and current importance of current handling capacity is shown in
plots illustrate the differences in these two Schottky Figure 9, where the forward voltage generated by a
diodes, as shown in Figure 7.
forward current is compared in two diodes. The first is
a conventional Schottky diode of the type generally
used in RF circuits, with an RS of 7.7Ω. The second is a
Schottky diode of identical characteristics, save the RS
of 1.0 Ω. For the conventional diode, the relatively high
value of RS causes the voltage across the diode’s
terminals to rise as current increases. The power dissi-
pated in the diode heats the junction, causing RS to
climb, giving rise to a runaway thermal condition. In
the second diode with low RS , such heating does not
take place and the voltage across the diode terminals is
maintained at a low limit even at high values of current.
300
HSMS-270x
100
10
1
HBAT-540x
.1
.01
0
0.1
0.2
0.3
0.4
0.5
0.6
Maximum reliability is obtained in a Schottky diode
when the steady state junction temperature is main-
tained at or below 150°C, although brief excursions to
higher junction temperatures can be tolerated with no
significant impact upon mean-time-to-failure, MTTF.
In order to compute the junction temperature, Equa-
tions (1) and (3) below must be simultaneously solved.
V
– FORWARD VOLTAGE (V)
F
Figure 7. Forward Current vs. Forward Voltage at
25°C.
Becausetheautomatic,pick-and-placeequipmentused
to assemble these products selects dice from adjacent
sites on the wafer, the two diodes which go into the
HBAT-5402 or HBAT-540C (series pair) are closely
matched—without the added expense of testing and
binning.
11600 (V – I R )
F
F
S
nT
(1)
J
I = I
e
–1
F
S
Current Handling in Clipping/Clamping Circuits
The purpose of a clipping/clamping diode is to handle
high currents, protecting delicate circuits downstream
of the diode. Current handling capacity is determined
by two sets of characteristics, those of the chip or
device itself and those of the package into which it is
mounted.
2
1
T
J
1
298
–
–4060
n
T
(2)
(3)
J
I = I
e
S
0
298
T = V I + T
θ
J
F F JC A
where:
IF = forward current
IS = saturation current
VF = forward voltage
RS = series resistance
noisy data-spikes
current
Vs
limiting
TJ = junction temperature
IO = saturation current at 25°C
n = diode ideality factor
long cross-site cable
pull-down
0V
(or pull-up)
θ
JC = thermal resistance from junction to case (diode
lead)
= θ
voltage limited to
Vs + Vd
0V – Vd
+ θ
package
chip
TA = ambient (diode lead) temperature
Figure 8. Two Schottky Diodes Are Used for Clip-
ping/Clamping in a Circuit.
Equation (1) describes the forward V-I curve of a
Schottky diode. Equation (2) provides the value for the
diode’s saturation current, which value is plugged into
(1). Equation (3) gives the value of junction tempera-
ture as a function of power dissipated in the diode and
ambient (lead) temperature.
Consider the circuit shown in Figure 8, in which two
Schottkydiodesareusedtoprotectacircuitfromnoise
spikes on a stream of digital data. The ability of the
diodes to limit the voltage spikes is related to their
ability to sink the associated current spikes. The
8
and the thermal resistance of the copper-leadframe,
SOT-323 package is typically 110°C/W. The impact of
package thermal resistance on the current handling
capability of these diodes can be seen in Figures 3 and
4. Here the computed values of junction temperature
vs. forward current are shown for three values of
ambienttemperature.TheSOT-323products,withtheir
copper leadframes, can safely handle almost twice the
current of the larger SOT-23 diodes. Note that the term
“ambient temperature” refers to the temperature of the
diode’s leads, not the air around the circuit board. It
can be seen that the HBAT-540B and HBAT-540C prod-
ucts in the SOT-323 package will safely withstand a
steady-stateforwardcurrentof330mAwhenthediode’s
terminals are maintained at 75°C.
6
5
4
3
2
R
= 7.7 Ω
s
R
= 1.0 Ω
s
1
0
0
0.1
0.2
0.3
0.4
0.5
I
– FORWARD CURRENT (mA)
F
Figure 9. Comparison of Two Diodes.
The key factors in these equations are: RS, the series
resistance of the diode where heat is generated under
Forpulsedcurrentsandtransientcurrentspikesofless
than one microsecond in duration, the junction does
not have time to reach thermal steady state. Moreover,
thediodejunctionmaybetakentotemperatureshigher
than 150°C for short timeperiods without impacting
device MTTF. Because of these factors, higher cur-
rents can be safely handled. The HBAT-540x family has
the second highest current handling capability of any
Avago diode, next to the HSMS-270x series.
high current conditions; θ
, the chip thermal resis-
chip
tance of the Schottky die; and θ
, or the package
package
thermal resistance.
RS for the HBAT-540x family of diodes is typically 2.4Ω,
other than the HSMS-270x family, this is the lowest of
any Schottky diode available. Chip thermal resistance
is typically 40°C/W; the thermal resistance of the iron-
alloy-leadframe, SOT-23 package is typically 460°C/W;
Part Number Ordering Information
Part Number
No. of Devices
Container
HBAT-5400-BLK
HBAT-5400-TR1
HBAT-5400-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
13" Reel
HBAT-5402-BLK
HBAT-5402-TR1
HBAT-5402-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
13" Reel
HBAT-540B-BLK
HBAT-540B-TR1
HBAT-540B-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
13" Reel
HBAT-540C-BLK
HBAT-540C-TR1
HBAT-540C-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
13" Reel
Note: For lead-free option, the part number will have the character "G"
at the end, eg. HBAT-540x-TR2G for a 10,000 lead-free reel.
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte.
in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
Obsoletes 5989-2490EN
5989-4779EN March 15, 2006
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