MSA-0470 [AVAGO]

Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
MSA-0470
元器件型号: MSA-0470
生产厂家: AVAGO TECHNOLOGIES LIMITED    AVAGO TECHNOLOGIES LIMITED
描述和应用:

Cascadable Silicon Bipolar MMIC Amplifier
级联硅双极MMIC放大器

射频和微波射频放大器微波放大器
PDF文件: 总4页 (文件大小:181K)
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型号参数:MSA-0470参数
是否Rohs认证 符合
生命周期Obsolete
包装说明SL,4LEAD,.07SQ
Reach Compliance Codecompliant
ECCN代码EAR99
HTS代码8542.33.00.01
风险等级5.15
Is SamacsysN
其他特性HIGH RELIABILITY
特性阻抗50 Ω
构造COMPONENT
增益7.5 dB
最大输入功率 (CW)13 dBm
JESD-609代码e4
安装特点SURFACE MOUNT
端子数量4
最大工作频率4000 MHz
最小工作频率
封装主体材料CERAMIC
封装等效代码SL,4LEAD,.07SQ
电源5.25 V
射频/微波设备类型WIDE BAND LOW POWER
子类别RF/Microwave Amplifiers
最大压摆率70 mA
表面贴装YES
技术BIPOLAR
端子面层Gold (Au)
最大电压驻波比2
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
MSA-0470
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Description
The MSA-0470 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC) housed
in a hermetic, high reliability package. This MMIC is
designed for use as a general purpose 50Ω gain block.
Typical applications include narrow and broad band IF
and RF amplifiers in industrial and military applications.
Features
Cascadable 50Ω Gain Block
3 dB Bandwidth: DC to 4.0 GHz
12.5 dBm Typical P1 dB at 1.0 GHz
8.5 dB Typical Gain at 1.0 GHz
Unconditionally Stable (k>1)
The MSA-series is fabricated using Avago’s 10 GHz f
T
,
Hermetic Gold-ceramic Microstrip Package
25 GHz f
MAX
, silicon bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold metal-
lization to achieve excellent performance, uniformity and
reliability. The use of an external bias resistor for temper-
ature and current stability also allows bias flexibility.
70 mil Package
Typical Biasing Configuration
R
bias
V
CC
> 7 V
RFC (Optional)
C
block
IN
1
4
3
MSA
C
block
OUT
V
d
= 5.25 V
2
MSA-0470 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
100 mA
650 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 115°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 8.7 mW/°C for T
C
> 125°C.
4. The small spot size of this technique results in a higher, though more accurate determination
of θ
jc
than do alternate methods.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 50 mA, Z
O
= 50 Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50 Ω Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 GHz
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
dB
dBm
dBm
psec
V
mV/°C
Units
dB
dB
GHz
Min.
7.5
Typ.
8.5
±0.6
4.0
1.7:1
2.0:1
6.5
12.5
25.5
125
5.25
–8.0
Max.
9.5
±1.0
4.75
5.75
Note:
1. The recommended operating current range for this device is 30 to 70 mA.
Typical performance as a function of current is on the following page.
2
MSA-0470 Typical Scattering Parameters (Z
O
= 50 Ω, T
A
= 25°C, I
d
= 50 mA)
Freq.
GHz
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Mag
.18
.18
.18
.17
.16
.16
.16
.21
.26
.32
.37
.40
.41
.42
S
11
Ang
179
179
179
–179
–176
–174
–166
–163
–162
–170
–177
175
166
155
dB
8.5
8.5
8.5
8.5
8.4
8.3
8.2
7.8
7.3
6.5
5.7
4.7
3.9
3.1
S
21
Mag
2.67
2.67
2.67
2.65
2.64
2.61
2.56
2.46
2.33
2.12
1.93
1.73
1.57
1.44
Ang
176
172
163
155
147
138
117
97
83
65
38
33
20
7
dB
–16.4
–16.4
–16.4
–16.2
–16.1
–15.9
–15.5
–14.6
–13.8
–13.5
–13.2
–12.6
–12.4
–11.9
S
12
Mag
Ang
.151
.151
.152
.155
.158
.161
.169
.186
.204
.212
.220
.234
.239
.255
1
2
3
5
8
6
9
9
12
10
7
3
–1
–6
Mag
.10
.10
.13
.16
.19
.22
.29
.33
.36
.40
.40
.40
.39
.37
S
22
Ang
–14
–30
–50
–67
–79
–90
–111
–131
–142
–156
–164
–170
–173
–176
Typical Performance, T
A
= 25°C
(unless otherwise noted)
12
10
60
G
p
(dB)
8
6
4
20
2
0
0
I
d
(mA)
Gain Flat to DC
80
T
C
= +125C
T
C
= +25C
T
C
= –55C
40
0.1
0.3 0.5
1.0
3.0
6.0
1
2
3
4
V
d
(V)
5
6
7
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 50 mA.
9
Figure 2. Device Current vs. Voltage.
13
P
1 dB
(dBm)
12
11
10
9
P
1 dB
8
G
p
(dB)
7
6
G
p
(dB)
8
7
6
G
P
8
7
NF (dB)
5
0.1 GHz
1.0 GHz
2.0 GHz
20
30
40
50
I
d
(mA)
60
70
NF
–25
+25
+85
6
5
+125
4
5
–55
TEMPERATURE (C)
Figure 3. Power Gain vs. Current.
3
21
18
Figure 4. Output Power at 1 dB Gain Compression, NF and
Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 50 mA.
7.5
I
d
= 70 mA
7.0
2.0 GHz
4
20
30
40
50
I
d
(mA)
60
70
5
–55
–25
+25
+85
5
+125
TEMPERATURE (C)
Typical Performance, T
A
= 25°C
(unless otherwise noted)
21
18
P
1 dB
(dBm)
15
Figure 3. Power Gain vs. Current.
Figure 4. Output Power at 1 dB Gain Compression, NF and
Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 50 mA.
7.5
I
d
= 70 mA
NF (dB)
7.0
12
9
6
3
0.1
I
d
= 50 mA
6.5
I
d
= 30 mA
6.0
I
d
= 30 mA
I
d
= 50 mA
I
d
= 70 mA
0.1
0.2 0.3
0.5
1.0
2.0
5.5
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Ordering Information
Part Numbers
MSA-0470
No. of Devices
100
Comments
Bulk
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF INPUT
1
RF OUTPUT
AND BIAS
3
2
GROUND
.004
±
.002
.10
±
.05
.070
1.78
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
.495
±
.030
12.57
±
.76
.035
.89
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2764EN
AV02-1226EN - May 14, 2008
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