MMBT5551LT1 [AVICTEK]
SOT-23 Plastic-Encapsulate Transistors; SOT- 23塑封装晶体管
| 型号： | MMBT5551LT1 |
| 厂家： | 
Avic Technology |
| 描述： | SOT-23 Plastic-Encapsulate Transistors |
| 文件： | 总1页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
@vic SOT-23 Plastic-Encapsulate Transistors
MMBT5551LT1 TRANSISTOR (NPN)
SOT-23
1. BASE
FEATURES
2. EMITTER
3. COLLECTOR
Power dissipation
PCM:
0.3
W (Tamb=25℃)
2. 4
1. 3
Collector current
ICM:
0.6
A
Collector-base voltage
V(BR)CBO
:
180
V
Operating and storage junction temperature range
Unit: mm
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
180
160
6
V
V
Ic= 100µA, IE=0
Ic= 0.1mA, IB=0
V
IE= 100µA, IC=0
VCB=180V, IE=0
0.1
0.1
µA
µA
Emitter cut-off current
IEBO
VEB= 4V, IC=0
hFE(1)
VCE= 5V, IC= 1mA
VCE= 5V, IC=10mA
VCE= 5V, IC=50mA
IC=50 mA, IB= 5mA
IC= 50 mA, IB= 5mA
VCE=10V, IC= 10mA, f=100MHz
80
80
30
DC current gain
hFE(2)
250
hFE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
0.5
1
V
V
80
MHz
DEVICE MARKING
MMBT5551LT1=G1
相关型号：
©2020 ICPDF网 联系我们和版权申明