OPA728 [BB]
20MHz, High Precision CMOS Operational Amplifier; 20MHz,高精度CMOS运算放大器![OPA728](http://pdffile.icpdf.com/pdf1/p00076/img/icpdf/OPA728_401416_icpdf.jpg)
型号: | OPA728 |
厂家: | ![]() |
描述: | 20MHz, High Precision CMOS Operational Amplifier |
文件: | 总20页 (文件大小:536K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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OPA727, OPA2727
OPA4727, OPA728
SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
e-trim 20MHz, High Precision CMOS
Operational Amplifier
FD EATURES
DESCRIPTION
OFFSET: 15µV (typ), 150µV (max)
DRIFT: 0.3µV/°C (typ), 1.5µV/°C (max)
BANDWIDTH: 20MHz
The OPA727 and OPA728 series op amps use a
state-of-the-art 12V analog CMOS process and e-trim, a
package-level trim, offering outstanding dc precision and
ac performance. The extremely low offset (150µV max)
and drift (1.5µV/°C) are achieved by trimming the IC
digitally after packaging to avoid the shift in parameters as
a result of stresses during package assembly. To correct
for offset drift, the OPA727/OPA728 family is trimmed over
temperature. The devices feature very high CMRR and
open loop gain to minimize errors.
D
D
D
D
D
D
D
D
D
SLEW RATE: 30V/µs
BIAS CURRENT: 100pA (max)
LOW NOISE: 6nV/√Hz at 100kHz
THD+N: 0.0003% at 1kHz
QUIESCENT CURRENT: 4.3mA/ch
SUPPLY VOLTAGE: 4V to 12V
SHUTDOWN MODE (OPA728): 6µA
Excellent ac characteristics, such as 20MHz GBW, 30V/µs
slew rate and 0.0003% THD+N make the OPA727 and
OPA728 well-suited for communication, high-end audio,
and active filter applications. With a bias current of less
than 100pA, they are ideal for use as transimpedance
(I/V-conversion) amplifiers for monitoring optical power in
ONET applications.
AD PPLICATIONS
OPTICAL NETWORKING
D
D
D
D
D
D
D
D
TRANSIMPEDANCE AMPLIFIERS
INTEGRATORS
ACTIVE FILTERS
A/D CONVERTER DRIVERS
I/V CONVERTER FOR DACs
HIGH PERFORMANCE AUDIO
PROCESS CONTROL
Optimized for single-supply operation up to 12V, the input
common-mode range extends to GND for true
single-supply functionality. The output swings to within
150mV of the rails, maximizing dynamic range. The low
quiescent current of 4.3mA makes it well-suited for use in
battery-operated equipment. The OPA728 shutdown
version reduces the quiescent current to typically 6µA and
features a reference pin for easy shutdown operation with
standard CMOS logic in dual-supply applications.
TEST EQUIPMENT
OPAx727 AND OPAx728 RELATED PRODUCTS
FEATURES
PRODUCT
20MHz, 3mV, 4µV/°C
OPA725
(non-etrim version of OPA727)
20MHz, 3mV, 4µV/°C, Shutdown
(non-etrim version of OPA728)
For ease of use, the OPA727 and OPA728 op amp families
are fully specified and tested over the supply range of 4V
to 12V. The OPA727 (single) and OPA728 (single with
shutdown) are available in MSOP-8 and DFN-8; the
OPA2727 (dual) is available in DFN-8 and SO-8, and the
quad version OPA4727 will be available Q1’05 in
TSSOP-14. All versions are specified for operation from
−40°C to +125°C.
OPA726
+12V
OPA727
VOUT
λ
−
VB
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
e-trim is a trademark of Texas Instruments, Incorporated. All other trademarks are the property of their respective owners.
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Copyright 2004, Texas Instruments Incorporated
www.ti.com
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
(1)
PACKAGE/ORDERING INFORMATION
PRODUCT
PACKAGE-LEAD
PACKAGE DESIGNATOR
PACKAGE MARKING
Non-Shutdown
MSOP-8
DFN-8
(2)
DFN-8
DGK
DRB
DRB
D
AUE
NSF
OPA727
OPA2727
OPA2727
NSD
SO-8
OPA2727A
OPA4727A
(2)
OPA4727
TSSOP-14
PW
Shutdown
MSOP-8
DFN-8
DGK
DRB
AUF
NSG
OPA728
(1)
(2)
For the most current package and ordering information, see the Package Option Addendum located at the end of this datasheet.
Available Q1’05.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handledwith appropriate precautions. Failure to observe
(1)
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +13.2V
(2)
Signal Input Terminals, Voltage
. . . . . . . . . −0.5V to (V+) + 0.5V
. . . . . . . . . . . . . . . . . . . 10mA
proper handling and installation procedures can cause damage.
2)
Current(
(3)
Output Short Circuit
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
. . . . . . . . . . . . . . . . . . . . . . . . . Continuous
Operating Temperature . . . . . . . . . . . . . . . . . . . . . −55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . −55°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Lead Temperature (soldering, 10s) . . . . . . . . . . . . . . . . . . . . +300°C
ESD Rating (Human Body Model) . . . . . . . . . . . . . . . . . . . . 2000V
(Charged Device Model) . . . . . . . . . . . . . . . . . 1000V
(1)
Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only, and
functional operation of the device at these or any other conditions
beyond those specified is not supported.
(2)
(3)
Input terminals are diode-clamped to the power-supply rails.
Input signals that can swing more than 0.5V beyond the supply
rails should be current limited to 10mA or less.
Short-circuit to ground, one amplifier per package.
2
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
PIN CONFIGURATIONS
OPA727
OPA727
NC(1)
V+
NC(1)
1
2
3
4
8
7
6
5
NC(1)
V+
NC(1)
1
2
3
4
8
7
6
5
Exposed
Thermal
Die Pad
on
−
IN
+IN
−
IN
+IN
OUT
NC(1)
OUT
NC(1)
Underside(2)
−
V
−
V
DFN−8
MSOP−8
OPA728
OPA728
REF(3)
1
2
3
4
8
7
6
5
REF(3)
1
2
3
4
8
7
6
5
Enable
V+
Enable
V+
Exposed
Thermal
Die Pad
on
−
IN
−
IN
OUT
NC(1)
+IN
OUT
NC(1)
+IN
Underside(2)
−
V
−
V
DFN−8
MSOP−8
OPA2727(4)
OPA2727
V+
OUT A
1
2
3
4
8
7
6
5
V+
OUT A
1
2
3
4
8
7
6
5
Exposed
Thermal
Die Pad
on
A
OUT B
−
IN A
OUT B
−
IN A
B
−
IN B
+IN A
−
IN B
+IN A
Underside(2)
−
+IN B
V
+IN B
−
V
DFN−8
SO−8
OPA4727(4)
OUT A
1
2
3
4
5
6
7
14 OUT D
B
A
−
−
IN D
IN A
+IN A
13
(1)
(2)
(3)
(4)
NC denotes no internal connection.
Connect thermal die pad to V−.
REF is the reference voltage for ENABLE pin.
Available Q1’05.
12 +IN D
11 V+
−
V
+IN B
10 +IN C
−
−
IN B
OUT B
9
8
IN C
OUT C
A
B
TSSOP−14
3
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
ELECTRICAL CHARACTERISTICS: V = +4V to +12V or V = 2V to 6V
S
S
Boldface limits apply over the specified temperature range, T = −40°C to +125°C.
A
At T = +25°C, R = 10kΩ connected to V /2, and V
= V /2, unless otherwise noted.
A
L
S
OUT
S
OPA727, OPA728, OPA2727
PARAMETER
CONDITIONS
UNIT
MIN
TYP
MAX
OFFSET VOLTAGE
Input Offset Voltage
Drift
V
V
=
5V, V = 0V
CM
15
0.3
0.6
30
150
1.5
µV
OS
S
dV /dT
OS
0°C to +85°C
−40°C to +125°C
2V to 6V, V
CM
µV/°C
µV/°C
µV/V
µV/V
µV/V
3.0
vs Power Supply
Over Temperature
Channel Separation, dc
PSRR
V
=
= V−
150
150
S
V
=
2V to 6V, V
CM
= V−
S
1
INPUT BIAS CURRENT
Input Bias Current, OPA727, OPA728
Input Bias Current, OPA2727
Over Temperature
I
10
60
100
500
pA
pA
B
See Typical Characteristics
10
Input Offset Current
I
100
pA
OS
NOISE
Input Voltage Noise, f = 0.1Hz to 10Hz
Input Voltage Noise Density, f = 10kHz
Input Voltage Noise Density, f = 100kHz
Input Current Noise Density, f = 1kHz
e
n
V
V
V
V
=
=
=
=
6V, V
6V, V
6V, V
6V, V
= 0V
10
10
6
µV
S
S
S
S
CM
CM
CM
CM
PP
e
n
= 0V
= 0V
= 0V
nV/√Hz
nV/√Hz
fA/√Hz
e
n
i
n
2.5
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
Common-Mode Rejection Ratio
Over Temperature
V
(V−)
86
(V+) − 2.5
V
CM
CMRR
(V−) ≤ V
(V−) ≤ V
(V−) ≤ V
(V−) ≤ V
≤ (V+) − 2.5V
≤ (V+) − 2.5V
≤ (V+) − 3V
94
dB
dB
dB
dB
CM
84
CM
94
100
CM
Over Temperature
≤ (V+) − 3V
84
CM
INPUT IMPEDANCE
Differential
11
10 5
Ω pF
Ω pF
11
Common-Mode
10 4
OPEN-LOOP GAIN
Open-Loop Voltage Gain
OPA727, OPA728
Over Temperature
OPA2727
A
OL
R
= 100kΩ, 0.15V < V < (V+) − 0.15V
110
100
110
100
106
96
120
120
116
116
dB
dB
dB
dB
dB
dB
dB
dB
L
O
R
= 100kΩ, 0.15V < V < (V+) − 0.15V
L
O
R
= 100kΩ, 0.175V < V < (V+) − 0.175V
L
O
Over Temperature
OPA727, OPA728
Over Temperature
OPA2727
R = 100kΩ, 0.175V < V < (V+) − 0.175V
L O
R
= 1kΩ, 0.25V < V < (V+) − 0.25V
L
O
R
= 1kΩ, 0.25V < V < (V+) − 0.25V
L
O
R
= 2kΩ, 0.25V < V < (V+) − 0.25V
106
96
L
O
Over Temperature
R
L
= 2kΩ, 0.5V < V < (V+) − 0.5V
O
FREQUENCY RESPONSE
Gain-Bandwidth Product
Slew Rate
C
= 20pF
L
GBW
SR
20
30
MHz
V/µs
ns
G = +1
Settling Time, 0.1%
0.01%
t
V
V
=
=
6V, 5V Step, G = +1
6V, 5V Step, G = +1
350
450
50
S
S
S
ns
Overload Recovery Time
Total Harmonic Distortion + Noise
V
• Gain > V
ns
IN
S
THD+N
V
=
6V, V
= 2V
, R = 600Ω,
0.0003
%
S
OUT
RMS
L
G = +1, f = 1kHz
4
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
ELECTRICAL CHARACTERISTICS: V = +4V to +12V or V = 2V to 6V (continued)
S
S
Boldface limits apply over the specified temperature range, T = −40°C to +125°C.
A
At T = +25°C, R = 10kΩ connected to V /2, and V
= V /2, unless otherwise noted.
A
L
S
OUT
S
OPA727, OPA728, OPA2727
PARAMETER
OUTPUT
CONDITIONS
UNIT
MIN
TYP
MAX
Voltage Output Swing from Rail
OPA727, OPA728
R
= 100kΩ, A > 110dB
100
125
200
200
150
150
175
175
250
250
250
500
mV
mV
mV
mV
mV
mV
mV
mV
mA
mA
L
OL
Over Temperature
OPA2727
R
L
= 100kΩ, A > 100dB
OL
R
L
= 100kΩ, A > 110dB
OL
Over Temperature
OPA727, OPA728
Over Temperature
OPA2727
R
L
= 100kΩ, A > 100dB
OL
R
= 1kΩ, A > 106dB
L
OL
R
= 1kΩ, A > 96dB
L
OL
R
= 2kΩ, A = 106dB
L
OL
Over Temperature
Output Current
R
= 2kΩ, A = 96dB
L
OL
I
V − V < 1V
OUT
40
55
OUT
S
Short-Circuit Current
Capacitive Load Drive
Open-Loop Output Impedance
I
SC
LOAD
C
See Typical Characteristics
40
f = 1MHz, I = 0
O
Ω
ENABLE/SHUTDOWN (OPA728)
t
5
µs
µs
V
OFF
t
80
ON
Enable Reference (Ref Pin) Voltage Range
V−
(V+) − 2
V
V
(amplifier is disabled)
(amplifier is enabled)
< V +0.8V
DGND
V
L
> V
+2V
DGND
V
H
Input Bias Current of Enable Pin
5
6
pA
µA
I
Amplifier Disabled
15
12
QSD
POWER SUPPLY
Specified Voltage Range
Operating Voltage Range
Quiescent Current (per amplifier)
Over Temperature
V
V
4
V
V
S
S
Q
3.5 to 13.2
4.3
I
I
= 0
6.5
mA
mA
O
6.5
TEMPERATURE RANGE
Specified Range
Operating Range
Storage Range
Thermal Resistance
MSOP-8, SO-8
TSSOP-14
−40
−55
−55
+125
+125
+150
°C
°C
°C
q
JA
150
100
46
°C/W
°C/W
°C/W
DFN-8
5
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
TYPICAL CHARACTERISTICS
At T = +25°C, V
=
6V, R = 10kΩ connected to V /2, and V
= V /2, unless otherwise noted.
OUT S
A
S
L
S
COMMON−MODE REJECTION RATIO vs FREQUENCY
GAIN AND PHASE vs FREQUENCY
120
100
80
60
40
20
0
180
160
140
120
100
80
180
160
140
120
100
80
Phase
60
60
40
40
Gain
20
20
0
0
−
≤
≤
−
(V ) VCM (V+) 2V
−20
−20
100M
10
100
1k
10k
100k
1M
10M
10 100 1k
10k
100k
1M
10M
Frequency (Hz)
Frequency (Hz)
POWER−SUPPLY REJECTION RATIO vs FREQUENCY
MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
VS 6V
7
100
90
80
70
60
50
40
30
20
10
0
=
6
5
4
3
2
1
0
Indicates maximum output
for no visible distortion.
100k
10M
100
1k
10k
100k
1M
10M
100M
10k
1M
Frequency (Hz)
Frequency (Hz)
INPUT VOLTAGE NOISE SPECTRAL DENSITY
vs FREQUENCY
CHANNEL SEPARATION vs FREQUENCY
140
120
100
80
1000
100
10
60
40
20
1
1k
10k
100k
1M
10M
100M
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Frequency (Hz)
6
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
TYPICAL CHARACTERISTICS (continued)
At T = +25°C, V
=
6V, R = 10kΩ connected to V /2, and V = V /2, unless otherwise noted.
OUT S
A
S
L
S
OFFSET CURRENT vs TEMPERATURE
INPUT BIAS CURRENT vs COMMON−MODE VOLTAGE
10k
1k
100k
10k
1k
_
+125 C
_
+85 C
100
10
_
+25 C
100
10
IB
< 10pA
−
10
1
_
+25 C
−
100
−
1k
0.1
0.01
_
+85 C
−
10k
_
+125 C
−
100k
−
−
25
50
0
25
50
75
100
125
150
−
−
−
2
6
4
0
2
4
6
_
Temperature ( C)
Common−Mode Voltage (V)
OPEN−LOOP GAIN vs TEMPERATURE
POWER−SUPPLY REJECTION RATIO vs TEMPERATURE
140
130
120
110
100
90
120
100
80
Ω
RL = 100k
Ω
RL = 1k
80
−
60
−
−
−
25
50
25
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
_
_
Temperature ( C)
Temperature ( C)
QUIESCENT CURRENT vs TEMPERATURE
COMMON−MODE REJECTION RATIO vs TEMPERATURE
5
110
100
90
4
3
2
1
0
80
70
−
≤
≤
−
(V ) VCM (V+) 2V
60
−
−
25
50
0
25
50
75
100
125
150
−
−
25
50
0
25
50
75
100
125
150
_
Temperature ( C)
_
Temperature ( C)
7
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
TYPICAL CHARACTERISTICS (continued)
At T = +25°C, V
=
6V, R = 10kΩ connected to V /2, and V = V /2, unless otherwise noted.
OUT S
A
S
L
S
SHORT−CIRCUIT CURRENT vs TEMPERATURE
QUIESCENT CURRENT vs SUPPLY VOLTAGE
90
80
70
60
50
40
30
20
10
0
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
Sourcing
Sinking
−
−
25
50
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10 11 12 13 14
_
Temperature ( C)
Supply Voltage (V)
SHORT−CIRCUIT CURRENT vs SUPPLY VOLTAGE
Sourcing
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
90
80
70
60
50
40
30
20
10
0
6
4
2
0
−
_
40 C
Sinking
_
25 C
_
125 C
−
−
−
2
4
6
−
_
40 C
0
10
20
30
40
50
60
70
80
Output Current (mA)
Supply Voltage (V)
SETTLING TIME vs GAIN
TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0.01
Ω
RL = 600
VOUT = 2Vrms
BW = 80kHz
0.001
0.01%
0.1%
0
0.0001
1
10
100
10
100
1k
10k
100k
Noninverting Gain (V/V)
Frequency (Hz)
8
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
TYPICAL CHARACTERISTICS (continued)
At T = +25°C, V
=
6V, R = 10kΩ connected to V /2, and V = V /2, unless otherwise noted.
OUT S
A
S
L
S
OFFSET VOLTAGE PRODUCTION DISTRIBUTION
5V
SMALL−SIGNAL OVERSHOOT vs CAPACITIVE LOAD
90
80
70
60
50
40
30
20
10
0
VS
=
G = +1
−
G =
1
CF = 3pF
G = +5
CF = 1pF
10
100
Capacitive Load (pF)
1000
µ
Offset Voltage ( V)
OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION
OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION
_
_
−
_
_
(0 C to +85 C)
( 40 C to +125 C)
VS
= 5V
VS
= 5V
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
µ
_
Offset Voltage Drift ( V/ C)
µ
_
Offset Voltage Drift ( V/ C)
OFFSET VOLTAGE vs TEMPERATURE
SMALL−SIGNAL STEP RESPONSE
300
200
100
0
VS
= 5V
G = +1
RL = 10k
Ω
CL = 20pF
σ
4
−
100
200
300
σ
4
−
−
5 Representative Units Shown
−
−
25
50
0
25
50
75
100
125
100ns/div
_
Temperature ( C)
9
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
TYPICAL CHARACTERISTICS (continued)
At T = +25°C, V
=
6V, R = 10kΩ connected to V /2, and V = V /2, unless otherwise noted.
OUT S
A
S
L
S
LARGE−SIGNAL STEP RESPONSE
SMALL−SIGNAL STEP RESPONSE
G = +1
CF = 2pF
CF = 3pF
Ω
RL = 10k
CL = 20pF
CF = 4pF
CF
R
G = −1
F
10k
Ω
10kΩ
O PA727
CL
20pF
400ns/div
200ns/div
LARGE−SIGNAL STEP RESPONSE
CF
4pF
−
G =
1
RF
Ω
10k
10k
Ω
OPA727
CL
20pF
400ns/div
10
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
APPLICATIONS INFORMATION
The OPA727 and OPA728 family of op amps use e-trim,
an adjustment to offset voltage and temperature drift made
during the final steps of manufacturing after the plastic
molding is completed. This compensates for performance
shifts that can occur during the molding process. Through
e-trim, the OPA727 and OPA728 deliver excellent offset
voltage (150µV max) and extremely low offset voltage drift
(1.5µV/°C). Additionally, these 20MHz CMOS op amps
have a fast slew rate, low noise, and excellent PSRR,
CMRR, and AOL. They can operate on typically 4.3mA
quiescent current from a single (or split) supply in the range
of 4V to 12V ( 2V to 6V), making them highly versatile
and easy to use. They are stable in a unity-gain
configuration.
a) Single−Supply Configuration
Enable
+12V
Digital
Logic
OPA728
VO
Ref
DGND
b) Dual−Supply Configuration
Enable
+5V
Power-supply pins should be bypassed with 1nF ceramic
capacitors in parallel with 1µF tantalum capacitors.
Digital
Logic
OPA728
VO
OPERATING VOLTAGE
Ref
OPA727 series op amps are specified from 4V to 12V
supplies over a temperature range of −40°C to +125°C.
They will operate well in 5V or +5V to +12V power-supply
systems. Parameters that vary significantly with operating
voltage or temperature are shown in the Typical
Characteristics.
DGND
−
5V
Figure 1. Enable Reference Pin Connection for
Single- and Dual-Supply Configurations
ENABLE/SHUTDOWN
OPA727 series op amps require approximately 4.3mA
quiescent current. The enable/shutdown feature of the
OPA728 allows the op amp to be shut off to reduce this
current to approximately 6µA.
INPUT OVER-VOLTAGE PROTECTION
Device inputs are protected by ESD diodes that will
conduct if the input voltages exceed the power supplies by
more than approximately 300mV. Momentary voltages
greater than 300mV beyond the power supply can be
tolerated if the current is limited to 10mA. This is easily
accomplished with an input resistor in series with the op
amp, as shown in Figure 2. The OPA727 series features
no phase inversion when the inputs extend beyond
supplies, if the input is current limited.
The enable/shutdown input is referenced to the Enable
Reference Pin, DGND (see Pin Configurations). This pin
can be connected to logic ground in dual-supply op amp
configurations to avoid level-shifting the enable logic
signal, as shown in Figure 1.
The Enable Reference Pin voltage, VDGND, must not
exceed (V+) − 2V. It may be set as low as V−. The amplifier
is enabled when the Enable Pin voltage is greater than
V
DGND + 2V. The amplifier is disabled (shutdown) if the
Enable Pin voltage is less than VDGND + 0.8V. The Enable
Pin is connected to internal pull-up circuitry and will enable
the device if left unconnected.
V+
IOVERLOAD
COMMON-MODE VOLTAGE RANGE
10mA max
The input common-mode voltage range of the OPA727
and OPA728 series extends from V− to (V+) − 2.5V.
VOUT
OPA727
R
VIN
Common-mode rejection is excellent throughout the input
voltage range from V− to (V+) − 3V. CMRR decreases
somewhat as the common-mode voltage extends to
(V+) − 2.5V, but remains very good and is tested
throughout this range. See the Electrical Characteristics
table for details.
−
V
Figure 2. Input Current Protection for Voltages
Exceeding the Supply Voltage
11
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
RAIL-TO-RAIL OUTPUT
+5V
+5V
A class AB output stage with common-source transistors
is used to achieve rail-to-rail output. This output stage is
capable of driving heavy loads connected to any point
between V+ and V−. For light resistive loads ( > 100kΩ ),
the output voltage can swing to 150mV from the supply rail,
while still maintaining excellent linearity (AOL > 110dB).
With 1kΩ resistive loads, the output is specified to swing
to within 250mV from the supply rails with excellent
linearity (see the Typical Characteristics curve, Output
Voltage Swing vs Output Current).
75
Ω
OPA727
AIN
VIN
2.5V
ADS8342
16−Bit ADC
330pF
Common
5V
−
−5V
Figure 4. OPA727 Driving an ADC
CAPACITIVE LOAD AND STABILITY
TRANSIMPEDANCE AMPLIFIER
Capacitive load drive is dependent upon gain and the
overshoot requirements of the application. Increasing the
gain enhances the ability of the amplifier to drive greater
capacitive loads (see the Typical Characteristics curve,
Small-Signal Overshoot vs Capacitive Load).
Wide bandwidth, low input bias current, and low input
voltage and current noise make the OPA727 an ideal
wideband photodiode transimpedance amplifier. Low-
voltage noise is important because photodiode capaci-
tance causes the effective noise gain of the circuit to
increase at high frequency.
One method of improving capacitive load drive in the
unity-gain configuration is to insert a 10Ω to 20Ω resistor
inside the feedback loop, as shown in Figure 3. This
reduces ringing with large capacitive loads while
maintaining DC accuracy.
The key elements to a transimpedance design, as shown
in Figure 5, are the expected diode capacitance (CD),
which should include the parasitic input common-mode
and differential-mode input capacitance (4pF + 5pF for the
OPA727); the desired transimpedance gain (RF); and the
GBW for the OPA727 (20MHz). With these three variables
set, the feedback capacitor value (CF) can be set to control
the frequency response. CF includes the stray capacitance
of RF, which is 0.2pF for a typical surface-mount resistor.
V+
RS
Ω
20
OPA727
VOUT
VIN
CL
RL
(1)
CF
< 1pF
Figure 3. Series Resistor in Unity-Gain Buffer
Configuration Improves Capacitive Load Drive
RF
Ω
10M
DRIVING FAST 16-BIT ADCs
The OPA727 series is optimized for driving fast 16-bit
ADCs such as the ADS8342. The OPA727 op amps buffer
the converter input capacitance and resulting charge
injection, while providing signal gain. Figure 4 shows the
OPA727 in a single-ended method of interfacing to the
ADS8342 16-bit, 250kSPS, 4-channel ADC with an input
range of 2.5V. The OPA727 has demonstrated excellent
settling time to the 16-bit level within the 600ns acquisition
time of the ADS8342. The RC filter, shown in Figure 4, has
been carefully tuned for best noise and settling
performance. It may need to be adjusted for different op
amp configurations. Please refer to the ADS8342 data
sheet (available for download at www.ti.com) for additional
information on this product.
+5V
λ
VOUT
CD
OPA727
−
5V
NOTE: (1) CF is optional to prevent gain peaking.
It includes the stray capacitance of RF.
Figure 5. Dual-Supply Transimpedance Amplifier
12
ꢂ ꢀꢉꢠ ꢡ ꢠ ꢢ ꢂ ꢀꢉ ꢡꢠꢡ ꢠ
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
To achieve a maximally-flat, 2nd-order Butterworth
frequency response, the feedback pole should be set to:
For additional information, refer to Application Bulletin
SBOA055, Compensate Transimpedance Amplifiers
Intuitively, available for download at www.ti.com.
GBW
4pRFCD
1
+
Ǹ
2pRFCF
(1)
OPTIMIZING THE TRANSIMPEDANCE
CIRCUIT
Bandwidth is calculated by:
f*3dB
GBW
2pRFCD
To achieve the best performance, components should be
selected according to the following guidelines:
+
Hz
Ǹ
(2)
1. For lowest noise, select RF to create the total required
gain. Using a lower value for RF and adding gain after
the transimpedance amplifier generally produces
poorer noise performance. The noise produced by RF
increases with the square-root of RF, whereas the
signal increases linearly. Therefore, signal-to-noise
ratio is improved when all the required gain is placed
in the transimpedance stage.
For even higher transimpedance bandwidth, the
high-speed CMOS OPA380 (90MHz GBW), OPA354
(100MHz GBW), OPA300 (180 MHz GBW), OPA355
(200MHz GBW), or OPA656, OPA657 (400MHz GBW)
may be used.
For single-supply applications, the +IN input can be biased
with a positive dc voltage to allow the output to reach true
zero when the photodiode is not exposed to any light, and
respond without the added delay that results from coming
out of the negative rail. (Refer to Figure 6.) This bias
voltage also appears across the photodiode, providing a
reverse bias for faster operation.
2. Minimize photodiode capacitance and stray
capacitance at the summing junction (inverting input).
This capacitance causes the voltage noise of the op
amp to be amplified (increasing amplification at high
frequency). Using a low-noise voltage source to
reverse-bias a photodiode can significantly reduce its
capacitance. Smaller photodiodes have lower
capacitance. Use optics to concentrate light on a small
photodiode.
(1)
CF
< 1pF
3. Noise increases with increased bandwidth. Limit the
circuit bandwidth to only that required. Use a capacitor
across the RF to limit bandwidth, even if not required
for stability.
RF
Ω
10M
4. Circuit board leakage can degrade the performance of
an otherwise well-designed amplifier. Clean the circuit
board carefully. A circuit board guard trace that
encircles the summing junction and is driven at the
same voltage can help control leakage.
V+
λ
VOUT
OPA727
+VBias
For additional information, refer to the Application Bulletins
Noise Analysis of FET Transimpedance Amplifiers
(SBOA060), and Noise Analysis for High-Speed Op Amps
(SBOA066), available for download at the TI web site.
NOTE: (1) CF is optional to prevent gain peaking.
It includes the stray capacitance of RF.
Figure 6. Single-Supply Transimpedance
Amplifier
13
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SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004
C3
2.2nF
C1
1nF
R3
2.07k
R4
22.3k
1/2
OPA2727
Ω
VO
Ω
R1
1.93k
R2
15.9k
1/2
OPA2727
Ω
Ω
C4
C2
330pF
100pF
DC Gain = 1
Cutoff Frequency = 50kHz
NOTE: FilterPro is a low-pass filter design program available for download at no cost from TI’s web site (www.ti.com). The program can be used
to determine component values for other cutoff frequencies or filter types.
Figure 7. Four-Pole Butterworth Sallen-Key Low-Pass Filter
DFN PACKAGE
LAYOUT GUIDELINES
The OPA727 series uses the 8-lead DFN (also known as
SON), which is a QFN package with lead contacts on only
two sides of the bottom of the package. This leadless,
near-chip-scale package maximizes board space and
enhances thermal and electrical characteristics through
an exposed pad.
The leadframe die pad should be soldered to a thermal pad
on the PCB. A mechanical data sheet showing an example
layout is attached at the end of this data sheet.
Refinements to this layout may be required based on
assembly process requirements. Mechanical drawings
located at the end of this data sheet list the physical
dimensions for the package and pad. The five holes in the
landing pattern are optional, and are intended for use with
thermal vias that connect the leadframe die pad to the
heatsink area on the PCB.
DFN packages are physically small, have a smaller routing
area, improved thermal performance, and improved
electrical parasitics, with a pinout scheme that is
consistent with other commonly-used packages, such as
SO and MSOP. Additionally, the absence of external leads
eliminates bent-lead issues.
Soldering the exposed pad significantly improves
board-level reliability during temperature cycling, key
push, package shear, and similar board-level tests. Even
with applications that have low-power dissipation, the
exposed pad must be soldered to the PCB to provide
structural integrity and long-term reliability.
The DFN package can be easily mounted using standard
printed circuit board (PCB) assembly techniques. See
Application Note, QFN/SON PCB Attachment (SLUA271)
and Application Report, Quad Flatpack No-Lead Logic
Packages (SCBA017), both available for download at
www.ti.com.
The exposed leadframe die pad on the bottom of the
package should be connected to V−.
14
PACKAGE OPTION ADDENDUM
www.ti.com
22-Feb-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
MSOP
MSOP
SON
Drawing
DGK
DGK
DRB
OPA727AIDGKR
OPA727AIDGKT
OPA727AIDRBR
OPA727AIDRBT
OPA728AIDGKR
OPA728AIDGKT
OPA728AIDRBR
OPA728AIDRBT
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
8
8
8
8
8
8
8
8
2500
250
None
None
None
None
None
None
None
None
CU NIPDAU Level-3-240C-168 HR
CU NIPDAU Level-3-240C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-240C-168 HR
CU NIPDAU Level-3-240C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
3000
250
SON
DRB
MSOP
MSOP
SON
DGK
DGK
DRB
2500
250
3000
250
SON
DRB
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional
product content details.
None: Not yet available Lead (Pb-Free).
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens,
including bromine (Br) or antimony (Sb) above 0.1% of total product weight.
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
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