MGA-16516-BLKG [AVAGO]
Low Noise, High Linearity Match Pair Low Noise Amplifier;
| 型号： | MGA-16516-BLKG |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Low Noise, High Linearity Match Pair Low Noise Amplifier |
| 文件： | 总16页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MGA-16516
Low Noise, High Linearity Match Pair Low Noise Amplifier
Data Sheet
Description
Features
3
Avago Technologies’ MGA-16516 is an economical, easy- ꢀꢁ 4.0 x 4.0 x 0.85 mm 16-lead QFN
to-use GaAs MMIC match pair Low Noise Amplifier (LNA).
The LNA has low noise and high linearity achieved through
the use of Avago Technologies’ proprietary 0.25um GaAs
ꢀꢁ Low noise figure
ꢀꢁ High linearity performance
[1]
Enhancement-mode pHEMT process. It is housed in a ꢀꢁ GaAs E-pHEMT Technology
3
miniature 4.0 x 4.0 x 0.85mm 16-pin Quad-Flat-Non-Lead
3
ꢀꢁ Low cost small package size: 4.0x4.0x0.85 mm
ꢀꢁ Excellent uniformity in product specifications
(QFN) package. The compact footprint and low profile
coupled with low noise, high gain and high linearity make
the MGA-16516 an ideal choice as a low noise amplifier for ꢀꢁ Tape-and-Reel packaging option available
cellular infrastructure for GSM and CDMA. This device is
Specifications
850MHz; 5V, 50mA (typ) per section
ꢀꢁ 17.7 dB Gain
applicable to both Single and Balance mode. It is designed
for optimum use from 500MHz to 1.7GHz. For optimum
performance at higher frequency from 1.7GHz to 2.7GHz,
the MGA-17516 is recommended. Both MGA-16516 and
MGA-17516 share the same package and pinout.
ꢀꢁ 0.4 dB Noise Figure
ꢀꢁ 11.8 dBm Input IP3
Package Marking
ꢀꢁ 18.3 dBm Output Power at 1dB gain compression
Applications
ꢀꢁ Low noise amplifier for cellular infrastructure for GSM
and CDMA.
Pin 12
Pin 11
Pin 10
Pin 9
Pin 1
Pin 2
Pin 3
Pin 4
ꢀꢁ Other ultra low noise application.
16516
YYWW
XXX
GND
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
TOP VIEW
BOTTOM VIEW
ESD Human Body Model = 350 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note:
Package marking provides orientation and identification
“16516” = Device Code
“YYWW“= Year and Work Week
“XXXX” = Last 4 digit of Device Lot Number
Pin Configuration
Pin
1
Use
Not Used
Not Used
Not Used
Not Used
RFin1
[5]
[6]
[7]
[8]
[16]
[15]
[14]
[13]
2
3
4
5
6
Not Used
Not Used
RFin2
7
8
9
Not Used
Not Used
Not Used
Not Used
RFout2
10
11
12
13
14
15
16
Not Used
Not Used
RFout1
Simplified Schematic
Vgg1
Vdd1
Ca11
Ca7
Ca5
Ra1
L1
Ra4
Ca9
L2
Ra7
C1
C3
C2
C4
RFin a
RFin b
RFout a
RFout b
[5]
[6]
[7]
[8]
[16]
[15]
[14]
[13]
L3
Rb1
Rb7
L4
Cb5
Cb7
Cb9
Rb4
Cb11
Vgg2
Vdd2
Note:
ꢀꢁ Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
2
[2]
Absolute Maximum Rating T = 25°C
A
[3]
Symbol
Parameter
Units
V
Absolute Max.
Thermal Resistance
(Vdd = 5.0V, Idd = 50mA per channel),
jc = 49.4°C/W per channel
Vdd
Device Voltage, RF output to ground
Gate Voltage
5.5
1
ꢂ
Vgg
V
Notes:
2. Operation of this device in excess of any of
these limits may cause permanent damage.
3. Thermal resistance measured using Infra-Red
Measurement Technique with both channels
Pin,max
CW RF Input Power
(Vdd = 5.0, Id=50mA)
dBm
15
Idd
Device Current,
RFout to ground per channel
mA
100
turned on hence I
=100mA.
dd_total
4. Power dissipation with both channels turned
on. Board temperature T is 25°C. Derate at
Pdiss
Tj
Total Power Dissipation [4]
Junction Temperature
Storage Temperature
W
°C
°C
1
B
20mW/°C for T >100°C.
B
150
TSTG
-65 to 150
[7-10]
Electrical Specifications
RF performance at T = 25°C, V 5V, I = 50mA, 850MHz and 900MHz given for each RF channel, measured on demo
A
dd
dd
board in Figure 5 with component list in Table1 for 850 MHz matching.
Symbol
Vgg
Parameter and Test Condition
Operational Gate Voltage, Idd = 50mA
Gain
Frequency
Units
V
Min.
Typ.
0.48
17.7
17.4
11.8
12.4
0.40
0.41
18.3
19.3
8.9
Max.
0.38
0.63
dB
Gain
850
900
850
900
850
900
850
900
850
900
850
900
850
900
850
900
dB
15.8
10.5
18.8
0.70
IIP3 [8]
NF [9]
OP1dB
IRL
Output Third Order Intercept Point
Noise Figure
dBm
dBm
dB
dB
dBm
dBm
dB
Output Power at 1dB Gain Compression
Input Return Loss, 50ꢃ source
Output Return Loss, 50ꢃ load
Reverse Isolation
dB
7.0
dB
3.3
ORL
dB
4.7
dB
29.9
29.5
45
REV ISOL
dB
dB
ISOL1-2
Notes:
Isolation between RFin1 and RFin2
dB
45
7. Measurements at 850 MHz and 900 MHz are obtained using demo board described in Figure 5.
8. IIP3 test condition:
a.
b.
F
F
= 850 MHz, F = 851 MHz with input power of -15dBm per tone.
RF1
RF2
= 900 MHz, F = 901MHz with input power of -15dBm per tone.
RF1
RF2
9. For NF data, board losses of the input have not been de-embedded.
10. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
3
Product Consistency Distribution Charts
Mean : 0.483
Min : 0.38
Max : 0.63
Mean : 0.41
Max : 0.70
Figure 1. Vgg @ 900MHz, 5V, 50mA
Mean = 0.48
Figure 2. Noise Figure @ 900MHz, 5V, 50mA
Mean = 0.41
Mean : 12.4
Min : 10.5
Mean : 17.4
Min : 15.8
Max : 18.8
Figure 3. IIP3 @ 900MHz, 5V, 50mA
Mean = 12.4
Figure 4. Gain @ 900MHz, 5V, 50mA
Mean = 17.4
Notes:
1. Distribution data samples size is 500 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits. Circuit losses have not been de-embedded from actual measurement.
4
Demo Board Layout
– Recommended PCB material is 10 mils Rogers RO4350
with a total thickness 62 mils
– Suggested component values may vary according to
layout and PCB material.
Figure 5. Demo Board Layout Diagram
Demo Board Schematic
Vgg1
Vdd1
Table 1. Component list for 850 MHz matching.
Part
Size
Value
Detail Part Number
GJM1555C1H150JB01D
GJM1555C1H3R3CB01D
0402CS-30NXJLU
Ca11
C1 , C3
C2, C4
0402
0402
0402
0402
0402
0402
0402
0402
0402
0805
15pF(Murata)
3.3pF(Murata)
30nH(Coilcraft)
22nH(Toko)
Ca7
Ra1
Ra4
L1, L3
Ca5
Ca9
L2
L1
L2, L4
LL1005-FHL22NJ
Ra7
Ra7, Rb7
Ca5, Cb5
Ca9, Cb9
Ra1, Rb1
Ra4, Rb4
Ca7, Cb7
110Ohm(ROhm) MCR01MZCJ111
C1
C3
C2
12pF(Murata)
6pF(Murata)
GJM1555C1H120JB01D
RFin a
RFin b
RFout a
RFout b
[5]
[6]
[7]
[8]
[16]
[15]
[14]
[13]
GJM1555C1H6R0CB01D
MCR01MZSJ560
56Ohm(ROhm)
9.1Ohm(Rohm)
4.7uF(Murata)
4.7uF(Murata)
C4
MCR01MZSJ9R1
GRM21BR60J475KA11L
GRM21BR60J475KA11L
Ca11, Cb11 0805
L3
Rb7
L4
Cb9
Cb5
Rb1
Rb4
Cb11
Cb7
Vgg2
Vdd2
Figure 6. Demo Board Schematic Diagram
5
MGA-16516 Typical Performance
RF performance for each RF channel at T = 25°C, V = 5V, I = 50mA unless otherwise stated. OIP3 is measured with
A
dd
dd
input power of -15dBm per tone.
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
40
50
60
40
50
60
Idd(mA)
Idd(mA)
Figure 7. Fmin vs Idd at 5V at 700MHz
Figure 8. Fmin vs Idd at 5V at 900MHz
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
40
50
60
40
50
60
Idd(mA)
Idd(mA)
Figure 9. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 700MHz
Figure 10. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 900MHz
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
0
0
40
50
60
40
50
60
Idd(mA)
Idd(mA)
Figure 11. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 700MHz
Figure 12. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 900MHz
6
MGA-16516 Typical Performance
RF performance for each RF channel at T = 25°C, V =5V, I = 50mA unless otherwise stated. OIP3 is measured with
A
dd
dd
input power of -15dBm per tone.
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
6
4
6
4
2
2
0
0
40
50
Idd(mA)
60
40
50
Idd(mA)
60
Figure 13. OP1dB vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 700MHz
Figure 14. OP1dB vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 900MHz
100
1
Vgg=0.48
Idd=40mA
Idd=50mA
Idd=60mA
Vgg=0.50
0.9
0.8
90
Vgg=0.52
Vgg=0.54
80
Vgg=0.56
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Vgg=0.58
70
60
50
40
30
20
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
0.7
0.9
1.7
Vdd (V)
Frequency (GHz)
Figure 15. Fmin vs Frequency and Idd at 5V
Figure 16. I-V curve
22
20
18
16
14
12
10
8
6
4
2
0
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
-40 °C
25 °C
85 °C
-40°C
25°C
85°C
0.5
0.65
0.7
0.75
Frequency(GHz)
0.8
0.9
1.7
0.5
0.7
0.9
1.7
Figure 17. Gain vs Frequency and Temperature tuned for Optimum OIP3 and
Fmin at 5V 50mA
Figure 18. Fmin vs Frequency and Temperature tuned for Optimum OIP3 and
Fmin at 5V 50mA
7
MGA-16516 Typical Performance
RF performance at T = 25°C, V =5V, I = 50mA unless otherwise stated. OIP3 is measured with input power of -15dBm
A
dd
dd
per tone.
22
20
18
16
14
12
10
8
6
4
2
0
45
40
35
30
25
20
15
10
5
-40°C
25°C
85°C
-40°C
25°C
85°C
0
0.5
0.65
0.7
0.75
0.8
0.9
1.7
0.5
0.65
0.7
0.75
0.8
0.9
1.7
Frequency(GHz)
Frequency(GHz)
Figure 19. OP1dB vs Frequency and Temperature tuned for Optimum OIP3
and Fmin at 5V 50mA
Figure 20. OIP3 vs Frequency and Temperature tuned for Optimum OIP3 and
Fmin at 5V 50mA
Below is the table showing the MGA-16516 Reflection Coefficient Parameters tuned for Maximum OIP3, Vdd=5V,
Idd=50mA.
Gamma Load position
Frequency(GHz)
0.50
Magnitude
0.472
Angle
100.2
101.1
119.4
125.1
6.9
OIP3(dBm)
29.2
P1dB(dBm)
17.6
0.65
0.594
34.6
18.4
0.70
0.498
32.6
19.2
0.75
0.457
32.2
18.9
0.80
0.512
32.3
18.2
0.90
0.594
-11.5
24.3
34.5
18.3
1.70
0.440
38.6
20.2
Notes:
RFout
1. The Maximum OIP3 values are calculated based on Load pull
measurements on approximately 100 different impedances using
Maury’s Load pull test system.
RFin
reference plane
reference plane
[5]
[6]
[7]
[8]
[16]
[15]
[14]
[13]
2. Measurements are conducted on 0.010 inch thick ROGER 4350. The
input reference plane is at the end of the RFin pin and the output
reference plane is at the end of the RFout pin as shown in Figure 21.
3. Gamma Load for maximum OIP3 with biasing of 3V 50mA, 3.5V
50mA, 4V 50mA, 4.5V 50mA, 5V 40mA, 5V 50mA and 5V 60mA from
500 MHz to 3.5GHz are available upon request.
Figure 21.
8
MGA-16516 Typical Performance
RF performance at T = 25°C, Vdd =5V, Idd= 50mA, given for each RF channel, measured on demo board in Figure 5 with
A
component list in Table1 for 850 MHz matching. IIP3 is measured with input power of -15dBm per tone.
20
18
16
14
12
10
8
34
32
30
28
26
24
22
20
6
4
Channel A
Channel B
Channel A
Channel B
2
0
600 650 700 750 800 850 900 950 1000 1050
600 650 700 750 800 850 900 950 1000 1050
Frequency(MHz)
Frequency(MHz)
Figure 22. Gain vs Frequency and channel
Figure 23. Reverse Isolation vs Frequency and channel
6
5
4
3
2
12
10
8
6
4
2
1
0
Channel A
Channel A
Channel B
Channel B
0
600 650 700 750 800 850 900 950 1000 1050
600 650 700 750 800 850 900 950 1000 1050
Frequency(MHz)
Frequency(MHz)
Figure 24. Input Return Loss vs Frequency and channel
Figure 25. Output Return Loss vs Frequency and channel
18
16
14
12
10
8
16
14
12
10
8
6
6
4
4
Channel A
Channel B
Channel A
2
2
Channel B
0
550
0
650
750
850
950
1050
600 650 700 750 800 850 900 950 1000 1050
Frequency (GHz)
Frequency (MHz)
Figure 26. OP1dB vs Frequency and channel
Figure 27. IIP3 vs Frequency and channel
9
MGA-16516 Typical Performance
RF performance at T = 25°C, Vdd =5V, Idd= 50mA, given for each RF channel, measured on demo board in Figure 5 with
A
component list in Table1 for 850 MHz matching.
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
IRL
IRL
ORL
ORL
Gain
Rev Isol
Gain
Rev Isol
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Frequency(GHz)
Frequency(GHz)
Figure 28. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs
Frequency for channel A
Figure 29. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs
Frequency for channel A
5.00
4.00
3.00
2.00
0.65
0.6
0.55
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
1.00
Channel A
Channel B
Channel A
Channel B
0.1
0.05
0.00
0
0.00
4.00
8.00
12.00
16.00
20.00
650
700
750
800
850
900
950
1000
Frequency(GHz)
Frequency(MHz)
Figure 30. K Factor vs Frequency and channel
Figure 31. NF vs Frequency and channel
10
MGA-16516 Typical Scattering Parameters, Vdd=5V, Idd=50mA
S
11
S
S
S
22
21
12
Freq
GHz
Mag.
0.96
0.65
0.50
0.48
0.42
0.40
0.40
0.40
0.40
0.41
0.44
0.45
0.45
0.45
0.48
0.49
0.48
0.44
0.42
0.46
0.52
0.57
0.60
0.62
0.65
0.72
Ang.
dB
Mag.
31.87
16.33
10.80
9.94
6.94
5.54
5.28
4.24
3.50
2.59
2.01
1.61
1.32
1.09
0.91
0.79
0.70
0.65
0.57
0.51
0.46
0.42
0.40
0.38
0.36
0.31
Ang.
Mag.
Ang.
Mag.
0.48
0.18
0.14
0.13
0.12
0.14
0.14
0.17
0.22
0.30
0.38
0.46
0.55
0.64
0.68
0.71
0.71
0.72
0.76
0.79
0.78
0.76
0.76
0.77
0.77
0.78
Ang.
0.1
-19.1
-81.2
-116.2
-121.1
-148.5
-164.6
-168.1
176.2
161.9
136.4
115.0
99.2
28.56
24.26
20.67
19.94
16.82
14.88
14.45
12.54
10.89
8.26
160.5
116.5
93.9
0.001
0.030
0.044
0.047
0.063
0.076
0.079
0.096
0.111
0.140
0.163
0.183
0.197
0.207
0.211
0.218
0.228
0.241
0.242
0.239
0.238
0.242
0.247
0.253
0.255
0.237
76.8
-33.2
-88.0
-124.9
-128.2
-164.5
171.7
167.0
146.5
131.7
110.5
86.9
0.5
59.5
0.9
53.0
1.0
89.8
51.7
1.5
71.7
45.7
1.9
59.7
40.4
2.0
56.9
38.9
2.5
43.5
31.5
3.0
30.6
23.4
4.0
6.8
6.7
5.0
6.08
-16.4
-36.6
-58.1
-78.8
-96.3
-110.8
-124.3
-140.1
-157.3
-173.3
172.1
158.0
145.5
133.3
117.9
101.5
-11.0
-26.8
-44.8
-62.4
-77.6
-90.2
-102.4
-117.1
-133.6
-149.3
-163.8
-178.2
168.9
156.1
140.1
122.9
6.0
4.16
72.6
7.0
78.9
2.44
52.9
8.0
58.3
0.76
35.8
9.0
44.0
-0.83
-2.11
-3.05
-3.78
-4.84
-5.93
-6.84
-7.46
-8.01
-8.44
-8.95
-10.1
21.8
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
40.1
11.8
39.6
3.2
32.9
-6.6
16.4
-17.2
-23.8
-32.8
-44.7
-54.5
-54.9
-57.9
-66.1
0.6
-1.0
5.2
11.2
4.6
-12.7
-29.3
RFout
RFin
reference plane
reference plane
[5]
[6]
[7]
[8]
[16]
[15]
[14]
[13]
Figure 32.
11
Typical Noise Parameters, Vdd=5V, Idd=50mA
Part Number Ordering Information
Fmin
dB
ꢄ
ꢄ
Part Number
No. of Devices Container
opt
opt
Freq
GHz
MGA-16516-BLKG
MGA-16516-TR1G
100
Antistatic Bag
Tape/reel
Mag.
0.35
0.30
0.25
0.26
0.25
0.21
0.17
0.23
0.26
Ang.
R
n/50
3000
0.5
0.7
0.9
1.7
1.85
2.0
2.4
2.6
3.5
0.32
0.32
0.33
0.40
0.42
0.45
0.52
0.56
0.69
-23.36
-5.38
0.049
0.047
0.061
0.053
0.047
0.039
0.040
0.034
0.035
1.05
24.96
36.84
95.96
113.99
134.72
172.14
Notes:
1. The Fmin values are based on noise figure measurements at 100
different impedances using Focus source pull test system. From
these measurements a true Fmin is calculated.
2. Scattering and noise parameters are measured on 0.010 inch thick
ROGER 4350. The input reference plane is at the end of the RFin pin
and the output reference plane is at the end of the RFout pin as
shown in Figure 32.
3. S2P file with scattering and noise parameters for biasing 3V 50mA,
3.5V 50mA, 4V 50mA, 4.5V 50mA, 5V 40mA, 5V 50mA and 5V 60mA
are available upon request.
SLP4X4 Package Dimension
2.70 0.05
Exp.DAP
0.203 Ref.
PIN #1 IDENTIFICATION
CHAMFER 0.30 x 45º
Pin 1 Dot
by marking
4.00 0.10
0.40 0.05
16516
YYWW
XXXX
0.30 0.05
0.65 Bsc
2.70 0.05
Exp.DAP
4.00 0.10
1.95
Ref.
0.00 - 0.05
0.85 0.10
SIDE VIEW
BOTTOM VIEW
TOP VIEW
Notes:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold ash and metal burr.
12
PCB Land Pattern and Stencil Design
4.00
2.70
3.96
2.16
0.65
0.65
0.36
0.40
0.30
0.27
Stencil Opening
Land Pattern
2.70
2.16
0.65
0.36
0.40
0.27
0.30
Combination of Land Pattern & Stencil Opening
Notes:
1. All dimensions are in millimeters.
2. 4 mil stencil thickness recommended
13
Device Orientation
REEL
USER FEED DIRECTION
16ꢀ16
YYWW
XXXX
16ꢀ16
YYWW
XXXX
16ꢀ16
YYWW
XXXX
CARRIER
TAPE
USER
FEED
DIRECTION
TOP VIEW
END VIEW
COVER
TAPE
Tape Dimensions
∅ 1.ꢀ0 + .10
1.7ꢀ 0.10
8.0 0.10
4.0 0.10
2.00 0.0ꢀ
+
+
+
+
ꢀ.ꢀ0 .0ꢀ
12.00
+0.30/-0.10
∅ 1.ꢀ0 +0.2ꢀ
.279 0.02
10º MAX.
10º MAX.
1.13 0.10
Ko
4.2ꢀ 0.10
4.2ꢀ 0.10
Ao
Bo
14
Reel Dimension - 7 Inch
A
B
ØE
ØD
SIDE VIEW
F
FRONT VIEW
BACK VIEW
SPECIFICATION
TAPE
WIDTH
A
MAX
B
C1
0.5
ØD
0.5
ØE
(max)
F
ØG
0.2
ØH
(min)
+1.5–0.0
(min)
12mm
18.00
12.4
4.40
55.0
178
1.50
13.50
20.20
C1
TAPE SLOT
PLANE VIEW
Note: Surface resistivity to be <1012 Ohms/square
ARBOR HOLE
15
Reel Dimension - 13 Inch
ESD Label
(See Below)
RECYCLE SYMBOL
DETAIL “X”
EMBOSSED LINE X2
90.0mm length
LINES 147.0mm AWAY FROM CENTER POINT
EMBOSSED ‘M’ 5.0mm height
FRONT VIEW
11.90–15.40**
13.20 0.50*
Ø20.2 (MIN.)
RECYCLE SYMBOL
DETAIL “X”
+0.5
Ø13.0
–0.2
2.00 0.5
DETAIL “X”
SLOT 5.00 0.50
16.40”
MAX.
BACK VIEW
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2010 Avago Technologies. All rights reserved.
AV02-1980EN - August 13, 2010
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