HSSR-7111-200 [AVAGO]
TRANSISTOR OUTPUT SOLID STATE RELAY, 1500V ISOLATION-MAX, HERMETIC SEALED, CERAMIC, DIP-8;
| 型号： | HSSR-7111-200 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | TRANSISTOR OUTPUT SOLID STATE RELAY, 1500V ISOLATION-MAX, HERMETIC SEALED, CERAMIC, DIP-8 分离技术 隔离技术 输出元件 |
| 文件： | 总11页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HSSR-7110, HSSR-7111 & HSSR-7112, HSSR-711E
5962-9314001, 5962-9314002 90 V/1.0 Ω, Hermetically Sealed,
Power MOSFET Optocoupler
Data Sheet
Description
Features
The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E and
SMD 5962-93140 are single channel power MOSFET
optocouplers, constructed in eight-pin, hermetic, dual-in-
line, ceramic packages. The devices operate exactly like a
solid-state relay.
•
Dual Marked with Device Part Number and DSCC
Standard Microcircuit Drawing
•
•
•
ac/dc Signal & Power Switching
Compact Solid-State Bidirectional Switch
Manufactured and Tested on a MIL-PRF-38534 Certi-
fied Line
Theproductsarecapableofoperationandstorageoverthe
full military temperature range and may be purchased as
a standard product (HSSR-7110), with full MIL-PRF-38534
ClassHtesting(HSSR-7111andHSSR-7112),withMIL-PRF-
38534ClassEtesting(ClassKwithexceptions)(HSSR-711E)
or from the DSCC Standard Microcircuit Drawing (SMD)
5962-93140. Details of the Class E program may be found
on page 11 of this datasheet.
•
•
•
QML-38534
MIL-PRF-38534 Class H
Modified Space Level Processing Available
(Class E)
•
•
•
Hermetically Sealed 8-Pin Dual In-Line Package
Small Size and Weight
Applications
Performance Guaranteed over
-55°C to +125°C
•
•
•
•
•
•
Military and Space
High Reliability Systems
Standard 28 Vdc and 48 Vdc Load Driver
Standard 24 Vac Load Driver
Aircraft Controls
•
•
•
•
•
Connection A 0.8 A, 1.0 Ω
Connection B 1.6 A, 0.25 Ω
1500 Vdc Withstand Test Voltage
High Transient Immunity
ac/dc Electromechanical and Solid State Relay
Replacement
5 Amp Output Surge Current
•
•
I/O Modules
Harsh Industrial Environments
Functional Diagrams
CONNECTION A
AC/DC CONNECTION
CONNECTION B
DC CONNECTION
I
I
O
O
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
NC
NC
+
O
-
+
V
I
I
F
TRUTH TABLE
F
INPUT
OUTPUT
CLOSED
OPEN
+
-
+
-
V
V
F
V
H
L
F
O
-
NC
NC
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to pre-
vent damage and/or degradation which may be induced by ESD.
All devices are manufactured and tested on a MIL-PRF-
38534certifiedlineandareincludedintheDSCCQualified
Manufacturers List, QML-38534 for Hybrid Microcircuits.
Each device contains an AlGaAs light emitting diode opti-
cally coupled to a photovoltaic diode stack which drives
two discrete power MOSFETs. The device operates as a
solid-state replacement for single-pole, normally open,
(1 Form A) relays used for general purpose switching of
signals and loads in high reliability applications.
The devices are convenient replacements for mechanical
and solid state relays where high component reliability
with standard footprint lead configuration is desirable.
Devices may be purchased with a variety of lead bend
and plating options. See Selection Guide table for details.
Standard Microcircuit Drawing (SMD) parts are available
for each package and lead style.
The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E and
SMD 5962-93140 are designed to switch loads on 28 Vdc
power systems. They meet 80 V surge and 600 V spike
requirements.
The devices feature logic level input control and very low
output on-resistance, making them suitable for both ac
and dc loads. Connection A, as shown in the Functional
Diagram, allows the device to switch either ac or dc loads.
Connection B, with the polarity and pin configuration
as shown, allows the device to switch dc loads only. The
advantage of Connection B is that the on-resistance is
significantly reduced, and the output current capability
increases by a factor of two.
Selection Guide–Package Styles and Lead Configuration Options
Avago Technologies’ Part Number and Options
Commercial
HSSR-7110
HSSR-7111
MIL-PRF-38534 Class H
MIL-PRF-38534 Class E
Standard Lead Finish
Solder Dipped*
HSSR-7112
HSSR-711E
Gold Plate
Option -200
Gold Plate
Option #200
Option #100
Option #300
Option #600
Gold Plate
Option -200
Option -100
Option -300
Butt Joint/Gold Plate
Gull Wing/Soldered*
Crew Cut/Gold Plate
SMD Part #
Prescript for all below
Either Gold or Soldered
Gold Plate
5962-
5962-
9314001HPX
9314001HPC
9314001HPA
9314001HYC
9314001HYA
9314001HXA
9314002HPX
9314002HPC
9314002HPA
9314002HYC
9314002HYA
9314002HXA
9314001EPX
9314001EPC
9314001EPA
Solder Dipped*
Butt Joint/Gold Plate
Butt Joint/Soldered*
Gull Wing/Soldered*
Crew Cut/Gold Plate
9314001HZC
9314001HZA
Crew Cut/Soldered*
* Solder Contains Lead
CAUTION: Maximum Switching Frequency – Care should be taken during repetitive switching of loads so as not to
exceed the maximum output current, maximum output power dissipation, maximum case temperature, and maxi-
mum junction temperature.
ꢀ
Outline Drawing
Device Marking
Agilent
DESIGNATOR
8-pin DIP Through Hole
A QYYWWZ
XXXXXX
XXXXXXX
XXX XXX
50434
COMPLIANCE INDICATOR,*
DATE CODE, SUFFIX
(IF NEEDED)
COUNTRY OF MFR.
Agilent CAGE CODE*
9.40 (0.370)
9.91 (0.390)
0.76 (0.030)
1.27 (0.050)
8.13 (0.320)
MAX.
Agilent P/N
DSCC SMD*
DSCC SMD*
PIN ONE/
7.16 (0.282)
7.57 (0.298)
ESD IDENT
4.32 (0.170)
MAX.
* QUALIFIED PARTS ONLY
0.51 (0.020)
MIN.
Thermal Resistance
3.81 (0.150)
MIN.
0.20 (0.008)
0.33 (0.013)
Maximum Output MOSFET Junction to Case – θ = 15°C/W
JC
ESD Classification
7.36 (0.290)
7.87 (0.310)
2.29 (0.090)
2.79 (0.110)
0.51 (0.020)
MAX.
(MIL-STD-883, Method 3015) .......................... ( ), Class 2
NOTE: DIMENSIONS IN MILLIMETERS (INCHES).
Absolute Maximum Ratings
Parameter
Symbol
Min.
-65°
-55°
Max.
+150°
Units
Note
Storage Temperature Range
Operating Ambient Temperature
Junction Temperature
T
S
C
C
C
C
C
T
A
+125°
T
J
+150°
Operating Case Temperature
T
C
+145°
1
Lead Solder Temperature
260° for 10 s
(1.6 mm below seating plane)
Average Input Current
I
20
40
mA
mA
F
Peak Repetitive Input Current
I
FPK
(Pulse Width < 100 ms; duty cycle < 50%)
Peak Surge Input Current
(Pulse Width < 0.2 ms; duty cycle < 0.1%)
I
100
5
mA
V
FPK surge
Reverse Input Voltage
V
R
Average Output Current - Figure 2
Connection A
0.8
1.6
A
A
I
O
Connection B
Single Shot Output Current - Figure 3
Connection A (Pulse width < 10 ms)
Connection B (Pulse width < 10 ms)
Output Voltage
5.0
A
A
I
OPK surge
10.0
Connection A
-90
-90
90
90
V
V
V
O
Connection B
Average Output Power Dissipation - Figure 4
800
mW
2
ꢁ
Recommended Operating Conditions
Parameter
Symbol
Min.
5
Max.
20
Units
mA
mA
V
Note
10
Input Current (on)
Input Current (on)
Input Voltage (off)
Operating Temperature
I
I
F(ON)
10
20
11
F(ON)
V
0
0.6
F(OFF)
T
A
-55°
+125°
C
Hermetic Optocoupler Options
Note: Dimensions in millimeters (inches).
D
e
s
c
r
i
t
i
n
Option
100
Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is
available on commercial and hi-rel product.
4.32 (0.170)
MAX.
0.51 (0.020)
1.14 (0.045)
MIN.
0.20 (0.008)
0.33 (0.013)
1.40 (0.055)
2.29 (0.090)
2.79 (0.110)
0.51 (0.020)
MAX.
7.36 (0.290)
7.87 (0.310)
Lead finish is solder dipped rather than gold plated. This option is available on commercial and hi-
rel product. DSCC Drawing part numbers contain provisions for lead finish.
200
300
Surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. This op-
tion is available on commercial and hi-rel product. This option has solder dipped leads.
4.57 (0.180)
MAX.
4.57 (0.180)
MAX.
0.20 (0.008)
0.33 (0.013)
0.51 (0.020)
MIN.
5˚ MAX.
1.40 (0.055)
1.65 (0.065)
9.65 (0.380)
9.91 (0.390)
2.29 (0.090)
2.79 (0.110)
0.51 (0.020)
MAX.
600
Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is
available on commercial and hi-rel product.
3.81 (0.150)
MAX.
0.20 (0.008)
0.33 (0.013)
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
1.02 (0.040)
TYP.
7.36 (0.290)
7.87 (0.310)
ꢂ
Electrical Specifications
T =-55°C to +125°C, unless otherwise specified. See note 9.
A
Parameter
Group A,
Sub-group
Test Conditions
V = 0.6 V, I = 10 mA
Min. Typ.* Max. Units
Fig.
Notes
Sym.
|V
Output
|
1, 2, 3
90
110
V
5
O(OFF)
F
O
Withstand
Voltage
Output On-Resistance
Connection A
I = 10 mA, I = 800 mA,
(pulse duration ≤ 30 ms)
0.40 1.0
1.0
3, 11
3, 10
3, 11
3, 10
F
O
I = 5 mA, I = 800 mA,
F
O
(pulse duration ≤ 30 ms)
R
(ON)
1, 2, 3
1, 2, 3
W
6, 7
Connection B
I = 10 mA, I = 1.6 A,
0.12 0.25
F
O
(pulse duration ≤ 30 ms)
I = 5 mA, I = 1.6 A,
0.25
F
O
(pulse duration ≤ 30 ms)
-4
Output
Leakage
Current
I
V = 0.6 V, V = 90 V
10
10
mA
8
9
O(OFF)
F
O
Input
Forward
Voltage
I = 10 mA
F
11
10
V
V
1, 2, 3
1, 2, 3
1.0 1.24 1.7
5.0
V
V
F
I = 5 mA
F
Input Reverse
Breakdown
Voltage
I = 100 mA
R
R
Input-Output
Insulation
RH ≤ 65%, t = 5 s,
= 1500 Vdc, T = 25°C
1.0
mA
ms
4, 5
11
I
1
I-O
V
I-O
A
Turn On Time
I = 10 mA, V = 28 V,
1.25 6.0
F
DD
1,
10, 11,
12, 13
I
O
= 800 mA
t
9, 10, 11
ON
I = 5 mA, V = 28 V,
6.0
0.02 0.25
0.25
10
11
10
F
DD
I
O
= 800 mA
Turn Off Time
I = 10 mA, V = 28 V,
F
DD
1,
10, 14,
15
I
O
= 800 mA
t
9, 10, 11
9
ms
OFF
I = 5 mA, V = 28 V,
F
DD
I
O
= 800 mA
Output
Transient
Rejection
dVo
dt
V
V
= 50 V, C = 1000 pF, 1000
V/ms
17
PEAK
M
C = 15 pF, R ≥ 1 MW
L
M
Input-Output
Transient
dVio
dt
9
= 5 V, V
= 50 V,
DD
I-O(PEAK)
500
V/ms
18
R = 20 kW, C = 15 pF
L
L
Rejection
ꢃ
Typical Characteristics
All typical values are at T = 25°C, I (ON) = 10 mA, V (OFF) = 0.6 V unless otherwise specified.
A
F
F
Parameter
Symbol
Test Conditions
V = 28 V, f = 1 MHz
O
Typ.
145
2
Units
pF
Fig.
16
Notes
Output Off-Capacitance
Output Offset Voltage
C
O(OFF)
|V
OS
|
I = 10 mA, I = 0 mA
mV
19
7
F
O
Input Diode Temperature
Coefficient
DV /DT
I = 10 mA
F
-1.4
mV/°C
F
A
Input Capacitance
C
V = 0 V, f = 1MHz
20
pF
pF
W
8
4
4
6
IN
I-O
I-O
ON
F
Input-Output Capacitance
Input-Output Resistance
Turn On Time With Peaking
C
R
V
= 0 V, f = 1 MHz
= 500 V, t = 60 s
1.5
I-O
I-O
13
V
10
t
I
= 100 mA,
0.22
ms
1
FPK
I
= 10 mA
FSS
V
= 28 V,
DD
I
= 800 mA
O
Notes:
1. Maximum junction to case thermal resistance for the device is 15°C/W, where case temperature, T , is measured at the center of the package
C
bottom.
2. For rating, see Figure 4. The output power P rating curve is obtained when the part is handling the maximum average output current I as
O
O
shown in Figure 2.
3. During the pulsed R measurement (I duration <30 ms), ambient (T ) and case temperature (T ) are equal.
ON
O
A
C
4. Device considered a two terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together.
5. This is a momentary withstand test, not an operating condition.
6. For a faster turn-on time, the optional peaking circuit shown in Figure 1 may be implemented.
7.
V
is a function of I , and is defined between pins 5 and 8, with pin 5 as the reference. V must be measured in a stable ambient (free of tem-
OS F OS
perature gradients).
8. Zero-bias capacitance measured between the LED anode and cathode.
9. Standard parts receive 100% testing at 25°C (Subgroups 1 and 9). SMD, Class H and Class E parts receive 100% testing at 25°C, 125°C and -55°C
(Subgroups 1 and 9, 2 and 10, 3 and 11 respectively).
10. Applies to HSSR-7112 and 5962-9314002Hxx devices only.
11. Applies to HSSR-7110, HSSR-7111, HSSR-711E, 5962-9314001Hxx and 5962-9314001Exx devices only.
HSSR-7110
1
2
3
4
8
7
6
5
V
(+5V)
CC
I
F
+
V
F
-
R2
1200
Ω
R3
R1
330 Ω
C
15 µF
IN
1/4 54ACTOO
1/4 54ACTOO*
R1 = REQUIRED CURRENT LIMITING RESISTOR
FOR IF (ON) = 10 mA.
R2 = PULL-UP RESISTOR FOR VF (OFF) < 600 mV;
IF (VCC-VOH ) < 600 mV, OMIT R2.
R3, C = OPTIONAL PEAKING CIRCUIT.
TYPICAL VALUES
R3
(Ω)
I
HSSR-7110
tON (ms)
F (PK)
(mA)
-
10 (NO PK)
2.0
330
100
33
* USE SECOND GATE IF IF (PK) > 50 mA
REMINDER: TIE ALL UNUSED INPUTS TO GROUND OR V
20
40
100
1.0
0.48
0.22
CC
Figure 1. Recommended Input Circuit.
ꢄ
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
12
11
10
9
I
10 mA
F
CONNECTION-B
CONNECTION-A
8
7
6
CONNECTION - A
CONNECTION - A
I
10 mA
5
4
3
F
I
10 mA
F
θ
= 40˚ C/W
= 80˚ C/W
CA
CA
θ
= 40˚ C/W
= 80˚ C/W
CA
CA
θ
θ
0
0
-55 -25
5
35
65
95 125 155
-55 -25
5
35
65
95 125 155
10
200
400
600
800
1000
PULSE DURATION - ms
T
- AMBIENT TEMPERATURE - ˚C
T
- AMBIENT TEMPERATURE - ˚C
A
A
Figure 2. Maximum Average Output Cur-
rent Rating vs. Ambient Temperature.
Figure 3. Single Shot (non-repetitive) Out-
put Current vs. Pulse Duration.
Figure 4. Output Power Rating vs. Ambient
Temperature.
1.10
1.8
0.8
CONNECTION - A
CONNECTION - A
V
I
= 0.6 V
= 10 µA
F
O
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
I
I
10 mA
(PULSE DURATION
30 ms)
I
I
10 mA
= 800 mA
O
O
0.6
0.4
0.2
F
O
1.6
1.4
1.2
1.0
(PULSE DURATION 30 ms)
0
T
= 125˚C
A
-0.2
T
T
= 25˚C
A
A
-0.4
-0.6
-0.8
= -55˚C
0.8
0.6
-55
-25
5
35
65
95
125
-55
-25
5
35
65
95
125
-0.6 -0.4
V - OUTPUT VOLTAGE - V
O
-0.2
0
0.2
0.4
0.6
- AMBIENT TEMPERATURE - ˚C
T
- AMBIENT TEMPERATURE - ˚C
T
A
A
Figure 5. Normalized Typical Output With-
stand Voltage vs. Temperature.
Figure 6. Normalized Typical Output Resis-
tance vs. Temperature.
Figure 7. Typical On State Output I-V Char-
acteristics.
-7
-1
10
10
CONNECTION A
V
V
= 0.6 V
= 90 V
F
O
-2
10
-8
-9
10
10
-3
10
T
= 125˚C
A
-4
-5
10
10
T
T
= 25˚C
A
A
-10
10
10
= -55˚C
1.4
-6
-11
10
0.4
0.6
0.8
1.0
1.2
1.6
20
35
65
95
125
V
- INPUT FORWARD VOLTAGE - V
F
T
- TEMPERATURE - ˚C
A
Figure 8. Typical Output Leakage Current
vs. Temperature.
Figure 9. Typical Input Forward Current vs.
Input Forward Voltage.
ꢅ
V
DD
PULSE GEN.
= 50 Ω
50%
50%
Z
O
R
C
I
L
t = t = 5 ns
F
f
r
HSSR-7110
P.W. = 15 ms
8
7
6
5
1
2
3
4
V
O
MONITOR NODE
I
F
+
= 25 pF
V
L
F
-
(C INCLUDES PROBE AND
FIXTURE CAPACITANCE)
L
V
O
90%
I
F
10%
MONITOR
R (MONITOR)
200 Ω
t
t
ON
OFF
Figure 10. Switching Test Circuit for t
,
ON
GND
GND
3.0
2.6
2.0
CONNECTION A
= 28 V
CONNECTION A
CONNECTION - A
V
2.4
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
DD
I
V
= 10 mA
I
I
T
= 10 mA
= 800 mA
= 25˚C
2.6
2.2
F
F
O
A
I
T
= 800 mA
= 25˚C
O
A
= 28 V
DD
= 800 mA
2.2
2.0
I
O
1.8
1.4
1.0
0.6
0.2
1.8
1.6
1.4
1.2
1.0
0.8
0
5
10
15
20
-55
-25
5
35
65
95
125
0
10 20 30 40 50 60 70 80 90
- VOLTAGE - V
I
- INPUT CURRENT - mA
F
T
- TEMPERATURE - ˚C
V
A
DD
Figure 11. Typical Turn On Time vs. Tem-
perature.
Figure 12. Typical Turn On Time vs. Input
Current.
Figure 13. Typical Turn On Time vs. Voltage.
15.0
45
440
CONNECTION A
CONNECTION A
CONNECTION A
40
14.8
f = 1 MHz
= 25˚C
I
= 10 mA
= 28 V
= 800 mA
400
360
320
280
240
200
160
120
V
I
= 28 V
F
DD
DD
T
V
I
= 800 mA
= 25˚C
A
O
A
14.6
14.4
35
30
25
20
15
10
5
T
O
14.2
14.0
13.8
13.6
13.4
13.2
-55
-25
5
35
65
95 125
5
10
15
20
0
5
10
1 5
20
25
30
V
- OUTPUT VOLTAGE - V
T
-TEMPERATURE - ˚C
O(OFF)
A
I
- INPUT CURRENT - mA
F
Figure 14. Typical Turn Off Time vs. Tem-
perature.
Figure 15. Typical Turn Off Time vs. Input
Current.
Figure 16. Typical Output Off Capacitance
vs. Output Voltage.
ꢆ
HSSR-7110
V
M
1
2
3
4
8
7
6
5
MONITOR
NODE
I
F
C
M
R
M
INPUT OPEN
+
V
F
-
V
+
PEAK
-
PULSE
GENERATOR
C
R
INCLUDES PROBE AND FIXTURE CAPACITANCE
INCLUDES PROBE AND FIXTURE RESISTANCE
M
M
90%
90%
V
PEAK
10%
10%
t
t
f
r
(MAX) ≤ 5 V
V
M
(0.8) V
(0.8) V
dV
d
(PEAK)
r
(PEAK)
t
f
O
t
=
OR
t
OVERSHOOT ON V
IS TO BE ≤ 10%.
PEAK
Figure 17. Output Transient Rejection Test Circuit.
V
DD
HSSR-7110
R
L
V
O
1
2
3
4
8
7
6
5
I
F
+
C
L
V
F
(C INCLUDES PROBE PLUS
L
FIXTURE CAPACITANCE )
-
S
1
A
B
V
IN
V
I-O
+
-
PULSE
GENERATOR
90%
90%
V
I-O(PEAK)
10%
10%
t
f
t
r
V
O(OFF)
AT A (V = 0 V)
S
1
F
(min) ≥ 3.25 V
V
O(OFF)
10
V
(max) 0.8
O(ON)
V
S
O(ON)
11
AT B (I = 10 mA) OR (I = 5 mA)
1
F
F
(0.8) V
(0.8) V
I-O(PEAK)
dV
dt
I-O(PEAK)
I-O
=
OR
t
t
r
f
OVERSHOOT ON V
IS TO BE ≤ 10%
I-O(PEAK)
Figure 18. Input-Output Transient Rejection Test Circuit.
ꢇ
T
T
T
T
jf2
ISOTHERMAL CHAMBER
HSSR-7110
je
jf1
jd
104
15
15
15
I
F
1
2
3
4
8
7
6
5
+
T
C
+
-
DIGITAL
NANOVOLTMETER
V
OS
θ
CA
T
A
-
T
= LED JUNCTION TEMPERATURE
= FET 1 JUNCTION TEMPERATURE
= FET 2 JUNCTION TEMPERATURE
= FET DRIVER JUNCTION TEMPERATURE
je
T
T
T
T
jf1
jf2
jd
C
Figure 19. Voltage Offset Test Setup.
= CASE TEMPERATURE (MEASURED AT CENTER
OF PACKAGE BOTTOM)
HSSR-7110
V
(SEE NOTE)
O
R
OUT
8
7
6
5
1
2
3
4
T
= AMBIENT TEMPERATURE (MEASURED 6" AWAY
FROM THE PACKAGE)
A
1.0 Ω
θ
= CASE-TO-AMBIENT THERMAL RESISTANCE
CA
V
IN
R
IN
ALL THERMAL RESISTANCE VALUES ARE IN ˚C/W
200 Ω
R
5.5 V
OUT
Figure 21. Thermal Model.
1.0 Ω
NOTE:
IN ORDER TO DETERMINE VOUT
BE MEASURED FOR THE BURN-IN BOARDS TO BE USED. THEN, KNOWING
CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST
CA , DETERMINE THE
θ
CORRECT OUTPUT CURRENT PER FIGURES 2 AND 4 TO INSURE THAT THE DEVICE MEETS THE
DERATING REQUIREMENTS AS SHOWN.
Figure 20. Burn-In Circuit.
Applications Information
the output contact when a DC current signal is applied to
the output pins for a duration sufficient to reach thermal
Thermal Model
The steady state thermal model for the HSSR-7110 is
shown in Figure 21. The thermal resistance values given
in this model can be used to calculate the temperatures
at each node for a given operating condition. The thermal
resistances between the LED and other internal nodes are
very large in comparison with the other terms and are
omitted for simplicity. The components do, however, in-
teractindirectlythroughθ ,thecase-to-ambientthermal
resistance. All heat generated flows through θ , which
raises the case temperature T accordingly. The value of
equilibrium.R includestheeffectsofthetemperaturerise
SS
of each element in the thermal model. Rating curves are
shown in Figures 2 and 4. Figure 2 specifies the maximum
averageoutputcurrentallowableforagivenambienttem-
perature. Figure 4 specifies the output power dissipation
allowable for a given ambient temperature. Above 55°C
(for θ = 80°C/W) and 107°C (for θ = 40°C/W), the maxi-
CA
CA
CA
mum allowable output current and power dissipation are
CA
2
related by the expression R = P (max)/ (I (max)) from
SS
O
O
C
which R can be calculated. Staying within the safe area
SS
θ
depends on the conditions of the board design and
CA
assuresthatthesteady-statejunctiontemperaturesremain
is, therefore, determined by the designer.
less than 150°C. As an example, for T = 95°C and θ
=
A
CA
80°C/W, Figure 2 shows that the output current should be
limited to less than 610 mA. A check with Figure 4 shows
The maximum value for each output MOSFET junction-
to-case thermal resistance is specified as 15°C/W. The
thermal resistance from FET driver junction-to-case is also
15°C/W. The power dissipation in the FET driver, however,
is negligible in comparison to the MOSFETs.
that the output power dissipation at T = 95°C and I
=
A
O
610 mA, will be limited to less than 0.35 W. This yields an
of 0.94 Ω.
R
SS
Design Considerations for Replacement of Electro-
Mechanical Relays
On-Resistance and Rating Curves
The output on-resistance, R , specified in this data sheet,
ON
The HSSR-7110 family can replace electro-mechanical re-
lays with comparable output voltage and current ratings.
The following design issues need to be considered in the
replacement circuit.
istheresistancemeasuredacrosstheoutputcontactwhen
a pulsed current signal (I = 800 mA) is applied to the out-
O
put pins. The use of a pulsed signal (≤ 30 ms) implies that
each junction temperature is equal to the ambient and
case temperatures. The steadystate resistance, R , on the
other hand, is the value of the resistance measured across
SS
Input Circuit: The drive circuit of the electro-mechani-
cal relay coil needs to be modified so that the average
10
References:
forward current driving the LED of the HSSR- 7110 does
not exceed 20 mA. A nominal forward drive current of 10
mA is recommended. A recommended drive circuit with
1. Application Note 1047, “Low On-Resistance Solid State
Relays for High Reliability Applications.”
5 volt V and CMOS logic gates is shown in Figure 1. If
CC
2. Reliability Data for HSSR-7110.
higher V voltages are used, adjust the current limiting
CC
resistor to a nominal LED forward current of 10 mA. One
important consideration to note is that when the LED is
turned off, no more than 0.6 volt forward bias should be
applied across the LED. Even a few microamps of current
may be sufficient to turn on the HSSR- 7110, although it
may take a considerable time. The drive circuit should
maintain at least 5 mA of LED current during the ON
condition. If the LED forward current is less than the 5
mA level, it will cause the HSSR-7110 to turn on with a
longer delay. In addition, the power dissipation in the
output power MOSFETs increases, which, in turn, may
violate the power dissipation guidelines and affect the
reliability of the device.
MOV is a registered trademark of GE/RCA Solid State.
TransZorb is a registered trademark of General Semicon-
ductor.
MIL-PRF-38534 Class H, Class E and DSCC SMD Test
Program
Class H:
Avago Technologies’ Hi-Rel Optocouplers are in compli-
ance with MIL-PRF-38534 Class H. Class H devices are also
in compliance with DSCC drawing 5962-93140.
Testing consists of 100% screening and quality confor-
mance inspection to MIL-PRF-38534.
Output Circuit: Unlike electromechanical relays, the
designer should pay careful attention to the output
on-resistance of solid state relays. The previous section,
“On- Resistance and Rating Curves” describes the issues
that need to be considered. In addition, for strictly dc
applications the designer has an advantage using Con-
nection B which has twice the output current rating as
ConnectionA.Furthermore,fordc-onlyapplications,with
Connection B the on-resistance is considerably less when
compared to Connection A.
Class E:
Class E devices are in compliance with DSCC drawing
5962-9314001Exx. Avago Technologies has defined the
Class E device on this drawing to be based on the Class
K requirements of MIL-PRF-38534 with exceptions. The
exceptions are as follows:
1. Nondestructive Bond Pull, Test method 2023 of MIL-
STD-883 is device screening is not required.
Output over-voltage protection is yet another important
designconsiderationwhenreplacingelectro-mechanical
relays with the HSSR-7110. The output power MOSFETs
can be protected using Metal oxide varistors (MOVs) or
TransZorbs against voltage surges that exceed the 90 volt
output withstand voltage rating. Examples of sources of
voltage surges are inductive load kickbacks, lightning
strikes,andelectro-staticvoltagesthatexceedthespecifi-
cationsonthisdatasheet.Formoreinformationonoutput
load and protection refer to Application Note 1047.
2. Particle Impact Noise Detection (PIND), Test method
2020 of MIL-STD-883 in device screening and group C
testing is not required.
3. Die Shear Strength, Test method 2019 of MIL-STD-883
in group B testing is not required.
4. InternalWaterVapor Content,Test method 1018 of MIL-
STD-883 in group C testing is not required.
5. Scanning Electron Microscope (SEM) inspections, Test
method 2018 of MIL-STD-883 in element evaluation is
not required.
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
5989-1944EN - April 3, 2006
11
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