MGA-68563-BLKG [AVAGO]
RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER;
| 型号： | MGA-68563-BLKG |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 放大器 射频 微波 功率放大器 |
| 文件： | 总18页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MGA-68563
Current-Adjustable, Low Noise Amplifier
Data Sheet
Description
Features
Avago Technologies MGA-68563 is an economical, easy-
to-use GaAs MMIC amplifier that offers excellent linearity
and low noise figure for applications from 0.1 to 1.5 GHz.
ꢁ Single +3V supply
ꢁ High linearity
Packaged in an miniature SOT-363 package, it requires ꢁ Low noise figure
half the board space of a SOT-143 package.
ꢁ Miniature package
One external resistor is used to set the bias current from
5mA to 30mA. This allows the designer to use the same
part in several circuit positions and tailor the linearity
performance (and current consumption) to suit each
position.
ꢁ Unconditionally stable
Specifications at 500 MHz; 3V, 10 mA (Typ.)
ꢁ 1.0 dB noise figure
ꢁ 20 dBm OIP3
The output of the amplifier is matched to 50ꢀ (below
2:1 VSWR) across the entire bandwidth and only requires
minimum input matching. The amplifier allows a wide
dynamic range by offering a 1.0 dB NF coupled with a
+20 dBm Output IP3. The circuit uses state-of-the-art
E-pHEMT technology with proven reliability. On-chip bias
circuitry allows operation from a single +3V power sup-
ply, while internal feedback ensures stability (K>1) over
all frequencies for Id at 10mA and above.
ꢁ 19.7 dB gain
*
ThisrepresentswhatAvagoTechnologieshasmanaged
to achieve on a device level with trade off between
optimal NF, Gain, OIP3 and input return loss.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
Applications
ESD Human Body Model (CLass 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
ꢁ LNA for DVB-T,DVB-H, T-DMB, ISDB-T, DAB and Media-
FLO
Pin Connections and Package Marking
Simplified Schematic
Vd
Ibias
Id = Ids + Ibias
Rbias
Ids
Note:
Feedback
Package marking
provides orientation
and identification:
Vbias
OUTPUT
GND
GND
1
2
3
6
and V
d
4
Input
match
RFout
“6C” = Device Code
“x” = Date code
indicates the month
6
5 GND
4 BIAS
RFin
3
INPUT
of
manufac-
Bias
ture.
1, 2, 5
GND
[1]
MGA-68563 Absolute Maximum Ratings
Notes:
Absolute
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Bias is assumed at DC quiescent conditions.
3. With the DC (typical bias) and RF applied to
the device at board temperature TB = 25°C.
4. Total dissipation power is referred to lead
“5” temperature. Tc=92°C, derate Pdiss at
10.3mW/°C for Tc>92°C.
Symbol
Vd
Parameter
Device Voltage (pin 6) [2]
Device Current (pin 6) [2]
Units
Maximum
V
6
Id
mA
100
Pin
CW RF Input (pin3)
(Vd=3V, Id=10mA) [3]
(Vd=0V, Id=0mA)
dBm
dBm
21
21
5. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
Iref
Bias Reference Current (pin 4)
Total Power Dissipation [4]
Channel Temperature
mA
mW
°C
1
Pdiss
TCH
600
150
150
97
TSTG
θch_b
Storage Temperature
Thermal Resistance [5]
°C
°C/W
Wire Supplying
Vbias from
Agilent 4142
+
10 nF
68 pF
3V
Blocking
Cap
RF
Input
47 nH
Direct to
Ground
4300 Ω
Direct to
Ground
4
Bias
6.8 nH
RF Output
Tee
MGA-68563
3
6
100 pF
100 pF
1 2
5
Vdd supply from
Agilent 4142
Reference
Planes
Figure 1a. Test circuit of the 0.5 GHz production test board used for NF, Gain
and OIP3 measurements. This circuit achieves a trade-off between optimal
NF, Gain, OIP3 and input return loss. Circuit losses have been de-embedded
from actual measurements.
Figure 1b. A diagram showing the connection to the DUT during an S and
Noise parameter measurement using an automated tuner system.
2
MGA-68563 Electrical Specifications
T = 25ꢂC, Z = 50ꢀ, V = 3V (unless otherwise specified)
C
O
d
Symbol
Parameters and Test Conditions
Freq
Units
Min.
Typ.
11
Max.
16
Id[1,2]
Device Current
mA
[1,2]
NFtest
Noise Figure in test circuit[1]
f = 0.5 GHz dB
f = 0.5 GHz dB
f = 0.5 GHz dBm
1.0
1.4
[1,2]
Gtest
Associated Gain in test circuit [1]
Output 3rd Order Intercept in test circuit [1]
Output Power at 1dB Gain Compression in test circuit. [1]
18
18
19.7
20.7
dBm
21.5
[1,2]
[1,2]
OIP3testꢃ
P1dBtestꢃ
f = 0.5 GHz
17.5
Notes:
1. Guaranteed specifications are 100% tested in the production test circuit, the typical value is based on measurement of at least 600 parts from
two non-consecutive wafer lots during initial characterization of this product.
2. Circuit achieved a trade-off between optimal NF, Gain, OIP3 and input return loss.
LSL
LSL
CPK=2.13
USL
CPK=3.228
18
19
20
21
22
6
7
8
9 10 11 12 13 14 15 16 17
Figure 2. Id @ 3V.LSL=7, Nominal=11, USL=16
Figure 3, OIP3 @ 0.5GHz 3V. LSL=18, Nominal=20.7
USL
LSL
USL
CPK=1.62
CPK=2.276
.7 .8 .9
1
1.1 1.2 1.3 1.4 1.5
18 18.5 19 19.5 20 20.5 21 21.5 22
Figure 4. NF @ 0.5GHz 3V.USL=1.4, Nominal=1.0
Figure 5. Gain @ 0.5GHz 3V.USL=18, Nominal=19.7, USL=21.5
Note:
Measured on the production circuit.
Distribution data sample size is 600 samples taken from 2 non-consecutive wafer lots. Future wafers allocated to this product may have nominal
values anywhere between upper and lower limits.
3
35000
30000
25000
20000
15000
10000
5000
0
3V Supply
5V Supply
0
2
4
6
8
10
12
14
16
18
20
Id (mA)
Figure 6. Rbias vs Id (3V Supply and 5V Supply)
MGA-68563 Typical Performance, Vd = 3V, Ids (q) = 5mA at 50ohm Input and Output
22
20
18
16
14
26
24
22
20
18
16
14
12
10
8
-40°C
85°C
25°C
-40°C
85°C
25°C
0
0.5
1
1.5
2
0
0.5
1
1.5
2
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. P1dB vs. Frequency (3V,5mA), Ids=5mA during small signal, i.e.
Pin=-20dBm)
Figure 8. OIP3 vs. Frequency (3V 5mA)
3
2.5
2
18
-40°C
25°C
85°C
-40°C
25°C
85°C
16
14
12
10
8
1.5
1
0.5
0
6
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 9. Gain vs. Frequency (3V 5mA)
Figure 10. NF vs. Frequency (3V 5mA)
Notes:
1. Ids taken @ ambient temperature of 25ꢂC may change with temperature variation.
2. Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
4
MGA-68563 Typical Performance, Vd = 3V, Ids (q) = 10mA at 50ohm Input and Output
22
26
-40°C
85°C
25°C
24
-40°C
85°C
25°C
22
20
18
16
14
12
10
8
20
18
16
14
0
0.5
1
1.5
2
0
0.5
1
1.5
2
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 11. P1dB vs. Frequency (3V,10mA), Ids=10mA during small signal,
i.e. Pin=-20dBm)
Figure 12. OIP3 vs. Frequency (3V 10mA)
22
3
2.5
2
-40°C
25°C
85°C
20
-40°C
25°C
85°C
18
16
14
12
10
8
1.5
1
0.5
0
6
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 13. Gain vs. Frequency (3V 10mA)
Figure 14. NF vs. Frequency (3V 10mA)
Notes:
1. Ids taken @ ambient temperature of 25ꢂC may change with temperature variation.
2. Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
5
MGA-68563 Typical Performance, Vd = 3V, Ids (q) = 15mA at 50ohm Input and Output
26
22
-40°C
85°C
25°C
-40°C
85°C
25°C
24
20
18
16
14
22
20
18
16
14
0
0.5
1
1.5
2
0
0.5
1
1.5
2
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 15. P1dB vs. Frequency (3V,15mA), Ids=15mA during small signal,
i.e. Pin=-20dBm)
Figure 16. OIP3 vs. Frequency (3V 15mA)
22
3
2.5
2
-40°C
25°C
85°C
-40°C
25°C
85°C
20
18
16
14
12
10
8
1.5
1
0.5
0
6
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 17. Gain vs. Frequency (3V 15mA)
Figure 18. NF vs. Frequency (3V 15mA)
Notes:
1. Ids taken @ ambient temperature of 25ꢂC may change with temperature variation.
2. Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
6
MGA-68563 Typical Performance, Vd = 5V, Ids (q) = 5mA at 50ohm Input and Output
26
28
24
-40°C
85°C
25°C
-40°C
85°C
25°C
26
22
20
18
16
14
12
10
8
24
22
20
18
16
14
0
0.5
1
1.5
2
0
0.5
1
1.5
2
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 19. P1dB vs. Frequency (5V,5mA), Ids=5mA during small signal, i.e.
Pin=-20dBm)
Figure 20. OIP3 vs. Frequency (5V 5mA)
18
4
3.5
3
-40°C
25°C
85°C
-40°C
25°C
85°C
16
14
12
10
8
2.5
2
1.5
1
0.5
0
6
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 21. Gain vs. Frequency (5V 5mA)
Figure 22. NF vs. Frequency (5V 5mA)
Notes:
1. Ids taken @ ambient temperature of 25ꢂC may change with temperature variation.
2. Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
7
MGA-68563 Typical Performance, Vd = 5V, Ids (q) = 10mA at 50ohm Input and Output
28
26
24
22
20
18
16
14
26
24
22
20
18
16
14
12
10
8
-40°C
85°C
25°C
-40°C
85°C
25°C
0
0.5
1
1.5
2
0
0.5
1
1.5
2
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 23. P1dB vs. Frequency (5V,10mA), Ids=10mA during small signal,
i.e. Pin=-20dBm)
Figure 24. OIP3 vs. Frequency (5V 10mA)
3
2.5
2
22
-40°C
25°C
85°C
-40°C
25°C
85°C
20
18
16
14
12
10
8
1.5
1
0.5
0
6
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 26. NF vs. Frequency (5V 10mA)
Figure 25. Gain vs. Frequency (5V 10mA)
Notes:
1. Ids taken @ ambient temperature of 25ꢂC may change with temperature variation.
2. Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
8
MGA-68563 Typical Performance, Vd = 5V, Ids (q) = 15mA at 50ohm Input and Output
26
24
22
20
18
16
14
28
26
24
22
20
18
16
14
-40°C
85°C
25°C
-40°C
85°C
25°C
0
0.5
1
1.5
2
0
0.5
1
1.5
2
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 27. P1dB vs. Frequency (5V,15mA), Ids=15mA during small signal,
i.e. Pin=-20dBm)
Figure 28. OIP3 vs. Frequency (5V 15mA)
22
3
2.5
2
-40°C
25°C
85°C
20
-40°C
25°C
85°C
18
16
14
12
10
8
1.5
1
0.5
0
6
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 29. Gain vs. Frequency (5V 15mA)
Figure 30. NF vs. Frequency (5V 15mA)
Notes:
1. Ids taken @ ambient temperature of 25ꢂC may change with temperature variation.
2. Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
9
MGA-68563 Typical Performance, Freq = 0.5GHz, Tc = 25ꢂC at 50ohm Input and Output
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
3V
5V
3V
5V
0
20
40
60
80
100
0
20
40
60
80
100
Id (mA)
Id (mA)
Figure 31. P1dB vs. Id (500MHz), Id at small signal, i.e. Pin=-20dBm)
Figure 32. OIP3 vs. Id (500 MHz)
35
2
3V
5V
3V
5V
30
1.5
1
25
20
15
10
5
0.5
0
0
0
20
40
60
80
100
0
20
40
60
80
100
Id (mA)
Id (mA)
Figure 33. Gain vs. Id (500 MHz)
Figure 34. NF vs. Id (500 MHz)
Notes:
1. Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
10
MGA-68563 Typical Performance, Freq = 0.1GHz, Tc = 25ꢂC at 50ohm Input and Output
50
45
40
35
30
25
20
15
10
30
25
20
15
10
5
3V
5V
3V
5V
0
20
40
60
80
100
0
20
40
60
80
100
Id (mA)
Id (mA)
Figure 35. P1dB vs. Id (100MHz), Id at small signal, i.e. Pin=-20dBm)
Figure 36. OIP3 vs. Id (100 MHz)
3
35
3V
5V
3V
5V
30
2.5
2
25
20
15
10
5
1.5
1
0.5
0
0
0
20
40
60
80
100
0
20
40
60
80
100
Id (mA)
Id (mA)
Figure 37. Gain vs. Id (500 MHz)
Figure 38. NF vs. Id (500 MHz)
Notes:
1. Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
11
MGA-68563 Typical Performance, Freq = 0.5GHz, Ids(q) = 10mA, Tc=25°C at 50ohm Input and Output
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Pout (dBm)
Figure 39. Ids vs. Pout (Vd = 3V)
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Pout (dBm)
Figure 40. Ids vs. Pout (Vd = 5V)
Notes:
1. Bias current (Ids = 10mA) for the above charts are quiescent conditions.
12
MGA-68563 Typical Scattering Parameters, Tc = 25ꢂC, Zo = 50ohm, Vd = 3V, Ids = 10mA
Freq.
GHz
0.3
0.5
0.7
0.9
1.0
1.1
1.3
1.5
1.7
1.9
2.0
2.5
3.0
3.5
4.0
S11
S21
S12
S22
Mag.
0.42
0.36
0.38
0.40
0.41
0.42
0.44
0.45
0.47
0.48
0.49
0.51
0.50
0.50
0.51
Ang.
dB
Mag.
9.18
8.72
8.09
7.44
7.14
6.84
6.31
5.86
5.44
5.06
4.90
4.20
3.60
3.21
3.07
Ang.
158.40
145.00
133.90
123.90
119.30
115.00
106.80
99.40
92.30
85.60
82.50
67.00
53.80
41.80
25.20
Mag.
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.09
0.09
0.11
Ang.
5.40
3.80
3.90
4.10
4.10
4.20
4.40
4.50
4.60
4.60
4.60
3.10
2.00
0.30
-8.60
Mag.
0.27
0.19
0.19
0.18
0.17
0.17
0.16
0.17
0.16
0.15
0.15
0.14
0.15
0.15
0.08
Ang.
K-factor
1.01
1.04
1.02
1.03
1.03
1.04
1.04
1.06
1.08
1.11
1.11
1.16
1.28
1.35
1.29
-37.10
-57.20
-76.30
-92.50
-99.70
-106.70
-119.50
-132.30
-141.10
-150.50
-154.60
-176.40
160.80
142.70
126.90
19.26
18.81
18.16
17.43
17.07
16.70
16.00
15.36
14.71
14.09
13.81
12.46
11.13
10.13
9.74
-32.20
-47.50
-63.10
-75.80
-81.80
-86.30
-95.10
-98.30
-107.70
-115.30
-116.20
-131.90
-153.10
-176.10
162.40
Typical Noise Parameters at 25ꢂC,
Tc = 25ꢂC, Zo = 50ohm, Vd = 3V, Ids = 10mA
Freq.
GHz
0.5
1.0
1.5
2.0
2.5
3.0
Fmin
dB
ꢄ
opt
NF@50
dB
ꢀ
Mag.
0.12
0.05
0.16
0.21
0.24
0.26
Ang.
Rn/50
0.83
0.74
0.76
0.88
1.05
1.24
108.80
109.80
151.40
147.90
161.50
-173.10
0.11
0.08
0.07
0.07
0.06
0.09
0.85
0.74
0.80
0.94
1.12
1.31
13
MGA-68563 Typical Scattering Parameters, Tc = 25ꢂC, Zo = 50ohm, Vd = 3V, Ids = 5mA
Freq.
GHz
0.3
0.5
0.7
0.9
1.0
1.1
1.3
1.5
1.7
1.9
2.0
2.5
3.0
3.5
4.0
S11
S21
Mag.
6.77
6.54
6.15
5.72
5.53
5.33
4.97
4.66
4.38
4.11
3.99
3.49
3.02
2.71
2.62
S12
S22
Mag.
0.54
0.47
0.48
0.48
0.48
0.49
0.50
0.50
0.52
0.52
0.53
0.55
0.53
0.51
0.53
Ang.
dB
Ang.
Mag.
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.10
0.10
0.10
0.11
Ang.
6.50
Mag.
0.43
0.35
0.33
0.31
0.30
0.29
0.28
0.28
0.25
0.24
0.23
0.21
0.20
0.18
0.12
Ang.
K-factor
1.01
1.02
1.00
0.98
0.98
0.98
0.98
0.98
0.98
1.01
1.02
1.07
1.23
1.35
1.32
-28.80
-44.40
-60.80
-75.60
-82.30
-89.20
-102.00
-114.50
-124.30
-134.20
-138.60
-162.10
173.50
153.90
137.40
16.61
16.31
15.77
15.15
14.85
14.53
13.93
13.37
12.82
12.27
12.03
10.86
9.61
160.50
147.20
136.80
127.10
122.60
118.40
110.30
102.90
95.80
-24.60
-36.80
-49.10
-59.50
-64.30
-68.50
-76.00
-81.10
-88.20
-94.80
-96.00
-110.40
-127.80
-146.80
-153.40
4.20
4.00
3.60
3.10
2.80
2.00
1.10
0.10
88.90
-1.10
-1.50
-5.30
-8.00
-10.40
-18.20
85.70
69.70
55.60
8.67
42.90
8.38
26.70
Typical Noise Parameters at 25ꢂC,
Tc = 25ꢂC, Zo = 50ohm, Vd = 3V, Ids = 5mA
Freq.
GHz
0.5
1.0
1.5
2.0
2.5
3.0
Fmin
dB
ꢄopt
NF@50ꢀ
dB
Mag.
0.15
0.12
0.18
0.24
0.28
0.29
Ang.
97.70
Rn/50
1.21
1.01
1.04
1.07
1.20
1.41
0.14
0.11
0.11
0.09
0.08
0.10
1.25
1.03
1.10
1.17
1.33
1.50
62.80
114.20
123.90
141.00
162.20
14
MGA-68563 Typical Scattering Parameters, Tc = 25ꢂC, Zo = 50ohm, Vd = 3V, Ids = 15mA
Freq.
GHz
0.3
0.5
0.7
0.9
1.0
1.1
1.3
1.5
1.7
1.9
2.0
2.5
3.0
3.5
4.0
S11
S21
Mag.
10.64
9.99
9.20
8.41
8.03
7.68
7.04
6.50
6.00
5.56
5.38
4.56
3.90
3.47
3.29
S12
S22
Mag.
0.35
0.30
0.33
0.36
0.37
0.39
0.41
0.43
0.46
0.46
0.47
0.50
0.50
0.50
0.50
Ang.
-43.60
dB
Ang.
157.30
143.70
132.40
122.20
117.60
113.20
105.00
97.60
90.70
84.00
81.00
65.80
53.00
41.40
24.70
Mag.
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.08
0.08
0.09
0.11
Ang.
5.00
3.90
4.40
5.30
5.60
6.10
7.10
7.90
8.60
9.10
9.30
8.70
7.90
5.90
-3.90
Mag.
0.18
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.11
0.12
0.14
0.15
0.09
Ang.
-41.30
K-factor
1.01
1.04
1.05
1.06
1.07
1.07
1.10
1.12
1.13
1.17
1.16
1.20
1.30
1.33
1.27
20.54
19.99
19.27
18.49
18.10
17.70
16.95
16.26
15.57
14.91
14.61
13.19
11.82
10.80
10.35
-67.40
-64.30
-87.40
-82.80
-103.80
-110.90
-117.60
-129.90
-142.10
-150.20
-159.10
-162.90
176.50
154.70
137.50
122.10
-96.80
-103.50
-107.50
-116.50
-116.30
-127.30
-134.70
-135.30
-149.80
-170.30
167.50
137.50
Typical Noise Parameters at 25ꢂC,
Tc = 25ꢂC, Zo = 50ohm, Vd = 3V, Ids = 15mA
Freq.
GHz
0.5
1.0
1.5
2.0
2.5
3.0
Fmin
dB
ꢄ
opt
NF@50
dB
ꢀ
Mag.
0.10
0.06
0.13
0.21
0.22
0.25
Ang.
Rn/50
0.65
0.55
0.59
0.81
0.99
1.17
119.90
158.20
163.00
160.60
172.00
-163.70
0.09
0.07
0.07
0.06
0.06
0.09
0.66
0.56
0.62
0.86
1.05
1.22
15
SOT-363/SC-70 (JEDEC DFP-N) Package Dimensions
Dimensions
Symbol
Min (mm)
1.15
Max (mm)
1.35
E
D
1.80
2.25
HE
A
1.80
2.40
0.80
1.10
A2
A1
e
0.80
1.00
0.00
0.10
0.650 BCS
0.15
0.650 BCS
0.30
b
c
0.08
0.25
L
0.26
0.46
Recommended PCB Pad Layout for Avago Technologies SC70 6L/SOT-363 Products
(dimensions in inches)
16
Device Orientation
REEL
TOP VIEW
4 mm
END VIEW
8 mm
CARRIER
TAPE
6Cx
6Cx
6Cx
6Cx
USER
FEED
DIRECTION
(Package marking example orientation shown.)
COVER TAPE
Tape Dimensions
P
2
P
D
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
10¡ MAX.
10¡ MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
2.40 0.10
2.40 0.10
1.20 0.10
4.00 0.10
1.00 + 0.25
0.094 0.004
0.094 0.004
0.047 0.004
0.157 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
P
E
1.50 0.10
4.00 0.10
1.75 0.10
0.061 0.002
0.157 0.004
0.069 0.004
CARRIER TAPE WIDTH
THICKNESS
W
8.00 0.30 ꢀ 0.10 0.315 0.012
t
0.254 0.02
0.010 0.0005
1
COVER TAPE
WIDTH
C
5.40 0.10
0.205 0.004
TAPE THICKNESS
T
0.062 0.001 0.0025 0.00004
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 0.05
0.079 0.002
17
Ordering Information
Part No.
No. of Devices
3000
Container
7”Reel
MGA-68563-TR1G
MGA-68563-TR2G
MGA-68563-BLKG
10000
13”Reel
100
antistatic bag
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved. Obsoletes AV01-0474EN
AV02-0654EN - April 4, 2011
相关型号：
MGA-685T6-TR1G
100MHz - 1500MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 2 X 1.30 MM, 0.40 MM HEIGHT, MINIATURE, UTSLP-6
AVAGO
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