OPA658UB

更新时间:2024-09-18 01:58:14
品牌:BB
描述:Wideband, Low Power Current Feedback OPERATIONAL AMPLIFIER

OPA658UB 概述

Wideband, Low Power Current Feedback OPERATIONAL AMPLIFIER 宽带,低功耗电流反馈运算放大器 运算放大器

OPA658UB 规格参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SOP,Reach Compliance Code:unknown
风险等级:5.74Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIERJESD-30 代码:R-PDSO-G8
JESD-609代码:e0功能数量:1
端子数量:8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
子类别:Operational Amplifier表面贴装:YES
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

OPA658UB 数据手册

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®
OPA658  
OPA658  
OPA658  
Wideband, Low Power Current Feedback  
OPERATIONAL AMPLIFIER  
APPLICATIONS  
MEDICAL IMAGING  
FEATURES  
UNITY GAIN STABLE BANDWIDTH:  
900MHz  
HIGH-RESOLUTION VIDEO  
HIGH-SPEED SIGNAL PROCESSING  
COMMUNICATIONS  
LOW POWER: 50mW  
LOW DIFFERENTIAL GAIN/PHASE ERRORS:  
0.025%/0.02°  
PULSE AMPLIFIERS  
HIGH SLEW RATE: 1700V/µs  
ADC/DAC GAIN AMPLIFIER  
MONITOR PREAMPLIFIER  
CCD IMAGING AMPLIFIER  
GAIN FLATNESS: 0.1dB to 135MHz  
HIGH OUTPUT CURRENT (80mA)  
DESCRIPTION  
current make the OPA658 a perfect choice for numer-  
ous video, imaging and communications applications.  
The OPA658 is an ultra-wideband, low power current  
feedback video operational amplifier featuring high  
slew rate and low differential gain/phase error. The  
current feedback design allows for superior large sig-  
nal bandwidth, even at high gains. The low differential  
gain/phase errors, wide bandwidth and low quiescent  
The OPA658 is optimized for low gain operation and  
is also available in dual (OPA2658) and quad  
(OPA4658) configurations.  
+VS  
Current Mirror  
IBIAS  
In+  
In–  
VOUT  
Buffer  
CCOMP  
IBIAS  
Current Mirror  
–VS  
International Airport Industrial Park  
Mailing Address: PO Box 11400, Tucson, AZ 85734  
FAXLine: (800) 548-6133 (US/Canada Only)  
• Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111  
Internet: http://www.burr-brown.com/  
Cable: BBRCORP  
Telex: 066-6491  
FAX: (520) 889-1510  
Immediate Product Info: (800) 548-6132  
© 1994 Burr-Brown Corporation  
PDS-1268F  
Printed in U.S.A. March, 1998  
SPECIFICATIONS  
At TA = +25°C, VS = ±5V, RL = 100, and RFB = 402Ω, unless otherwise noted.  
OPA658P, U, N  
OPA658UB, NB  
PARAMETER  
CONDITION  
MIN  
TYP  
MAX  
MIN  
TYP  
MAX  
UNITS  
FREQUENCY RESPONSE  
(1)  
Closed-Loop Bandwidth(2)  
G = +1(4)  
G = +2  
G = +5  
900  
680  
370  
200  
1700  
1500  
15  
11.5  
6
68  
56  
40  
0.025  
0.02  
135(5)  
MHz  
MHz  
MHz  
MHz  
V/µs  
V/µs  
ns  
400  
G = +10  
Slew Rate(3)  
At Minimum Specified Temperature  
Settling Time: 0.01%  
G = +2, 2V Step  
1000  
900  
G = +2, 2V Step  
G = +2, 2V Step  
G = +2, 2V Step  
0.1%  
1%  
ns  
ns  
Spurious Free Dynamic Range  
f = 5MHz, G = +2, VO = 2Vp-p  
f = 20MHz, G= +2, VO = 2Vp-p  
f = 10MHz, 4dBm Each Tone  
G = +2, NTSC, VO = 1.4Vp-p, RL = 150Ω  
G = +2, NTSC, VO = 1.4Vp-p, RL = 150Ω  
G = +2  
dBc  
dBc  
dBm  
%
degrees  
MHz  
Third Order Intercept Point  
Differential Gain  
Differential Phase  
Bandwidth for 0.1dB Flatness  
OFFSET VOLTAGE  
Input Offset Voltage  
Over Temperature Range  
Power Supply Rejection Ratio  
VCM = 0V  
±3  
±5  
64  
±5.5  
±8  
±2  
±4  
67  
±4.5  
±7  
mV  
mV  
dB  
VS = ±4.7 to ±5.5V  
55  
58  
INPUT BIAS CURRENT  
Non-Inverting  
Over Temperature Range  
Inverting  
VCM = 0V  
VCM = 0V  
±5.7  
±10  
±1.1  
±30  
±30  
±80  
±35  
±75  
±18  
±35  
µA  
µA  
µA  
µA  
Over Temperature Range  
NOISE  
Input Voltage Noise Density  
f = 100Hz  
f = 2kHz  
f = 10kHz  
f = 1MHz  
fB = 100Hz to 200MHz  
Input Bias Current Noise Density  
Inverting: f = 1MHz  
Non-Inverting: f = 1MHz  
16  
4.9  
3.2  
3.2  
45.3  
nV/Hz  
nV/Hz  
nV/Hz  
nV/Hz  
µVrms  
32  
11.9  
pA/Hz  
pA/Hz  
INPUT VOLTAGE RANGE  
Common-Mode Input Range  
Over Temperature Range  
Common-Mode Rejection  
±2.5  
45  
±2.9  
50  
V
dB  
VCM = ±1V  
INPUT IMPEDANCE  
Non-Inverting  
Inverting  
500 || 1  
50  
k|| pF  
OPEN-LOOP TRANSRESISTANCE  
Open-Loop Transresistance  
Over Temperature Range  
VO = ±2V, RL = 100Ω  
VO = ±2V, RL = 100Ω  
150  
100  
190  
200  
150  
250  
kΩ  
kΩ  
OUTPUT  
Voltage Output  
Over Temperature Range  
Voltage Output  
Over Temperature Range  
Voltage Output  
Over Temperature Range  
No Load  
RL = 250Ω  
RL = 100Ω  
±2.7  
±2.5  
±2.7  
±2.5  
±2.2  
±2.0  
±2.9  
±2.75  
±2.9  
±2.7  
±2.8  
±2.5  
120  
V
V
V
V
V
V
Output Current, Sourcing  
Over Temperature  
Output Current, Sinking  
Over Temperature  
Short Circuit Current  
Output Resistance  
80  
70  
60  
35  
mA  
mA  
mA  
mA  
mA  
80  
150  
0.02  
0.1MHz, G = +2  
POWER SUPPLY  
Specified Operating Voltage  
Operating Voltage Range  
Quiescent Current  
±5  
V
V
mA  
mA  
±4.5  
±5.5  
±7.75  
±8.5  
±5.75  
±6.5  
VS = ±5V  
±5  
±5.5  
±4.5  
±4.7  
Over Temperature Range  
TEMPERATURE RANGE  
Specification: P, U, N, UB, NB  
Thermal Resistance, θJA  
–40  
+85  
°C  
P
U
N
8-Pin DIP  
SO-8  
SOT23-5  
100  
125  
150  
°C/W  
°C/W  
°C/W  
NOTES: (1) An asterisk () specifies the same value as the grade to the left. (2) Frequency response can be strongly influenced by PC board parasitics. The  
demonstration boards show low parasitic layouts for this part. Refer to the demonstration board layout for details. (3) Slew rate is rate of change from 10% to 90%  
of output voltage step. (4) At G = +1, RFB = 560for PDIP and 402for SO-8. (5) This specification is PC board layout dependent.  
®
OPA658  
2
ABSOLUTE MAXIMUM RATINGS  
PIN CONFIGURATION  
Supply ............................................................................................... ±5.5V  
Internal Power Dissipation .......................... See Thermal Considerations  
Differential Input Voltage .................................................................. ±1.2V  
Input Voltage Range ............................................................................ ±VS  
Storage Temperature Range: P, U, UB, N, NB............ –40°C to +125°C  
Lead Temperature (soldering, 10s) .............................................. +300°C  
(soldering, SOIC 3s) ...................................................................... +260°C  
Junction Temperature (TJ ) ............................................................ +175°C  
Top View  
DIP/SO-8  
NC  
1
8
NC  
–Input  
+Input  
–VS  
2
3
4
7
6
5
+VS  
Output  
NC  
ELECTROSTATIC  
DISCHARGE SENSITIVITY  
SOT23-5  
Electrostatic discharge can cause damage ranging from per-  
formancedegradationtocompletedevicefailure.Burr-Brown  
Corporationrecommendsthatallintegratedcircuitsbehandled  
and stored using appropriate ESD protection methods.  
Output  
–VS  
1
5
4
+VS  
ESD damage can range from subtle performance degradation  
to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric  
changes could cause the device not to meet published speci-  
fications.  
2
3
+Input  
–Input  
PACKAGE/ORDERING INFORMATION  
PACKAGE  
DRAWING  
NUMBER(1)  
TEMPERATURE  
PACKAGE  
MARKING(2)  
ORDERING  
NUMBER(3)  
PRODUCT  
PACKAGE  
RANGE  
OPA658U  
OPA658UB  
OPA658N  
SO-8 Surface Mount  
SO-8 Surface Mount  
5-pin SOT23-5  
182  
182  
331  
–40°C to +85°C  
–40°C to +85°C  
–40°C to +85°C  
OPA658U  
OPA658UB  
A58  
OPA658U  
OPA658UB  
OPA658N-250  
OPA658N-3k  
OPA658NB-250  
OPA658NB-3k  
OPA658P  
OPA658NB  
OPA658P  
5-pin SOT23-5  
331  
006  
–40°C to +85°C  
–40°C to +85°C  
A58B  
8-Pin Plastic DIP  
OPA658P  
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. (2) The “B” grade of the SO-8 will be  
marked with a “B” by pin 8. The “B” grade of the SOT23-5 will be marked with a “B” near pins 3 and 4. (3) The SOT23-5 is only available on a 7" tape and reel (e.g. ordering  
250 pieces of “OPA658N-250” will get a single 250 piece tape and reel. Ordering 3000 pieces of “OPA658N-3k” will get a single 3000 piece tape and reel). Please refer  
to Appendix B of Burr-Brown IC Data Book for detailed Tape and Reel Mechanical information.  
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes  
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant  
any BURR-BROWN product for use in life support devices and/or systems.  
®
3
OPA658  
TYPICAL PERFORMANCE CURVES  
At TA = +25°C, VS = ±5V, RL = 100, and RFB = 402Ω, unless otherwise noted.  
COMMON-MODE REJECTION  
vs INPUT COMMON-MODE VOLTAGE  
PSRR AND CMR vs TEMPERATURE  
75  
55  
50  
45  
40  
35  
30  
25  
70  
65  
60  
55  
50  
45  
PSRR  
PSR+  
PSR–  
CMR  
–4  
–3  
–2  
–1  
0
1
2
3
4
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
Common-Mode Voltage (V)  
Temperature (°C)  
OUTPUT CURRENT vs TEMPERATURE  
IO+  
SUPPLY CURRENT vs TEMPERATURE  
120  
110  
100  
90  
5
4
80  
IO–  
70  
–75  
–50  
–25  
0
25  
50  
75  
100 125  
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
Ambient Temperature (°C)  
Ambient Temperature (°C)  
NON-INVERTING INPUT BIAS CURRENT  
vs TEMPERATURE  
OUTPUT SWING vs TEMPERATURE  
3.20  
3.10  
3.0  
10  
8
RL = 250  
–VO  
+VO  
2.90  
2.80  
2.70  
2.60  
2.50  
2.40  
2.30  
6
–VO  
RL = 100Ω  
+VO  
4
2
–60  
–40  
–20  
0
20  
40  
60  
80  
100  
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
Temperature (°C)  
Ambient Temperature (°C)  
®
OPA658  
4
TYPICAL PERFORMANCE CURVES (CONT)  
At TA = +25°C, VS = ±5V, RL = 100, and RFB = 402Ω, unless otherwise noted.  
OPEN-LOOP TRANSIMPEDANCE AND PHASE  
vs FREQUENCY  
INVERTING INPUT BIAS CURRENT  
vs TEMPERATURE  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
106  
105  
104  
103  
102  
101  
1
Transimpedance  
0
–45  
–90  
–135  
Phase  
–180  
–225  
1k  
1M  
1M  
10k  
100k  
1M  
10M  
100M  
1G  
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
Frequency (Hz)  
Temperature (°C)  
OPEN-LOOP GAIN AND PHASE vs FREQUENCY  
CLOSED-LOOP BANDWIDTH  
60  
40  
6
3
SO-8 Bandwidth = 881MHz, RFB = 402  
Gain  
0
Phase  
G = +1  
20  
–45  
–90  
–135  
–180  
–225  
0
0
–3  
–6  
–9  
–20  
–40  
–60  
DIP Bandwidth = 949MHz, RFB = 560Ω  
1k  
10k  
100k  
1M  
10M  
100M  
1G  
10M  
100M  
Frequency (Hz)  
1G  
Frequency (Hz)  
CLOSED-LOOP BANDWIDTH  
CLOSED-LOOP BANDWIDTH  
G = +5  
20  
17  
14  
11  
8
9
6
G = +2  
SO-8/DIP Bandwidth= 372MHz  
DIP Bandwidth = 682MHz  
3
0
SO-8 Bandwidth = 680MHz  
–3  
–6  
5
2
1M  
10M  
100M  
1G  
10M  
100M  
Frequency (Hz)  
1G  
Frequency (Hz)  
®
5
OPA658  
TYPICAL PERFORMANCE CURVES (CONT)  
At TA = +25°C, VS = ±5V, RL = 100, and RFB = 402Ω, unless otherwise noted.  
SMALL SIGNAL TRANSIENT RESPONSE  
G = +2  
CLOSED-LOOP BANDWIDTH  
160  
120  
80  
26  
23  
20  
17  
14  
11  
8
SO-8/DIP Bandwidth = 200MHz  
G = +10  
40  
0
–40  
–80  
–120  
–160  
Time (5ns/div)  
1M  
10M  
100M  
1G  
Frequency (Hz)  
RECOMMENDED ISOLATION RESISTANCE  
vs CAPACITIVE LOAD  
LARGE SIGNAL TRANSIENT RESPONSE  
G = +2  
1.6  
1.2  
40  
35  
30  
25  
20  
15  
10  
G = +2  
0.8  
0.4  
RISO  
0
OPA658  
–0.4  
–0.8  
–1.2  
–1.6  
CL  
1k  
402Ω  
402Ω  
Time (5ns/div)  
10  
20  
30  
40 50 60 70 80 90100  
Capacitive Load (pf)  
HARMONIC DISTORTION vs FREQUENCY  
5MHz HARMONIC DISTORTION vs OUTPUT SWING  
–60  
–65  
–70  
–75  
–80  
–85  
–90  
–95  
–100  
–50  
–60  
3fO  
2fO  
–70  
G = +2  
–80  
2fO  
–90  
3fO  
–100  
0
1
2
3
4
100k  
1M  
10M  
Frequency (Hz)  
100M  
Output Swing (Vp-p)  
®
OPA658  
6
TYPICAL PERFORMANCE CURVES (CONT)  
At TA = +25°C, VS = ±5V, RL = 100, and RFB = 402Ω, unless otherwise noted.  
HARMONIC DISTORTION vs TEMPERATURE  
(VO = 2Vp-p, G = +2)  
10MHz HARMONIC DISTORTION vs OUTPUT SWING  
–60  
–70  
–60  
–65  
–70  
–75  
–80  
–85  
3fO  
2fO  
2fO  
–80  
3fO  
–90  
–100  
0.01  
0.1  
1
4V  
10  
–75  
–50  
–25  
0
25  
50  
75  
100 125  
Output Swing (Vp-p)  
Temperature (°C)  
HARMONIC DISTORTION vs GAIN  
(fO = 5MHz, VO = 2Vp-p)  
INPUT VOLTAGE AND CURRENT NOISE  
vs FREQUENCY  
100  
10  
1
–50  
–55  
–60  
–65  
–70  
–75  
Inverting Current Noise  
Non-Inverting Noise  
2fO  
3fO  
Voltage Noise  
102  
103  
104  
105  
106  
107  
0
1
2
3
4
5
6
7
8
9
10  
Frequency (Hz)  
Non-Inverting Gain (V/V)  
®
7
OPA658  
For non-inverting operation, the input signal is applied to the  
non-inverting (high impedance buffer) input. The output  
(buffer) error current (IE) is generated at the low impedance  
inverting input. The signal generated at the output is fed back  
to the inverting input such that the overall gain is (1 + RFB/RFF).  
Where a voltage-feedback amplifier has two symmetrical high  
impedance inputs, a current feedback amplifier has a low  
inverting (buffer output) impedance and a high non-inverting  
(buffer input) impedance.  
APPLICATIONS INFORMATION  
THEORY OF OPERATION  
Conventional op amps depend on feedback to drive their  
inputs to the same potential, however the current feedback  
op amp’s inverting and non-inverting inputs are connected  
by a unity gain buffer, thus enabling the inverting input to  
automatically assume the same potential as the non-invert-  
ing input. This results in very low impedance at the inverting  
input to sense the feedback as an error current signal.  
The closed-loop gain for the OPA658 can be calculated  
using the following equations:  
RFB  
RFF  
DISCUSSION OF PERFORMANCE  
InvertingGain =  
The OPA658 is a low-power, unity gain stable, current  
feedback operational amplifier which operates on ±5V power  
supply. The current feedback architecture offers the follow-  
ing important advantages over voltage feedback architec-  
tures: (1) the high slew rate allows the large signal perfor-  
mance to approach the small signal performance, and (2)  
there is very little bandwidth degradation at higher gain  
settings.  
1
(1)  
(2)  
1+  
1+  
LoopGain  
RFB  
1+  
RFF  
NonInvertingGain =  
1
LoopGain  
The current feedback architecture of the OPA658 provides  
the traditional strength of excellent large signal response  
plus wide bandwidth, making it a good choice for use in high  
resolution video, medical imaging and DAC I/V Conver-  
sion. The low power requirements make it an excellent  
choice for numerous portable applications.  
TO  
where LoopGain =  
RFB  
RFB + RS 1+  
RFF  
At higher gains the small value inverting input impedance  
causes an apparent loss in bandwidth. This can be seen from  
the equation:  
ƒ
BW x 1.25  
(
)
DC GAIN TRANSFER CHARACTERISTICS  
[
]
A
=+2  
(
)
V
(3)  
ƒACTUAL BW ≈  
The circuit in Figure 1 shows the equivalent circuit for  
calculating the DC gain. When operating the device in the  
inverting mode, the input signal error current (IE) is ampli-  
fied by the open loop transimpedance gain (TO). The output  
signal generated is equal to TO x IE. Negative feedback is  
applied through RFB such that the device operates at a gain  
equal to –RFB/RFF.  
RS  
RFB  
× 1+  
1+  
RFB  
RFF  
This loss in bandwidth at high gains can be corrected  
without affecting stability by lowering the value of the  
feedback resistor from the specified value of 402Ω.  
OFFSET VOLTAGE AND NOISE  
The output offset is the algebraic sum of the input offset  
voltage and bias current errors. The output offset for non-  
inverting operation is calculated by the following equation:  
RF  
(4)  
B
Output Offset Voltage = ±IbN × RN 1+  
±
RFF  
RFB  
CC  
VIO 1+  
±IbI × RFB  
+
IE  
RFF  
RS  
LS  
RFF  
VO  
TO  
If all terms are divided by the gain (1 + RFB/RFF) it can be  
observed that input referred offsets improve as gain increases.  
The effective noise at the output can be determined by taking  
VN  
(50)  
C1  
VI  
RFB  
RFF  
IbI  
RFB  
IbN  
RN  
VIO  
FIGURE 1. Equivalent Circuit.  
FIGURE 2. Output Offset Voltage Equivalent Circuit.  
®
OPA658  
8
the root sum of the squares of equation (4) and applying the  
spectral noise values found in the Typical Performance Curve  
graph section. This applies to noise from the op amp only.  
Note that both the noise figure (NF) and the equivalent input  
offset voltages improve as the closed loop gain increases (by  
keeping RFB fixed and reducing RFF with RN = 0).  
The 402used in setting the specification achieves a nomi-  
nal maximally flat butterworth response while assuming a  
2pF output pin parasitic. Increasing the feedback resistor  
will over compensate the amplifier, rolling off the frequency  
response, while decreasing it will decrease phase margin,  
peaking up the frequency response. Note that a non-invert-  
ing, unity gain buffer application still requires a feedback  
resistor for stability (560for SO-8, 402for PDIP, and  
324for SOT23).  
INCREASING BANDWIDTH AT HIGH GAINS  
The closed-loop bandwidth can be extended at high gains by  
reducing the value of the feedback resistor RFB. This band-  
width reduction is caused by the feedback current being split  
between RS and RFF (refer to Figure 1). As the gain increases  
(for a fixed RFB), more feedback current is shunted through  
RFF, which reduces closed-loop bandwidth.  
d) Connections to other wideband devices on the board  
may be made with short direct traces or through on-board  
transmission lines. For short connections, consider the trace  
and the input to the next device as a lumped capacitive load.  
Relatively wide traces (50 to 100 mils) should be used,  
preferably with ground and power planes opened up around  
them. Estimate the total capacitive load and set RISO from  
the plot of recommended RISO vs capacitive load. Low  
parasitic loads may not need an RISO since the OPA658 is  
nominally compensated to operate with a 2pF parasitic load.  
CIRCUIT LAYOUT AND BASIC OPERATION  
Achieving optimum performance with a high frequency am-  
plifier like the OPA658 requires careful attention to layout  
parasitics and selection of external components. Recommen-  
dations for PC board layout and component selection include:  
If a long trace is required and the 6dB signal loss intrinsic to  
doubly terminated transmission lines is acceptable, imple-  
ment a matched impedance transmission line using microstrip  
or stripline techniques (consult an ECL design handbook for  
microstrip and stripline layout techniques). A 50environ-  
ment is not necessary on board, and in fact a higher imped-  
ance environment will improve distortion as shown in the  
distortion vs load plot. With a characteristic impedance  
defined based on board material and desired trace dimen-  
sions, a matching series resistor into the trace from the  
output of the amplifier is used as well as a terminating shunt  
resistor at the input of the destination device. Remember  
also that the terminating impedance will be the parallel  
combination of the shunt resistor and the input impedance of  
the destination device; the total effective impedance should  
match the trace impedance. Multiple destination devices are  
best handled as separate transmission lines, each with their  
own series and shunt terminations.  
a) Minimize parasitic capacitance to any ac ground for all  
of the signal I/O pins. Parasitic capacitance on the output  
and inverting input pins can cause instability; on the non-  
inverting input it can react with the source impedance to  
cause unintentional bandlimiting. To reduce unwanted ca-  
pacitance, a window around the signal I/O pins should be  
opened in all of the ground and power planes. Otherwise,  
ground and power planes should be unbroken elsewhere on  
the board.  
b) Minimize the distance (< 0.25") from the two power pins  
to high frequency 0.1µF decoupling capacitors. At the pins,  
the ground and power plane layout should not be in close  
proximity to the signal I/O pins. Avoid narrow power and  
ground traces to minimize inductance between the pins and  
the decoupling capacitors. Larger (2.2µF to 6.8µF) decoupling  
capacitors, effective at lower frequencies, should also be  
used. These may be placed somewhat farther from the  
device and may be shared among several devices in the same  
area of the PC board.  
If the 6dB attenuation loss of a doubly terminated line is  
unacceptable, a long trace can be series-terminated at the  
source end only. This will help isolate the line capacitance  
from the op amp output, but will not preserve signal integrity  
as well as a doubly terminated line. If the shunt impedance  
at the destination end is finite, there will be some signal  
attenuation due to the voltage divider formed by the series  
and shunt impedances.  
c) Careful selection and placement of external compo-  
nents will preserve the high frequency performance of the  
OPA658. Resistors should be a very low reactance type.  
Surface mount resistors work best and allow a tighter overall  
layout. Metal film or carbon composition axially-leaded  
resistors can also provide good high frequency performance.  
Again, keep their leads as short as possible. Never use  
wirewound type resistors in a high frequency application.  
e) Socketing a high speed part like the OPA658 is not  
recommended. The additional lead length and pin-to-pin  
capacitance introduced by the socket creates an extremely  
troublesome parasitic network which can make it almost  
impossible to achieve a smooth, stable response. Best results  
are obtained by soldering the part onto the board. If socket-  
ing for the DIP package is desired, high frequency flush  
mount pins (e.g., McKenzie Technology #710C) can give  
good results.  
Since the output pin and the inverting input pin are most  
sensitive to parasitic capacitance, always position the feed-  
back and series output resistor, if any, as close as possible to  
the package pins. Other network components, such as non-  
inverting input termination resistors, should also be placed  
close to the package.  
The feedback resistor value acts as the frequency response  
compensation element for a current feedback type amplifier.  
The OPA658 is nominally specified for operation using  
±5V power supplies. A 10% tolerance on the supplies, or an  
ECL –5.2V for the negative supply, is within the maximum  
®
9
OPA658  
specified total supply voltage of 11V. Higher supply voltages  
can break down internal junctions possibly leading to cata-  
strophic failure. Single supply operation is possible as long as  
common mode voltage constraints are observed. The com-  
mon mode input and output voltage specifications can be  
interpreted as a required headroom to the supply voltage.  
Observing this input and output headroom requirement will  
allow non-standard or single supply operation. Figure 3  
shows one approach to single-supply operation.  
100  
10  
1
0.1  
G = +2  
0.01  
0.001  
+VS  
+VS  
10k  
100k  
1M  
Frequency (Hz)  
10M  
100M  
VS  
2
VS  
2
VOUT  
=
+ AV VAC  
ROUT  
FIGURE 4. Closed-Loop Output Impedance vs Frequency.  
VAC  
OPA658  
THERMAL CONSIDERATIONS  
RL  
The OPA658 will not require heatsinking under most oper-  
ating conditions. Maximum desired junction temperature  
will set a maximum allowed internal power dissipation as  
described below. In no case should the maximum junction  
temperature be allowed to exceed 175°C.  
402  
AV = +2  
402Ω  
Operating junction temperature (TJ) is given by  
TA + PD θJA. The total internal power dissipation (PD) is  
the sum of quiescent power (PDQ) and additional power  
dissipated in the output stage (PDL) to deliver load power.  
Quiescent power is simply the specified no-load supply  
current times the total supply voltage across the part. PDL  
will depend on the required output signal and load but  
would, for a grounded resistive load, be at a maximum when  
the output is fixed at a voltage equal to 1/2 either supply  
voltage (for equal bipolar supplies). Under this condition  
FIGURE 3. Single Supply Operation.  
ESD PROTECTION  
ESD static damage has been well recognized for MOSFET  
devices, but any semiconductor device deserves protection  
from this potentially damaging source. This is particularly  
true for very high speed, fine geometry processes.  
2
PDL = VS /(4 • RL) where RL includes feedback network  
loading.  
Note that it is the power in the output stage and not into the  
load that determines internal power dissipation.  
ESD static damage can cause subtle changes in amplifier  
input characteristics without necessarily destroying the de-  
vice. In precision operational amplifiers, this may cause a  
noticeable degradation of offset voltage and drift. Therefore,  
static protection is strongly recommended when handling  
the OPA658.  
As an example, compute the maximum TJ for an OPA658N  
at AV = +2, RL = 100, RFB = 402, ±VS = ±5V, and the  
specified maximum TA = +85°C. PD = 10V • 8.5mA + 52/  
[4 • (100|| 804)] = 155mW. Maximum TJ = 85°C +  
0.155W • 150°C/W = 108°C.  
OUTPUT DRIVE CAPABILITY  
DRIVING CAPACITIVE LOADS  
The OPA658 has been optimized to drive 75and 100Ω  
resistive loads. The device can drive 2Vp-p into a 75load.  
This high-output drive capability makes the OPA658 an  
ideal choice for a wide range of RF, IF, and video applica-  
tions. In many cases, additional buffer amplifiers are un-  
needed.  
The OPA658’s output stage has been optimized to drive low  
resistive loads. Capacitive loads, however, will decrease the  
amplifier’s phase margin which may cause high frequency  
peaking or oscillations. Capacitive loads greater than 5pF  
should be buffered by connecting a small resistance, usually  
10to 35, in series with the output as shown in Figure 5.  
This is particularly important when driving high capacitance  
loads such as flash A/D converters.  
Many demanding high-speed applications such as  
ADC/DAC buffers require op amps with low wideband  
output impedance. For example, low output impedance is  
essential when driving the signal-dependent capacitances at  
the inputs of flash A/D converters. As shown in Figure 4,  
the OPA658 maintains very low closed-loop output imped-  
ance over frequency. Closed-loop output impedance in-  
creases with frequency since loop gain is decreasing with  
frequency.  
In general, capacitive loads should be minimized for opti-  
mum high frequency performance. Coax lines can be driven  
if the cable is properly terminated. The capacitance of coax  
cable (29pF/foot for RG-58) will not load the amplifier  
when the coaxial cable or transmission line is terminated  
with its characteristic impedance.  
®
OPA658  
10  
close-in spurious tones will appear at fO ±3 • f. The two  
tone, third-order spurious plot shown in Figure 7 indicates  
how far below these two equal power, closely spaced, tones  
the intermodulation spurious will be. The single tone power  
is at a matched 50load. The unique design of the OPA658  
provides much greater spurious free range than what a two-  
tone third-order intermodulation intercept specification would  
predict. This can be seen in Figure 7 as the spurious free  
range actually increases at the higher output power levels.  
402  
402Ω  
10to 35Ω  
RISO  
OPA658  
RL  
CL  
50Ω  
FIGURE 5. Driving Capacitive Loads.  
TWO TONE, THIRD-ORDER SPURIOUS LEVELS  
–65  
COMPENSATION  
20MHz  
The OPA658 is internally compensated and is stable in unity  
gain with a phase margin of approximately 62°, and approxi-  
mately 64° in a gain of +2V/V when used with the recom-  
mended feedback resistor value. Frequency response for  
other gains are shown in the Typical Performance Curves.  
–70  
–75  
10MHz  
5MHz  
–80  
The high-frequency response of the OPA658 in a good  
layout is very flat with frequency.  
–85  
–90  
DISTORTION  
–18 –16 –14 –12 –10 –8 –6 –4 –2  
Single Tone Power (dBm)  
0
2
4
The OPA658’s Harmonic Distortion characteristics into a  
100load are shown versus frequency and power output in  
the Typical Performance Curves. Distortion can be further  
improved by increasing the load resistance as illustrated in  
Figure 6. Remember to include the contribution of the  
feedback resistance when calculating the effective load re-  
sistance seen by the amplifier.  
FIGURE 7. Third-Order Spurious Level vs Frequency.  
DIFFERENTIAL GAIN AND PHASE  
Differential Gain (dG) and Differential Phase (dP) are among  
the more important specifications for video applications. dG  
is defined as the percent change in closed-loop gain over a  
specified change in output voltage level. dP is defined as the  
change in degrees of the closed-loop phase over the same  
output voltage change. Both dG and dP are specified at the  
NTSC sub-carrier frequency of 3.58MHz and the PAL sub-  
carrier of 4.43MHz. All NTSC measurements were per-  
formed using a Tektronix model VM700A Video Measure-  
ment Set.  
5MHz HARMONIC DISTORTION vs  
LOAD RESISTANCE (G = +2)  
–55  
–60  
G = +2, VO = 2Vp-p, fO = 5MHz  
–65  
3fO  
–70  
dG/dP of the OPA658 were measured with the amplifier in a  
gain of +2V/V with 75input impedance and the output  
back-terminated in 75. The input signal selected from the  
generator was a 0V to 1.4V modulated ramp with sync pulse.  
With these conditions the test circuit shown in Figure 8  
delivered a 100IRE modulated ramp to the 75input of the  
videoanalyzer. The signal averaging feature of the analyzer  
–75  
2fO  
–80  
–85  
10  
100  
1k  
Load Resistance ()  
FIGURE 6. 5MHz Harmonic Distortion vs Load Resistance.  
75Ω  
75Ω  
Narrowband communication channel requirements will ben-  
efit from the OPA658’s wide bandwidth and low  
intermodulation distortion on low quiescent power. If output  
signal power at two closely spaced frequencies is required,  
third-order nonlinearities in any amplifier will cause spuri-  
ous power at frequencies very near the two funda-  
mental frequencies. If the two test frequencies, f1 and f2,  
are specified in terms of average and delta frequency,  
fO = (f1 + f2)/2 and f = f2 – f1 , the two, third-order,  
OPA658  
75Ω  
402Ω  
75Ω  
402Ω  
TEK TSG 130A  
TEK VM700A  
FIGURE 8. Configuration for Testing Differential Gain/Phase.  
®
11  
OPA658  
was used to establish a reference against which the perfor-  
mance of the amplifier was measured. Signal averaging was  
also used to measure the dg and dp of the test signal in order  
to eliminate the generator’s contribution to measured ampli-  
fier performance. Typical performance of the OPA658 is  
0.025% differential gain and 0.02° differential phase to both  
NTSC and PAL standards.  
Demonstration boards are available for each OPA658 pack-  
age style. These boards implement a very low parasitic  
layout that will produce the excellent frequency and pulse  
responses shown in the Typical Performance Curves. For  
each package style, the recommended demonstration board  
is:  
DEM-OPA65xP  
DEM-OPA65xU  
DEM-OPA6xxN  
8-Pin DIP for the OPA658P  
SO-8 for the OPA658U  
SOT23 for the OPA658N  
SPICE MODELS AND EVALUATION BOARDS  
Computer simulation of circuit performance using SPICE is  
often useful when analyzing the performance of analog  
circuits and systems. This is particularly true for Video and  
RF amplifier circuits where parasitic capacitance and induc-  
tance can have a major effect on circuit performance. SPICE  
models are available on a disk from the Burr-Brown Appli-  
cations Department.  
Contact your local Burr-Brown sales office or distributor to  
order demonstration boards.  
R3  
R4  
J2  
–In  
402  
C1  
2.2µF  
R5  
1
+5V  
+
2
C3  
GND  
0.1µF  
P1  
2
3
7
R1  
J1  
6
Out  
R6  
J1  
OPA658  
+In  
4
1
2
GND  
–5V  
C2  
0.1µF  
R7  
R5  
P2  
C4  
2.2µF  
+
FIGURE 9. Layout Detail For DEM-OPA65xP Demonstration Board.  
®
OPA658  
12  
DEM-OPA65xP Demonstration Board Layout  
(B)  
(A)  
(D)  
(C)  
FIGURE 10a. Evaluation Board Silkscreen (Bottom). 10b. Evaluation Board Silkscreen (Top). 10c. Evaluation Board Layout  
(Solder Side). 10d. Evaluation Board Layout (Layout Side).  
TYPICAL APPLICATION  
402Ω  
402Ω  
75Transmission Line  
75Ω  
VOUT  
OPA658  
Video  
Input  
75Ω  
75Ω  
FIGURE 11. Low Distortion Video Amplifier.  
®
13  
OPA658  

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