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MSA-0470

更新时间：2025-07-13 07:37:47

品牌：AVAGO

描述：Cascadable Silicon Bipolar MMIC Amplifier

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概述
规格参数
数据手册

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MSA-0470 概述

Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大器射频/微波放大器

MSA-0470 规格参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	SL,4LEAD,.07SQ	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.33.00.01
风险等级：	5.15	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	7.5 dB
最大输入功率 (CW)：	13 dBm	JESD-609代码：	e4
安装特点：	SURFACE MOUNT	端子数量：	4
最大工作频率：	4000 MHz	最小工作频率：
封装主体材料：	CERAMIC	封装等效代码：	SL,4LEAD,.07SQ
电源：	5.25 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	70 mA
表面贴装：	YES	技术：	BIPOLAR
端子面层：	Gold (Au)	最大电压驻波比：	2
Base Number Matches：	1

MSA-0470 数据手册

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MSA-0470

Cascadable Silicon Bipolar MMIC Ampliﬁer

Data Sheet

Description

Features

Theꢀ MSA-0470ꢀ isꢀ aꢀ highꢀ performanceꢀ siliconꢀ bipolarꢀ

MonolithicꢀMicrowaveꢀIntegratedꢀCircuitꢀ(MMIC)ꢀhousedꢀ

inꢀ aꢀ hermetic,ꢀ highꢀ reliabilityꢀ package.ꢀ Thisꢀ MMICꢀ isꢀ

designedꢀforꢀuseꢀasꢀaꢀgeneralꢀpurposeꢀ50Ωꢀgainꢀblock.ꢀ

TypicalꢀapplicationsꢀincludeꢀnarrowꢀandꢀbroadꢀbandꢀIFꢀ

andꢀRFꢀampliﬁersꢀinꢀindustrialꢀandꢀmilitaryꢀapplications.

•ꢀ Cascadableꢀ50ΩꢀGainꢀBlock

•ꢀ 3ꢀdBꢀBandwidth:ꢀꢀDCꢀtoꢀ4.0ꢀGHz

•ꢀ 12.5ꢀdBmꢀTypicalꢀP1ꢀdBꢀatꢀ1.0ꢀGHz

•ꢀ 8.5ꢀdBꢀTypicalꢀGainꢀatꢀ1.0ꢀGHz

•ꢀ UnconditionallyꢀStableꢀ(k>1)

Theꢀ MSA-seriesꢀ isꢀ fabricatedꢀ usingꢀ Avago’sꢀ 10ꢀ GHzꢀ f_T,ꢀ

25ꢀGHzꢀ f_MAX,ꢀ siliconꢀ bipolarꢀ MMICꢀ processꢀ whichꢀ usesꢀ

nitrideꢀself-alignment,ꢀionꢀimplantation,ꢀandꢀgoldꢀmetal-

lizationꢀtoꢀachieveꢀexcellentꢀperformance,ꢀuniformityꢀandꢀ

reliability.ꢀTheꢀuseꢀofꢀanꢀexternalꢀbiasꢀresistorꢀforꢀtemper-

atureꢀandꢀcurrentꢀstabilityꢀalsoꢀallowsꢀbiasꢀﬂexibility.

•ꢀ HermeticꢀGold-ceramicꢀMicrostripꢀPackage

70 mil Package

Typical Biasing Conﬁguration

bias

V_CC> 7 V

RFC (Optional)

block

MSA

OUT

= 5.25 V

MSA-0470 Absolute Maximum Ratings

[2,4]

[1]

ThermalꢀResistance :ꢀ

θ_jc= 115°C/W

Parameterꢀ

AbsoluteꢀMaximum

Device Current

100 mA

650 mW

[2,3]

Power Dissipation

RF Input Power

Junction Temperature

Storage Temperature

+13 dBm

200°C

–65 to 200°C

Notes:

1.ꢀ Permanentꢀdamageꢀmayꢀoccurꢀifꢀanyꢀofꢀtheseꢀlimitsꢀareꢀexceeded.

2.ꢀ T_CASEꢀꢀ=ꢀ25°C.

3.ꢀ Derateꢀatꢀ8.7ꢀmW/°CꢀforꢀT_Cꢀ>ꢀ125°C.

4.ꢀ Theꢀsmallꢀspotꢀsizeꢀofꢀthisꢀtechniqueꢀresultsꢀinꢀaꢀhigher,ꢀthoughꢀmoreꢀaccurateꢀdeterminationꢀ

ofꢀθ_jcꢀthanꢀdoꢀalternateꢀmethods.

[1]

Electrical Speciﬁcations , T_A= 25°C

Symbolꢀ

ParametersꢀandꢀTestꢀConditions:ꢀI_dꢀ=ꢀ50ꢀmA,ꢀZ_Oꢀ=ꢀ50ꢀΩꢀ

Unitsꢀ Min.ꢀ

Typ.ꢀ Max.

8.5 9.5

0.6 1.0

G_P

Power Gain (|S₂₁| )

Gain Flatness

f = 0.1 GHz

7.5

∆G_P

f_{3 dB}

f = 0.1 to 2.5 GHz

3 dB Bandwidth

GHz

4.0

1.7:1

2.0:1

6.5

Input VSWR

f = 0.1 to 2.5 GHz

f = 1.0 GHz

VSWR

Output VSWR

50 Ω Noise Figure

dBm

psec

P_{1 dB}

IP₃

Output Power at 1 dB Gain Compression

Third Order Intercept Point

Group Delay

f = 1.0 GHz

12.5

25.5

125

f = 1.0 GHz

t_D

f = 1.0 GHz

V_d

Device Voltage

4.75

5.25

–8.0

5.75

dV/dT

Device Voltage Temperature Coeﬃcient

mV/°C

Note:

1.ꢀ Theꢀrecommendedꢀoperatingꢀcurrentꢀrangeꢀforꢀthisꢀdeviceꢀisꢀ30ꢀtoꢀ70ꢀmA.ꢀꢀ

Typicalꢀperformanceꢀasꢀaꢀfunctionꢀofꢀcurrentꢀisꢀonꢀtheꢀfollowingꢀpage.

ꢀ

MSA-0470 Typical Scattering Parameters (Z_O= 50 Ω, T_A= 25°C, I_d= 50 mA)

ꢀ

Freq.ꢀ

GHzꢀ

S₁₁ꢀ

S_21ꢀ

Magꢀ

S_{12ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ}

Magꢀ

S₂₂

ꢀ

Magꢀ

Angꢀ

dBꢀ

Angꢀ

dBꢀ

Angꢀ

Magꢀ

Ang

ꢀ

0.1

0.2

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

.18

.17

.16

.21

.26

.32

.37

.40

.41

.42

179

8.5

8.4

8.3

8.2

7.8

7.3

6.5

5.7

4.7

3.9

3.1

2.67

2.65

2.64

2.61

2.56

2.46

2.33

2.12

1.93

1.73

1.57

1.44

176

172

163

155

147

138

117

–16.4

–16.2

–16.1

–15.9

–15.5

–14.6

–13.8

–13.5

–13.2

–12.6

–12.4

–11.9

.151

.152

.155

.158

.161

.169

.186

.204

.212

.220

.234

.239

.255

–1

–6

.10

.13

.16

.19

.22

.29

.33

.36

.40

.39

.37

–14

–30

–50

–67

–79

–179

–176

–174

–166

–163

–162

–170

–177

175

–90

–111

–131

–142

–156

–164

–170

–173

–176

166

155

Typical Performance, T_A= 25°C (unlessꢀotherwiseꢀnoted)

= +125C

= +25C

= –55C

Gain Flat to DC

0.1

0.3 0.5

1.0

3.0 6.0

FREQUENCY (GHz)

(V)

Figureꢀ2.ꢀꢀDeviceꢀCurrentꢀvs.ꢀVoltage.

Figureꢀ1.ꢀꢀTypicalꢀPowerꢀGainꢀvs.ꢀFrequency,ꢀT ꢀ=ꢀ25°C,ꢀI ꢀ=ꢀ50ꢀmA.

1 dB

0.1 GHz

1.0 GHz

2.0 GHz

(mA)

–55 –25

+25

+85

+125

TEMPERATURE (C)

Figureꢀ4.ꢀꢀOutputꢀPowerꢀatꢀ1ꢀdBꢀGainꢀCompression,ꢀNFꢀandꢀ

PowerꢀGainꢀvs.ꢀCaseꢀTemperature,ꢀfꢀ=ꢀ1.0ꢀGHz,ꢀI = 50 mA.

Figureꢀ3.ꢀꢀPowerꢀGainꢀvs.ꢀCurrent.

Typical Performance, T_A= 25°C (unlessꢀotherwiseꢀnoted)

7.5

7.0

= 70 mA

6.5

6.0

5.5

= 50 mA

= 30 mA

= 50 mA

= 70 mA

0.1

0.2 0.3 0.5

1.0

2.0

0.1

0.2 0.3 0.5

1.0

2.0

4.0

FREQUENCY (GHz)

Figureꢀ5.ꢀꢀOutputꢀPowerꢀatꢀ1ꢀdBꢀGainꢀCompressionꢀvs.ꢀFrequency.

Figureꢀ6.ꢀꢀNoiseꢀFigureꢀvs.ꢀFrequency.

Ordering Information

PartꢀNumbersꢀ

No.ꢀofꢀDevicesꢀ

Comments

MSA-0470

100

Bulk

ꢀ

70 mil Package Dimensions

.040

1.02

GROUND

.020

.508

RF OUTPUT

AND BIAS

RF INPUT

Notes:

(unless otherwise specified)

GROUND

1. Dimensions are

2. Tolerances

in .xxx = ± 0.005

mm .xx = ± 0.13

.070

1.78

.004 ± .002

.10 ± .05

.495 ± .030

12.57 ± .76

.035

.89

For product information and a complete list of distributors, please go to our web site: www.avagotech.com

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.

AV02-1226EN - May 14, 2008

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