OPT210P-J [BB]

Linear Output Photo IC,;
OPT210P-J
型号: OPT210P-J
厂家: BURR-BROWN CORPORATION    BURR-BROWN CORPORATION
描述:

Linear Output Photo IC,

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中文:  中文翻译
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®
OPT210  
FPO  
MONOLITHIC PHOTODIODE AND AMPLIFIER  
300kHz Bandwidth at RF = 1MΩ  
FEATURES  
DESCRIPTION  
BOOTSTRAP ANODE DRIVE:  
Extends Bandwidth: 900kHz (RF = 100K)  
Reduces Noise  
The OPT210 is a photodetector consisting of a high  
performance silicon photodiode and precision FET-  
input transimpedance amplifier integrated on a single  
monolithic chip. Output is an analog voltage propor-  
tional to light intensity.  
LARGE PHOTODIODE: 0.09" x 0.09"  
HIGH RESPONSIVITY: 0.45A/W (650nm)  
EXCELLENT SPECTRAL RESPONSE  
WIDE SUPPLY RANGE: ±2.25 to ±18V  
The large 0.09" x 0.09" photodiode is operated at low  
bias voltage for low dark current and excellent linear-  
ity. A novel photodiode anode bootstrap circuit re-  
duces the effects of photodiode capacitance to extend  
bandwidth and reduces noise.  
TRANSPARENT DIP, SIP AND SURFACE-  
MOUNT PACKAGES  
The integrated combination of photodiode and  
transimpedance amplifier on a single chip eliminates  
the problems commonly encountered with discrete  
designs such as leakage current errors, noise pick-up  
and gain peaking due to stray capacitance.  
APPLICATIONS  
BARCODE SCANNERS  
MEDICAL INSTRUMENTATION  
LABORATORY INSTRUMENTATION  
POSITION AND PROXIMITY DETECTORS  
PARTICLE DETECTORS  
The OPT210 operates from ±2.25 to ±18V supplies  
and quiescent current is only 2mA. Available in a  
transparent 8-pin DIP, 8-lead surface-mount and 5-pin  
SIP, it is specified for 0° to 70°C operation.  
SPECTRAL RESPONSIVITY  
RF  
V+  
(2)  
Ultraviolet  
Infrared  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.5  
0.4  
0.3  
0.2  
0.1  
0
(3)  
2
1
OPT210  
Using External  
1MResistor  
5
VO  
(5)  
+1  
λ
(1)  
(4)  
V–  
8
3
(SIP Pins)  
DIP Pins  
100 200 300 400 500 600 700 800 900 1000 1100  
Wavelength (nm)  
International Airport Industrial Park  
Mailing Address: PO Box 11400, Tucson, AZ 85734  
FAXLine: (800) 548-6133 (US/Canada Only)  
• Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111  
Internet: http://www.burr-brown.com/  
Cable: BBRCORP  
Telex: 066-6491  
FAX: (520) 889-1510  
Immediate Product Info: (800) 548-6132  
®
PDS-1313B  
SPECIFICATIONS  
At TA = +25°C, VS = ±15V, λ = 650nm, External RF = 1M, RL = 10k, unless otherwise noted.  
OPT210P  
OPT210W  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
RESPONSIVITY  
Photodiode Current  
Unit-to-Unit Variation  
Voltage Output  
Nonlinearity  
Photodiode Area  
λ = 650nm  
0.45  
±5  
0.45  
0.01  
0.008  
5.2  
A/W  
%
λ = 650nm, External RF = 1MΩ  
V/µW  
% of FS  
in2  
(0.09 x 0.09in)  
(2.29 x 2.29mm)  
mm2  
DARK ERROR, RTO  
Offset Voltage  
±2  
±10  
mV  
vs Temperature  
vs Power Supply  
Voltage Noise  
±35  
100  
160  
µV/°C  
µV/V  
µVrms  
V
S = ±2.25V to ±18V  
1000  
BW = 0.01Hz to 100kHz  
FREQUENCY RESPONSE  
Bandwidth  
Rise Time  
Settling Time, 1%  
0.1%  
External RF = 1MΩ  
10% to 90%  
FS to Dark step  
300  
1.2  
3
8
20  
7
kHz  
µs  
µs  
µs  
µs  
µs  
0.01%  
Overload Recovery  
100% Overdrive  
OUTPUT  
Voltage Output, Positive  
Positive  
R
R
L = 10kΩ  
L = 5kΩ  
RL = 10kΩ  
(V+)–1.25  
–0.4  
(V+)–0.75  
(V+)–1  
–0.5  
V
Negative(1)  
V
Capacitive Load, Stable Operation  
Short-Circuit Current(2)  
500  
+50  
pF  
mA  
POWER SUPPLY  
Operating Range  
Quiescent Current  
±2.25  
±18  
±4  
V
mA  
+2.0/–1.7  
TEMPERATURE RANGE  
Specification  
Operating  
Storage  
θJA  
0
0
–25  
70  
70  
85  
°C  
°C  
°C  
100  
°C/W  
NOTES: (1) Output typically swings to 0.5V below the voltage applied to the non-inverting input terminal, which is normally connected to ground. (2) Positive  
current (sourcing) is limited. Negative current (sinking) is not limited.  
PHOTODIODE SPECIFICATIONS  
PHOTODIODE  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Photodiode Area  
(0.09 x 0.09in)  
(2.29 x 2.29mm)  
λ = 650nm  
0.008  
5.2  
0.45  
in2  
mm2  
A/W  
Current Responsivity  
865  
70  
µA/W/cm2  
pA  
Dark Current  
VD = –1.2V  
vs Temperature  
Capacitance  
Effective Capacitance(1)  
Doubles every 10°C  
VD = –1.2V  
VD = –1.2V  
550  
10  
pF  
pF  
NOTES: (1) Effect of photodiode capacitance is reduced by internal buffer bootstrap drive. See text  
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes  
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant  
any BURR-BROWN product for use in life support devices and/or systems.  
®
2
OPT210  
OP AMP SPECIFICATIONS  
Op amp specifications provided for comparative information only.  
OP AMP  
TYP  
PARAMETER  
CONDITIONS  
MIN  
MAX  
UNITS  
INPUT  
Offset Voltage  
vs Temperature  
vs Power Supply  
Input Bias Current  
Inverting Input  
vs Temperature  
Non-inverting Input  
±2  
±35  
100  
mV  
µV/°C  
µV/V  
15  
Doubles every 10°C  
300  
pA  
µA  
NOISE  
Voltage Noise  
f = 10Hz  
f = 100Hz  
f = 1kHz  
20  
9
6
nV/Hz  
nV/Hz  
nV/Hz  
fA/Hz  
Current Noise Density, Inverting Input  
BW = 0.01Hz to 100kHz  
0.8  
INPUT VOLTAGE RANGE  
Common-Mode Input Range(1)  
Common-Mode Rejection  
VS±2.25  
65  
V
dB  
INPUT IMPEDANCE  
Inverting Input Impedance  
Non-Inverting Input Impedance  
3x1010||3  
250  
|| pF  
kΩ  
OPEN-LOOP GAIN  
Open-Loop Voltage Gain  
VO = 0V to +13.75V  
70  
dB  
FREQUENCY RESPONSE  
Bandwidth, Small Signal  
Rise Time, Large Signal  
Settling Time, 1%  
0.1%  
35  
25  
240  
390  
800  
7
MHz  
ns  
ns  
ns  
ns  
10% to 90%  
10V step  
0.01%  
Overload Recovery  
100% Overdrive  
µs  
OUTPUT  
Voltage Output, Positive  
Positive  
R
R
L = 10kΩ  
L = 5kΩ  
RL = 10kΩ  
(V+)–1.25  
–0.4  
(V+)–0.75  
(V+)–1  
–0.5  
V
Negative(1)  
V
Capacitive Load, Stable Operation  
Short-Circuit Current(2)  
500  
+50  
pF  
mA  
POWER SUPPLY  
Operating Voltage  
Quiescent Current  
±2.25  
±18  
±4  
V
mA  
+1.7/–1.4  
NOTES: (1) Output typically swings to 0.5V below the voltage applied to the non-inverting input terminal, which is normally connected to ground. (2) Positive  
current (sourcing) is limited. Negative current (sinking) is not limited.  
BUFFER SPECIFICATIONS  
Buffer specifications provided for comparative information only.  
BUFFER  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
INPUT  
Offset Voltage(1)  
Input Bias Current  
vs Temperature  
Input Impedance  
–1.2  
15  
V
pA  
Doubles every 10°C  
1011||3  
|| pF  
FREQUENCY RESPONSE  
Bandwidth, Small Signal  
500  
MHz  
OUTPUT  
Current  
±200  
µA  
Voltage Gain  
0.99  
V/V  
POWER SUPPLY  
Operating Range  
Quiescent Current  
±2.25  
±18  
V
mA  
±0.3  
NOTE: (1) Intentional voltage offset to reverse bias photodiode.  
®
3
OPT210  
PIN CONFIGURATIONS  
Top View  
ELECTROSTATIC  
DIP  
DISCHARGE SENSITIVITY  
V+  
–In  
V–  
1
2
3
4
8
7
6
5
Common  
NC  
This integrated circuit can be damaged by ESD. Burr-Brown  
recommends that all integrated circuits be handled with ap-  
propriate precautions. Failure to observe proper handling and  
installation procedures can cause damage.  
(1)  
NC  
NC  
Output  
ESD damage can range from subtle performance degradation  
to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric  
changes could cause the device not to meet its published  
specifications.  
NOTE: (1) Photodiode location.  
Top View  
SIP  
Common  
1
2
3
4
5
V+  
–In  
(1)  
V–  
MOISTURE SENSITIVITY  
AND SOLDERING  
Output  
NOTE: (1) Photodiode location.  
Clear plastic does not contain the structural-enhancing fillers  
used in black plastic molding compound. As a result, clear  
plastic is more sensitive to environmental stress than black  
plastic. This can cause difficulties if devices have been stored  
in high humidity prior to soldering. The rapid heating during  
soldering can stress wire bonds and cause failures. Prior to  
soldering,itisrecommendedthatplasticdevicesbebaked-out  
at 85°C for 24 hours.  
ABSOLUTE MAXIMUM RATINGS  
Supply Voltage ................................................................................... ±18V  
Input Voltage Range (Common Pin) .................................................... ±VS  
Output Short-Circuit (to ground) ............................................... Continuous  
Operating Temperature: P, W ........................................... –25°C to +85°C  
Storage Temperature: P, W ........................................... –25°C to +85°C  
Junction Temperature: P, W .......................................................... +85°C  
Lead Temperature (soldering, 10s) ................................................ +300°C  
(Vapor-Phase Soldering Not Recommended on Plastic Packages)  
The fire-retardant fillers used in black plastic are not compat-  
ible with clear molding compound. The OPT210 plastic  
packages cannot meet flammability test, UL-94.  
PACKAGE INFORMATION  
PACKAGE DRAWING  
PRODUCT  
PACKAGE  
NUMBER(1)  
OPT210P  
OPT210P-J  
OPT210W  
8-Pin Plastic DIP  
8-Lead Surface Mount(2)  
5-Pin Plastic SIP  
006-5  
006-6  
321-1  
NOTE: (1) For detailed drawing and dimension table, please see end of data  
sheet, or Appendix C of Burr-Brown IC Data Book. (2) 8-pin DIP with leads  
formed for surface mounting.  
®
4
OPT210  
TYPICAL PERFORMANCE CURVES  
At TA = +25°C, VS = ±15V, λ = 650nm, unless otherwise noted.  
NORMALIZED SPECTRAL RESPONSIVITY  
1.0  
VOLTAGE RESPONSIVITY vs RADIANT POWER  
10  
1
(0.48A/W)  
0.8  
650nm  
(0.45A/W)  
0.6  
0.1  
0.01  
0.4  
0.2  
λ = 650nm  
0.001  
0
100 200 300 400 500 600 700 800 900 1000 1100  
Wavelength (nm)  
0.01  
0.1  
1
10  
100  
1k  
Radiant Power (µW)  
VOLTAGE OUTPUT RESPONSIVITY vs FREQUENCY  
VOLTAGE RESPONSIVITY vs IRRADIANCE  
100  
10  
10  
1
RF = 100MΩ  
RF = 10MΩ  
RF = 1MΩ, CF = 0.5pF  
RF = 100kΩ, CF = 1.8pF  
0.1  
1
0.01  
0.001  
0.1  
0.01  
λ = 650nm  
1k  
10k  
100k  
1M  
10M  
0.001  
0.01  
0.1  
1
10  
100  
Irradiance (W/m2)  
Frequency (Hz)  
POWER SUPPLY REJECTION  
vs FREQUENCY  
RESPONSE vs INCIDENT ANGLE  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
θX  
SIP Package  
0.8  
0.6  
0.4  
0.2  
0
θX  
θY  
θY  
V–  
Plastic  
DIP Package  
θX  
θY  
V+  
–10  
1
10  
100  
1k  
10k  
100k  
1M  
10M  
0
±20  
±40  
±60  
±80  
Frequency (Hz)  
Incident Angle (°)  
®
5
OPT210  
TYPICAL PERFORMANCE CURVES (CONT)  
At TA = +25°C, VS = ±15V, λ = 650nm, unless otherwise noted.  
OUTPUT NOISE VOLTAGE  
vs MEASUREMENT BANDWIDTH  
QUIESCENT CURRENT vs TEMPERATURE  
10–2  
3
Dashed lines indicate  
noise measured beyond  
the signal bandwidth.  
10–3  
10–4  
10–5  
10–6  
10–7  
IQ+  
IQ–  
RF = 10MΩ  
2
1
0
RF = 100MΩ  
VS = ±15V  
IQ+  
IQ–  
RF = 100kΩ  
RF = 10kΩ  
VS = ±2.25V  
RF = 1MΩ  
10  
100  
1k  
10k  
100k  
1M  
10M  
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
Frequency (Hz)  
Temperature (°C)  
SMALL-SIGNAL RESPONSE, RF = 1MΩ  
Measurement BW = 1MHz  
LARGE-SIGNAL RESPONSE, RF = 1MΩ  
5µs/div  
5µs/div  
NOISE EFFECTIVE POWER  
vs MEASUREMENT BANDWIDTH  
RF = 10kΩ  
10–7  
Dashed lines indicate  
RF = 100kΩ  
noise measured beyond  
the signal bandwidth.  
λ = 650nm  
10–8  
10–9  
RF = 1MΩ  
RF = 10MΩ  
R
F = 100MΩ  
10–10  
10–11  
10–12  
10–13  
10–14  
10  
100  
1k  
10k  
100k  
1M  
10M  
Frequency (Hz)  
®
6
OPT210  
The typical performance curve “Output Voltage vs Radiant  
Power” shows the response throughout a wide range of  
radiant power and feedback resistor values. The response  
curve “Output Voltage vs Irradiance” is based on the  
photodiode area of 5.23x10–6m2.  
APPLICATIONS INFORMATION  
Basic operation of the OPT210 is shown in Figure 1. Power  
supply bypass capacitors should be connected near the  
device pins as shown. Noise performance of the OPT210 can  
be degraded by the high frequency noise on the power  
supplies. Resistors in series with the power supply pins as  
shown can be used (optional) to help filter power supply  
noise  
BOOTSTRAP BUFFER  
The photodiode’s anode is driven by an internal high speed  
voltage buffer shown in Figure 1. This variation on the  
classical transimpedance amplifier circuit reduces the effects  
of photodiode capacitance. The effective photodiode  
capacitance is reduced from approximately 550pF to 10pF  
with this bootstrap drive technique. This improves bandwidth  
and reduces noise.  
An external feedback resistor, RF, is connected from –In to  
the VO terminal as shown in Figure 1. Feedback resistors of  
1Mor less require parallel capacitor, CF. See the table of  
values in Figure 1.  
(paracitic capacitance)  
The output voltage of the buffer is offset approximately  
1.2V below the input. This reverse biases the photodiode for  
reduced capacitance.  
+15V  
For RF > 2M,  
use series-connected  
resistors. See text.  
CF  
RF  
OP AMP  
100Ω  
(2)  
1µF  
+
A special op amp design is used to achieve wide bandwidth.  
The op amp output voltage cannot swing lower than 0.5V  
below the non-inverting input voltage. Since photodiode  
current always produces a positive output voltage, this does  
not limit the required output swing.  
(3)  
2
1
OPT210  
5
VO  
(5)  
+1  
(0V to 14V)  
λ
The inverting input is designed for very low input bias  
current—approximately 15pA. The non-inverting input has  
much larger bias current—approximately 300µA flows out  
of this terminal.  
(1)  
3
(4)  
8
1µF  
100Ω  
+
Optional series resistors filter  
power supply noise. See text.  
+15V  
RF  
–15V  
0.1µF  
RF  
CF (min)  
BANDWIDTH  
1MΩ  
(2)  
(3)  
2
1
10MΩ  
1MΩ  
100kΩ  
10kΩ  
1kΩ  
(1)  
70kHz  
300kHz  
900kHz  
1.6MHz  
1.6MHz  
OPT210  
0.5pF  
1.8pF  
10pF  
20pF  
5
VO  
(5)  
+1  
Output voltage  
offset by VA  
λ
NOTE: (1) Two series-connected resis-  
tors of RF /2 for low capacitance. See text.  
+15V  
(1)  
(4)  
8
3
300µA  
FIGURE 1. Basic Operation.  
0.1µF  
100µA  
1/2 REF200  
Bandwidth varies with feedback resistor value. To achieve  
widest bandwidth with resistors greater than 1M, use care  
to minimize parasitic parallel capacitance. For widest  
bandwidth with resistors greater than 2M, connect two  
resistors (RF/2) in series. Airwiring this interconnection  
provides lowest capacitance. Although the OPT210 is usable  
with feedback resistors of 100Mand higher, with  
RF 10Mthe model OPT211 will provide lower dc errors  
and reduced noise.  
–15V  
VA  
200Ω  
200Ω  
OPA131  
±20mV  
10kΩ  
100µA  
1/2 REF200  
–15V  
The OPT210’s output voltage is the product of the photodiode  
current times the external feedback resistor, RF. Photodiode  
current, ID, is proportional to the radiant power or flux (in  
watts) falling on the photodiode. At a wavelength of 650nm  
(visible red) the photodiode Responsivity, RI, is approximately  
0.45A/W. Responsivity at other wavelengths is shown in the  
typical performance curve “Responsivity vs Wavelength.”  
FIGURE 2. Adjustable Output Offset.  
An offset voltage can be connected to the non-inverting  
input as shown in Figure 2. A voltage applied to the non-  
inverting input is summed at the output. Because the non-  
inverting input bias current is high (approximately 300µA),  
it should be driven by a low impedance such as the buffer-  
connected op amp shown.  
®
7
OPT210  
The OPT210 can be connected to operate from a single  
power supply as shown in Figure 3. The non-inverting input  
bias current flows through a zener diode to provide a bias  
voltage. The output voltage is referenced to this bias point.  
cosine of the incident angle). At a greater incident angle,  
light is diffused by the side of the package. These effects are  
shown in the typical performance curve, “Response vs  
Incident Angle.”  
LINEARITY PERFORMANCE  
+15V  
RF  
0.1µF  
Photodiode current is very linear with radiant power  
throughout its range. Nonlinearity remains below  
approximately 0.01% up to 200µA. The anode buffer drive,  
however, is limited to approximately 200µA. This produces  
an abrupt limit to photodiode output current when radiant  
power reaches approximately 450µW.  
(2)  
(3)  
2
1
VO measured  
relative to 5.6V  
zener voltage.  
OPT210  
5
VO  
(5)  
+1  
λ
Best linearity is achieved with the photodiode uniformly  
illuminated. A light source focused to a very small beam,  
illuminating only a small percentage of the photodiode area,  
may produce a higher nonlinearity.  
(5.6V)  
(1)  
(4)  
8
3
300µA  
+
1µF  
ZD1  
ZD1: IN4626 5.6V  
specified at IZ = 250µA  
NOISE PERFORMANCE  
Noise performance of the OPT210 is determined by the op  
amp characteristics in conjunction with the feedback  
components, photodiode capacitance, and buffer performance.  
The typical performance curve “Output Noise Voltage vs  
Measurement Bandwidth” shows how the noise varies with  
RF and measured bandwidth (0.1Hz to the indicated  
frequency). The signal bandwidth of the OPT210 is indicated  
on the curves. Noise can be reduced by filtering the output  
with a cutoff frequency equal to the signal bandwidth.  
FIGURE 3. Single Power Supply Operation.  
DARK ERRORS  
The dark errors in the specification table include all sources  
with RF = 1M. The dominant error source is the input  
offset voltage of the op amp. Photodiode dark current is  
approximately 70pA and the combined input bias current of  
the op amp and buffer is approximately 30pA. Photodiode  
dark current and input bias current total approximately  
100pA at 25°C and double for each 10°C above 25°C. At  
70°C, the total error current is approximately 2nA. With  
RF = 1M, this would produce a 2mV offset voltage in  
addition to the initial amplifier offset voltage (10mV max)  
at 25°C. The dark output voltage can be trimmed to zero  
with the optional circuit shown in Figure 2.  
Output noise increases in proportion to the square-root of the  
feedback resistance, while responsivity increases linearly  
with feedback resistance. So best signal-to-noise ratio is  
achieved with large feedback resistance. This comes with  
the trade-off of decreased bandwidth.  
The noise performance of a photodetector is sometimes  
characterized by Noise Effective Power (NEP). This is the  
radiant power which would produce an output signal equal  
to the noise level. NEP has the units of radiant power  
(watts), or Watts/Hz to convey spectral information about  
the noise. The typical performance curve “Output Noise  
Voltage vs Measurement Bandwidth” is also scaled for NEP  
on the right-hand side.  
LIGHT SOURCE POSITIONING  
The OPT210 is tested with a light source that uniformly  
illuminates the full integrated circuit area, including the op  
amp. Although all IC amplifiers are light sensitive to some  
degree, the OPT210 op amp circuitry is designed to minimize  
this effect. Sensitive junctions are shielded with metal where  
possible. Furthermore, the photodiode area is very large  
compared to the op amp circuitry making these effects  
negligible.  
If your light source is focused to a small area, be sure that  
it is properly aimed to fall on the photodiode. If a narrowly  
focused light source were to miss the photodiode and fall on  
the op amp circuitry, the OPT210 would not perform properly.  
The large photodiode area is clearly visible as a very dark  
area slightly offset from the center of the IC.  
The incident angle of the light source also affects the  
apparent sensitivity in uniform irradiance. For small incident  
angles, the loss in sensitivity is due to the smaller effective  
light gathering area of the photodiode (proportional to the  
®
8
OPT210  

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BB

OPT211P

Linear IC Output Optocoupler, 1-Channel, HERMETIC SEALED, CERDIP-8
BB

OPT3001

Ambient Light Sensor (ALS)
TI

OPT3001-Q1

具有高精密人眼响应功能的汽车数字环境光传感器 (ALS)
TI

OPT3001DNPR

Ambient Light Sensor (ALS)
TI

OPT3001DNPRQ1

具有高精密人眼响应功能的汽车数字环境光传感器 (ALS) | DNP | 6 | -40 to 105
TI

OPT3001DNPT

Ambient Light Sensor (ALS)
TI

OPT3001IDNPRQ1

具有高精密人眼响应功能的汽车数字环境光传感器 (ALS) | DNP | 6 | -40 to 85
TI

OPT3001IDNPTQ1

具有高精密人眼响应功能的汽车数字环境光传感器 (ALS) | DNP | 6 | -40 to 85
TI

OPT3001_15

Ambient Light Sensor (ALS)
TI

OPT3002

光数字传感器
TI