MSA-0470 [AVAGO]

MSA-0470

Cascadable Silicon Bipolar MMIC Amplifier

Data Sheet

Description

The MSA-0470 is a high performance silicon bipolar

Monolithic Microwave Integrated Circuit (MMIC) housed

in a hermetic, high reliability package. This MMIC is

designed for use as a general purpose 50Ω gain block.

Typical applications include narrow and broad band IF

and RF amplifiers in industrial and military applications.

Features

•

Cascadable 50Ω Gain Block

•

3 dB Bandwidth: DC to 4.0 GHz

•

12.5 dBm Typical P1 dB at 1.0 GHz

•

8.5 dB Typical Gain at 1.0 GHz

•

Unconditionally Stable (k>1)

The MSA-series is fabricated using Avago’s 10 GHz f

T

,

•

Hermetic Gold-ceramic Microstrip Package

25 GHz f

MAX

, silicon bipolar MMIC process which uses

nitride self-alignment, ion implantation, and gold metal-

lization to achieve excellent performance, uniformity and

reliability. The use of an external bias resistor for temper-

ature and current stability also allows bias flexibility.

70 mil Package

Typical Biasing Configuration

R

bias

V

CC

> 7 V

RFC (Optional)

C

block

IN

1

4

3

MSA

C

block

OUT

V

d

= 5.25 V

2

MSA-0470 Absolute Maximum Ratings

Parameter

Device Current

Power Dissipation

[2,3]

RF Input Power

Junction Temperature

Storage Temperature

Absolute Maximum

[1]

100 mA

650 mW

+13 dBm

200°C

–65 to 200°C

Thermal Resistance

[2,4]

:

θ

jc

= 115°C/W

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

CASE

= 25°C.

3. Derate at 8.7 mW/°C for T

C

> 125°C.

4. The small spot size of this technique results in a higher, though more accurate determination

of θ

jc

than do alternate methods.

Electrical Specifications

[1]

, T

A

= 25°C

Symbol

G

P

∆G

P

f

3 dB

VSWR

NF

P

1 dB

IP

3

t

D

V

d

dV/dT

Parameters and Test Conditions: I

d

= 50 mA, Z

O

= 50 Ω

Power Gain (|S

21

|

2

)

Gain Flatness

3 dB Bandwidth

Input VSWR

Output VSWR

50 Ω Noise Figure

Output Power at 1 dB Gain Compression

Third Order Intercept Point

Group Delay

Device Voltage

Device Voltage Temperature Coefficient

f = 0.1 GHz

f = 0.1 to 2.5 GHz

f = 0.1 to 2.5 GHz

f = 0.1 to 2.5 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

dB

dBm

dBm

psec

V

mV/°C

Units

dB

dB

GHz

Min.

7.5

Typ.

8.5

±0.6

4.0

1.7:1

2.0:1

6.5

12.5

25.5

125

5.25

–8.0

Max.

9.5

±1.0

4.75

5.75

Note:

1. The recommended operating current range for this device is 30 to 70 mA.

Typical performance as a function of current is on the following page.

2

MSA-0470 Typical Scattering Parameters (Z

O

= 50 Ω, T

A

= 25°C, I

d

= 50 mA)

Freq.

GHz

0.1

0.2

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Mag

.18

.18

.18

.17

.16

.16

.16

.21

.26

.32

.37

.40

.41

.42

S

11

Ang

179

179

179

–179

–176

–174

–166

–163

–162

–170

–177

175

166

155

dB

8.5

8.5

8.5

8.5

8.4

8.3

8.2

7.8

7.3

6.5

5.7

4.7

3.9

3.1

S

21

Mag

2.67

2.67

2.67

2.65

2.64

2.61

2.56

2.46

2.33

2.12

1.93

1.73

1.57

1.44

Ang

176

172

163

155

147

138

117

97

83

65

38

33

20

7

dB

–16.4

–16.4

–16.4

–16.2

–16.1

–15.9

–15.5

–14.6

–13.8

–13.5

–13.2

–12.6

–12.4

–11.9

S

12

Mag

Ang

.151

.151

.152

.155

.158

.161

.169

.186

.204

.212

.220

.234

.239

.255

1

2

3

5

8

6

9

9

12

10

7

3

–1

–6

Mag

.10

.10

.13

.16

.19

.22

.29

.33

.36

.40

.40

.40

.39

.37

S

22

Ang

–14

–30

–50

–67

–79

–90

–111

–131

–142

–156

–164

–170

–173

–176

Typical Performance, T

A

= 25°C

(unless otherwise noted)

12

10

60

G

p

(dB)

8

6

4

20

2

0

0

I

d

(mA)

Gain Flat to DC

80

T

C

= +125C

T

C

= +25C

T

C

= –55C

40

0.1

0.3 0.5

1.0

3.0

6.0

1

2

3

4

V

d

(V)

5

6

7

FREQUENCY (GHz)

Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 50 mA.

9

Figure 2. Device Current vs. Voltage.

13

P

1 dB

(dBm)

12

11

10

9

P

1 dB

8

G

p

(dB)

7

6

G

p

(dB)

8

7

6

G

P

8

7

NF (dB)

5

0.1 GHz

1.0 GHz

2.0 GHz

20

30

40

50

I

d

(mA)

60

70

NF

–25

+25

+85

6

5

+125

4

5

–55

TEMPERATURE (C)

Figure 3. Power Gain vs. Current.

3

21

18

Figure 4. Output Power at 1 dB Gain Compression, NF and

Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 50 mA.

7.5

I

d

= 70 mA

7.0

2.0 GHz

4

20

30

40

50

I

d

(mA)

60

70

5

–55

–25

+25

+85

5

+125

TEMPERATURE (C)

Typical Performance, T

A

= 25°C

(unless otherwise noted)

21

18

P

1 dB

(dBm)

15

Figure 3. Power Gain vs. Current.

Figure 4. Output Power at 1 dB Gain Compression, NF and

Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 50 mA.

7.5

I

d

= 70 mA

NF (dB)

7.0

12

9

6

3

0.1

I

d

= 50 mA

6.5

I

d

= 30 mA

6.0

I

d

= 30 mA

I

d

= 50 mA

I

d

= 70 mA

0.1

0.2 0.3

0.5

1.0

2.0

5.5

0.2 0.3

0.5

1.0

2.0

4.0

FREQUENCY (GHz)

FREQUENCY (GHz)

Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.

Figure 6. Noise Figure vs. Frequency.

Ordering Information

Part Numbers

MSA-0470

No. of Devices

100

Comments

Bulk

70 mil Package Dimensions

.040

1.02

4

GROUND

.020

.508

RF INPUT

1

RF OUTPUT

AND BIAS

3

2

GROUND

.004

±

.002

.10

±

.05

.070

1.78

Notes:

(unless otherwise specified)

1. Dimensions are in

mm

2. Tolerances

in .xxx =

±

0.005

mm .xx =

±

0.13

.495

±

.030

12.57

±

.76

.035

.89

For product information and a complete list of distributors, please go to our web site:

www.avagotech.com

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.

Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2764EN

AV02-1226EN - May 14, 2008